2004-2013 Microchip Technology Inc. DS21889E-page 1
MCP111/112
Features
Ultra-low supply current: 1.75 µA (max.)
Precision monitoring options of:
- 1.90V, 2.32V, 2.63V, 2.90V, 2.93V, 3.08V,
4.38V and 4.63V
Resets microcontroller in a power-loss event
•Active-low V
OUT pin:
-MCP111 active-low, open-drain
-MCP112 active-low, push-pull
Available in SOT23-3, TO-92, SC-70 and
SOT-89-3 packages
Temperature Range:
- Extended: -40°C to +125°C
(except MCP1XX-195)
- Industrial: -40°C to +85°C (MCP1XX-195 only)
Pb-free devices
Applications
Critical Microcontroller and Mi croprocessor
Power-Moni tori ng Appl ic ati ons
Computers
Intelligent Instruments
Port ab le Batte ry-Po wered Equipm en t
Description
The MCP111/112 are voltage-detecting devices
designed to keep a microcontroller in reset until the
system voltage has stabilized at the appropriate level
for reliable system operation. These devices also
operate as protection from brown-out conditions when
the system supply voltage drops below the specified
threshold voltage level. Ei gh t different trip v ol t ag es are
available.
Package Types
Block Diagram
TABLE 1: DEVICE FEATURES
3-Pin SOT23-3/SC-70
VDD
VOUT
MCP111/112
1
2
3
VSS
VSS
VOUT
3-Pin TO-92
VDD
1 32
VDD VSS
VOUT
3-Pin SOT-89
VDD
MCP111/112
VDD
Comparator
+
Output
Driver VOUT
Band Gap
Reference
VSS
Device Output Reset Delay
(typ) Package Pin Out
(Pin # 1, 2, 3) Comment
Type Pull-up Resistor
MCP111 Open-drain External No VOUT, VSS, VDD
MCP112 Push-pull No No VOUT, VSS, VDD
MCP102 Push-pull No 120 ms RST, VDD, VSS See MCP102/103/121/131 Data Sheet
(DS21906)
MCP103 Push-pull No 120 ms VSS, RST, VDD See MCP102/103/121/131 Data Sheet
(DS21906)
MCP121 Open-drain External 120 ms RST, VDD, VSS See MCP102/103/121/131 Data Sheet
(DS21906)
MCP131 Open-Drain Internal (~95 k)120 ms RST, VDD, VSS See MCP102/103/121/131 Data Sheet
(DS21906)
Micropower Voltage Detector
MCP111/112
DS21889E-page 2 2004-2013 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0V
Input current (VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA
Output current (RST) . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA
Rated Rise Time of VDD . . . . . . . . . . . . . . . . . . . . . . 100V/µs
All inputs and outputs (except RST) w.r.t. VSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0 .6V to (VDD + 1.0V)
RST output w.r.t. VSS . . . . . . . . . . . . . . . . . . . -0 . 6 V to 1 3 .5 V
Storage temperature . . . . . . . . . . . . . . . . . . .65°C to + 150°C
Ambient temp. with power applied . . . . . . . -40°C to + 125°C
Maximum Junction temp. with power applied . . . . . . . .150°C
ESD protection on all pins2kV
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to m aximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111 ),
TA = -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
Operating Voltage Range VDD 1.0 5.5 V
Specified VDD Value to VOUT lo w VDD 1.0 V I RST = 10 µA, V RST < 0.2V
Operating Current IDD —< 11.75µA
VDD Trip Point MCP1XX-195 VTRIP 1.872 1.900 1.929 V TA = +25°C (Note 1)
1.853 1.900 1.948 V TA = -40°C to +85°C (Note 2)
MCP1XX-240 2.285 2.320 2.355 V TA = +25°C (Note 1)
2.262 2.320 2.378 V Note 2
MCP1XX-270 2.591 2.630 2.670 V TA = +25°C (Note 1)
2.564 2.630 2.696 V Note 2
MCP1XX-290 2.857 2.900 2.944 V TA = +25°C (Note 1)
2.828 2.900 2.973 V Note 2
MCP1XX-300 2.886 2.930 2.974 V TA = +25°C (Note 1)
2.857 2.930 3.003 V Note 2
MCP1XX-315 3.034 3.080 3.126 V TA = +25°C (Note 1)
3.003 3.080 3.157 V Note 2
MCP1XX-450 4.314 4.380 4.446 V TA = +25°C (Note 1)
4.271 4.380 4.490 V Note 2
MCP1XX-475 4.561 4.630 4.700 V TA = +25°C (Note 1)
4.514 4.630 4.746 V Note 2
VDD Trip Point Tempco TTPCO ±100 ppm/°
C
Note 1: Trip point is ±1.5% from typical value.
2: Trip point is ±2.5% from typical value.
3: This specification allows this device to be used in PIC® microcontroller applications that require the In-Circuit Serial
Programming™ (I CSP ™) feature (see device-specific programming s pecific ations for voltage requirements). This
specification DOES NOT allow a continuous high voltage to be present on the open-drain output pin (VOUT). The total
time that the VOUT pin can be above the maximum device operational voltage (5.5V) is 100 sec. Current into the VOUT
pin should be limited to 2 mA. It is recommended that the device operational temperature be maintained between 0°C
to 70°C (+25°C preferred). For additional information, please refer to Figure 2-28.
