ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM
= 5200
V
IF = 80
A
Die size: 14.3 x 14.3 mm
Doc. No. 5SYA1657
-
00 July 05
• Low on-state voltage
• Soft reverse-recovery
• Passivation: SIPOS and Silicon Nitride plus Polyimide
Maximum rated values 1)
Parameter Symbol Conditions min max Unit
Repetitive peak reverse voltage VRRM 5200
V
Continuous forward current IF 80 A
Repetitive peak forward current IFRM Limited by Tvjmax 160 A
Junction temperature Tvj -40 125 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values 2)
Parameter Symbol Conditions min typ max Unit
Tvj = 25 °C
2.5 V
Continuous forward voltage VF IF = 80 A Tvj = 125 °C
2.7 V
Tvj = 25 °C
2 µA
Continuous reverse current IR VR = 5200 V Tvj = 125 °C
7 mA
Tvj = 25 °C
98 A
Peak reverse recovery current Irr Tvj = 125 °C
125 A
Tvj = 25 °C
110 µC
Recovered charge Qrr Tvj = 125 °C
175 µC
Tvj = 25 °C
840 ns
Reverse recovery time trr Tvj = 125 °C
1330
ns
Tvj = 25 °C
235 mJ
Reverse recovery energy Erec
IF = 80 A,
VR = 2800 V,
di/dt = 350 A/µs,
Lσ = 3000 nH,
Inductive load,
Switch:
2x 5SMX12N4506
Tvj = 125 °C
384 mJ
2) Characteristic values according to IEC 60747 - 2
Diode-Die
5SLX 12M5200
PRELIMINARY
5SLX 12M5200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1657-00 July 05 page 2 of 3
0
20
40
60
80
100
120
140
160
00.5 1 1.522.533.5 4
VF [V]
IF [A]
25 °C
125 °C
0
50
100
150
200
250
300
350
400
010 20 30 40 50 60 70 80 90
IF [A]
Erec [mJ], Qrr [µC], Irr [A]
Irr
Qrr
Erec
VR = 2800 V
di/dt = 350 A/µs
Tvj = 125 °C
Lσ = 3 µH
Fig. 1 Typical diode forward characteristics Fig. 2 Typical reverse recovery characteristics
vs. forward current
-200
-160
-120
-80
-40
0
40
80
120
0123456789
time [µs]
IF [A]
-3200
-2800
-2400
-2000
-1600
-1200
-800
-400
0
VR = 2800 V
IF = 80 A
di/dt = 350 A/µs
Tvj = 125 °C
Lσ = 3 µH
IR
VR
0
50
100
150
200
250
300
350
400
0100 200 300 400
di/dt [A/µs]
Erec [mJ], Qrr [µC], Irr [A]
Erec
Qrr
Irr
VR = 2800 V
IF = 80 A
Tvj = 125 °C
Lσ = 3 µH
Fig. 3 Typical diode reverse recovery behaviour Fig. 4 Typical reverse recovery vs. di/dt
5SLX 12M5200
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1657-00 July 05
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Mechanical properties
Parameter Unit
Overall die
L x W 14.3 x 14.3 mm
exposed
front metal
L x W 9.0 x 9.0 mm
Dimensions
thickness 560 ± 15 µm
front (A) AlSi1 / Al 4 + 8 µm
Metallization 3) back (K) Al / Ti / Ni / Ag 1.2 µm
3) For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline Drawing
Anode
Note : All dimensions are shown in mm
This product has been designed and qualified for Industrial Level.
