ZMY62 - DIOTEC SEMICONDUCTOR AG

Micron Serial NOR Flash Memory

1.8V, Multiple I/O, 4KB, 32KB, 64KB, Sector Erase

MT25QU256ABA

Features

• SPI-compatible serial bus interface

• Single and double transfer rate (STR/DTR)

• Clock frequency

– 166 MHz (MAX) for all protocols in STR

– 90 MHz (MAX) for all protocols in DTR

• Dual/quad I/O commands for increased through-

put up to 90 MB/s

• Supported protocols: Extended, Dual and Quad I/O

both STR and DTR

• Execute-in-place (XIP)

• PROGRAM/ERASE SUSPEND operations

• Volatile and nonvolatile configuration settings

• Software reset

• Additional reset pin for selected part numbers

• 3-byte and 4-byte address modes – enable memory

access beyond 128Mb

• Dedicated 64-byte OTP area outside main memory

– Readable and user-lockable

– Permanent lock with PROGRAM OTP command

• Erase capability

– Bulk erase

– Sector erase 64KB uniform granularity

– Subsector erase 4KB, 32KB granularity

• Erase performance: 400KB/sec (64KB sector)

• Erase performance: 80KB/sec (4KB sub-sector)

• Program performance: 2MB/sec

• Security and write protection

– Volatile and nonvolatile locking and software

write protection for each 64KB sector

– Nonvolatile configuration locking

– Password protection

– Hardware write protection: nonvolatile bits

(BP[3:0] and TB) define protected area size

– Program/erase protection during power-up

– CRC detects accidental changes to raw data

• Electronic signature

– JEDEC-standard 3-byte signature (BB19h)

– Extended device ID: two additional bytes identify

device factory options

• JESD47H-compliant

– Minimum 100,000 ERASE cycles per sector

– Data retention: 20 years (TYP)

Options Marking

• Voltage

– 1.7-2.0V U

• Density

– 256Mb 256

• Device stacking

– Monolithic A

• Device generation B

• Die revision A

• Pin configuration

– RESET# and HOLD# 8

• Sector size

– 64KB E

• Packages – JEDEC-standard, RoHS-

compliant

– 24-ball T-PBGA 05/6mm × 8mm

(5 × 5 array)

– 24-ball T-PBGA 05/6mm × 8mm

(4 × 6 array)

– Wafer level chip-scale package, 23

balls , 9 active balls (XFWLBGA 0.5P)

– 16-pin SOP2, 300 mils

(SO16W, SO16-Wide, SOIC-16)

– W-PDFN-8 6mm × 5mm

(MLP8 6mm × 5mm)

– W-PDFN-8 8mm × 6mm

(MLP8 8mm × 6mm)

• Security features

– Standard security 0

• Special options

– Standard S

– Automotive A

• Operating temperature range

– From –40°C to +85°C IT

– From –40°C to +105°C AT

– From –40°C to +125°C UT

256Mb, 1.8V Multiple I/O Serial Flash Memory

Features

CCMTD-1725822587-3458

mt25q_qljs_U_256_ABA_xxT.pdf - Rev. K 07/18 EN 1Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

Part Number Ordering

Micron Serial NOR Flash devices are available in different configurations and densities. Verify valid part numbers

by using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type,

visit www.micron.com/products. Contact the factory for devices not found.

Figure 1: Part Number Ordering Information

Production Status

Blank = Production

ES = Engineering samples

QS = Qualification samples

Operating Temperature

IT = –40°C to +85°C

AT = –40°C to +105°C

UT = –40°C to +125°C

Special Options

S = Standard

A = Automotive grade AEC-Q100

Security Features

0 = Standard default security

Package Codes

12 = 24-ball T-PBGA, 05/6 x 8mm (5 x 5 array)

14 = 24-ball T-PBGA, 05/6 x 8mm (4 x 6 array)

SC = 8-pin SOP2, 150 mils

SE = 8-pin SOP2, 208 mils

SF = 16-pin SOP2, 300 mils

W7 = 8-pin W-PDFN, 6 x 5mm

W9 = 8-pin W-PDFN, 8 x 6mm

5x = WLCSP package1

Sector size

E = 64KB sectors, 4KB and 32KB subsectors

Micron Technology

Part Family

25Q = SPI NOR

Voltage

L = 2.7–3.6V

U = 1.7–2.0V

Density

064 = 64Mb (8MB)

128 = 128Mb (16MB)

256 = 256Mb (32MB)

512 = 512Mb (64MB)

01G = 1Gb (128MB)

02G = 2Gb (256MB)

