© 2013 IXYS CORPORATION, All Rights Reserved
XPTTM 600V IGBTs
GenX3TM
IXXK200N60C3
IXXX200N60C3
VCES = 600V
IC110 = 200A
VCE(sat) ≤ ≤
≤ ≤
≤
2.1V
tfi(typ) = 80ns
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 175°C 600 V
VCGR TJ = 25°C to 175°C, RGE = 1MΩ 600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25°C (Chip Capability) 340 A
ILRMS Terminal Current Limit 160 A
IC110 TC = 110°C 200 A
ICM TC = 25°C, 1ms 900 A
IATC = 25°C 100 A
EAS TC = 25°C 1 J
SSOA VGE = 15V, TVJ = 150°C, RG = 1Ω ICM = 400 A
(RBSOA) Clamped Inductive Load @VCE ≤ VCES
tsc VGE = 15V, VCE = 360V, TJ = 150°C 10 μs
(SCSOA) RG = 10Ω, Non Repetitive
PCTC = 25°C 1630 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
DS100373A(02/13)
Extreme Light Punch Through
IGBT for 20-60kHz Switching
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 600 V
VGE(th) IC= 250μA, VCE = VGE 3.5 6.0 V
ICES VCE = VCES, VGE = 0V 50 μA
TJ = 150°C 3 mA
IGES VCE = 0V, VGE = ±20V ±200 nA
VCE(sat) IC= 100A, VGE = 15V, Note 1 1.60 2.10 V
TJ = 150°C 1.93 V
Features
zInternational Standard Packages
zOptimized for 20-60kHz Switching
zSquare RBSOA
zAvalanche Rated
zShort Circuit Capability
zHigh Current Handling Capability
Advantages
zHigh Power Density
zLow Gate Drive Requirement
Applications
zPower Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zWelding Machines
zLamp Ballasts
G = Gate E = Emitter
C = Collector Tab = Collector
TO-264 (IXXK)
E
G
C
PLUS247 (IXXX)
G
Tab
Tab
E
C
G
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK200N60C3
IXXX200N60C3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, Note 1 20 35 S
Cies 9900 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 570 pF
Cres 185 pF
Qg(on) 315 nC
Qge IC = 200A, VGE = 15V, VCE = 0.5 • VCES 134 nC
Qgc 98 nC
td(on) 47 ns
tri 100 ns
Eon 3.0 mJ
td(off) 125 ns
tfi 80 ns
Eoff 1.7 2.6 mJ
td(on) 47 ns
tri 96 ns
Eon 4.0 mJ
td(off) 150 ns
tfi 90 ns
Eoff 2.1 mJ
RthJC 0.092 °C/W
RthCS 0.15 °C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Inductive load, TJ = 150°C
IC = 100A, VGE = 15V
VCE = 360V, RG = 1Ω
Note 2
Inductive load, TJ = 25°C
IC = 100A, VGE = 15V
VCE = 360V, RG = 1Ω
Note 2
TO-264 Outline
Terminals: 1 = Gate
2,4 = Collector
3 = Emitter
Terminals: 1 - Gate
2 - Collector
3 - Emitter
PLUS247TM Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
© 2013 IXYS CORPORATION, All Rights Reserved
IXXK200N60C3
IXXX200N60C3
Fi g . 1. Ou tpu t C har acteri sti cs @ T
J
= 25ºC
0
50
100
150
200
0 0.4 0.8 1.2 1.6 2 2.4
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
13
V
11
V
10
V
8
V
7
V
9V
12
V
Fi g. 2. Exte n d ed Ou t p u t Ch ar acter isti cs @ T
J
= 25ºC
0
50
100
150
200
250
300
350
0 2 4 6 8 10 12 14 16 18
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
10
V
11
V
12
V
8
V
7
V
9
V
13
V
Fi g . 3. Ou tpu t C har acteri sti cs @ T
J
= 150º C
0
50
100
150
200
0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2
V
CE
- Volts
I
C
- Amperes
V
GE
= 15
V
13
V
12
V
10
V
8
V
9
V
7
V
6
V
11
V
Fig. 4. Dependence of V
CE(sat)
on
Junction T emperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15
V
I
C
= 100
A
I
C
= 150
A
I
C
= 200
A
Fi g . 5 . C o l l ector -to - Emitter Vol tag e vs.
