BPV11F VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-13/4 plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters ( p 900 nm). The viewing angle of 15 makes it insensible to ambient straylight. A base terminal is available to enable biasing and sensitivity control. 12784 Features Applications * * * * * * Detector for industrial electronic circuitry, measurement and control Very high radiant sensitivity Standard T-13/4 ( 5 mm) package IR filter for GaAs emitters (950 nm) Angle of half sensitivity = 15 Base terminal available Lead-free device Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Symbol Value Unit Collector Base Voltage Parameter Test condition VCBO 80 V Collector Emitter Voltage VCEO 70 V Emitter Base Voltage VEBO 5 V IC 50 mA Collector peak current tp/T = 0.5, tp 10 ms ICM 100 mA Total Power Dissipation Tamb 47 C Ptot 150 mW C Collector current Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Document Number 81505 Rev. 1.4, 26-Mar-04 t 5 s, 2 mm from body Tj 100 Tstg - 55 to + 100 C Tsd 260 C RthJA 350 K/W www.vishay.com 1 BPV11F VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Collector Emitter Breakdown Voltage IC = 1 mA Symbol Min V(BR)CEO 70 Typ. Max Unit V Collector-emitter dark current VCE = 10 V, E = 0 ICEO 1 DC Current Gain VCE = 5 V, IC = 5 mA, E = 0 hFE 450 Collector-emitter capacitance VCE = 0 V, f = 1 MHz, E = 0 CCEO 15 pF Collector - base capacitance VCB = 0 V, f = 1 MHz, E = 0 CCBO 19 pF 50 nA Optical Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Collector Light Current 2 Ee = 1 mW/cm , = 950 nm, VCE = 5 V Symbol Min Typ. Ica 3 9 Max Unit mA deg Angle of Half Sensitivity 15 Wavelength of Peak Sensitivity p 930 nm 0.5 900 to 980 nm VCEsat 130 6 Range of Spectral Bandwidth 300 mV Collector Emitter Saturation Voltage Ee = 1 mW/cm2, = 950 nm, IC = 1 mA Turn-On Time VS = 5 V, IC = 5 mA, RL = 100 ton Turn-Off Time VS = 5 V, IC = 5 mA, RL = 100 toff 5 s Cut-Off Frequency VS = 5 V, IC = 5 mA, RL = 100 fc 110 kHz s 200 I CEO - Collector Dark Current ( nA ) Ptot -Total Power Dissipation ( mW ) Typical Characteristics (Tamb = 25 C unless otherwise specified) 160 120 80 40 0 94 8300 RthJA 0 20 40 60 80 100 Tamb - Ambient Temperature(C ) Fig. 1 Total Power Dissipation vs. Ambient Temperature www.vishay.com 2 104 103 V CE=10V 102 101 100 94 8249 20 40 60 100 80 Tamb - Ambient Temperature ( C ) Fig. 2 Collector Dark Current vs. Ambient Temperature Document Number 81505 Rev. 1.4, 26-Mar-04 BPV11F VISHAY Vishay Semiconductors 800 1.8 1.4 B - Amplification V CE = 5 V E e = 1 mW/cm 2 i = 950 nm 1.6 1.2 1.0 200 0 20 40 60 80 10 1 V CE =5V =950nm 0.01 0.01 0.1 Ee - Irradiance ( 94 8244 mW/ cm 2 ) =950nm Ee=1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2 0.1 0.1 94 8245 1 10 100 V CE - Collector Emitter Voltage ( V ) Fig. 5 Collector Light Current vs. Collector Emitter Voltage Document Number 81505 Rev. 1.4, 26-Mar-04 12 8 4 0 0.1 1 10 100 V CE - Collector Emitter Voltage ( V ) Fig. 7 Collector Base Capacitance vs. Collector Base Voltage 100 1 100 f = 1 MHz 16 94 8240 Fig. 4 Collector Light Current vs. Irradiance 10 10 20 10 1 1 Fig. 6 Amplification vs. Collector Current C CEO - Collector Emitter Capacitance ( pF ) 100 0.1 I C - Collector Current ( mA ) 94 8250 Fig. 3 Relative Collector Current vs. Ambient Temperature 0.1 0 0.01 100 Tamb - Ambient Temperature ( C ) 94 8239 Ica - Collector Light Current ( mA) 400 0.8 0.6 Ica - Collector Light Current ( mA) V CE=5V 600 C CEO - Collector Emitter Capacitance ( pF ) I ca rel - Relative Collector Current 2.0 94 8247 20 f=1MHz 16 12 8 4 0 0.1 1 10 100 V CE - Collector Emitter Voltage ( V ) Fig. 8 Collector Emitter Capacitance vs. Collector Emitter Voltage www.vishay.com 3 BPV11F VISHAY Vishay Semiconductors ton / toff -Turn on / Turn off Time ( s ) 12 V CE=5V RL=100 =950nm 10 8 6 ton 4 toff 2 0 0 4 8 12 16 I C - Collector Current ( mA ) 94 8253 S ( )rel - Relative Spectral Sensitivity Fig. 9 Turn On/Turn Off Time vs. Collector Current 1.0 0.8 0.6 0.4 0.2 0 800 900 1100 1000 - Wavelength ( nm ) 94 8258 Fig. 10 Relative Spectral Sensitivity vs. Wavelength Srel - Relative Sensitivity 0 10 20 30 40 1.0 0.9 50 0.8 60 70 0.7 80 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8248 Fig. 11 Relative Radiant Sensitivity vs. Angular Displacement www.vishay.com 4 Document Number 81505 Rev. 1.4, 26-Mar-04 BPV11F VISHAY Vishay Semiconductors Package Dimensions in mm 9612200 Document Number 81505 Rev. 1.4, 26-Mar-04 www.vishay.com 5 BPV11F VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 81505 Rev. 1.4, 26-Mar-04