Stack

A = 1 die/1 S#

B = 2 die/1 S#

C = 4 die/1 S#

Device Generation

B = 2nd generation

Die Revision

A = Rev. A

B = Rev. B

Pin Configuration Option

1 = HOLD# pin

3 = RESET# pin

8 = RESET# and HOLD# pin

MT 25Q L xxx A BA 1 E SF IT0- S ES

Note: 1. WLCSP package codes, package size, and availability are density-specific. Contact the factory for availability.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Features

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Contents

Important Notes and Warnings ......................................................................................................................... 8

Device Description ........................................................................................................................................... 9

Device Logic Diagram ................................................................................................................................. 10

Advanced Security Protection ..................................................................................................................... 10

Signal Assignments – Package Code: 12 ........................................................................................................... 11

Signal Assignments – Package Code: 14 ........................................................................................................... 12

Signal Assignments – Package Code: 55 ........................................................................................................... 13

Signal Assignments – Package Code: SF ........................................................................................................... 14

Signal Assignments – Package Code: W7, W9 .................................................................................................... 15

Signal Descriptions ......................................................................................................................................... 16

Package Dimensions – Package Code: 12 ......................................................................................................... 18

Package Dimensions – Package Code: 14 ......................................................................................................... 19

Package Dimensions – Package Code: 55 ......................................................................................................... 20

Package Dimensions – Package Code: SF ......................................................................................................... 21

Package Dimensions – Package Code: W7 ........................................................................................................ 22

Package Dimensions – Package Code: W9 ........................................................................................................ 23

Memory Map – 256Mb Density ....................................................................................................................... 24

Status Register ................................................................................................................................................ 25

Block Protection Settings ............................................................................................................................ 26

Flag Status Register ......................................................................................................................................... 27

Extended Address Register .............................................................................................................................. 28

Internal Configuration Register ....................................................................................................................... 29

Nonvolatile Configuration Register .................................................................................................................. 30

Volatile Configuration Register ........................................................................................................................ 32

Supported Clock Frequencies ..................................................................................................................... 33

Enhanced Volatile Configuration Register ........................................................................................................ 35

Security Registers ........................................................................................................................................... 36

Sector Protection Security Register .................................................................................................................. 37

Nonvolatile and Volatile Sector Lock Bits Security ............................................................................................ 38

Volatile Lock Bit Security Register .................................................................................................................... 38

Device ID Data ............................................................................................................................................... 39

Serial Flash Discovery Parameter Data ............................................................................................................. 40

Command Definitions .................................................................................................................................... 41

Software RESET Operations ............................................................................................................................ 47

RESET ENABLE and RESET MEMORY Commands ....................................................................................... 47

READ ID Operations ....................................................................................................................................... 48

READ ID and MULTIPLE I/O READ ID Commands ...................................................................................... 48

READ SERIAL FLASH DISCOVERY PARAMETER Operation .............................................................................. 49

READ SERIAL FLASH DISCOVERY PARAMETER Command ......................................................................... 49

READ MEMORY Operations ............................................................................................................................ 50

4-BYTE READ MEMORY Operations ................................................................................................................ 51

READ MEMORY Operations Timings ............................................................................................................... 52

WRITE ENABLE/DISABLE Operations ............................................................................................................. 59

READ REGISTER Operations ........................................................................................................................... 60

WRITE REGISTER Operations ......................................................................................................................... 61

CLEAR FLAG STATUS REGISTER Operation ..................................................................................................... 63

PROGRAM Operations .................................................................................................................................... 64

4-BYTE PROGRAM Operations ........................................................................................................................ 65

PROGRAM Operations Timings ....................................................................................................................... 65

ERASE Operations .......................................................................................................................................... 68

256Mb, 1.8V Multiple I/O Serial Flash Memory

Features

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SUSPEND/RESUME Operations ..................................................................................................................... 70

PROGRAM/ERASE SUSPEND Operations .................................................................................................... 70

PROGRAM/ERASE RESUME Operations ...................................................................................................... 70

ONE-TIME PROGRAMMABLE Operations ....................................................................................................... 72

READ OTP ARRAY Command ...................................................................................................................... 72

PROGRAM OTP ARRAY Command .............................................................................................................. 72

ADDRESS MODE Operations .......................................................................................................................... 74

ENTER and EXIT 4-BYTE ADDRESS MODE Command ................................................................................ 74

DEEP POWER-DOWN Operations ................................................................................................................... 74

ENTER DEEP POWER-DOWN Command .................................................................................................... 74

RELEASE FROM DEEP POWER-DOWN Command ....................................................................................... 74

DEEP POWER-DOWN Timings .................................................................................................................... 75

QUAD PROTOCOL Operations ........................................................................................................................ 77

ENTER or RESET QUAD INPUT/OUTPUT MODE Command ....................................................................... 77

CYCLIC REDUNDANCY CHECK Operations .................................................................................................... 78

State Table ..................................................................................................................................................... 80

