©2000 Fairchild Semiconductor International Rev. A, February 2000
BD243/A/B/C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test :PW=300µs, duty Cycle<20% Pulsed
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BD24 3
: BD243A
: BD243B
: BD243C
45
60
80
100
V
V
V
V
VCEO Collector-Emitter Voltage: BD24 3
: BD243A
: BD243B
: BD243C
45
60
80
100
V
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 6 A
ICP *Collector Current (Pulse) 10 A
IB Base Current 2 A
PC Collector Dissipation (TC=25°C) 65 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emit ter Sustai ni ng Voltage
: BD2 43
: BD243A
: BD243B
: BD243C
IC=30mA , IB=0
45
60
80
100
V
V
V
V
ICEO Collect or Cut- of f Current : BD243/243A
: BD243B/243C VCE = 30 V, IB = 0
VCE = 60 V, IB = 0 0.7
0.7 mA
mA
ICES Collector Cut-off Current : BD243
: BD243A
: BD243B
: BD243C
VCE = 45 V, VBE = 0
VCE = 60 V, VBE = 0
VCE = 80 V, VBE = 0
VCE = 10 0V, VBE = 0
0.4
0.4
0.4
0.4
mA
mA
mA
mA
IEBO Emitter Cut-off Current VEB = 5V, I C = 0 1 mA
hFE *DC Current Gain VCE = 4V, IC = 0.3A
VCE = 4V, IC = 3A 30
15
VCE(sat) *Collector-Emit ter Sat urat ion Voltage IC = 6A, IB = 1A 1.5 V
VBE(on) *Base-Emitter O N Voltage VCE = 4V, IC = 6A 2 V
BD243/A/B/C
Medium Power Linear and Switching
Applications
Complement to BD244, BD244A, BD244B and BD244C respectively
1.Base 2.Collector 3.Emitter
1TO-220
©2000 Fairchild Semiconductor International
BD243/A/B/C
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area
Figure 5. Power Derating
0.01 0.1 1 10
10
100
1000
VCE = 2V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
IC = 10.1 IB
VBE(sat)(V), SATURATION V OLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10
0.01
0.1
1
IC = 10.1 IB
VBE(sat)(V), SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
110100
0.1
1
10
100
BD243
BD243A
BD243B
BD243C
DC
10ms
1ms
10µs
100µs
IC(max)
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EM ITTER VOL TAGE
0 25 50 75 100 125 150 175 200
0
10
20
30
40
50
60
70
80
PC[W], POWER DISSIPATION
T[oC], CASE TEMPERATURE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD243/A/B/C
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
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