BFR90
BRF90G
Advanced Power Technology reserves the ri ght to change, without notice,
the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
*G Denotes RoHS Compliant, Pb Free Terminal Finish
DESCRIPTION: De signed primarily for use in high-ga in, low n oise, small-signal amplifiers. Also used in
application s req uiring fast switching times .
ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C)
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 15 Vdc
VCBO Co lle ctor-Base Voltage 20 Vdc
VEBO Emitter-Base Voltage 3.0 Vdc
ICColl ector Current 30 mA
Thermal Data
PDTotal Device Dissipation @ TA = 60ºC
Derat e above 60ºC 180
2.0 mWatts
mW/ ºC
Macro T
(STYLE #2)
Features
•High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA
•Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 G Hz
•High Power Gain – Gmax = 18dB (typ) @ f = 0.5 GHz
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE , PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
BFR90
BRF90G
Advanced Power Technology reserves the ri ght to change, without notice,
the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol Test Conditions Value
Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0) 15 - - Vdc
BVCB0 Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0) 20 - - Vdc
BVEBO Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0) 3.0 - - Vdc
ICBO Collector Cutoff Current
(VCB = 10 Vdc, VBE = 0 Vdc) - - 50 nA
(on)HFE DC Current Gain
(IC = 14 mAdc, VCE = 10 Vdc) 25 -250 -
DYNAMIC
Symbol Test Conditions Value
Min. Typ. Max. Unit
Ftau Current-Gain – Bandwidth Product
(IC = 14 m A, VCE = 10 Vdc, f = 0.5 GHz) -5.0 - GHz
CCB Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) -0.5 1.0 pF
BFR90
BRF90G
Advanced Power Technology reserves the ri ght to change, without notice,
the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
FUNCTIONAL
Symbol Test Conditions Value
Min. Typ. Max. Unit
NF Noise Figure
(IC = 2.0 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
(IC = 2.0 mAdc, VCE = 10 Vdc, f = 1.0 GHz) -
-2.4
3.0 -
-dB
GNF Power Gain at Optimum Noise Figu re
(IC = 2.0 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
(IC = 2.0 mAdc, VCE = 10 Vdc, f = 1.0 GHz) -
-15
10 -
-dB
|S21|2Inse rtion Gain
(IC = 14 m Adc, VCE = 10 Vdc, f = 0.5 GHz)
(IC = 14 m Adc, VCE = 10 Vdc, f = 1.0 GHz) 15 16
11 -dB
MSG Maximum Stable Gain
(IC = 14 m Adc, VCE = 10 Vdc, f = 0.5 GHz)
(IC = 14 m Adc, VCE = 10 Vdc, f = 1.0 GHz) -20
15 -dB
GU max Maximum Unilate ral Gain (1)
(IC = 14 m Adc, VCE = 10 Vdc, f = 0.5 GHz)
(IC = 14 m Adc, VCE = 10 Vdc, f = 1.0 GHz) -18
12.5 -dB
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 14 mA
f
S11
S21
S12
S22
(MHz) |S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ
100 0.382 -41 21.21 141 0.016 79 0.718 -9
200 0.282 -77 14.85 116 0.028 74 0.662 -18
300 0.217 -101 10.71 104 0.039 74 0.599 -20