XIP Mode ....................................................................................................................................................... 81

Activate and Terminate XIP Using Volatile Configuration Register ................................................................. 81

Activate and Terminate XIP Using Nonvolatile Configuration Register .......................................................... 81

Confirmation Bit Settings Required to Activate or Terminate XIP .................................................................. 82

Terminating XIP After a Controller and Memory Reset ................................................................................. 82

Power-Up and Power-Down ............................................................................................................................ 83

Power-Up and Power-Down Requirements .................................................................................................. 83

Active, Standby, and Deep Power-Down Modes ................................................................................................ 85

Power Loss and Interface Rescue ..................................................................................................................... 85

Recovery .................................................................................................................................................... 85

Power Loss Recovery ................................................................................................................................... 86

Interface Rescue ......................................................................................................................................... 86

Initial Delivery Status ..................................................................................................................................... 86

Absolute Ratings and Operating Conditions ..................................................................................................... 87

DC Characteristics and Operating Conditions .................................................................................................. 89

AC Characteristics and Operating Conditions .................................................................................................. 91

AC Reset Specifications ................................................................................................................................... 93

Program/Erase Specifications ......................................................................................................................... 97

Revision History ............................................................................................................................................. 98

Rev. K – 07/18 ............................................................................................................................................. 98

Rev. J – 03/18 .............................................................................................................................................. 98

Rev. I – 07/17 .............................................................................................................................................. 98

Rev. H – 05/17 ............................................................................................................................................. 98

Rev. G – 07/16 ............................................................................................................................................. 98

Rev. F – 06/16 ............................................................................................................................................. 98

Rev. E – 01/16 ............................................................................................................................................. 98

Rev. D – 10/15 ............................................................................................................................................. 98

Rev. C – 09/15 ............................................................................................................................................. 99

Rev. B – 08/15 ............................................................................................................................................. 99

Rev. A – 07/14 ............................................................................................................................................. 99

256Mb, 1.8V Multiple I/O Serial Flash Memory

Features

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List of Figures

Figure 1: Part Number Ordering Information .................................................................................................... 2

Figure 2: Block Diagram .................................................................................................................................. 9

Figure 3: Logic Diagram ................................................................................................................................. 10

Figure 4: 24-Ball T-BGA, 5 x 5 (Balls Down) ..................................................................................................... 11

Figure 5: 24-Ball TBGA, 4 x 6 (Balls Down) ...................................................................................................... 12

Figure 6: 23-Ball XFWLBGA (Top View) .......................................................................................................... 13

Figure 7: 16-Pin, Plastic Small Outline – SO16 (Top View) ................................................................................ 14

Figure 8: 8-Pin, SOP2 or W-PDFN (Top View) ................................................................................................. 15

Figure 9: 24-Ball T-PBGA (5 x 5 ball grid array) – 6mm x 8mm .......................................................................... 18

Figure 10: 24-Ball T-PBGA (24b05) – 6mm x 8mm ........................................................................................... 19

Figure 11: 23-Ball XFWLBGA .......................................................................................................................... 20

Figure 12: 16-Pin SOP2 – 300 Mils Body Width ................................................................................................ 21

Figure 13: W-PDFN-8 (MLP8) – 6mm x 5mm .................................................................................................. 22

Figure 14: W-PDFN-8 (MLP8) – 8mm x 6mm .................................................................................................. 23

Figure 15: Memory Array Segments ................................................................................................................ 28

Figure 16: Internal Configuration Register ...................................................................................................... 29

Figure 17: Sector and Password Protection ..................................................................................................... 36

Figure 18: RESET ENABLE and RESET MEMORY Command ........................................................................... 47

Figure 19: READ ID and MULTIPLE I/O READ ID Commands ......................................................................... 48

Figure 20: READ SERIAL FLASH DISCOVERY PARAMETER Command – 5Ah ................................................... 49

Figure 21: READ – 03h/13h3 ........................................................................................................................... 52

Figure 22: FAST READ – 0Bh/0Ch3 ................................................................................................................. 52

Figure 23: DUAL OUTPUT FAST READ – 3Bh/3Ch3 ......................................................................................... 53

Figure 24: DUAL INPUT/OUTPUT FAST READ – BBh/BCh3 ............................................................................ 53

Figure 25: QUAD OUTPUT FAST READ – 6Bh/6Ch3 ........................................................................................ 54

Figure 26: QUAD INPUT/OUTPUT FAST READ – EBh/ECh3 ............................................................................ 54

Figure 27: QUAD INPUT/OUTPUT WORD READ – E7h3 ................................................................................. 55

Figure 28: DTR FAST READ – 0Dh/0Eh3 .......................................................................................................... 56

Figure 29: DTR DUAL OUTPUT FAST READ – 3Dh3 ........................................................................................ 56