Gate-to -Emitter V o l tag e
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
9 101112131415
V
GE
- Volts
V
CE
- Volts
I
C
= 200
A
T
J
= 25ºC
100
150
A
Fig. 6. Input Adm ittance
0
20
40
60
80
100
120
140
160
180
200
4567891011
V
GE
- Volts
I
C
- Amperes
T
J
= 150ºC
25ºC - 40ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK200N60C3
IXXX200N60C3
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
-
Siemens
TJ
= - 40ºC, 25ºC, 150ºC
Fi g . 10. Reverse-B i as Safe Operati n g Area
0
100
200
300
400
100 200 300 400 500 600
V
CE
- Volts
I
C
- Amperes
TJ
= 150ºC
RG = 1
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300
Q
G
- NanoCoulombs
V
GE
- Volts
VCE
= 300V
I C = 200A
I G = 10mA
Fig. 9. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MH
z
Cies
Coes
Cres
Fi g . 12. Maximum Transien t Ther mal I mp ed ance
0.0001
0.001
0.01
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fi g . 11. F o r war d -B i as Safe Oper ati n g Area
0.1
1
10
100
1000
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
TJ = 175ºC
TC = 25ºC
Single Pulse
1ms
10ms
VCE(sat) Limit
DC
100µs
25µs
© 2013 IXYS CORPORATION, All Rights Reserved
IXXK200N60C3
IXXX200N60C3
Fig. 13. Inductive Switching Energy Loss vs.
Gate R esi sta nce
0.5
1.0
1.5
2.0
2.5
3.0
3.5
12345678910
R
G
- Ohms
Eoff - MilliJoules
1
2
3
4
5
6
7
Eon - MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 360V
I
C
= 50
A
I
C
= 100
A
Fig. 16. Inductive Turn-off Switching Times vs.
Gate Resistance
10
30
50
70
90
110
130
150
12345678910
R
G
- Ohms
t f i - Nanoseconds
100
150
200
250
300
350
400
450
t d(off) - Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 360V
I
C
= 100
A
I
C
= 50
A
Fig. 14. Inductive Switching Energy Loss vs.
Collector Current
0.0
0.5
1.0
1.5
2.0
2.5
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
Eoff - MilliJoules
0
1
2
3
4
5
Eon - MilliJoules
E
off
E
on
- - - -
R
G
= 1
Ω,
V
GE
= 15V
V
CE
= 360V T
J
= 150ºC
T
J
= 25ºC
Fig. 15. Inductive Switching Energy Loss vs.
Jun ct ion Temper atu re
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25 50 75 100 125 150
T
J
- Degrees Centigrade
Eoff - MilliJoules
0
1
2
3
4
5
6
Eon - MilliJoules
Eoff Eon - - - -
R
G
= 1
Ω,
V
GE
= 15V
V
CE
= 360V
I
C
= 50
A
I
C
= 100
A
Fi g. 17. I n d uctive Tur n -off Sw i tch i n g Times vs.
Collector Current
0
20
40
60
80
100
120
140
160
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t f i - Nanoseconds
110
120
130
140
150
160
170
180
190
t d(off) - Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 360V
T
J
= 150ºC
T
J
= 25ºC
Fig. 18. Inductive Turn-off Switching Times vs.
Jun ct i o n Temper atu r e
0
20
40
60
80
100
120
140
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i - Nanoseconds
110
120
130
140
150
160
170
180
t d(off) - Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 360V
I
C
= 100
A
I
C
= 50
A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXK200N60C3
IXXX200N60C3
IXYS REF: IXX_200N60C3(91)8-18-11
Fig. 20. Inductive Tu rn-on Switching T imes vs.
Collector Current
20
40
60
80
100
120
50 55 60 65 70 75 80 85 90 95 100
I
C
- Amperes
t
r i - Nanoseconds
40
42
44
46
48
50
t d(on) - Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1Ω, V
GE
= 15V
V
CE
= 360V
T
J
= 25ºC
T
J
= 150ºC
Fig. 21. Inductive T urn-on Switching T imes vs.
Junction T emperature
0
20
40
60
80
100
120
140
160
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i - Nanoseconds
38
40
42
44
46
48
50
52
54
t d(on) - Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 1Ω, V
GE
= 15V
V
CE
= 360V
I
C
= 100
A
I
C
= 50
A
Fig. 19. Inductive Turn-on Switching Ti mes vs.
Gate Resistance
20
40
60
80
100
120
140
160
180
12345678910
R
G
- Ohms
t r i - Nanoseconds
35
45
55
65
75
85
95
105
115
t d(on) - Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 360V
I
C
= 50
A
I
C
= 100
A