SSM3J328R TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS) SSM3J328R Power Management Switch Applications +0.08 (max) (@VGS = -1.5 V) (max) (@VGS = -1.8 V) (max) (@VGS = -2.5 V) (max) (@VGS = -4.5 V) 0.05 M A Characteristic Gate-source voltage DC Drain current Pulse 2 0.95 Symbol Rating Unit VDSS -20 V V VGSS 8 -6.0 IDP (Note 1,2) -24.0 PD (Note 3) Power dissipation 2.40.1 1 ID (Note 1) 0.95 2.90.2 A A 1: Gate 1 t = 10s +0.08 0.17 -0.07 3 Absolute Maximum Ratings (Ta = 25C) Drain-source voltage 0.42 -0.05 0.8+0.08 -0.05 1.5-V drive Low ON-resistance: RDS(ON) = 88.4m RDS(ON) = 56.0m RDS(ON) = 39.7m RDS(ON) = 29.8m 1.80.1 * * Unit: mm W 2 Channel temperature Tch 150 C Storage temperature range Tstg -55 to 150 C 2: Source SOT-23F 3: Drain JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 2-3Z1A reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 11 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150C during use. Note 2: PW 10s,Duty 1 Note 3: Mounted on a FR4 board. 2 (25.4 mm x 25.4 mm x 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit (Top view) 3 3 KFH 1 2 1 2 Start of commercial production 2010-08 1 2014-03-01 SSM3J328R Electrical Characteristics (Ta = 25C) Characteristic Drain-source breakdown voltage Symbol Test Conditions Min Typ. Max Unit -20 V -15 V -1 A A V (BR) DSS ID = -1 mA, VGS = 0 V V (BR) DSX ID = -1 mA, VGS = 5 V (Note 5) Drain cut-off current IDSS Gate leakage current IGSS VGS = 8 V, VDS = 0 V 1 Vth VDS = -3 V, ID = -1 mA -0.3 -1.0 V Yfs VDS = -3 V, ID = -1.0 A (Note 4) 4.5 9.1 S ID = -3.0 A, VGS = -4.5 V (Note 4) 24.9 29.8 ID = -2.5 A, VGS = -2.5 V (Note 4) 31.1 39.7 ID = -1.5 A, VGS = -1.8 V (Note 4) 38.8 56.0 ID = -0.5 A, VGS = -1.5 V (Note 4) 47.4 88.4 Gate threshold voltage Forward transfer admittance Drain-source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs1 VDS = -10 V, VGS = 0 V f = 1 MHz VDD = -10 V, IDS = -4.0 A, VGS = -4.5 V 840 118 99 12.8 1.4 3.0 Turn-on time ton VDD = -10 V, ID = -2.0 A 32 Turn-off time toff VGS = 0 to -2.5 V, RG = 4.7 107 0.87 1.2 Gate-drain charge Switching time VDS = -20 V, VGS = 0 V Qgd Drain-Source forward voltage VDSF ID = 6.0 A, VGS = 0 V (Note 4) m pF nC ns V Note4: Pulse test Note5: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (a) Test Circuit (b) VIN 0V 90% OUT 0 IN 10% -2.5 V RG -2.5V 10 s RL (c) VOUT VDS (ON) 90% VDD VDD = -10 V RG = 4.7 Duty 1% VIN: tr, tf < 5 ns Common Source Ta = 25C 10% VDD tr ton tf toff Notice on Usage Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (-1 mA for the SSM3J328R). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness and pad area. When using this device, please take heat dissipation into consideration. 