Figure 30: DTR DUAL INPUT/OUTPUT FAST READ – BDh3 ............................................................................ 57

Figure 31: DTR QUAD OUTPUT FAST READ – 6Dh3 ........................................................................................ 58

Figure 32: DTR QUAD INPUT/OUTPUT FAST READ – EDh3 ............................................................................ 58

Figure 33: WRITE ENABLE and WRITE DISABLE Timing ................................................................................. 59

Figure 34: READ REGISTER Timing ................................................................................................................ 60

Figure 35: WRITE REGISTER Timing .............................................................................................................. 62

Figure 36: CLEAR FLAG STATUS REGISTER Timing ........................................................................................ 63

Figure 37: PAGE PROGRAM Command .......................................................................................................... 65

Figure 38: DUAL INPUT FAST PROGRAM Command ...................................................................................... 66

Figure 39: EXTENDED DUAL INPUT FAST PROGRAM Command ................................................................... 66

Figure 40: QUAD INPUT FAST PROGRAM Command ..................................................................................... 67

Figure 41: EXTENDED QUAD INPUT FAST PROGRAM Command ................................................................... 67

Figure 42: SUBSECTOR and SECTOR ERASE Timing ....................................................................................... 69

Figure 43: BULK ERASE Timing ...................................................................................................................... 69

Figure 44: PROGRAM/ERASE SUSPEND and RESUME Timing ........................................................................ 71

Figure 45: READ OTP ARRAY Command Timing ............................................................................................. 72

Figure 46: PROGRAM OTP Command Timing ................................................................................................. 73

Figure 47: ENTER DEEP POWER-DOWN Timing ............................................................................................. 75

Figure 48: RELEASE FROM DEEP POWER-DOWN Timing ............................................................................... 76

Figure 49: XIP Mode Directly After Power-On .................................................................................................. 81

Figure 50: Power-Up Timing .......................................................................................................................... 84

256Mb, 1.8V Multiple I/O Serial Flash Memory

Features

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Figure 51: AC Timing Input/Output Reference Levels ...................................................................................... 88

Figure 52: Reset AC Timing During PROGRAM and ERASE Cycle ..................................................................... 94

Figure 53: Reset Enable and Reset Memory Timing ......................................................................................... 94

Figure 54: Serial Input Timing STR ................................................................................................................. 94

Figure 55: Serial Input Timing DTR ................................................................................................................ 95

Figure 56: Write Protect Setup and Hold During WRITE STATUS REGISTER Operation (SRWD = 1) ................... 95

Figure 57: Hold Timing .................................................................................................................................. 95

Figure 58: Output Timing for STR ................................................................................................................... 96

Figure 59: Output Timing for DTR .................................................................................................................. 96

256Mb, 1.8V Multiple I/O Serial Flash Memory

Features

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List of Tables

Table 1: Signal Descriptions ........................................................................................................................... 16

Table 2: Memory Map .................................................................................................................................... 24

Table 3: Status Register .................................................................................................................................. 25

Table 4: Protected Area .................................................................................................................................. 26

Table 5: Flag Status Register ........................................................................................................................... 27

Table 6: Extended Address Register ................................................................................................................ 28

Table 7: Nonvolatile Configuration Register .................................................................................................... 30

Table 8: Volatile Configuration Register .......................................................................................................... 32

Table 9: Sequence of Bytes During Wrap ......................................................................................................... 32

Table 10: Clock Frequencies – STR (in MHz) ................................................................................................... 33

Table 11: Clock Frequencies – DTR (in MHz) .................................................................................................. 34

Table 12: Enhanced Volatile Configuration Register ........................................................................................ 35

Table 13: Sector Protection Register ............................................................................................................... 37

Table 14: Global Freeze Bit ............................................................................................................................. 37

Table 15: Nonvolatile and Volatile Lock Bits .................................................................................................... 38

Table 16: Volatile Lock Bit Register ................................................................................................................. 38

Table 17: Device ID Data ............................................................................................................................... 39

Table 18: Extended Device ID Data, First Byte ................................................................................................. 39

Table 19: Command Set ................................................................................................................................. 41

Table 20: RESET ENABLE and RESET MEMORY Operations ............................................................................ 47

Table 21: READ ID and MULTIPLE I/O READ ID Operations ........................................................................... 48

Table 22: READ MEMORY Operations ............................................................................................................ 50

Table 23: 4-BYTE READ MEMORY Operations ................................................................................................ 51

Table 24: WRITE ENABLE/DISABLE Operations ............................................................................................. 59

Table 25: READ REGISTER Operations ........................................................................................................... 60

Table 26: WRITE REGISTER Operations .......................................................................................................... 61

