HEXFET® Power MOSFET
IRFI530NPbF
PD - 95419
06/16/04
VDSS = 100V
RDS(on) = 0.11Ω
ID = 12A
S
D
G
TO-220 FULLPAK
lAdvanced Process Technology
lIsolated Package
lHigh Voltage Isolation = 2.5KVRMS
lSink to Lead Creepage Dist. = 4.8mm
lFully Avalanche Rated
lLead-Free
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case 3.7
RθJA Junction-to-Ambient 65
Thermal Resistance
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 12
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 8.6 A
IDM Pulsed Drain Current 60
PD @TC = 25°C Power Dissipation 41 W
Linear Derating Factor 0.27 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 150 mJ
IAR Avalanche Current 9.0 A
EAR Repetitive Avalanche Current4.1 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm)
Absolute Maximum Ratings
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
°C/W
IRFI530NPbF
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆T
JBreakdown Voltage Temp. Coefficient 0.12 V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 0.11 ΩVGS = 10V, ID = 6.6A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 6.4 S VDS = 50V, ID = 9.0A
25 VDS = 100V, VGS = 0V
250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage 100 VGS = 20V
Gate-to-Source Reverse Leakage -100 VGS = -20V
QgTotal Gate Charge 44 ID = 9.0A
Qgs Gate-to-Source Charge 6.2 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge 21 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 6.4 VDD = 50V
trRise Time 27 ID = 9.0A
td(off) Turn-Off Delay Time 37 RG = 12Ω
tfFall Time 25 RD = 5.5Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance 640 VGS = 0V
Coss Output Capacitance 160 VDS = 25V
Crss Reverse Transfer Capacitance 88 = 1.0MHz, See Fig. 5
C Drain to Sink Capacitance 12 = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage 1.3 V TJ = 25°C, IS = 6.6A, VGS = 0V
trr Reverse Recovery Time 130 190 ns TJ = 25°C, IF = 9.0A
Qrr Reverse Recovery Charge 650 970 nC di/dt = 100A/µs
nH
µA
nA
IDSS Drain-to-Source Leakage Current
IGSS
ns
S
D
G
4.5
7.5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
pF
Source-Drain Ratings and Characteristics
A
60
12
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25°C, L = 3.1mH
RG = 25Ω, IAS = 9.0A. (See Figure 12)
t=60s, =60Hz
ISD ≤ 9.0A, di/dt ≤ 520A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Uses IRF530N data and test conditions
Pulse width ≤ 300µs; duty cycle ≤ 2%.
LSInternal Source Inductance
IRFI530NPbF
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
1
10
100
0.1 1 10 100
I , Drai n-t o-Source Curr ent (A)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
20µs PULSE WIDTH
T = 25°C
A
4.5 V
J
1
10
100
0.1 1 10 100
4.5V
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
A
20µs PULSE WID TH
T = 17 5°C
J
1
10
100
45678910
T = 25°C
J
GS
V , Gate -to-Sour c e Vo ltage (V )
D
I , Drain-to-Source Current (A)
V = 50V
20µs PULS E WI D TH
DS
T = 175°C
J
A
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-S o urce On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 15A
D
IRFI530NPbF
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
200
400
600
800
1000
1200
1 10 100
C , Capaci tanc e (pF)
DS
V , Drain-to- Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 5 10 15 20 25 30 35 40 45
Q , Total Gate Charge (nC)
G
V , Gate-to-Source V ol tage (V)
GS
V = 80V
V = 50V
V = 20V
A
FOR TEST CIRCUIT
SEE FIGURE 13
I = 9.0A
D
DS
DS
DS
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.
6
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reve rse Drain Curren t (A)
SD
SD
A
T = 175°C
J
1
10
100
1000
1 10 100 100
0
V , Drain-to-Source Voltag e (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 25°C
T = 175°C
Single Pulse
C
J
IRFI530NPbF
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0.0
2.0
4.0
6.0
8.0
T , C a se Temperature ( C)
I , Drain Current (A)
°
C
D
IRFI530NPbF
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
VDS
L
D.U.T.
VD
D
IAS
tp
0.01Ω
RG+
-
tp
V
DS
I
AS
VDD
V
(BR)DSS
10 V
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
D.U.T. V
D
S
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 13b. Gate Charge Test Circuit
0
50
100
150
200
250
300
350
25 50 75 100 125 150 17
5
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperatu re (°C)
V = 25V
I
TOP 3.7A
6.4A
BOTTOM 9.0A
DD
D
IRFI530NPbF
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
* VGS = 5V for Logic Level Devices
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
Fig 14. For N-Channel HEXFETS
Peak Diode Recovery dv/dt Test Circuit
IRFI530NPbF
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/04
TO-220 Full-Pak Part Marking Information
WITH ASSEMBLY
EX AMPLE: THIS IS AN IRFI84 0G
L OT CODE 34 32
ASSEMBLED ON WW 24 19 99
IN THE ASSEMBLY LINE "K"
PART NUMBER
LOT CODE
ASSEMBLY
INTERNATIONAL
RECTIFIER
LOGO 34 32
924K
IRFI840G
DATE CODE
YEAR 9 = 1999
WEEK 24
LINE K
Note: "P" in as sembly line
position indicates "Lead-Free"
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
