© Semiconductor Components Industries, LLC, 2012
March, 2014 − Rev. 14
1Publication Order Number:
MUN5311DW1T1/D
MUN5311DW1T1G,
SMUN5311DW1T1G,
NSVMUN5311DW1T1GSeries
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the
MUN5311DW1T1G series, two complementary BRT devices are
housed in the SOT−363 package which is ideal for low power surface
mount applications where board space is at a premium.
Features
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•Available in 8 mm, 7 inch/3000 Unit Tape and Reel
•S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for
Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOT−363
CASE 419B
STYLE 1
MARKING DIAGRAM
ORDERING AND DEVICE MARKING
INFORMATION
See detailed ordering, shipping, and specific marking
information in the table on page 2 of this data sheet.
Q1
R1
R2
R2
R1
Q2
(1)(2)(3)
(4) (5) (6)
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xx M G
G
1
6
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
xx = Device Code
M = Date Code*
G= Pb−Free Package
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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2
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
mW/°C
Thermal Resistance − Junction-to-Ambient RqJA 670 (Note 1)
490 (Note 2)
°C/W
Characteristic (Both Junctions Heated) Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
mW
mW/°C
Thermal Resistance − Junction-to-Ambient RqJA 493 (Note 1)
325 (Note 2)
°C/W
Thermal Resistance − Junction-to-Lead RqJL 188 (Note 1)
208 (Note 2)
°C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES
Device Package Marking R1 (K) R2 (K) Shipping†
MUN5311DW1T1G,
SMUN5311DW1T1G,
SMUN5311DW1T2G
SOT−363
(Pb−Free) 11 10 10 3,000 / Tape & Reel
MUN5312DW1T1G,
SMUN5312DW1T1G
SOT−363
(Pb−Free) 12 22 22 3,000 / Tape & Reel
MUN5313DW1T1G,
SMUN5313DW1T1G
SOT−363
(Pb−Free) 13 47 47 3,000 / Tape & Reel
MUN5314DW1T1G,
SMUN5314DW1T1G
SOT−363
(Pb−Free) 14 10 47 3,000 / Tape & Reel
MUN5315DW1T1G,
SMUN5315DW1T1G
SOT−363
(Pb−Free) 15 10 ∞3,000 / Tape & Reel
MUN5316DW1T1G SOT−363
(Pb−Free) 16 4.7 ∞3,000 / Tape & Reel
MUN5330DW1T1G,
SMUN5330DW1T1G
SOT−363
(Pb−Free) 30 1.0 1.0 3,000 / Tape & Reel
MUN5331DW1T1G SOT−363
(Pb−Free) 31 2.2 2.2 3,000 / Tape & Reel
MUN5332DW1T1G,
NSVMUN5332DW1T1G
SOT−363
(Pb−Free) 32 4.7 4.7 3,000 / Tape & Reel
MUN5333DW1T1G,
NSVMUN5333DW1T1G
SOT−363
(Pb−Free) 33 4.7 47 3,000 / Tape & Reel
MUN5334DW1T1G,
NSVMUN5334DW1T1G
SOT−363
(Pb−Free) 34 22 47 3,000 / Tape & Reel
MUN5335DW1T1G,
SMUN5335DW1T1G,
SMUN5335DW1T2G
SOT−363
(Pb−Free) 35 2.2 47 3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
− − 100
nAdc
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
− − 500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MUN5311DW1T1G, SMUN5311DW1T1G
MUN5312DW1T1G, SMUN5312DW1T1G
MUN5313DW1T1G, SMUN5313DW1T1G
MUN5314DW1T1G, SMUN5314DW1T1G
MUN5315DW1T1G, SMUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1G, SMUN5330DW1T1G
MUN5331DW1T1G
MUN5332DW1T1G, NSVMUN5332DW1T1G
MUN5333DW1T1G, NSVMUN5333DW1T1G
MUN5334DW1T1G, NSVMUN5334DW1T1G
MUN5335DW1T1G, SMUN5335DW1T1G
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
mAdc
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO 50 − −
Vdc
Collector-Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO 50 − −
Vdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5311DW1T1G, SMUN5311DW1T1G
MUN5312DW1T1G, SMUN5312DW1T1G
MUN5313DW1T1G, SMUN5313DW1T1G
MUN5314DW1T1G, SMUN5314DW1T1G
MUN5315DW1T1G, SMUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1G, SMUN5330DW1T1G
MUN5331DW1T1G
MUN5332DW1T1G, NSVMUN5332DW1T1G
MUN5333DW1T1G, NSVMUN5333DW1T1G
MUN5334DW1T1G, NSVMUN5334DW1T1G
MUN5335DW1T1G, SMUN5335DW1T1G
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
−
−
−
−
−
−
−
−
−
−
−
−
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
MUN5311DW1T1G, SMUN5311DW1T1G
MUN5312DW1T1G, SMUN5312DW1T1G
MUN5313DW1T1G, SMUN5313DW1T1G
MUN5314DW1T1G, SMUN5314DW1T1G
MUN5335DW1T1G, SMUN5335DW1T1G
(IC = 10 mA, IB = 5 mA)
MUN5330DW1T1G, SMUN5330DW1T1G
MUN5331DW1T1G