4: This parameter is established by characterization and is not 100% tested.
2004-2013 Microchip Technology Inc. DS21889E-page 3
MCP111/112
Threshold Hysteresis
min. = 1%, max = 6%) MCP1XX-195 VHYS 0.019 0.114 V TA = +25°C
MCP1XX-240 0.023 0.139 V
MCP1XX-270 0.026 0.158 V
MCP1XX-290 0.029 0.174 V
MCP1XX-300 0.029 0.176 V
MCP1XX-315 0.031 0.185 V
MCP1XX-450 0.044 0.263 V
MCP1XX-475 0.046 0.278 V
VOUT Low-level Output Voltage VOL ——0.4VI
OL = 500 µA, VDD = VTRIP(MIN)
VOUT High-level Output Voltage VOH VDD0.6 V IOH = 1 mA, For only MCP112
(push-pull output)
Open-drain High Voltage on Output VODH 13.5
(3) VMCP111 only ,
VDD = 3.0V, Time voltage >
5.5V applied 100s,
current into pin limited to
2 mA, +25°C operation
recommended
Note 3, Note 4
Open-drain Output Leakage Current
(MCP111 only) IOD —0.1µA
DC CHARACTERISTICS (CONTINUE D)
Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only M CP111),
TA = -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
Note 1: Trip point is ±1.5% from typical value.
2: Trip point is ±2.5% from typical value.
3: This specification allows this device to be used in PIC® microcontroller applications that require the In-Circuit Serial
Programming™ (I CSP ™) feature (see device-specific programming s pecific ations for voltage requirements). This
specification DOES NOT allow a continuous high voltage to be present on the open-drain output pin (VOUT). The total
time that the VOUT pin can be above the maximum device operational voltage (5.5V) is 100 sec. Current into the VOUT
pin should be limited to 2 mA. It is recommended that the device operational temperature be maintained between 0°C
to 70°C (+25°C preferred). For additional in formation, please refer to Figure 2-28.
4: This parameter is established by characterization and is not 100% tested.
MCP111/112
DS21889E-page 4 2004-2013 Microchip Technology Inc.
FIGURE 1-1: Timing Diagram.
AC CHARACTERISTICS
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k
(only MCP111), TA = -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
VDD Detec t to VOUT Inactive tRPU —90 µs Figure 1-1 and CL = 50 pF
(Note 1)
VDD Detec t to VOUT Active tRPD 130 µs VDD ramped from VTRIP(MAX) +
250 mV down to VTRIP(MIN)
250 mV, per Figure 1-1,
CL = 50 pF (Note 1)
VOUT Rise Time After VOUT Active tRT —5 µs For VOUT 10% to 90% of final
value per Figure 1-1, CL = 50 pF
(Note 1)
Note 1: These parameters are for design guidance only and are not 100% tested.
Electrical Specifications: Unless otherwise noted, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k
(only MCP111), TA = -40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range TA-40 +85 °C MCP1XX-195
Specified Temperature Range TA-40 +125 °C Except MCP1XX-19 5
Maximum Junction Temp erature TJ——+150°C
Storage Temperature Range TA-65 +150 °C
Package Thermal Resistances
Thermal Resistance, 3L-SO T23 JA 336 °C/W
Thermal Resistance, 3L-SC-70 JA 340 °C/W
Thermal Resistance, 3L-TO-92 JA —131.9 °C/W
Thermal Resistance, 3L-SOT-89 JA —110 °C/W
1V
1V
VTRIP
VDD
VOUT
tRPU
VOH
tRT
tRPD
VOL
2004-2013 Microchip Technology Inc. DS21889E-page 5
MCP111/112
2.0 TYPICAL PE RFORMANCE CURVES
Note: Unless otherwise indicated, all limits are specified for V DD = 1V to 5.5V, RPU = 10 0 k (only MCP111;
see Figure 4-1), TA = -40°C to +125°C.
FIGURE 2-1: IDD vs. Temperature
(MCP111-195).
FIGURE 2-2: IDD vs. Temperature
(MCP112-300).
FIGURE 2-3: IDD vs. Temperature
(MCP112-475).
FIGURE 2-4: IDD vs. VDD (MCP111-195).
FIGURE 2-5: IDD vs. VDD (MCP112-300).
FIGURE 2-6: IDD vs. VDD (MCP112-475).
