FCPF13N60NT - Fairchild

August 2009

FCP13N60N / FCPF13N60NT N-Channel MOSFET

FCP13N60N / FCPF13N60NT Rev. A

www.fairchildsemi.com1

SupreMOS

TM

FCP13N60N / FCPF13N60NT

N-Channel MOSFET

600V, 13A, 0.258Ω

Features

•R

DS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A

• Ultra Low Gate Charge ( Typ.Qg = 30.4nC)

• Low Effective Output Capacitance

• 100% Avalanche Tested

• RoHS Compliant

Description

The SupreMOS MOSFET, Fairchild’s next generation of high

voltage super-junction MOSFETs, employs a deep trench filling

process that differentiates it from preceding multi-epi based

technologies. By utilizing this advanced technology and precise

process control, SupreMOS provides world class Rsp, superior

switching performance and ruggedness.

This SupreMOS MOSFET fits the industry’s AC-DC SMPS

requirements for PFC, server/telecom power, FPD TV power, ATX

power, and industrial power applications.

D

G

S

TO-220F

FCPF Series

G S

D

TO-220

FCP Series

G D S

MOSFET Maximum Ratings TC = 25oC unless otherwise noted

Thermal Characteristics

Symbol Parameter FCP13N60N FCPF13N60NT Units

VDSS Drain to Source Voltage 600 V

VGSS Gate to Source Voltage ±30 V

IDDrain Current -Continuous (TC = 25oC) 13 13* A

-Continuous (TC = 100oC) 8.2 8.2*

IDM Drain Current - Pulsed (Note 1) 39 39 A

EAS Single Pulsed Avalanche Energy (Note 2) 235 mJ

IAR Avalanche Current 4.3 A

EAR Repetitive Avalanche Energy 1.16 mJ

dv/dt MOSFET dv/dt Ruggedness 100 V/ns

Peak Diode Recovery dv/dt (Note 3) 20 V/ns

PDPower Dissipation (TC = 25oC) 116 33.8 W

- Derate above 25oC 0.93 0.27 W/oC

TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC

TL

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds 300 oC

Symbol Parameter FCP13N60N FCPF13N60NT Units

RθJC Thermal Resistance, Junction to Case 1.07 3.7

oC/WRθCS Thermal Resistance, Case to Heak Sink ( Typical) 0.5 0.5

RθJA Thermal Resistance, Junction to Ambient 62.5 62.5

*Drain current limited by maximum junction temperature

FCP13N60N / FCPF13N60NT N-Channel MOSFET

FCP13N60N / FCPF13N60NT Rev. A www.fairchildsemi.com

2

Package Marking and Ordering Information

Electrical Characteristics TC = 25oC unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking Device Package Reel Size Tape Width Quantity

FCP13N60N FCP13N60N TO-220 - - 50

FCPF13N60NT FCPF13N60NT TO-220F - - 50

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V, TC = 25oC 600 - - V

ΔBVDSS

ΔTJ

Breakdown Voltage Temperature

Coefficient ID = 1mA, Referenced to 25oC - 0.73 - V/oC

IDSS Zero Gate Voltage Drain Current VDS = 480V, VGS = 0V - - 10 μA

VDS = 480V, VGS = 0V, TC = 125oC - - 100

IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 nA

VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA2.0-4.0V

RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 6.5A - 0.244 0.258 Ω

gFS Forward Transconductance VDS = 40V, ID = 6.5A - 16.3 - S

Ciss Input Capacitance VDS = 100V, VGS = 0V

f = 1MHz

- 1325 1765 pF

Coss Output Capacitance - 50 65 pF

Crss Reverse Transfer Capacitance - 3 5 pF

Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 30 - pF

Cosseff Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 145 - pF

Qg(tot) Total Gate Charge at 10V VDS = 380V,ID = 6.5A

VGS = 10V

(Note 4)

- 30.4 39.5 nC

Qgs Gate to Source Gate Charge - 6.0 - nC

Qgd Gate to Drain “Miller” Charge - 9.5 - nC

ESR Equivalent Series Resistance (G-S) Drain Open - 2.8 - Ω

td(on) Turn-On Delay Time

VDD = 380V, ID = 6.5A

RG = 4.7Ω

(Note 4)

-14.539ns

trTurn-On Rise Time - 10.6 31.2 ns

td(off) Turn-Off Delay Time - 45 100 ns

tfTurn-Off Fall Time - 9.8 29.6 ns

ISMaximum Continuous Drain to Source Diode Forward Current - - 13 A

ISM Maximum Pulsed Drain to Source Diode Forward Current - - 39 A

VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 6.5A - - 1.2 V

trr Reverse Recovery Time VGS = 0V, ISD = 6.5A

dIF/dt = 100A/μs

- 287 - ns

Qrr Reverse Recovery Charge - 3.5 - μC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 4.3A, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 13A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Essentially Independent of Operating Temperature Typical Characteristics

FCP13N60N / FCPF13N60NT N-Channel MOSFET

FCP13N60N / FCPF13N60NT Rev. A www.fairchildsemi.com

3

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

2468

0.2

1

10

60

-55oC

150oC

*Notes:

1. VDS = 20V

2. 250μs Pulse Test

25oC

ID, Drain Current[A]

VGS, Gate-Source Voltage[V]

0.6 1 10 20

3

10

40

*Notes:

1. 250μs Pulse Test

2. TC = 25oC

VGS = 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V

ID, Drain Current[A]