(IC = 10 mA, IB = 1 mA)
MUN5315DW1T1G, SMUN5315DW1T1G
MUN5316DW1T1G
MUN5332DW1T1G, NSVMUN5332DW1T1G
MUN5333DW1T1G, NSVMUN5333DW1T1G
MUN5334DW1T1G, NSVMUN5334DW1T1G
VCE(sat)
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Vdc
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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Characteristic UnitMaxTypMinSymbol
ON CHARACTERISTICS (Note 3)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
MUN5311DW1T1G, SMUN5311DW1T1G
MUN5312DW1T1G, SMUN5312DW1T1G
MUN5314DW1T1G, SMUN5314DW1T1G
MUN5315DW1T1G, SMUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1G, SMUN5330DW1T1G
MUN5331DW1T1G
MUN5332DW1T1G, NSVMUN5332DW1T1G
MUN5333DW1T1G, NSVMUN5333DW1T1G
MUN5334DW1T1G, NSVMUN5334DW1T1G
MUN5335DW1T1G, SMUN5335DW1T1G
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
MUN5313DW1T1G, SMUN5313DW1T1G
VOL
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
MUN5311DW1T1G, SMUN5311DW1T1G
MUN5312DW1T1G, SMUN5312DW1T1G
MUN5313DW1T1G, SMUN5313DW1T1G
MUN5314DW1T1G, SMUN5314DW1T1G
MUN5333DW1T1G, NSVMUN5333DW1T1G
MUN5334DW1T1G, NSVMUN5334DW1T1G
MUN5335DW1T1G, SMUN5335DW1T1G
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
MUN5330DW1T1G, SMUN5330DW1T1G
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
MUN5315DW1T1G, SMUN5315DW1T1G
MUN5316DW1T1G
MUN5331DW1T1G
MUN5332DW1T1G, NSVMUN5332DW1T1G
VOH
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Vdc
Input Resistor
MUN5311DW1T1G, SMUN5311DW1T1G
MUN5312DW1T1G, SMUN5312DW1T1G
MUN5313DW1T1G, SMUN5313DW1T1G
MUN5314DW1T1G, SMUN5314DW1T1G
MUN5315DW1T1G, SMUN5315DW1T1G
MUN5316DW1T1G
MUN5330DW1T1G, SMUN5330DW1T1G
MUN5331DW1T1G
MUN5332DW1T1G, NSVMUN5332DW1T1G
MUN5333DW1T1G, NSVMUN5333DW1T1G
MUN5334DW1T1G, NSVMUN5334DW1T1G
MUN5335DW1T1G, SMUN5335DW1T1G
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
k W
Resistor Ratio
MUN5311DW1T1G/SMUN5311DW1T1G/MUN5312DW1T1G/
SMUN5312DW1T1G/MUN5313DW1T1G/SMUN5313DW1T1G
MUN5314DW1T1G/SMUN5314DW1T1G
MUN5315DW1T1G/SMUN5315DW1T1G/MUN5316DW1T1G
MUN5330DW1T1G/SMUN5330DW1T1G/MUN5331DW1T1G/
MUN5332DW1T1G/NSVMUN5332DW1T1G
MUN5333DW1T1G/NSVMUN5333DW1T1G
MUN5334DW1T1G/NSVMUN5334DW1T1G
MUN5335DW1T1G/SMUN5335DW1T1G
R1/R2
0.8
0.17
−
0.8
0.055
0.38
0.038
1.0
0.21
−
1.0
0.1
0.47
0.047
1.2
0.25
−
1.2
0.185
0.56
0.056
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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Figure 1. Derating Curve
300
200
150
100
50
0
−50 0 50 100 150
TA, AMBIENT TEMPERATURE (°C)
RqJA = 490°C/W
250
PD, POWER DISSIPATION (mW)
ALL MUN5311DW1T1G SERIES DEVICES
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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6
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1G, SMUN5311DW1T1G
NPN TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 2. VCE(sat) versus IC
1002030
IC, COLLECTOR CURRENT (mA)
10
1
0.1
TA=-25°C
75°C
25°C
40 50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
1
0.1
0.01
0.001 020 40 50
IC, COLLECTOR CURRENT (mA)
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
TA=-25°C
25°C
Figure 5. Output Current versus Input Voltage
75°C
25°C
TA=-25°C
100
10
1
0.1
0.01
0.001 01 234
Vin, INPUT VOLTAGE (VOLTS)
56 78 910
Figure 6. Input Voltage versus Output Current
50
010203040
4
3
1
2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
75°C
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5311DW1T1G, SMUN5311DW1T1G
PNP TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 7. VCE(sat) versus IC
100
10
1
0.1
0.01
0.001 0
Vin, INPUT VOLTAGE (VOLTS)
TA=-25°C
25°C
1 2 3 4 5 6 7 8 9 10
Figure 8. DC Current Gain
Figure 9. Output Capacitance Figure 10. Output Current versus Input
Voltage
Figure 11. Input Voltage versus Output Current
0.01
20
IC, COLLECTOR CURRENT (mA)
0.1
1
0 40 50
1000
1 10 100
IC, COLLECTOR CURRENT (mA)
TA=75°C
-25°C
100
10
0
IC, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
TA=-25°C
25°C
75°C
75°C
IC/IB = 10
50
010203040
4
3
1
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
0
TA=-25°C
25°C
75°C
25°C
VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1G, SMUN5312DW1T1G
NPN TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 12. VCE(sat) versus ICFigure 13. DC Current Gain
Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
101 100
75°C 25°C
100
0
Vin, INPUT VOLTAGE (VOLTS)
10
1
0.1
0.01
0.001 246810
TA=-25°C
0
IC, COLLECTOR CURRENT (mA)
100
TA=-25°C
75°C
10
1
0.1 10 20 30 40 50
25°C
Figure 16. Input Voltage versus Output
Current
0.001
TA=-25°C
75°C
25°C
0.01
0.1
1
40
IC, COLLECTOR CURRENT (mA)
020 50
50
0 10 203040
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC/IB = 10 VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1G, SMUN5312DW1T1G
PNP TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 17. VCE(sat) versus ICFigure 18. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
10
1100
Figure 19. Output Capacitance
IC, COLLECTOR CURRENT (mA)
010 20 30
VO = 0.2 V
TA=-25°C
75°C
100
10
1
0.1 40 50
Figure 20. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 0 1 2 3 4
Vin, INPUT VOLTAGE (VOLTS)
5 6 7 8 9 10
Figure 21. Input Voltage versus Output Current
0.01
0.1
1
10
40
IC, COLLECTOR CURRENT (mA)
0 20 50
75°C
25°C
TA=-25°C
50
010 20 30 40
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
25°C
IC/IB = 10
25°C
-25°C
VCE = 10 V
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
75°C25°C
TA=-25°C
VO = 5 V
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1G, SMUN5313DW1T1G
NPN TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 22. VCE(sat) versus IC
0246810
100
10
1
0.1
0.01
0.001
Vin, INPUT VOLTAGE (VOLTS)
TA=-25°C
75°C25°C
Figure 23. DC Current Gain
Figure 24. Output Capacitance
100
10
1
0.1
010 203040 50
IC, COLLECTOR CURRENT (mA)
Figure 25. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
10 1 100
25°C
75°C
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
Figure 26. Input Voltage versus Output Current
020 40 50
10
1
0.1
0.01
IC, COLLECTOR CURRENT (mA)
25°C
75°C
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
TA=-25°C
TA=-25°C
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5313DW1T1G, SMUN5313DW1T1G
PNP TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 27. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01 010203040
75°C
25°C
Figure 28. DC Current Gain
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
-25°C
Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 010
25°C
Vin, INPUT VOLTAGE (VOLTS)
-25°C
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
123456 789
Figure 31. Input Voltage versus Output Current
100
10
1
0.1 0 10 20 30 40
IC, COLLECTOR CURRENT (mA)
TA=-25°C
25°C
75°C
50
IC/IB = 10
TA=-25°C25°C
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
TA=75°C
VO = 0.2 V
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1G, SMUN5314DW1T1G
NPN TRANSISTOR
10
1
0.1 01020304050
100
10
10246810
4
3.5
3
2.5
2
1.5
1
0.5
002468101520253035404550
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 32. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
020406080
Figure 33. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
Figure 36. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25°C
25°C
TA=75°C
VCE = 10
300
250
200
150
100
50
02468 1520405060708090
f = 1 MHz
lE = 0 V
TA = 25°C
25°C
IC/IB = 10 TA=-25°C
TA=75°C25°C
-25°C
VO = 0.2 V TA=-25°C
75°C
VO = 5 V
25°C
75°C
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS − MUN5314DW1T1G, SMUN5314DW1T1G
PNP TRANSISTOR
10
1
0.1 010 20 30 4050
100
10
10 246810
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8 10 1520 2530 3540 4550
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 37. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
020406080
Figure 38. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
Figure 41. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25°C
25°C
TA=75°C
VCE = 10 V
180
160
140
120
100
80
60
40
20
02 4 6 8 15 20 40 50 60 70 80 90
f = 1 MHz
lE = 0 V
TA = 25°C
25°C
IC/IB = 10 TA=-25°C
TA=75°C25°C
-25°C
VO = 5 V
VO = 0.2 V 25°C
TA=-25°C
75°C
75°C
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1G, SMUN5315DW1T1G