Note: The g r ap hs and t ables provided following this n ote are a statistical s umm ary based on a l im ite d n um ber of
samples and are provided for informational purpos es only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-40
-20
0
20
40
60
80
100
120
140
Temperature (°C)
IDD (uA)
1.7V
1.0V
2.1V
2.8V
4.0V
5.0V
5.5V
MCP111-195
0
0.2
0.4
0.6
0.8
1
1.2
-40
-20
0
20
40
60
80
100
120
140
Temper ature (°C )
IDD (uA)
1.7V
1.0V
2.1V
2.8V
4.0V
5.0V
MCP112-300 5.5V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-40
-20
0
20
40
60
80
100
120
140
Temperature (°C)
IDD (uA)
1.7V
1.0V
2.1V
2.8V
4.0V
5.0V
5.5V
MCP112-475
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.02.03.04.05.06.0
VDD (V)
IDD (uA)
-40°C
+25°C
+85°C
+125°C
MCP111-195
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.0 2.0 3.0 4.0 5.0 6.0
VDD (V)
IDD (uA)
MCP112-300
-40°C
+25°C
+85°C
+125°C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.0 2.0 3.0 4.0 5.0 6.0
VDD (V)
IDD (uA)
MCP112-475
-40°C
+25°C
+85°C
+125°C
MCP111/112
DS21889E-page 6 2004-2013 Microchip Technology Inc.
Note: Unless otherwise indicated, all limits are specified for V DD = 1V to 5.5V, RPU = 100 k (only MCP111;
see Figure 4-1), TA = -40°C to +125°C.
FIGURE 2-7: VTRIP and VHYST vs.
Temperature (MCP111-195).
FIGURE 2-8: VTRIP and VHYST vs.
Temperature (MCP112-300).
FIGURE 2-9: VTRIP and VHYST vs.
Temperature (MCP112-475).
FIGURE 2-10: VOL vs. IOL
(MCP111-195 @V
DD = 1.7V).
FIGURE 2-11: VOL vs. IOL
(MCP112-300 @V
DD = 2.7V).
FIGURE 2-12: VOL vs. IOL
(MCP112-475 @V
DD = 4.4V).
1.895
1.900
1.905
1.910
1.915
1.920
1.925
1.930
1.935
1.940
1.945
1.950
-60 -10 40 90 140
Temperature (°C)
VTRIP (V)
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
Hyst (V)
VTRIP, V decreasing
VTRIP, V increasing
VHYS, Hysteresis
MCP111-195
max temp is
+85°C
2.900
2.920
2.940
2.960
2.980
3.000
3.020
3.040
-60 -10 40 90 140
Temperature (°C)
VTRIP (V)
0.082
0.084
0.086
0.088
0.090
0.092
0.094
0.096
0.098
0.100
Hyst (V)
MCP112-300
VTRIP, V decreasing
VTRIP, V increasing
VHYS, Hysteresis
4.580
4.600
4.620
4.640
4.660
4.680
4.700
4.720
4.740
4.760
4.780
4.800
-60 -20 20 60 100 140
Temperature (°C)
VTRIP (V)
0.100
0.110
0.120
0.130
0.140
0.150
0.160
0.170
0.180
Hyst (V)
MCP112-475
VTRIP, V decreasing
VTRIP, V increasing
VHYS, Hysteresis
0.000
0.020
0.040
0.060
0.080
0.100
0.120
0.00 0.25 0.50 0.75 1.00
IOL (mA)
VOL (V)
-40°C
+25°C
+85°C
+125°C
MCP111-195
VDD = 1.7V
0.000
0.010
0.020
0.030
0.040
0.050
0.060
0.070
0.080
0.00 0.25 0.50 0.75 1.00
IOL (mA)
VOL (V)
MCP112-300
VDD = 2.7V
-40°C
+25°C
+85°C
+125°C
0.000
0.010
0.020
0.030
0.040
0.050
0.00 0.25 0.50 0.75 1.00
IOL (mA)
VOL (V)
MCP112-475
VDD = 4.4V
-40°C
+25°C
+85°C
+125°C
2004-2013 Microchip Technology Inc. DS21889E-page 7
MCP111/112
Note: Unless otherwise indicated, all limits are specified for V DD = 1V to 5.5V, RPU = 10 0 k (only MCP1 11;
see Figure 4-1), TA = -40°C to +125°C.
FIGURE 2-13: VOL vs. Temperature
(MCP111-195 @ VDD = 1.7V ).
FIGURE 2-14: VOL vs. Temperature
(MCP112-300 @ VDD = 2.7V).
FIGURE 2-15: VOL vs. Temperature
(MCP112-475 @ VDD = 4.4V).
FIGURE 2-16: VOH vs. IOH
(MCP112-300 @ VDD = 3.1V).
FIGURE 2-17: VOH vs. IOH
(MCP112-475 @ VDD = 4.8V).
FIGURE 2-18: Typical Transient Response
(25 °C).
