MCC26-08IO1B - Zilog - Pdf.Support

MCC26-08io1B

Phase leg

Thyristor Module

3 1 2

6 57 4

Part number

MCC26-08io1B

Backside: isolated

TAV

T

VV1.27

RRM

27

800

=

V= V

I= A

2x

Features / Ad vantages: Applications: Package:

● Thyristor for line frequency

● Planar passivated chip

● Long-term stability

● Direct Copper Bonded Al2O3-ceramic

● Line rectifying 50/60 Hz

● Softstart AC motor control

● DC Motor control

● Power converter

● AC power control

● Lighting and temperature control

TO-240AA

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Base plate: DCB ceramic

● Reduced weight

● Advanced power cycling

● Isolation Voltage: V~

3600

IXYS reserves the right to change limits, conditions and dimensions. 20130606aData according to IEC 60747and per semiconductor unless otherwise specified

MCC26-08io1B

V = V

A²s

kA²s

Symbol Definition

Ratings

typ. max.

I

V

IA

V

T

1.27

R0.88 K/W

min.

27

VV

100T = 25°C

VJ

T = °C

VJ

mA3V = V

T = 25°C

VJ

I = A

T

V

T = °C

C

85

P

tot

115 WT = 25°C

C

40

800

forward voltage drop

total power dissipation

Conditions Unit

1.64

T = 25°C

VJ

125

V

T0

V0.85T = °C

VJ

125

r

T

11 mΩ

V1.27T = °C

VJ

I = A

T

V

40

1.65

I = A80

threshold voltage

slope resistance for power loss calculation only

µA

125

VV800T = 25°C

VJ

IA50

P

GM

Wt = 30 µs 10

max. gate power dissipation

P

T = °C

C

125

Wt = 5

P

GAV

W0.5

average gate power dissipation

C

J

22

j

unction capacitance V = V400 T = 25°Cf = 1 MHz

RVJ

pF

I

TSM

t = 10 ms; (50 Hz), sine T = 45°C

VJ

max. forward surge current

T = °C

VJ

125

I²t T = 45°C

value for fusing

T = °C125

V = 0 V

R

V = 0 V

R

V = 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

thJC

thermal resistance junction to case

T = °C

VJ

125

520

560

970

940

A

440

475

1.35

1.31

800

300 µs

RMS forward current

T(RMS)

TAV

180° sine

average forward current

(di/dt)

cr

A/µs

150repetitive, I =T

VJ

= 125°C; f = 50 Hz

critical rate of rise of current

V

GT

gate trigger voltage V= 6 V T = °C25

(dv/dt) T=125°C

critical rate of rise of voltage

A/µs500

V/µs

t = µs;

IA;V = ⅔ V

R = ∞; method 1 (linear voltage rise)

VJ

DVJ

45 A

T

P

G

=0.45

di /dt A/µs;

G

=0.45

DDRM

cr

V = ⅔ V

D DRM

GK

1000

1.5 V

T= °C-40

VJ

I

GT

gate trigger current V= 6 V T = °C25

DVJ

100 mA

T= °C-40

VJ

1.6 V

200 mA

V

GD

gate non-trigger voltage T= °C

VJ

0.2 V

I

GD

gate non-trigger current 10 mA

V = ⅔ V

D DRM

125

latching current T= °C

VJ

450 mAI

L

25tµs

p

=10

IA;

G

= 0.45 di /dt A/µs

G

=0.45

holding current T= °C

VJ

200 mAI

H

25V= 6 V

D

R = ∞

GK

gate controlled delay tim e T= °C

VJ

2µst

gd

25

IA;

G

= 0.45 di /dt A/µs

G

=0.45

V = ½ V

D DRM

turn-off time T= °C

VJ

150 µst

q

di/dt = A/µs;10 dv/dt = V/µs;20

V =

R

100 V; I A;

T

=20 V = ⅔ V

D DRM

tµs

p

= 200

non-repet., I = 27 A

T

125

R

thCH

thermal resistance case to heatsink K/W

Thyristor

900

RRM/DRM

RSM/DSM

max. non-repetitive reverse/forward blocking voltage

max. re pe titive reverse/forward bl ocking volt a ge

R/D

reverse current, drain current

T

R/D

200

0.20

IXYS reserves the right to change limits, conditions and dimensions. 20130606aData according to IEC 60747and per semiconductor unless otherwise specified