500 0.162 -131 6.78 91 0.061 76 0.558 -24
700 0.140 -151 4.98 83 0.082 76 0.55 -28
800 0.135 -159 4.42 80 0.093 76 0.552 -29
1000 0.124 -176 3.59 74 0.117 75 0.553 -33
BFR90
BRF90G
Advanced Power Technology reserves the ri ght to change, without notice,
the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
Macro X
Power Macro
Macro T SO-8
Efficiency (%)
GPE Freq (MHz)
Freq (MHz)
Gu Max (dB)
IC max (mA)
Device
IC max (mA)
RF (Low Power PA / General Purpose) Selection Guide
MA CRO X MRF559 NPN 870 0.5 6.5 70 7.5 16 150
MA CRO X MRF559 NPN 870 0.5 9.5 65 12.5 16 150
SO-8 MRF8372,R1,R2 NPN 870 0.75 855 12.5 16 200
POWER MACRO MRF557 NPN 870 1.5 855 12.5 16 400
POWER MACRO MRF557T NPN 870 1.5 855 12.5 16 400
MA CRO X MRF559 NPN 512 0.5 10 65 7.5 16 150
MA CRO X MRF559 NPN 512 0.5 13 60 12.5 16 150
TO-39 2N3866A NPN 400 1 10 45 28 30 400
SO- 8 MRF3866, R1, R2 NPN 400 1 10 45 28 30 400
POWER MA CRO MRF555 NPN 470 1.5 11 50 12.5 16 400
POWER MA CRO MRF555T NPN 470 1.5 11 50 12.5 16 400
SO-8 MRF4427, R2 NPN 175 0.15 18 60 12 20 400
TO-39 2N4427 NPN 175 110 50 12 20 400
POWER MACRO MRF553 NPN 175 1.5 11.5 60 12.5 16 500
POWER MACRO MRF553T NPN 175 1.5 11.5 50 12.5 16 500
TO-39 MRF607 NPN 175 1.75 11.5 50 12.5 16 330
TO-39 2N6255 NPN 175 37.8 50 12.5 18 1000
TO-72 2N5179 NPN 200 20 612 50
Pout (watts)
GPE (dB)
GPE VCC
BVCEO
Type
Package
Device
Type
NF (dB)
NF IC (mA)
NF VCE
GN (dB)
Ftau (MHz)
Ccb(pF)
BVCEO
TO-39 2N5109 NPN 200 3 10 15 12 1200 3.5 20 400
TO-39 MRF5943C NPN 200 3.4 30 15 11.4 1000 30 400
SO-8 MRF5943, R1, R2 NPN 200 3.4 30 15 15 1300 30 400
TO-72 2N5179 NPN 200 4.5 1.5 6 17 900 1 12 50
TO-72 2N2857 NPN 300 5.5 50 6 13 1600 1 15 40
TO-39 MRF517 NPN 300 7.5 50 15 5.5 4600 3 25 150
TO-72 MRF904 NPN 450 1.5 5 6 11 4000 1 15 30
TO-72 2N6304 NPN 450 5 2 5 14 1400 1 15 50
MACRO T BFR91 NPN 500 1.9 2 5 11 16.5 5000 1 12 35
MACRO T BFR96 NPN 500 2 10 10 14.5 500 2.6 15 100
SO-8 MRF5812, R1, R2 NPN 500 2 50 10 15.5 17.8 5000 15 200
MACRO X MRF581A NPN 500 2 50 10 14 15 5000 15 200
Macro BFR90 NPN 500 2.4 2 10 15 18 5000 1 15 30
TO-72 BFY90 NPN 500 2.5 2 5 20 1300 15 50
TO-72 MRF914 NPN 500 2.5 5 10 15 4500 12 40
MACRO X MRF581 NPN 500 2.5 50 10 15 17.8 5000 16 200
TO-39 MRF586 NPN 500 3 90 15 11 14.5 4500 2.2 17 200
MACRO X MRF951 NPN 1000 1.3 5 6 14 17 8000 0.45 10 100
MA CRO X MRF571 NPN 1000 1.5 10 6 10 8000 1 10 70
MA CRO T BFR91 NPN 1000 2.5 2 5 8 11 500 0 1 12 35
MACRO T BFR90 NPN 1000 3 2 10 10 12.5 5000 1 15 30
TO-39 MRF545 PNP 14 1400 270 400
TO-39 MRF544
NPN
13.5 1500 70 400
RF (LNA / General Purpose) Selec tion Guide
1
3
1
2
1
2
3
4
1
4
5
RF Low Power PA, LNA, and General Purpose Discrete Selector Guide
Low Co st RF Plastic Package Options
BFR90
BRF90G
Advanced Power Technology reserves the ri ght to change, without notice,
the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005
1.
2.
3.
PIN 1. COLLECTOR
2. EMITTER
3. BASE