0.000
0.020
0.040
0.060
0.080
0.100
0.120
-40 0 40 80 120
Temperature (°C)
VOL (V)
IOL = 0.00 mA
MCP111-195
VDD = 1.7 V
IOL = 0.25 mA
IOL = 0.50 mA
IOL = 0.75 mA
IOL = 1.00 mA
0.000
0.010
0.020
0.030
0.040
0.050
0.060
0.070
0.080
-40 0 40 80 120
Temperature (°C)
VOL (V)
MCP112-300
VDD = 2.7V
IOL = 0.00 mA
IOL = 0.25 mA
IOL = 0.50 mA
IOL = 0. 75 mA
IOL = 1.00 mA
0.000
0.010
0.020
0.030
0.040
0.050
-40 0 40 80 120
Temper ature (°C )
VOL (V)
IOL = 0.00 mA
IOL = 0.25 mA
IOL = 0.50 mA
IOL = 0.75 mA
IOL = 1.0 0 mA
MCP112-475
VDD = 4.4V
2.900
2.950
3.000
3.050
3.100
3.150
0.00 0.25 0.50 0.75 1.00
IOL (mA)
VOH (V)
-40 °C +25 °C
+85 °C
+125 °C
MCP112-300
VDD = 3.1V
4.680
4.700
4.720
4.740
4.760
4.780
4.800
4.820
0.00 0.25 0.50 0.75 1.00
IOL (mA)
VOH (V)
MCP112-475
VDD = 4.8V
-40 °C
+25 °C
+85 °C
+125 °C
0
100
200
300
400
500
600
0.001 0.01 0.1 1 10
VTRIP(min) - VDD
Transient D ur a t ion (µs)
MCP111-195
MCP112-475
MCP112-300
MCP111/112
DS21889E-page 8 2004-2013 Microchip Technology Inc.
Note: Unless otherwise indicated, all limits are specified for V DD = 1V to 5.5V, RPU = 100 k (only MCP111;
see Figure 4-1), TA = -40°C to +125°C.
FIGURE 2-19: tRPD vs. Temperature
(MCP111-195).
FIGURE 2-20: tRPD vs. Temperature
(MCP112-300).
FIGURE 2-21: tRPD vs. Temperature
(MCP112-475).
FIGURE 2-22: tRPU vs. Temperature
(MCP111-195).
FIGURE 2-23: tRPU vs. Temperature
(MCP112-300).
FIGURE 2-24: tRPU vs. Temperature
(MCP112-475).
0
50
100
150
200
250
300
350
-40 -15 10 35 60 85 110
Tempera tur e (°C)
tRPD (µs )
VDD decreasing from:
VTRIP(max) + 0.25V to VTRIP(min) - 0.25V
VDD decreasing from:
5V - 1.7V
VDD decreasing from:
5V - 0V
MCP111-195
0
20
40
60
80
100
120
140
160
-40 -15 10 35 60 85 110
Temperature (°C)
tRPD (µs)
VDD decreasing from:
VTRIP(max) + 0.25V to VTRIP(min) - 0.25V
VDD decreasing from:
5V - 2.7V
VDD decreasing from:
5V - 0V
MCP112-300
0
50
100
150
200
250
-40 -15 10 35 60 85 110
Temperature (°C)
tRPD (µs)
VDD decreasing from:
VTRIP(max) + 0.25V to VTRIP(min) - 0.25V
VDD decreasing from:
5V - 4.4V
VDD decreasing from:
5V - 0V
MCP112-475
0
50
100
150
200
250
300
350
400
-40 -15 10 35 60 85 110
Temperature (°C)
tRPU (µs)
VDD increasing from:
0V - 2.1V
VDD increasing
from: 0V - 5.5V
VDD increasing from:
0V - 2.8V VDD inc reasing
from: 0V - 4.0V
MCP111-195
0
20
40
60
80
100
120
140
-40 -15 10 35 60 85 110
Temperature (°C)
tRPU (µs )
VDD increasing from:
0V - 3.1V
VDD increasing from:
0V - 5.5V
VDD increasing from:
0V - 3.3V
VDD increasing from:
0V - 4.0V
MCP112-300
0
50
100
150
200
250
-40 -15 10 35 60 85 110
Tempera tur e (°C)
tRPU (µs )
VDD increasing from:
0V - 4.9V
VDD increasing from:
0V - 5.0V
VDD increasing from:
0V - 5.5V
MCP112-475
2004-2013 Microchip Technology Inc. DS21889E-page 9
MCP111/112
Note: Unless otherwise indicated, all limits are specified for V DD = 1V to 5.5V, RPU = 10 0 k (only MCP1 11;
see Figure 4-1), TA = -40°C to +125°C.
FIGURE 2-25: tRT vs. Temperature
(MCP111-195).
FIGURE 2-26: tRT vs. Temperature
(MCP112-300).
FIGURE 2-27: tRT vs. Temperature
(MCP112-475).
FIGURE 2-28: Open-Drain Leakage
Current vs. Voltage Applied to VOUT Pin
(MCP111-195).
20
25
30
35
40
45
50
55
60
-40 -15 10 35 60 85 110
Temperature (°C)
tRT (µs)
VDD increasing from:
0V - 2.1V
VDD increasing from:
0V - 5.5V
VDD increasing from:
0V - 2.8V
VDD increasing
from: 0V - 4.0V
MCP111-195
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
-40 -15 10 35 60 85 110
Temperature (°C)
tRT (µs)
VDD increasing from:
0V - 3.1V
VDD increasing from:
0V - 5.5V
VDD increasing from:
0V - 3.3V
VDD increasing from:
0V - 4.0V
MCP112-300
0.0800
0.0900
0.1000
0.1100
0.1200
0.1300
0.1400
0.1500
-40 -15 10 35 60 85 110
Temperature (°C)
tRT (µs)
VDD increasing from:
0V - 4.8V
VDD increasing from:
0V - 5.5V
VDD increasing from:
0V - 4.9V
VDD increasing from:
0V - 5.0V
MCP112-475
1.E-13
1.E-12
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
01234567891011121314
Pull-Up Voltage (V)
Open-Drain Leakage (A)
125°C
25°C - 40°C
10m
100µ
1m
10µ
10n
100n
1n
100p
1p
10p
100f
MCP111/112
DS21889E-page 10 2004-2013 Microchip Technology Inc.
