30A02SP - Sanyo Semiconductor

30A02SP

No.7361-1/4

PNP Epitaxial Planar Silicon Transistor

Applications

•Low-frequency Amplifer, high-speed switching,

small motor drive.

Features

•Large current capacitance.

•Low collector-to-emitter saturation voltage (resistance).

RCE(sat) typ=580Ω[IC=0.7A, IB=35mA].

•Small ON-resistance (Ron).

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage VCBO --30 V

Collector-to-Emitter Voltage VCEO --30 V

Emitter-to-Base Voltage VEBO --5 V

Collector Current IC--700 mA

Collector Current (Pulse) ICP --1.4 A

Collector Dissipation PC400 mW

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions min typ max Unit

Collector Cutoff Current ICBO VCB=--30V, IE=0 --100 nA

Emitter Cutoff Current IEBO VEB=--4V, IC=0 --100 nA

DC Current Gain hFE VCE=--2V, IC=--10mA 200 500

Gain-Bandwidth Product fTVCE=--10V, IC=--50mA 520 MHz

Marking : XM Continued on next page.

Ordering number : ENN7361A

30A02SP

91003 TS IM TA-100699 / 32603 TS IM TA-100380

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Low-Frequency

General-Purpose Amplifier Applications

Package Dimensions

unit : mm

2033A

[30A02SP]

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

1 : Emitter

2 : Collector

3 : Base

SANYO : SPA

4.0

0.4

0.5

0.4

0.6

15.0 3.0

1.8

123

2.2

0.4

1.3

3.0

3.8nom

0.7

30A02SP

No.7361-2/4

Continued from preceding page. Ratings

Parameter Symbol Conditions min typ max Unit

Output Capacitance Cob VCB=--10V, f=1MHz 4.7 pF

Collector-to-Emitter Saturation Voltage VCE(sat) IC=--200mA, IB=--10mA --110 --220 mV

Base-to-Emitter Saturation Voltage VBE(sat) IC=--200mA, IB=--10mA --0.9 --1.2 V

Collector-to-Base Breakdown Voltage V(BR)CBO IC=--10µA, IE=0 --30 V

Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--1mA, RBE=∞--30 V

Emitter-to-Base Breakdown Voltage V(BR)EBO IE=--10µA, IC=0 --5 V

Turn-ON Delay Time ton See specified Test Circuit. 35 ns

Rise T ime tstg See specified Test Circuit. 125 ns

Turn-OFF Delay Time tfSee specified Test Circuit. 25 ns

Switching Time Test Circuit

VRRB

VCC= --12VVBE=5V

50Ω

INPUT

OUTPUT

220µF 470µF

PW=20µsIB1

D.C.≤1% IB2

IC=20IB1= --20IB2= --300mA

--200

--100

IC -- VCE

IT05049

IT05051

IT05050

--400

--300

--600

--500

--700

--200 --600--400 --800 --1000

--100 --500--300 --700 --900 0

IC -- VBE

--0.2 --0.4 --0.6 --0.8 --1.0 --1.2

--200

--800

--500

--700

--400

--300

--600

--100

100

hFE -- IC

--1.0 2357--10 23572357

--100 --1000

1000

IB=0

Ta=75°C

25°C

--25°C

--500µA

--1mA

--2mA

--5mA

--3mA

--7mA

--10mA

--15mA

--40mA

--50mA

--30mA

--20mA

--25mA

VCE= --2V

Ta=75°C

25°C

--25°C

IT05054

--1.0

VCE(sat) -- IC

23 57

--10 23 57 23 57

--100 --1000

--1000

--100

--10

Ta=75°C

--25°C

25°C

IC / IB=20

Collector-to-Emitter Voltage, VCE -- mV

Collector Current, IC -- mA

Base-to-Emitter Voltage, VBE -- V

Collector Current, IC -- mA

DC Current Gain, hFE

Collector Current, IC -- mA

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- mV

30A02SP

No.7361-3/4

IT05053

--1.0

0.1

Cob -- VCB

--10

2357235

f=1MHz

IT05055

VCE(sat) -- IC

--1.0 23 57

--10 23 57 23 57

--100 --1000

IT05056

VBE(sat) -- IC

--1.0

--10

--0.1

Ta= --25°C

75°C

25°C

--1.0 23 57

--10 23 57 23 57

--100 --1000

--10

--1000

--100

Ta=75°C

--25°C

25°C

IT05052

--1.0

fT -- IC

23 57 23 57 23 57

--10 --100 --1000

100

1000

VCE= --10V

IC / IB=50 IC / IB=20

Collector Current, IC -- mA

Gain-Bandwidth Product, fT -- MHz

Collector-to-Base Voltage, VCB -- V

Output Capacitance, Cob -- pF

Collector Current, IC -- mA

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- mV

Collector Current, IC -- mA

Base-to-Emitter

Saturation Voltage, VBE(sat) -- VCollector Dissipation, PC -- mW

Ambient Temperature, Ta -- °C

PC -- Ta

100

IT05048

200

400

300

500

4020 100 12060 80 140 160

f=1MHz

--0.1

0.1

Ron -- IB

IT06403

1.0

100

32 57 32 57

--1.0 --10

OUT

IN 1kΩ

1kΩ

Base Current, IB -- mA

ON Resistance, Ron -- Ω

30A02SP

No.7361-4/4

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be expor ted without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of September 2003. Specifications and information herein are subject

to change without notice.