MIL SPECS Ich OoooleSs OOg1,e7y 4 | 7- Of- C7 { NOTICE i t__INCH-POUND __! {OF VALIDATION | MIL-S8-19500/240E NOTICE 1 24 August 1988 ~ MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, TYPES 1N645, 1N647, 1N649, JAN AND JANTX; 1N645-1, 1N647-1 iN649-1, JAN, JANTX, JANTXV, AND JANS MIL-S-19500/240E, dated 23 September 1982, has been reviewed and determined to be valid for use in acquisition. Custodians: Preparing activity: Army - ER Navy - EC Navy EC Air Force - 17 Agent: NASA - MSFC - EGOZ DLA - ES Review activities: Army AR, AV, MI Navy - SH Air Force - i1, 99 DLA - ES User activities: army - SM Navy - AS, CG, MC Air Force - 19 NASA ~ NA AMSC N/A FSC 5941 DISTRIBUTION STATEMENT A: Approved for public release; distribution is unlimited.weer oe ee 1 MIL SPECS Ich 00001285 0001275 bt i MIL-S-19500/2408 caer SUP, D MIL -S-19500/240D 5 April 1973 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N645, 1N647, 1N649, JAN AND JANTX; 1N645-1, 1N647-1, iN649-1, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Depart- ments and Agencies of the Deparment of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for a general purpose silicon diode. Four levels of product assurance are provided for each device type as specified in MIL-S-19500. 1.2 Physical dimensions. See figure 1. 1.3 Maximum ratings. | ] ] ] To T Io i/ IF rT | Ist [Barometric | | | | 3 ty = 120 s | (ambfent I(ambyent |pressure, ! Type WRsM {VR IT = 150C Ta = 25C Ta = 150C {temperature} {temperature} Ireduced | r_, rT ! | ! v(pk) v(pk) mA mA A ! Cc ! c | mmHg 11N645, 1N645-1| 270 1 225 | 150 | 400 5 | -65 to | -65 to l 8 }1N647, 1N647-1] 480 {| 400 | 150 400 5 | +175 1 +200 |1N649, N64 9-1) 720 | 600 | 150 400 5 | ! 1/ Derate 2.0 mA/C between 25C and 150C. Derate 6 mA/C between 150C and 175C. 1.4 Primary electrical characteristics at Ta = 25C unless otherwise indicated. T Ve at Tr = 400 mA dc, | 2b duty cycle, 8.3 ms Ip at Ta = 25 C Ip at Ta = 150 C | i i | | | 1 | | Type | max pulse width | i | Vdc (max) | uA dc (max) at YR | uA dc (max) at Vp ] 11N645 =| 1.0 | .025 225 Vdc { 15 225 V de | {1N647 | 1.0 } .025 400 Vde | 15 400 Vdc | {1N649 | 1.0 | .050 600 Vde | 25 600 Vdc | | 1N645-1 1.0 | .050 225 Vdc [| 25 225 Vde | 11N647-1 1.0 | .050 400 V de { 25 400 V dc [1N649-1 1.0 | .050 600 Vde | 25 600 V dc 2. APPLICABLE DOCUMENTS 2.1 Government specifications and standards. Unless otherwise specified, the following specifications and standards, of the fssue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this specification to the extent specified herein. TBeneficTal comments (recommendations, additions, deletTons) and any pertinent data which may be of | luse in improving this document should be addressed to: Naval Electronic Systems Command, ATTN: ELEX | 18111, Washington, DC 20363 by using the self-addressed Standardization Document Improvement Proposal | 1(DD Form 1426) appearing at the end of this document or by letter. | 1 of 12 FSC 5961 oMIL SPECS Icy O000Les UUOle?vb O B MIL -S-19500/240E SPECIFICATION MILITARY MIL-S-19500 - Semiconductor Devices, General Specification for. STANDARD , MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of specifications, standards, handbooks, drawings, and publications required by manufacturers fin connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting officer. ) 2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein, the text of this specification shal] take precedence. 3. REQUIREMENTS 3.1 Detail specification. The individual item requirements shall be in accordance with MIL-S-19500, and as specified herein. 3.2 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-S-19500. 3.3 Design, construction, and physical dimensions. Diodes shall be of the design, construction, and physical dimensions as shown on figure 1. 3.3.1 Lead finish. Lead finish shall be gold plated, silver plated, or tinned. Lead finish may be specified Tn the contract or purchase order (see 6.2), without affecting the qualified product status of the device or applicable JAN marking. 3.3.2 Dash 1 device construction. These devices shall be constructed utilizing high temperature metallurgical bonding between both sides of the silicon die and terminal pins. 3.4 Marking. Device marking shall be in accordance with MIL-5-19500. It is permissable to have the type desfgnation on more than one line. At the option of the manufacturer the following markings may be omitted. a. Manufacturer's identification. b. Country of origin. c. Lot identification code (1N645-1, 1N647-1, and 1N649-1 only). d. 1N" portion of the type designation (1N645-1, 1N647-1, and 1N649-1 only). 3.4.1 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. No color coding will be pennitted. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-S-19500, and as specified herein. 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-S-19500. 4.3 Screening (JANS, JANTX, and JANTXY levels only). Screening shall be in accordance with MIL-S-19500 teable II) and as speciffed herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.