Table 27: CLEAR FLAG STATUS REGISTER Operation ..................................................................................... 63

Table 28: PROGRAM Operations .................................................................................................................... 64

Table 29: 4-BYTE PROGRAM Operations ........................................................................................................ 65

Table 30: ERASE Operations ........................................................................................................................... 68

Table 31: SUSPEND/RESUME Operations ...................................................................................................... 70

Table 32: OTP Control Byte (Byte 64) .............................................................................................................. 73

Table 33: ENTER and EXIT 4-BYTE ADDRESS MODE Operations .................................................................... 74

Table 34: DEEP POWER-DOWN Operations .................................................................................................... 74

Table 35: ENTER and RESET QUAD PROTOCOL Operations ............................................................................ 77

Table 36: CRC Command Sequence on Entire Device ...................................................................................... 78

Table 37: CRC Command Sequence on a Range .............................................................................................. 79

Table 38: Operations Allowed/Disallowed During Device States ...................................................................... 80

Table 39: XIP Confirmation Bit ....................................................................................................................... 82

Table 40: Effects of Running XIP in Different Protocols .................................................................................... 82

Table 41: Power-Up Timing and VWI Threshold ............................................................................................... 84

Table 42: Absolute Ratings ............................................................................................................................. 87

Table 43: Operating Conditions ...................................................................................................................... 87

Table 44: Input/Output Capacitance .............................................................................................................. 87

Table 45: AC Timing Input/Output Conditions ............................................................................................... 88

Table 46: DC Current Characteristics and Operating Conditions ...................................................................... 89

Table 47: DC Voltage Characteristics and Operating Conditions ...................................................................... 89

Table 48: AC Characteristics and Operating Conditions ................................................................................... 91

Table 49: AC RESET Conditions ...................................................................................................................... 93

Table 50: Program/Erase Specifications .......................................................................................................... 97

256Mb, 1.8V Multiple I/O Serial Flash Memory

Features

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Important Notes and Warnings

Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document,

including without limitation specifications and product descriptions. This document supersedes and replaces all

information supplied prior to the publication hereof. You may not rely on any information set forth in this docu-

ment if you obtain the product described herein from any unauthorized distributor or other source not authorized

by Micron.

Automotive Applications. Products are not designed or intended for use in automotive applications unless specifi-

cally designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distrib-

utor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims,

costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of

product liability, personal injury, death, or property damage resulting directly or indirectly from any use of non-

automotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and con-

ditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micron

products are not designed or intended for use in automotive applications unless specifically designated by Micron

as automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to in-

demnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys'

fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage

resulting from any use of non-automotive-grade products in automotive applications.

Critical Applications. Products are not authorized for use in applications in which failure of the Micron compo-

nent could result, directly or indirectly in death, personal injury, or severe property or environmental damage

("Critical Applications"). Customer must protect against death, personal injury, and severe property and environ-

mental damage by incorporating safety design measures into customer's applications to ensure that failure of the

Micron component will not result in such harms. Should customer or distributor purchase, use, or sell any Micron

component for any critical application, customer and distributor shall indemnify and hold harmless Micron and

its subsidiaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims,

costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of

product liability, personal injury, or death arising in any way out of such critical application, whether or not Mi-

cron or its subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the

Micron product.

Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems,

applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT FAIL-

URE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINE

WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, OR

PRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are included

in customer's applications and products to eliminate the risk that personal injury, death, or severe property or en-

vironmental damages will result from failure of any semiconductor component.

Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or consequential

damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such damages are based on tort, warranty,

breach of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's duly

authorized representative.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Important Notes and Warnings

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Device Description

The MT25Q is a high-performance multiple input/output serial Flash memory device. It

features a high-speed SPI-compatible bus interface, execute-in-place (XIP) functionali-

ty, advanced write protection mechanisms, and extended address access. Innovative,

high-performance, dual and quad input/output commands enable double or quadru-

ple the transfer bandwidth for READ and PROGRAM operations.

Figure 2: Block Diagram

HOLD#

W# Control logic High voltage

generator

Memory

Address register

and counter

256 byte

data buffer

256 bytes (page size)

X decoder

Y decoder

Status

64 OTP bytes

I/O shift register

DQ0

DQ1

DQ2

DQ3

RESET#

Note: 1. Each page of memory can be individually programmed, but the device is not page-eras-

able.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Device Description

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Device Logic Diagram

Figure 3: Logic Diagram

DQ[3:0]

VCC

VSS

RESET#

HOLD#

Notes: 1. Depending on the selected device (see Part Numbering Ordering Information), DQ3 =

DQ3/RESET# or DQ3/HOLD#.

2. A separate RESET pin is available on dedicated part numbers (see Part Numbering Order-

ing Information).

