© 2000 IXYS All rights reserved 1 - 2
VRSM V(BR)min
ÿ
①VRRM Anode Cathode
V V V on stud on stud
900 - 800 DS 17-08A DSI 17-08A
1300 - 1200 DS 17-12A DSI 17-12A
1300 1300 1200 DSA 17-12A DSAI 17-12A
1700 1750 1600 DSA 17-16A DSAI 17-16A
1900 1950 1800 DSA 17-18A DSAI 17-18A
① Only for Avalanche Diodes
Symbol Test Conditions Maximum Ratings
IF(RMS) TVJ = TVJM 40 A
IF(AV)M Tcase = 125°C; 180° sine 25 A
PRSM DSA(I) types, TVJ = TVJM, tp = 10 ms7kW
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 370 A
VR= 0 t = 8.3 ms (60 Hz), sine 400 A
TVJ = TVJM t = 10 ms (50 Hz), sine 300 A
VR= 0 t = 8.3 ms (60 Hz), sine 320 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 680 A2s
VR= 0 t = 8.3 ms (60 Hz), sine 660 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 450 A2s
VR= 0 t = 8.3 ms (60 Hz), sine 430 A2s
TVJ -40...+180 °C
TVJM 180 °C
Tstg -40...+180 °C
MdMounting torque 2.2-2.8 Nm
19-25 lb.in.
Weight 6g
VRRM = 800-1800 V
IF(RMS)= 40 A
IF(AV)M = 25 A
Features
●International standard package,
JEDEC DO-203 AA (DO-4)
●Planar glassivated chips
Applications
●Supplies for DC power equipment
●DC supply for PWM inverter
●Field supply for DC motors
●Battery DC power supplies
Advantages
●Space and weight savings
●Simple mounting
●Improved temperature and power
cycling
●Reduced protection circuits
Symbol Test Conditions Characteristic Values
IRTVJ = TVJM; VR = VRRM £4mA
VFIF= 55 A; TVJ = 25°C£1.36 V
VT0 For power-loss calculations only 0.85 V
rTTVJ = TVJM 8mW
RthJC DC current 1.5 K/W
RthJH DC current 2.1 K/W
dSCreepage distance on surface 2.05 mm
dAStrike distance through air 2.05 mm
aMax. allowable acceleration 100 m/s2
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
DS 17 DSI 17
DSA 17 DSAI 17
Rectifier Diode
A valanche Diode
A = Anode C = Cathode
DO-203 AA
10-32UNF
DS DSI
DSA DSAI
C
A
A
C
© 2000 IXYS All rights reserved 2 - 2
10-3 10-2 10-1 100
0
100
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23456789110
200
400
600
800
100
1000
0.20.40.60.81.01.21.41.61.8
0
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40
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0 1020304050
0
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0 50 100 150 200
0
10-3 10-2 10-1 100101102
0
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2
I2t
IFSM
A
IF
A
VFtstms
PF
W
IF(AV)M
ATamb
°C
ts
ZthJH
K/W
A2s
0 50 100 150
0
10
20
30
40
IF(AV)M
Tc
A
°C
V
DS 17 DSI 17
DSA 17 DSAI 17
Fig. 6 Transient thermal impedance junction to heatsink
Fig. 1 Forward characteristics Fig. 2 Surge overload current
IFSM: crest value, t: duration Fig. 3 I2t versus time (1-10 ms)
Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case
temperature 180° sine
RthJH for various conduction angles d:
dR
thJH (K/W)
DC 2.10
180°2.23
120°2.33
60°2.53
30°2.72
Constants for ZthJH calculation:
iR
thi (K/W) ti (s)
1 0.1006 0.0021
2 0.5311 0.0881
3 0.8683 2.968
4 0.600 3.20
typ. lim.
TVJ= 180°C
TVJ= 25°C
TVJ = 180°C
TVJ = 45°C
VR = 0 V
RthJA :
2.8 K/W
3.2 K/W
4,8 K/W
6.3 K/W
8.5 K/W
Cu 80x80
DC
180° sin
120°
60°
30°
50Hz, 80% VRRM
TVJ = 45°C
TVJ = 180°C
ase
