© 2013 IXYS CORPORATION, All Rights Reserved
XPTTM 600V IGBT
GenX3TM w/ Diode
IXXN100N60B3H1 VCES = 600V
IC90 = 100A
VCE(sat) ≤ ≤
≤ ≤
≤
1.80V
tfi(typ) = 150ns
Symbol Test Conditions Maximum Ratings
VCES TJ = 25°C to 150°C 600 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25°C (Chip Calability) 170 A
IC90 TC = 90°C 100 A
IF110 TC = 110°C 50 A
ICM TC = 25°C, 1ms 440 A
IATC = 25°C 50 A
EAS TC = 25°C 600 mJ
SSOA VGE = 15V, TVJ = 150°C, RG = 2Ω ICM = 200 A
(RBSOA) Clamped Inductive Load @VCE ≤ VCES
tsc VGE = 15V, VCE = 360V, TJ = 150°C 10 μs
(SCSOA) RG = 10Ω, Non Repetitive
PCTC = 25°C 500 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOL 50/60Hz t = 1min 2500 V~
IISOL ≤ 1mA t = 1s 3000 V~
MdMounting Torque 1.5/13 Nm/lb.in.
Terminal Connection Torque 1.3/11.5 Nm/lb.in.
Weight 30 g
DS100421B(04/13)
Extreme Light Punch Through
IGBT for 10-30kHz Switching
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 600 V
VGE(th) IC= 250μA, VCE = VGE 3.0 5.5 V
ICES VCE = VCES, VGE = 0V 50 μA
TJ = 125°C 4 mA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC= 70A, VGE = 15V, Note 1 1.50 1.80 V
TJ = 150°C 1.77 V
Features
zOptimized for Low Switching Losses
zInternational Standard Package
zSquare RBSOA
zIsolation Voltage 2500V~
zAnti-Parallel Ultra Fast Diode
zOptimized for 10-30kHz Switching
zAvalanche Rated
zShort Circuit Capability
zHigh Current Handling Capability
Advantages
zHigh Power Density
zLow Gate Drive Requirement
Applications
zPower Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zWelding Machines
zLamp Ballasts
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
G
E c
E c
C
E153432
E
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXN100N60B3H1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, Note 1 22 40 S
Cies 4860 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 475 pF
Cres 83 pF
Qg(on) 143 nC
Qge IC = 70A, VGE = 15V, VCE = 0.5 • VCES 37 nC
Qgc 60 nC
td(on) 30 ns
tri 70 ns
Eon 1.9 mJ
td(off) 120 ns
tfi 150 ns
Eoff 2.0 2.8 mJ
td(on) 32 ns
tri 60 ns
Eon 2.3 mJ
td(off) 150 ns
tfi 200 ns
Eoff 2.8 mJ
RthJC 0.25 °C/W
RthCS 0.05 °C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Inductive load, TJ = 150°C
IC = 70A, VGE = 15V
VCE = 360V, RG = 2Ω
Note 2
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
VF IF = 60A, VGE = 0V, Note 1 1.6 2.5 V
TJ = 150°C 1.4 1.8 V
IRM 8.3 A
trr 140 ns
RthJC 0.42 °C/W
IF = 60A, VGE = 0V, TJ = 100°C
-diF/dt = 200A/μs, VR = 300V
Inductive load, TJ = 25°C
IC = 70A, VGE = 15V
VCE = 360V, RG = 2Ω
Note 2
SOT-227B miniBLOC (IXXN)
© 2013 IXYS CORPORATION, All Rights Reserved
IXXN100N60B3H1
Fi g . 1. Ou tpu t C har acteri sti cs @ T
J
= 25ºC
0
20
40
60
80
100
120
140
0 0.4 0.8 1.2 1.6 2 2.4 2.8
V
CE
- Volts
I
C
- Amperes
VGE
= 15V
13V
12V
10V
9V
11V
7V
6V
8V
Fi g . 2. Exte n d ed Ou tpu t Ch ar acter isti cs @ T
J
= 25ºC
0
50
100
150
200
250
300
350
0 2 4 6 8 10 12 14 16 18 20
V
CE
- Volts
I
C
- Amperes
VGE
= 15V
10V
11V
13V
12V
8V
7V
9V
14V
Fi g . 3. Ou tp ut C har acteri sti cs @ T
J
= 150º C
0
20
40
60
80
100
120
140
0 0.5 1 1.5 2 2.5 3 3.5
V
CE
- Volts
I
C
- Amperes
VGE
= 15V
13V
12V
10V
8V
9V
7V
5V
11V
Fig. 4. Dependence of V
CE(sat)
on
Junction T emperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
VGE
= 15V
I C = 70A
I C = 35A
I C = 140A
Fi g . 5. C o l l ector -to -E mitt er Vo l tage vs.