Advanced Security Protection

The device offers an advanced security protection scheme where each sector can be in-

dependently locked, by either volatile or nonvolatile locking features. The nonvolatile

locking configuration can also be locked, as well password-protected. See Block Protec-

tion Settings and Sector and Password Protection for more details.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Device Description

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Signal Assignments – Package Code: 12

Figure 4: 24-Ball T-BGA, 5 x 5 (Balls Down)

1 2 3 4 5

MT25QXXXXXXX8E12-XXXX

RESET#

VCC

W#/DQ2

DQ3/HOLD#

RFU

DQ1

RFU

VSS

RFU

DQ0

RFU

1 2 3 4 5

MT25QXXXXXXX1E12-XXXX

DNU

VCC

W#/DQ2

DQ3/HOLD#

RFU

DQ1

RFU

VSS

RFU

DQ0

RFU

1 2 3 4 5

MT25QXXXXXXX3E12-XXXX

DNU

VCC

W#/DQ2

DQ3/RESET#

RFU

DQ1

RFU

VSS

RFU

DQ0

RFU

Notes: 1. RESET# or HOLD# signals can share ball D4 with DQ3, depending on the selected device

(see Part Numbering Ordering Information). When using single and dual I/O commands

on these parts, DQ3 must be driven HIGH by the host, or an external pull-up resistor

must be placed on the PCB, in order to avoid allowing the HOLD# or RESET# input to

float.

2. Ball A4 = RESET# or DNU, depending on the part number. This signal has an internal

pull-up resistor and may be left unconnected if not used.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Signal Assignments – Package Code: 12

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Signal Assignments – Package Code: 14

Figure 5: 24-Ball TBGA, 4 x 6 (Balls Down)

1 2 3 4

MT25QXXXXXXX8E14-XXXX

RESET#

VCC

W#/DQ2

DQ3/HOLD#

DQ1

VSS

DQ0

1 2 3 4

MT25QXXXXXXX1E14-XXXX

DNU

VCC

W#/DQ2

DQ3/HOLD#

DQ1

VSS

DQ0

1 2 3 4

MT25QXXXXXXX3E14-XXXX

DNU

VCC

W#/DQ2

DQ3/RESET#

DQ1

VSS

DQ0

Notes: 1. RESET# or HOLD# signals can share ball D4 with DQ3, depending on the selected device

(see Part Numbering Ordering Information). When using single and dual I/O commands

on these parts, DQ3 must be driven HIGH by the host, or an external pull-up resistor

must be placed on the PCB, in order to avoid allowing the HOLD# or RESET# input to

float.

2. Ball A4 = RESET# or DNU, depending on the part number. This signal has an internal

pull-up resistor and may be left unconnected if not used.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Signal Assignments – Package Code: 14

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Signal Assignments – Package Code: 55

Figure 6: 23-Ball XFWLBGA (Top View)

54321

Top view (ball side down)

Note: 1. For detail information about this package option, contact the factory to request the da-

ta sheet addendum.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Signal Assignments – Package Code: 55

CCMTD-1725822587-3458

mt25q_qljs_U_256_ABA_xxT.pdf - Rev. K 07/18 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Signal Assignments – Package Code: SF

Figure 7: 16-Pin, Plastic Small Outline – SO16 (Top View)

DQ0

VSS

W#/DQ2

DQ3/HOLD#

VCC

RESET#

DNU

DQ0

VSS

W#/DQ2

DNU

DQ0

VSS

W#/DQ2

DNU

DQ1

DQ3/HOLD#

VCC

DNU

DQ1

DQ3/RESET#

VCC

DNU

DQ1

MT25QXXXXXXX8EXX-XXXX

MT25QXXXXXXX3EXX-XXXX

MT25QXXXXXXX1EXX-XXXX

Notes: 1. RESET# or HOLD# signals can share pin 1 with DQ3, depending on the selected device

(see Part Numbering Ordering Information). When using single and dual I/O commands

on these parts, DQ3 must be driven HIGH by the host, or an external pull-up resistor

must be placed on the PCB, in order to avoid allowing the HOLD# or RESET# input to

float.

2. Pin 3 = RESET# or DNU, depending on the part number. This signal has an internal pull-

up resistor and may be left unconnected if not used.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Signal Assignments – Package Code: SF

CCMTD-1725822587-3458

mt25q_qljs_U_256_ABA_xxT.pdf - Rev. K 07/18 EN 14 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Signal Assignments – Package Code: W7, W9

Figure 8: 8-Pin, SOP2 or W-PDFN (Top View)

DQ1

W#/DQ2

VSS

MT25QXXXXXXX1EXX-XXXX

MT25QXXXXXXX3EXX-XXXX

DQ1

W#/DQ2

VSS

VCC

DQ3/HOLD#

DQ0

VCC

DQ3/RESET#

DQ0

Notes: 1. RESET# or HOLD# signals can share Pin 7 with DQ3, depending on the selected device

(see Part Numbering Ordering Information). When using single and dual I/O commands

on these parts, DQ3 must be driven high by the host, or an external pull-up resistor must

be placed on the PCB, in order to avoid allowing the HOLD# or RESET# input to float.