3.0 PIN DESCRIPTION
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1: PIN FUNCTION TABLE
Pin No.
Symbol Function
SOT-23-3
SC-70 SOT-89-3 T0-92
111V
OUT Output State
VDD Falling:
H = VDD > VTRIP
L = VDD < VTRIP
VDD Rising:
H = VDD > VTRIP + VHYS
L = VDD < VTRIP + VHYS
223V
SS Gr ound reference
332V
DD Positive pow e r suppl y
—4V
DD Positive pow e r suppl y
2004-2013 Microchip Technology Inc. DS21889E-page 11
MCP111/112
4.0 APPLICATION INFORMATION
For many of today’s microcontroller applications, care
must be taken to prevent low-power conditions that can
cause many different system problems. The most
common causes are brown-out conditions, where the
system supply drops below the operating level momen-
tarily . The second most common cause is when a slowly
decaying power supply causes the microcontroller to
begin executing instructions without sufficient voltage to
sustain SRAM, thus producing indeterminate results.
Figure 4-1 shows a typical application circuit.
FIGURE 4-1: Typic al App li ca tio n Circui t.
4.1 VTRIP Operation
The volt age trip point ( VTRIP) is determi ned on the fallin g
edge of VDD. Th e actu al vol tage tr ip poi nt (V TRIPAC) will
be between the minimum trip point (VTRIPMIN) and the
maximum trip point (VTRIPMAX). There is a hysteresis on
this trip point to remove any “jitter” that would occur on
the VOUT pin when the device VDD is at the trip point.
Figure 4-2 shows the state of the VOUT pin as
determined by the VDD voltage. The VTRIP specification
is for falling VDD voltages. When the VDD voltage is
rising, the VOUT pin wil l n ot b e dri ve n h igh unt il V DD is at
VTRIP + VHYS.
FIGURE 4-2: VOUT Operation as Determined by the VTRIP and VHYS.
2
MCP11X
VDD
VDD
VDD
VOUT MCLR
(Reset Input)
VSS GND
PIC®
Microcontroller
3
1
RPU
Note 1: RPU may be required with the MCP111
due to the open-drain output. Resistor
RPU is not required with the MCP112.
0.1
µF (1)
VDD VTRIPMAX
VTRIPMIN VTRIPAC
VTRIPAC
VTRIPAC + VHYSAC
VOUT
1V
< 1 V is outside the
device spec ifications
MCP111/112
DS21889E-page 12 2004-2013 Microchip Technology Inc.
4.2 Negative Going VDD Transients
The minimum pulse width (time) required to cause a
reset may be an important criteria in the implementa-
tion of a Power-on Reset (POR) circuit. This time is
referred to as trans ient duration, de fined as the amount
of time needed for these supervisory devices to
respond to a drop in VDD. The tran sient du ration time i s
dependa nt on the magnitude of VTRIP – VDD. Generall y
speaking, the transient duration decreases with
increases in VTRIP – VDD.
Figur e 4-3 shows a typ ical tr ansient du ration vs . reset
comparator overdrive for which the MCP111/112 will
not generate a reset pulse. It shows that the farther
below the trip point the transient pulse goes, the
duration of the pulse required to cause a reset gets
shorter. Figure 2-18 shows the transient response
characteris ti cs for the MCP111/112.
A 0.1 µF bypass capacitor, mounted as close as
possible to the VDD pin, provides additional transient
immunity (refer to Figure 4-1).
FIGURE 4-3: Example of Typical
Transient Duration Waveform.
4.3 Effect of Temperature on T ime-ou t
Period (tRPU)
The time-out period (tRPU) determines how long the
device remains in the reset condition. This is affected
by both VDD and temperature. The graph shown in
Figur es 2-22, 2-23 and 2-24 show the ty pical respo nse
for different VDD values and temperatures.
4.4 Using in PIC® Microcontroller
ICSP ™ A p p lica t io n s (MC P 111
only)
Figure 4-4 shows the typical application circuit for using
the MCP111 for voltage supervisory function when the
PIC microcontroller will be programmed via the In-Cir-
cuit Serial Programming™ (ICSP) feature. Additional
information is available in TB087, “Using Voltage
Supervisors with PIC® Microcontroller Systems which
Implement In-Circuit Serial Programming™”,
DS91087.
FIGURE 4-4: Typical Application Circuit
for PIC® Microcontroller with the ICSP™ feature.
Time (µs)
0V
Supply Vo ltage
5V
VTRIP(MIN) - VDD
tTRANS
VTRIP(MAX)
VTRIP(MIN)
Note: It is recommend ed that th e current into the
RST pin be current limited by a 1 k
resistor.