Gate-to -Emi tter Vo l tage
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I C
= 140
A
TJ = 25ºC
70
A
35
A
Fig. 6. Input Adm ittance
0
20
40
60
80
100
120
140
160
180
4567891011
V
GE
- Volts
I
C
- Amperes
TJ = 150ºC
25ºC
- 40ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXN100N60B3H1
Fi g . 11. F o r war d -B i as Safe Op er ati n g Area
0.1
1
10
100
1000
1 10 100 1000
VDS - Volts
ID - Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
10ms
V
CE(sat)
Limit
DC
100µs
100ms
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
150ºC
Fi g . 10. R everse-B i as Safe Oper atin g Area
0
20
40
60
80
100
120
140
160
180
200
220
100 150 200 250 300 350 400 450 500 550 600 650
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 2Ω
dv / dt < 10V / ns
Fi g . 12. Maximum Transi en t Thermal Imp ed an ce
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20406080100120140
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 70A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
© 2013 IXYS CORPORATION, All Rights Reserved
IXXN100N60B3H1
Fig. 13. Inductive Switching Energy Loss vs.
Gate Resistance
1.5
2.0
2.5
3.0
3.5
4.0
4.5
2 3 4 5 6 7 8 9 10 11 12 13 14 15
R
G
- Ohms
Eoff - MilliJoules
1
2
3
4
5
6
7
Eon - MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 360V
I
C
= 50A
I
C
= 100A
Fig. 16. Inductive Turn-off Switching Tim es vs.
Gate Resistance
100
140
180
220
260
300
340
23456789101112131415
R
G
- Ohms
t f i - Nanoseconds
100
140
180
220
260
300
340
t d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 360V
I
C
= 100A
I
C
= 50A
Fig . 14. In d u ctive Switchi ng En erg y Lo ss vs.
Collector Current
0
1
2
3
4
5
20 30 40 50 60 70 80 90 100
I
C
- Amperes
Eoff - MilliJoules
0
1
2
3
4
5
Eon - MilliJoules
E
off
E
on
- - - -
R
G
= 2
Ω ,
V
GE
= 15V
V
CE
= 360V
T
J
= 150ºC
T
J
= 25ºC
Fig. 15. Inductive Switching Energy Loss vs.
Junction Temperature
0
1
2
3
4
5
25 50 75 100 125 150
T
J
- Degrees Centigrade
Eoff - MilliJoules
0
1
2
3
4
5
Eon - MilliJoules
Eoff Eon - - - -
R
G
= 2
Ω ,
V
GE
= 15V
V
CE
= 360V
I
C
= 50A
I
C
= 100A
Fig. 17. Inductive Tu rn-off Switching T imes vs.
Collector Current
50
100
150
200
250
300
350
400
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t f i - Nanoseconds
40
80
120
160
200
240
280
320
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 360V
T
J
= 150ºC
T
J
= 25ºC
Fig. 18. Inductive Turn-off Switching Tim es vs.
Juncti on Temperature
100
120
140
160
180
200
220
240
260
280
25 50 75 100 125 150
T
J
- Degrees Centigrade
t f i - Nanoseconds
60
80
100
120
140
160
180
200
220
240
t d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 360V
I
C
= 100A
I
C
= 50A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXXN100N60B3H1
Fig. 20. Inductive T urn-on Switching Times vs.
Collector Current
0
20
40
60
80
100
120
140
20 30 40 50 60 70 80 90 100
I
C
- Amperes
t
r i
- Nanoseconds
24
26
28
30
32
34
36
38
t
d
(
on
)
- Nanoseconds
t
r i
td(on)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 360V
T
J
= 150ºC, 25ºC
Fig. 21. Inductive T urn-on Switching Times vs.
Jun ct i o n Temperatu re
0
20
40
60
80
100
120
140
160
180
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
28
29
30
31
32
33
34
35
36
37
t
d
(
on
)
- Nanoseconds
t
r i
td(on)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 360V
I
C
= 100A
I
C
= 50A
Fig. 19. Inductive T urn -on Switching T imes vs.
Gate Resistance
20
40
60
80
100
120
140
160
180
23456789101112131415
R
G
- Ohms
t
r i
- Nanoseconds
20
28
36
44
52
60
68
76
84
t
d
(
on
)
- Nanoseconds
t
r i
td(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 360V
I
C
= 50A
I
C
= 100A
© 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: IXX_100N60B3(7D)12-01-11-B
Fi g . 26 Maximum tr an si en t th er mal i mp ed an ce j u n ctio n to case (fo r d i o d e)
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pul se Wid th [ms]
Z(th )J C - [ ºC / W ]
Fig. 22. Forward Current IF Versus VF
Fig. 23. Reverse Recovery Charge Qr
Versus -diF/dt
Fig. 24. Peak Reverse Current IRM
Versus -diF/dt
Fig. 25. Dynamic Parameters Qr, IRM
Versus TVJ
Fig. 26. Recovery Time trr Versus
-diF/dt
IXXN100N60B3H1
Fig. 26. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse W idth Seconds
Z
(th)JC
ºC / W
Fig. 27. Maximum Transient Thermal Impedance
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