2 2014-03-01 SSM3J328R ID - VDS ID - VGS -10 VGS =-4.5 V -100 -1.8 V -2.5 V -10 Drain current Drain current -1 ID ID -1.5 V -6 -4 -2 Common Source Ta = 25 C Pulse test 0 -0.2 -0.6 -0.4 Drain-source voltage -0.8 VDS Pulse test (A) (A) -8 0 Common Source VDS = -3 V -0.1 Ta = 100 C -25 C -0.01 -0.001 25 C -0.0001 0 -1 -0.5 (V) Drain-source ON-resistance RDS (ON) (m) Drain-source ON-resistance RDS (ON) (m) 60 25 C 20 0 100 80 60 25 C 40 Ta = 100 C 20 - 25 C 0 -2 -4 Gate-source voltage -6 VGS - 25 C 0 -8 0 (V) -2 -6 VGS -8 (V) RDS (ON) - Ta 140 Common Source Ta = 25C 120 Pulse test Drain-source ON-resistance RDS (ON) (m) 120 -4 Gate-source voltage RDS (ON) - ID 140 Drain-source ON-resistance RDS (ON) (m) (V) ID =-2.5A Common Source Pulse test 120 80 Ta = 100 C -2.0 RDS (ON) - VGS 100 40 VGS 140 ID =-0.5A Common Source Pulse test 120 -1.5 Gate-source voltage RDS (ON) - VGS 140 -1.0 -1.5 V 100 80 60 -1.8 V 40 20 -4.5 V Common Source Pulse test 100 80 -1.5 A / -1.8 V -2.5 A / -2.5 V ID = -0.5 A / VGS = -1.5 V 60 40 20 -3.0 A / -4.5 V -2.5 V 0 0 -2.0 -4.0 -6.0 Drain current ID -8.0 0 -50 -10.0 0 50 Ambient temperature (A) 3 100 Ta 150 (C) 2014-03-01 SSM3J328R Vth - Ta -0.6 -0.4 -0.2 50 0 100 Ambient temperature VDS = -3 V Ta = 25 C Ta 150 0.1 -0.01 -0.1 -1 -10 ID -100 (A) Dynamic Input Characteristic (V) Ciss 300 Coss 100 50 Common Source 30 Ta = 25 C f = 1 MHz VGS = 0 V Crss -1 -10 Drain-source voltage -100 VDS VDD = -16 V -4 -2 Common Source ID = -4.0 A Ta = 25 C 10 (A) 10 IDR t 100 ton 10 tr -0.1 Drain current Qg 30 (nC) Common Source VGS = 0 V Ta = 25 C D Pulse test IDR G S 1 0.1 25 C 0.01 100 C -0.01 20 IDR - VDS 100 Drain reverse current tf 0 Total Gate Charge Common Source VDD = -10 V VGS = 0 to -2.5 V Ta = 25 C RG = 4.7 toff VDD = -10 V (V) t - ID 10000 1 -0.001 -6 0 10 -0.1 1000 0.3 -8 VGS Capacitance 500 1.0 Drain current Gate-source voltage (pF) C 1000 3.0 (C) 5000 3000 10 C - VDS 10000 (ns) 30 Common Source Pluse test 0 -50 Switching time (S) -0.8 Forward transfer admittance Vth (V) Gate threshold voltage Common Source VDS = -3 V ID = -1 mA 100 Yfs |Yfs| - ID -1.0 -1 ID 0.001 0 -10 0.2 -25 C 0.4 0.6 Drain-source voltage (A) 4 0.8 VDS 1.0 1.2 (V) 2014-03-01 SSM3J328R Rth - tw PD - Ta 1000 (25.4mm x 25.4mm x 1.6mm , Cu Pad : 645 mm2) b: Mounted on FR4 board (25.4mm x 25.4mm x 1.6mm , Cu Pad : 0.72 mm2 x3) (mW) b a 1200 a PD 100 Power dissipation Transient thermal impedance Rth (C/W ) 1600 a: Mounted on FR4 board 10 Single pulse a. Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 mm, Cu Pad: 645 mm2) b. Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 mm, Cu Pad: 0.72 mm2x3) 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 800 400 0 -40 1000 b -20 0 20 40 60 80 Ambient temperature (s) 5 100 Ta 120 140 160 (C) 2014-03-01 SSM3J328R RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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