NPN TRANSISTOR
75°C
25°C
−25°C
Figure 42. VCE(sat) versus ICFigure 43. DC Current Gain
Figure 44. Output Capacitance Figure 45. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 46. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
6
45 50403020100
0
Cob, CAPACITANCE (pF)
2
4
8
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
10
12
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5315DW1T1G, SMUN5315DW1T1G
PNP TRANSISTOR
75°C
25°C
−25°C
Figure 47. VCE(sat) versus ICFigure 48. DC Current Gain
Figure 49. Output Capacitance Figure 50. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Figure 51. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
0.01
0.01
0.1
30
VR, REVERSE BIAS VOLTAGE (VOLTS)
4.5
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
3525155
3.5
3
2.5
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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16
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1G NPN TRANSISTOR
75°C
25°C
−25°C
Figure 52. VCE(sat) versus ICFigure 53. DC Current Gain
Figure 54. Output Capacitance Figure 55. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 56. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
6
45 50403020100
0
Cob, CAPACITANCE (pF)
2
4
8
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
10
12
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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17
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5316DW1T1G PNP TRANSISTOR
75°C
25°C
−25°C
Figure 57. VCE(sat) versus ICFigure 58. DC Current Gain
Figure 59. Output Capacitance Figure 60. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Figure 61. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
0.01
0.01
0.1
30
VR, REVERSE BIAS VOLTAGE (VOLTS)
4.5
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
3525155
3.5
3
2.5
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1G, SMUN5330DW1T1G
NPN TRANSISTOR
75°C
25°C
−25°C
Figure 62. VCE(sat) versus ICFigure 63. DC Current Gain
Figure 64. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Figure 65. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
302520151050
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
151050
0.1
1
20 25
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C75°C
25°C
TA = −25°C
0.01
0.01
0.1
VO = 5 V VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5330DW1T1G, SMUN5330DW1T1G
PNP TRANSISTOR
75°C
25°C
−25°C
Figure 66. VCE(sat) versus ICFigure 67. DC Current Gain
Figure 68. Output Capacitance Figure 69. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 70. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
4.5
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
3.5
3
2.5
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
VCE = 10 V
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1G NPN TRANSISTOR
75°C
25°C
−25°C
Figure 71. VCE(sat) versus ICFigure 72. DC Current Gain
Figure 73. Output Capacitance Figure 74. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 75. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
302520151050
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
12
6
45 50403020100
0
Cob, CAPACITANCE (pF)
2
4
8
10
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
151050
0.1
1
20 25
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5331DW1T1G PNP TRANSISTOR
75°C
25°C
−25°C
Figure 76. VCE(sat) versus ICFigure 77. DC Current Gain
Figure 78. Output Capacitance Figure 79. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 80. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
4.5
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
3.5
3
2.5
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
VCE = 10 V
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1G, NSVMUN5332DW1T1G NPN
TRANSISTOR
75°C
25°C
−25°C
Figure 81. VCE(sat) versus ICFigure 82. DC Current Gain
Figure 83. Output Capacitance Figure 84. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 85. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