VDD/VPP
VDD
MCLR
(reset input)
(Active-Low)
VSS
PIC®
MCU
RPU
0.1 µF
1k
MCP111
VDD
RST
VSS
2004-2013 Microchip Technology Inc. DS21889E-page 13
MCP111/112
5.0 PACKAGING INFORMATION
5.1 Package Marking Information
3-Pin SOT-23
3-Lead TO-92
XXXXXX
XXXXXX
XXXXXX
YWWNNN
Example:
MCP111
290E
TO^^
547256
Part Number SOT-23 Part Number SOT-23
MCP111T-195I/TT MPNN MCP112T-195I/TT MRNN
MCP111T-240ETT MQNN MCP112T-240ETT MSNN
MCP111T-270E/TT MGNN MCP112T-270E/TT MANN
MCP111T-290E/TT NHNN MCP112T-290E/TT MBNN
MCP111T-300E/TT MJNN MCP112T-300E/TT MCNN
MCP111T-315E/TT MKNN MCP112T-315E/TT MDNN
MCP111T-450E/TT MLNN MCP112T-450E/TT MENN
MCP111T-475E/TT MMNN MCP112T-475E/TT MFNN
Example:
XXNN
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanume ric trac ea bil ity code
Pb-free JEDEC designator for Matte Ti n (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the even t the full Mic rochip part nu mb er cann ot be marked o n one lin e, it wil l
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
3
e
3-Pin SOT-89 Example:
Part Number SOT-89 Part Number SOT-89
MCP111T-195I/MB MP MCP112T-195I/MB MR
MCP111T-240EMB MQ MCP112T-240EMB MS
MCP111T-270E/MB MG MCP112T-270E/MB MA
MCP111T-290E/MB NH MCP112T-290E/MB MB
MCP111T-300E/MB MJ MCP112T-300E/MB MC
MCP111T-315E/MB MK MCP112T-315E/MB MD
MCP111T-450E/MB ML MCP112T-450E/MB ME
MCP111T-475E/MB MM MCP112T-475E/MB MF
XXYYWW
NNN
MCP111/112
DS21889E-page 14 2004-2013 Microchip Technology Inc.
Package Marking Information (Continued)
3-Pin SC-70
Top Side
Part Number SC-70 Part Number SC-70
MCP111T-195I/LB EPN MCP112T-195I/LB ERN
MCP111T-240E/LB EQN MCP112T-240E/LB ESN
MCP111T-270E/LB EGN MCP112T-270E/LB EAN
MCP111T-290E/LB EHN MCP112T-290E/LB EBN
MCP111T-300E/LB EJN MCP112T-300E/LB ECN
MCP111T-315E/LB EKN MCP112T-315E/LB EDN
MCP111T-450E/LB ELN MCP112T-450E/LB EEN
MCP111T-475E/LB EMN MCP112T-475E/LB EFN
Example:
XXN
Top Side
Par t Number SC-70 P art Nu mber SC -70
MCP111T-195I/LB EPNN MCP112T-195I/LB ERNN
MCP111T-240E/LB EQNN MCP112T-240E/LB ESNN
MCP111T-270E/LB EGNN MCP112T-270E/LB EANN
MCP111T-290E/LB EHNN MCP112T-290E/LB EBNN
MCP111T-300E/LB EJNN MCP112T-300E/LB ECNN
MCP111T-315E/LB EKNN MCP112T-315E/LB EDNN
MCP111T-450E/LB ELNN MCP112T-450E/LB EENN
MCP111T-475E/LB EMNN MCP112T-475E/LB EFNN
Example:
XXNN
OR
2004-2013 Microchip Technology Inc. DS21889E-page 15
MCP111/112
3-Lead Plastic Small Outline Transistor (MB) (SOT89)
0.560.43.022.017BLead 2 Width
0.440.35.017.014
c
Lead Thickness
1.831.62.072.064D1Tab Length
4.604.40.181.173DOverall Length
2.292.13.090.084E1
Molded Package Width at Top
4.253.94.167.155HOverall Width
1.601.40.063.055AOverall Height
3.00 BSC.118 BSC
p1
Outside lead pitch (basic)
1.50 BSC.059 BSC
p
Pitch
MAXMINMAXMINDimension Limits
MILLIMETERS*INCHESUnits
shall not exceed .005" (0.127mm) per side.
Notes:
JEDEC Equivalent: TO-243
Drawing No. C04-29
*Controlling Parameter
Foot Length L .035 .047 0.89 1.20
Leads 1 & 3 Width B1 .014 .019 0.36 0.48
Molded Package Width at Base
E .090 .102 2.29 2.60
Tab Corner Radii R 0.254.010
Revised 07-24-03
p1
p
A
C
E
H
DD1
B1
L
E1
B1
B
1
2
3
R
Dimensions D and E1 do not include mold or flash protrusions. Mold flash or protrusions
Note: For the most cu rr e nt pac ka ge dr aw i ngs, p le ase se e t he Mi c ro c hi p Pa ck ag ing Specifica t i on lo ca t ed
at http://www.microchip.com/packaging
MCP111/112
DS21889E-page 16 2004-2013 Microchip Technology Inc.