MCC26-08io1B

Ratings

MCMA50P1200TA TO-240AA-1B 1200

Package

T

VJ

°C

M

D

Nm4

mounting torque 2.5

T

stg

°C125

storage temperature -40

Weight g90

Symbol Definition typ. max.min.Conditions

virt ua l j un ctio n temp eratu re

Unit

M

T

Nm4

terminal torque 2.5

VV

t = 1 second

V

t = 1 minute

isolation voltage

mm

13.0 9.7

16.0 16.0

d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current 200 A

per terminal

125-40

terminal to terminal

TO-240AA

Similar Part Package Voltage class

MCMA35P1200TA TO-240AA-1B 1200

Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering

50/60 Hz, RMS; I ≤ 1 mA

ISOL

MCC26-08io1B 452785Box 6MCC26-08io1BStandard

3000

3600

ISOL

threshold voltage V0.85

mΩ

V

0 max

R

0 max

slope resistance * 9.8

Equivalent Circuits for Simulation

T =

VJ

IV

0

R

0

Thyristor

125 °C

* on die level

IXYS reserves the right to change limits, conditions and dimensions. 20130606aData according to IEC 60747and per semiconductor unless otherwise specified

MCC26-08io1B

3 1 2

6 57 4

Outlines TO-240AA

IXYS reserves the right to change limits, conditions and dimensions. 20130606aData according to IEC 60747and per semiconductor unless otherwise specified

MCC26-08io1B

t [s]

I

TSM

[A]

Fig. 1 Surge overload current

I

TSM

: Crest value, t: duration

10

-3

10

-2

10

-1

10

0

10

1

800

600

400

200

0

T

VJ

= 45°C

T

VJ

= 125°C

50 HZ, 80% V

RRM

t [ms]

I

2

t

[A

2

s]

Fig. 2 I

2

t versus time (1-10 ms)

V

R

= 0 V

T

VJ

= 45°C

T

VJ

= 125°C

10

2

10

4

10

3

1236810

I

TAVM

[A]

T

C

[°C]

Fig. 3 Max. forward current

at case temperature

60

40

30

20

10

0

50

0 50 100 150

DC

180° sin

120°

60°

30°

DC

180° sin

120°

60°

30°

R

thJA

[KW]

1.5

2

2.5

3

4

5

6

8

Fig. 4 Power dissipation versus onstate current & ambient temp. (per thyristor)

P

T

[W]

T

A

[°C]I

TAVM

[A]

010203040 0 50 100 15050

80

60

40

20

0

Fig. 6 Three phase rectifier bridge: Power dissipation versus direct

output current and ambient temperature

P

tot

[W]

I

dAVM

[A] T

A

[°C]

Circuit

B6

3x MCC26 or

3x MCD26

R

thJA

[KW]

0.1

0.15

0.2

0.25

0.3

0.4

0.5

0.6

0 20 40 60 0 50 100 15080

100

200

300

400

0

I

G

[mA]

V

G

[V]

Fig. 5 Gate trigger charact.

10

0

10

1

10

2

10

3

10

4

0.1

1

10

1: IGT,T

VJ =125°C

2: IGT,T

VJ =25°C

3: IGT,T

VJ =-40°C

4: PGAV =0.5W

5: PGM =5W

6: PGM =10W

IGD,T

VJ =125°C

3

4

2

156

10 100 1000

1

10

100

1000

Limit

typ.

T

VJ

=25°C

I

G

[mA]

t

gd

[µs]

Fig. 7 Gate trigger delay time

Thyristor

IXYS reserves the right to change limits, conditions and dimensions. 20130606aData according to IEC 60747and per semiconductor unless otherwise specified

MCC26-08io1B

Ptot

[W]

IRMS [A]

Circuit

W3

3x MCC26 or

3x MCD26

R

thJA

[KW]

0.1

0.15

0.2

0.25

0.3

0.4

0.5

0.6

TA [°C]

Fig. 8 Three phase AC-controller: Power dissipation vs. RMS output current

and ambient temperature

400

300

200

100

0 20 40 60 0 50 100 150

Fig. 9 Transient thermal impedance junction to case (per thyristor)

t [s]

ZthJC

[K/W]

30°

60°

120°

180°

DC

1.2

0.8

0.4

0

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

0.2

0.6

1.0

30°

60°

120°

180°

DC

ZthJK

[K/W]

Fig. 10 Transient thermal impedance junction to heatsink (per thyristor)

t [s]

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

1.5

1.0

0.5

0

RthJC for various conduction angles d:

dR

thJC [K/W]

DC 0.88

180° 0.92

120° 0.95

60° 0.98

30° 1.01

Constants for ZthJC calculation:

iR

thi [K/W] ti [s]

1 0.019 0.0031

2 0.029 0.0216

3 0.832 0.1910

RthJK for various conduction angles d:

dR

thJC [K/W]

DC 1.08

180° 1.12

120° 1.15

60° 1.18

30° 1.21

Constants for ZthJC calculation:

iR

thi [K/W] ti [s]

1 0.019 0.0031

2 0.029 0.0216

3 0.832 0.1910

4 0.200 0.4500

Thyristor

IXYS reserves the right to change limits, conditions and dimensions. 20130606aData according to IEC 60747and per semiconductor unless otherwise specified