6
45 50403020100
0
Cob, CAPACITANCE (pF)
2
4
8
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
10
12
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5332DW1T1G, NSVMUN5332DW1T1G PNP
TRANSISTOR
75°C
25°C
−25°C
Figure 86. VCE(sat) versus ICFigure 87. DC Current Gain
Figure 88. Output Capacitance Figure 89. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 90. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100
IC, COLLECTOR CURRENT (mA)
100101
1000
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
45 50403020100
0
Cob, CAPACITANCE (pF)
1
2
4
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
3
100
5
6
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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24
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1G, NSVMUN5333DW1T1G
NPN TRANSISTOR
75°C
25°C
−25°C
Figure 91. VCE(sat) versus ICFigure 92. DC Current Gain
Figure 93. Output Capacitance Figure 94. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 95. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
302515100
IC, COLLECTOR CURRENT (mA)
100101
1000
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
151050
0.1
1
20 25
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
20
3.5
3
2.5
100
5
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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25
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5333DW1T1G, NSVMUN5333DW1T1G
PNP TRANSISTOR
75°C
25°C
−25°C
Figure 96. VCE(sat) versus ICFigure 97. DC Current Gain
Figure 98. Output Capacitance Figure 99. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 100. Input Voltage versus Output
Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
6
45 50403020100
0
Cob, CAPACITANCE (pF)
2
4
8100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
5
1
3
7f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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26
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1G, NSVMUN5334DW1T1G
NPN TRANSISTOR
75°C
25°C
−25°C
Figure 101. VCE(sat) versus ICFigure 102. DC Current Gain
Figure 103. Output Capacitance Figure 104. Output Current versus Input
Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 105. Input Voltage versus Output
Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
3
45 50403020100
0
Cob, CAPACITANCE (pF)
1
2
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
100
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
2.5
0.5
1.5
3.5
10
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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27
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5334DW1T1G, NSVMUN5334DW1T1G
PNP TRANSISTOR
75°C
25°C
−25°C
Figure 106. VCE
(
sat
)
versus ICFigure 107. DC Current Gain
IC, COLLECTOR CURRENT (mA)
1
0.1
302515100
IC, COLLECTOR CURRENT (mA)
100101
1000
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
75°C
25°C
TA = −25°C
0.01
20
100
5
IC/IB = 10 VCE = 10 V
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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28
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1G, SMUN5335DW1T1G
NPN TRANSISTOR
75°C
25°C
−25°C
Figure 108. VCE(sat) versus ICFigure 109. DC Current Gain
Figure 110. Output Capacitance Figure 111. Output Current versus Input
Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 112. Input Voltage versus Output
Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
6
45 50403020100
0
Cob, CAPACITANCE (pF)
2
4
8
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
10
12
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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29
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5335DW1T1G, SMUN5335DW1T1G
PNP TRANSISTOR
75°C
25°C
−25°C
Figure 113. VCE(sat) versus ICFigure 114. DC Current Gain
Figure 115. Output Capacitance Figure 116. Output Current versus Input
Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 117. Input Voltage versus Output
Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100
IC, COLLECTOR CURRENT (mA)
100101
1000
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°CTA = −25°C
0.01
3525155
0.01
0.1
30
3.5
3
2.5
100
4.5
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
http://onsemi.com
30
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1G NPN TRANSISTOR
75°C
25°C
−25°C
Figure 118. VCE(sat) versus ICFigure 119. DC Current Gain
Figure 120. Output Capacitance Figure 121. Output Current versus Input
Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 122. Input Voltage versus Output
Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
76543210
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.01
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN (NORMALIZED)
1.2
0.6
6050403020100
0
Cob, CAPACITANCE (pF)
0.2
0.4
0.8
1.0
100
6543210
0.1
1
10
IC, COLLECTOR CURRENT (mA)
10987
100
121086420
1
10
181614 20
Vin, INPUT VOLTAGE (VOLTS)
IC/IB = 10
75°C
25°C
TA = −25°C
VCE = 10 V
75°C
25°C
TA = −25°C
VO = 5 V
VO = 0.2 V
75°C
25°CTA = −25°C
f = 1 MHz
IE = 0 V
TA = 25°C
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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31
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5336DW1T1G PNP TRANSISTOR
75°C
25°C
−25°C
Figure 123. VCE(sat) versus ICFigure 124. DC Current Gain
Figure 125. Output Capacitance Figure 126. Output Current versus Input
Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 127. Input Voltage versus Output
Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100
IC, COLLECTOR CURRENT (mA)
100101
1000
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
100
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
3.5
3
2.5
100
4.5
5
10
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
http://onsemi.com
32
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1G NPN TRANSISTOR
Figure 128. VCE(sat) versus ICFigure 129. DC Current Gain
Figure 130. Output Capacitance Figure 131. Output Current versus Input
Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 132. Input Voltage versus Output
Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
35302520151050
IC, COLLECTOR CURRENT (mA)
100101
100
10
0.01
1000
hFE, DC CURRENT GAIN (NORMALIZED)
1.4
0.6
6050403020100
0
Cob, CAPACITANCE (pF)
0.2
0.4
0.8
1.0
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
11987
100
151050
1
10
20 25
Vin, INPUT VOLTAGE (VOLTS)
504540
0.1
0.01
10
1.2
f = 1 MHz
IE = 0 V
TA = 25°C
75°C
25°C
TA = −25°C
VO = 5 V
75°C
25°C
TA = −25°C
VO = 0.2 V
75°C
25°C
TA = −25°C
IC/IB = 10
VCE = 10 V
75°C
25°C
TA = −25°C
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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33
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5337DW1T1G PNP TRANSISTOR
75°C
25°C
−25°C
Figure 133. VCE(sat) versus ICFigure 134. DC Current Gain
Figure 135. Output Capacitance Figure 136. Output Current versus Input
Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 137. Input Voltage versus Output
Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100
IC, COLLECTOR CURRENT (mA)
100101
1000
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
100
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
3.5
3
2.5
100
4.5
5
10
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series
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34
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
E0.2 (0.008) MM
123
D
e
A1
A
A3
C
L
654
−E−
b6 PL
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
DIM MIN NOM MAX
MILLIMETERS
A0.80 0.95 1.10
A1 0.00 0.05 0.10
A3
b0.10 0.21 0.30
C0.10 0.14 0.25
D1.80 2.00 2.20
0.031 0.037 0.043
0.000 0.002 0.004
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.20 REF 0.008 REF
HE
HE
E1.15 1.25 1.35
e0.65 BSC
L0.10 0.20 0.30
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
ǒmm
inchesǓ
SCALE 20:1
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
SC−88/SC70−6/SOT−363
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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