3-Lead Plastic Small Outline Transistor (TT) (SOT-23)
10501050
Mold Draft Angle Bottom 10501050
Mold Draft Angle Top 0.510.440.37.020.017.015BLead Width 0.180.140.09.007.006.004
c
Lead Thickness 10501050
Foot A ngle 0.550.450.35.022.018.014LFoot Length 3.042.922.80.120.115.110DOverall Length 1.401.301.20.055.051.047E1Molded Pa ckag e Width 2.642.372.10.104.093.083EOverall Width 0.100.060.01.004.002.000A1Standoff § 1.020.950.88.040.037.035A2Molded Packag e Thickness 1.121.010.89.044.040.035AOverall Height 1.92.076
p1
Outside lead pitch (basic) 0.96
.038
p
Pitch 33
n
Numb er of Pin s MAXNOMMINMAXNOMMINDimension Limits MILLIMETERSINCHES*Units
2
1
p
D
B
n
E
E1
L
c
A2
A
A1
p1
* Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: TO-236
Drawing No. C04-104
§ Significant Characteristic
Note: For the most cu rr e nt pac ka ge dr aw i ngs, p le ase se e t he Mi c ro c hi p Pa ck ag ing Specifica t i on lo ca t ed
at http://www.microchip.com/packaging
2004-2013 Microchip Technology Inc. DS21889E-page 17
MCP111/112
3-Lead Plastic Small Outline Transistor (LB) (SC-70)
12°12°
b
Mold Draft Angle Bottom
12°12°
a
Mold Draft Angle Top
0.400.15.016.006BLead Width
0.250.08.010.003
c
Lead Thickness
0.410.10.016.004LFoot Length
2.251.80.089.071DOverall Length
1.351.15.053.045E1Molded Package Width
2.401.80.094.071EOverall Width
.0100.00.0004.000A1Standoff
1.000.80.039.031A2Molded Package Thickness
1.100.80.043.031AOverall Height
1.30 BSC.
p1
Outside lead pitch (basic)
0.65 BSC.
p
Pitch
33Number of Pins
MAXMINMAXMINDimension Limits
MILLIMETERS*INCHESUnits
shall not exceed .005" (0.127mm) per side.
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions
Notes:
JEITA (EIAJ) Equivalent: SC70
Drawing No. C04-104
*Controlling Parameter
L
B
E1
E
p
c
p1 D
1
2
3
b
a
A A2
A1
.026 BSC.
.051 BSC.
Note: For the most cu rr e nt pac ka ge dr aw i ngs, p le ase se e t he Mi c ro c hi p Pa ck ag ing Specifica t i on lo ca t ed
at http://www.microchip.com/packaging
MCP111/112
DS21889E-page 18 2004-2013 Microchip Technology Inc.
3-Lead Plastic Transistor Outline (TO) (TO-92)
432432
Mold Draft Angle Bottom 654654
0.560.480.41.022.019.016BLead Width 0.510.430.36.020.017.014
c
Lead Thickness
2.412.292.16.095.090.085RMo lded Package Radiu s 4.954.644.32.195.183.170DOverall Length 4.954.714.45.195.186.175E1Overall Width 3.943.623.30.155.143.130ABottom to Package Flat 1.27.050
p
Pitch 33
n
Number of Pins MAXNOMMINMAXNOMMINDimension Limits MILLIMETERSINCHES*Units
R
n
1
3
p
L
B
A
c
1
D
2
E1
Tip to Seating Plane L .500 .555 .610 12.70 14.10 15.49
*Controlling Parameter
Mold Draft Angle Top
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: TO-92
Drawing No. C04-101
Note: For the most cu rr e nt pac ka ge dr aw i ngs, p le ase se e t he Mi c ro c hi p Pa ck ag ing Specifica t i on lo ca t ed
at http://www.microchip.com/packaging
2004-2013 Microchip Technology Inc. DS21889E-page 19
MCP111/112
5.2 Product Tape and Reel Specifications
FIGURE 5-1: EMBOSSED CARRIER DIMENSIO NS (8, 12, 16 AND 24 MM TAPE ONLY)
FIGURE 5-2: 3-LEAD SOT-23/SC70 DEVICE TAPE AND REEL SPECIFICATIONS
Top
Cover
Tape
K0
P
W
B0
A0
TABLE 1: CARRIER TAPE/CAVITY DIMENSIONS
Case
Outline Package
Type
Carrier
Dimensions Cavity
Dimensions Output
Quantity
Units
Reel
Diameter in
mm
W
mm P
mm A0
mm B0
mm K0
mm
TT SOT-23B 3L 8 4 3.15 2.77 1.22 3000 180
LB SC-70 3L 8 4 2.4 2.4 1.19 3000 180
Standard Reel Component Orientation
Device
Marking
PIN 1
User Direction of Feed
W
P
MCP111/112
DS21889E-page 20 2004-2013 Microchip Technology Inc.
FIGURE 5-3: TO-92 DEVICES
FIGURE 5-4: SOT-89 DEVICES
Device
Marking
P
Seal
Tape
Back
Tape
MARK
FACE
User Direction of Feed
W
MARK
FACE
MARK
FACE
Note: Bent leads are for Tape and Reel only.