2. On the underside of the W-PDFN package, there is an exposed central pad that is pulled

internally to VSS. It can be left floating or can be connected to VSS. It must not be con-

nected to any other voltage or signal line on the PCB.

3. MT25QXXXXXXX8EXX-XXXX is not available on 8 pin package.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Signal Assignments – Package Code: W7, W9

CCMTD-1725822587-3458

mt25q_qljs_U_256_ABA_xxT.pdf - Rev. K 07/18 EN 15 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Signal Descriptions

The signal description table below is a comprehensive list of signals for the MT25Q fam-

ily devices. All signals listed may not be supported on this device. See Signal Assign-

ments for information specific to this device.

Table 1: Signal Descriptions

Symbol Type Description

S# Input Chip select: When S# is driven HIGH, the device will enter standby mode, unless an internal

PROGRAM, ERASE, or WRITE STATUS REGISTER cycle is in progress. All other input pins are ig-

nored and the output pins are tri-stated. On parts with the pin configuration offering a dedica-

ted RESET# pin, however, the RESET# input pin remains active even when S# is HIGH.

Driving S# LOW enables the device, placing it in the active mode.

After power-up, a falling edge on S# is required prior to the start of any command.

C Input Clock: Provides the timing of the serial interface. Command inputs are latched on the rising

edge of the clock. In STR commands or protocol, address and data inputs are latched on the

rising edge of the clock, while data is output on the falling edge of the clock. In DTR com-

mands or protocol, address and data inputs are latched on both edges of the clock, and data is

output on both edges of the clock.

RESET# Input RESET#: When RESET# is driven LOW, the device is reset and the outputs are tri-stated. If RE-

SET# is driven LOW while an internal WRITE, PROGRAM, or ERASE operation is in progress, da-

ta may be lost. The RESET# functionality can be disabled using bit 4 of the nonvolatile configu-

ration register or bit 4 of the enhanced volatile configuration register.

For pin configurations that share the DQ3 pin with RESET#, the RESET# functionality is disabled

in QIO-SPI mode.

HOLD# Input HOLD: Pauses serial communications with the device without deselecting or resetting the de-

vice. Outputs are tri-stated and inputs are ignored. The HOLD# functionality can be disabled

using bit 4 of the nonvolatile configuration register or bit 4 of the enhanced volatile configura-

tion register.

For pin configurations that share the DQ3 pin with HOLD#, the HOLD# functionality is disabled

in QIO-SPI mode or when DTR operation is enabled.

W# Input Write protect: Freezes the status register in conjunction with the enable/disable bit of the sta-

tus register. When the enable/disable bit of the status register is set to 1 and the W# signal is

driven LOW, the status register nonvolatile bits become read-only and the WRITE STATUS REG-

ISTER operation will not execute. During the extended-SPI protocol with QOFR and QIOFR in-

structions, and with QIO-SPI protocol, this pin function is an input/output as DQ2 functionality.

This signal does not have internal pull-ups, it cannot be left floating and must be driven, even

if none of W#/DQ2 function is used.

DQ[3:0] I/O Serial I/O: The bidirectional DQ signals transfer address, data, and command information.

When using legacy (x1) SPI commands in extended I/O protocol (XIO-SPI), DQ0 is an input and

DQ1 is an output. DQ[3:2] are not used.

When using dual commands in XIO-SPI or when using DIO-SPI, DQ[1:0] are I/O. DQ[3:2] are not

used.

When using quad commands in XIO-SPI or when using QIO-SPI, DQ[3:0] are I/O.

VCC Supply Core and I/O power supply.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Signal Descriptions

CCMTD-1725822587-3458

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Table 1: Signal Descriptions (Continued)

Symbol Type Description

VSS Supply Core and I/O ground connection.

DNU – Do not use: Do not connect to any other signal, or power supply; must be left floating.

RFU – Reserved for future use: Reserved by Micron for future device functionality and enhance-

ment. Recommend that these be left floating. May be connected internally, but external con-

nections will not affect operation.

NC – No connect: No internal connection; can be driven or floated.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Signal Descriptions

CCMTD-1725822587-3458

mt25q_qljs_U_256_ABA_xxT.pdf - Rev. K 07/18 EN 17 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Package Dimensions – Package Code: 12

Figure 9: 24-Ball T-PBGA (5 x 5 ball grid array) – 6mm x 8mm

0.3 ±0.05

1.1 ±0.1

4 CTR

6 ±0.1

1 TYP

8 ±0.1

1 TYP

Ball A1 IDBall A1 ID

Seating plane

0.1 A

24X Ø0.4

Dimensions

apply to solder

balls post-reflow

on Ø0.40 SMD

ball pads.