VDS, Drain-Source Voltage[V]

0 10203040

0.0

0.2

0.4

0.6

0.8

*Notes: TC = 25oC

VGS = 20V

VGS = 10V

RDS(ON) [Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0.4 0.8 1.2 1.6

1

10

100

*Notes:

1. VGS = 0V

2. 250μs Pulse Test

150oC

IS, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

010203040

0

2

4

6

8

10

*Notes: ID = 6.5A

VDS = 120V

VDS = 380V

VDS = 480V

VGS, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

0.1 1 10 100 600

1

10

100

1000

10000

50000

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

*Notes:

1. VGS = 0V

2. f = 1MHz

Crss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

FCP13N60N / FCPF13N60NT N-Channel MOSFET

FCP13N60N / FCPF13N60NT Rev. A www.fairchildsemi.com

4

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area

Figure 11. Maximum Drain Current

vs. Case Temperature

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

*Notes:

1. VGS = 0V

2. ID = 1mA

BVDSS, [Normalized]

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

*Notes:

1. VGS = 10V

2. ID = 6.5A

RDS(on), [Normalized]

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

0.1 1 10 100 1000

0.01

0.1

1

10

100

10μs

100μs

1ms

10ms

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

Operation in This Area

is Limited by R DS(on)

*Notes:

1. TC = 25oC

2. TJ = 150oC

3. Single Pulse

DC

0.1 1 10 100 1000

0.01

0.1

1

10

100

10μs

100μs

1ms

10ms

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

Operation in This Area

is Limited by R DS(on)

*Notes:

1. TC = 25oC

2. TJ = 150oC

3. Single Pulse

DC

25 50 75 100 125 150

0

3

6

9

12

15

ID, Drain Current [A]

TC, Case Temperature [oC]

_ FCP13N60N _ FCPF13N60NT

FCP13N60N / FCPF13N60NT N-Channel MOSFET

FCP13N60N / FCPF13N60NT Rev. A www.fairchildsemi.com

5

Typical Performance Characteristics (Continued)

Figure 12. Transient Thermal Response Curve

Figure 13. Transient Thermal Response Curve

t

1

P

DM

t

2

_ FCP13N60N

10-5 10-4 10-3 10-2 10-1

0.01

0.1

1

2

0.01

0.1

0.2

0.05

0.02 *Notes:

1. ZθJC(t) = 1.07oC/W Max.

2. Duty Factor, D= t1/t2

3. TJM - TC = PDM * ZθJC(t)

0.5

Single pulse

Thermal Response [ZθJC]

Rectangular Pulse Duration [sec]

t

1

P

DM

t

2

10-5 10-4 10-3 10-2 10-1 100101102

0.01

0.1

1

5

0.01

0.1

0.2

0.05

0.02

*Notes:

1. ZθJC(t) = 3.7oC/W Max.

2. Duty Factor, D= t1/t2

3. TJM - TC = PDM * ZθJC(t)

0.5

Single pulse

Thermal Response [ZθJC]

Rectangular Pulse Duration [sec]

t

1

P

DM

t

2

_ FCPF13N60NT

FCP13N60N / FCPF13N60NT N-Channel MOSFET

FCP13N60N / FCPF13N60NT Rev. A www.fairchildsemi.com

6

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FCP13N60N / FCPF13N60NT N-Channel MOSFET

FCP13N60N / FCPF13N60NT Rev. A www.fairchildsemi.com

7

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

Driver

RG

Sam e Type

as D U T

VGS

• dv/dt controlled by R

G

•I

SD

controlled by pulse period

VDD

L

ISD

10V

VGS

( D riv e r )

ISD

( D U T )

VDS

( DUT )

VDD

Body D iode

Forw ard Volta

g

e D ro

p

VSD

I

FM

, Body D iode Forw ard C urrent

Body D iode R everse C urrent

IRM

Body D iode R ecovery dv/dt

di/dt

D = G ate P ulse W idth

Gate Pulse Period

--------------------------

DUT

VDS

+

_

Driver

RG

Sam e Type

as D U T

VGS

• dv/dt controlled by R

G

•I

SD

controlled by pulse period

VDD

LL

ISD

10V

VGS

( D riv e r )

ISD

( D U T )

VDS

( DUT )

VDD

Body D iode

Forw ard Volta

g

e D ro

p

VSD

I

FM

, Body D iode Forw ard C urrent

Body D iode R everse C urrent

IRM

Body D iode R ecovery dv/dt

di/dt

D = G ate P ulse W idth

Gate Pulse Period

--------------------------

D = G ate P ulse W idth

Gate Pulse Period

--------------------------

FCP13N60N / FCPF13N60NT N-Channel MOSFET

FCP13N60N / FCPF13N60NT Rev. A www.fairchildsemi.com

8

Mechanical Dimensions

TO-220

Dimensions in Millimeters

FCP13N60N / FCPF13N60NT N-Channel MOSFET

FCP13N60N / FCPF13N60NT Rev. A www.fairchildsemi.com

9

Mechanical Dimensions

TO-220F

Dimensions in Millimeters

FCP13N60N / FCPF13N60NT N-Channel MOSFET

FCP13N60N / FCPF13N60NT Rev. A www.fairchildsemi.com10

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Definition of Terms

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™*

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™

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®*

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tm

®

tm

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Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

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date. Fairchild Semiconductor reserves the right to make changes at any time without

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make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild

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Rev. I41