User Direction of Feed
P, Pitch
Standard Reel Component Orientation Reverse Reel Component Orientation
W, Width
of Carrier
Tape
Pin 1
2004-2013 Microchip Technology Inc. DS21889E-page 21
MCP111/112
APPENDIX A: REVISION HISTORY
Revision E (January 2013)
Added a note to each pa ckage outline drawing.
Revision D (June 2005)
1. Added SOT-89-3 package information
throughout.
Revision C (March 2005)
The following is the list of modifications:
1. Added Section 4.4 “Using in PIC® Microcon-
troller ICSP™ Applications (MCP111 only)”
on using the MCP111 in PIC microcontroller
ICSP applicati on s.
2. Added VODH specifications in Section 1.0
“Electrical Characteristics” (for ICSP
applications).
3. Adde d Figure 2-28.
4. Added devices features table to page 1.
5. Updated SC-70 package markings and added
Pb-free marking information to Section 5.0
“Packaging information”.
6. Added Appendix A: “Revision History”.
Revision B (August 2004)
1. Corrected package marking information in
Section 5.0 “Packaging information”
Revision A (May 2004)
Original Rel ease of this Document.
MCP111/112
DS21889E-page 22 l 2004-2013 Microchip Technology Inc.
NOTES:
2004-2013 Microchip Technology Inc. DS21889E-page 23
MCP111/112
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device: MCP111 : MicroPo w er Voltage Detector, open-dra i n
MCP111T: Mic roPower Voltage Detect or, open-drain
(Tape and Ree l)
MCP11 2: Mic roP o wer Voltage Detector, push-p ull
MCP11 2T: MicroP o wer Voltage Detector, push-p ull
(Tape and Ree l)
Monitor i ng Optio ns: 195 = 1.90V
240 = 2.32V
270 = 2.63V
290 = 2.90V
300 = 2.93V
315 = 3.08V
450 = 4.38V
475 = 4.63V
Temperature Range: I = -40°C to +85°C (MCP11X-195 only)
E = -40°C to +125°C (Except MCP11X-195 only)
Package: LB = SC-70, 3-lead
MB = SOT-89, 3-lead
TO = TO-92, 3-l ead
TT = SOT-23B, 3-lead
PART NO. XXX X
Temperature
Monitoring
Options
Device
Examples:
a) MCP 111T- 19 5I/T T: Tape and Reel,
1.95V option, open-dr ain,
-40°C to +85°C,
SOT-23B package.
b) MCP 111T-315E /LB : Tape and Reel,
3.15V option, open-drain,
-40°C to +125°C,
SC-70-3 package.
c) MCP111-300E/TO: 3.00V option, open-drain,
-40°C to +125°C,
TO-92-3 package.
d) MCP111-315E/MB: 3.15V option, open-drain,
-40°C to +125 °C,
SOT-89-3 pac kage .
a) MCP 112T-290E/T T: Tape and Ree l,
2.90V o ptio n, push -p ull, -
40°C to +125°C,
SOT-23B-3 package.
b) MCP 112T-475E/L B : Tape and Reel ,
4.75V option, push-pull,
-40°C to +125°C,
SC-70-3 package.
c) MCP112-450E/TO: 4.5V option, push-pull,
-40°C to +125°C,
TO-92-3 package.
d) MCP112-315E/MB: 3.15V option, push-pull,
-40°C to +125 °C,
SOT-89-3 package .
Range
XX
Package
X
Tape/Reel
Option
MCP111/112
DS21889E-page 24 2004-2013 Microchip Technology Inc.
NOTES:
2004-2013 Microchip Technology Inc. DS21889E-page 25
Information contained in this publication regarding device
applications a nd the lik e is provided only f or yo ur convenience
and may be supers ed ed by u pda t es . It is y our responsibil it y to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip T echnology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM ,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONIT OR, FanSense, HI- TIDE, In-Circuit Se rial
Programm ing, ICSP, Mindi, MiWi, MPASM, MPF, MP LAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip T echnology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Tec hnolo gy Germ any II GmbH & C o. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2004-2013, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620769133
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that it s family of products is one of the most secure families of its kind on the market t oday, when used in the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.
Code protection is c onstantly evolving. We a t Microc hip are co m mitted to continuously improving the code prot ect ion featur es of our
products. Attempts to break Microchip’ s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperiph erals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITY MANAGEMENT S
YSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
DS21889E-page 26 2004-2013 Microchip Technology Inc.
AMERICAS
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasc a , IL
Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Los A n ge les
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
ASIA/PACIFIC
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
China - Hangzhou
Tel: 86-571-2819-3187
Fax: 86-571-2819-3189
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
ASIA/PACIFIC
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
Japan - Osaka
Tel: 81-6-6152-7160
Fax: 81-6-6152-9310
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
Taiwan - Kaohsiung
Tel: 886-7-213-7828
Fax: 886-7-330-9305
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
EUROPE
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Cop e nha gen
Tel: 45-4450-2828
Fax: 45-4485-2829
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-14 4-44
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08 -91
UK - Wokingham
Tel: 44-118-921- 5869
Fax: 44-118-921-5820
Worldwide Sales and Service
11/29/12