4 CTR

135 24

Notes: 1. All dimensions are in millimeters.

2. See Part Number Ordering Information for complete package names and details.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Package Dimensions – Package Code: 12

CCMTD-1725822587-3458

mt25q_qljs_U_256_ABA_xxT.pdf - Rev. K 07/18 EN 18 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Package Dimensions – Package Code: 14

Figure 10: 24-Ball T-PBGA (24b05) – 6mm x 8mm

0.2 MIN

1.08 ±0.12

3 CTR

6 ±0.1

1 TYP

8 ±0.1

1 TYP

Ball A1 IDBall A1 ID

Seating plane

0.1 A

24X Ø0.4

Dimensions apply

to solder balls post-

reflow on Ø0.4 SMD

ball pads.

5 CTR

13 24

Notes: 1. All dimensions are in millimeters.

2. See Part Number Ordering Information for complete package names and details.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Package Dimensions – Package Code: 14

CCMTD-1725822587-3458

mt25q_qljs_U_256_ABA_xxT.pdf - Rev. K 07/18 EN 19 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Package Dimensions – Package Code: 55

Figure 11: 23-Ball XFWLBGA

Seating plane

A A0.05

Ball A1 ID

123456

Note: 1. For detail information about this package option, contact the factory to request the da-

ta sheet addendum.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Package Dimensions – Package Code: 55

CCMTD-1725822587-3458

mt25q_qljs_U_256_ABA_xxT.pdf - Rev. K 07/18 EN 20 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Package Dimensions – Package Code: SF

Figure 12: 16-Pin SOP2 – 300 Mils Body Width

0.23 MIN/

0.32 MAX

0.40 MIN/

1.27 MAX

0.20 ±0.1

2.5 ±0.15

10.30 ±0.20

7.50 ±0.10

10.00 MIN/

10.65 MAX

0.33 MIN/

0.51 MAX

0.1 Z

0° MIN/8° MAX

1.27 TYP

h x 45°

Notes: 1. All dimensions are in millimeters.

2. See Part Number Ordering Information for complete package names and details.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Package Dimensions – Package Code: SF

CCMTD-1725822587-3458

mt25q_qljs_U_256_ABA_xxT.pdf - Rev. K 07/18 EN 21 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Package Dimensions – Package Code: W7

Figure 13: W-PDFN-8 (MLP8) – 6mm x 5mm

5 ±0.1

6 ±0.1

0 MIN

0.75 ±0.05

1.27

TYP

3 ±0.1

CTR

3 ±0.1

CTR

8X 0.4 ±0.05

CTR

8X 0.6 ±0.05 Pin A1 ID Pin A1 ID

3.81

CTR

Exposed die

attach pad.

Seating plane

0.08 A

Notes: 1. All dimensions are in millimeters.

2. See Part Number Ordering Information for complete package names and details.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Package Dimensions – Package Code: W7

CCMTD-1725822587-3458

mt25q_qljs_U_256_ABA_xxT.pdf - Rev. K 07/18 EN 22 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Package Dimensions – Package Code: W9

Figure 14: W-PDFN-8 (MLP8) – 8mm x 6mm

Seating plane

0.08 A

0 MIN

0.75 ±0.05

3.81

CTR

6 ±0.1

8X 0.5 ±0.05

8 ±0.1

1.27

TYP 8X 0.4 ±0.05

CTR

Pin A1 ID

4.3 ±0.1

CTR

3.4 ±0.1

CTR

Exposed die

attach pad.

Pin A1 ID

Micron logo

to be lazed.

Notes: 1. All dimensions are in millimeters.

2. See Part Number Ordering Information for complete package names and details.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Package Dimensions – Package Code: W9

CCMTD-1725822587-3458

mt25q_qljs_U_256_ABA_xxT.pdf - Rev. K 07/18 EN 23 Micron Technology, Inc. reserves the right to change products or specifications without notice.

Memory Map – 256Mb Density

Table 2: Memory Map

Sector Subsector (32KB) Subsector (4KB)

Address Range

Start End

511 1023 8191 01FF F000h 01FF FFFFh

⋮ ⋮ ⋮

8184 01FF 8000h 01FF 8FFFh

1022 8183 01FF 7000h 01FF 7FFFh

⋮ ⋮ ⋮

8176 01FF 0000h 01FF 0FFFh

⋮ ⋮ ⋮ ⋮ ⋮

255 511 4095 00FF F000h 00FF FFFFh

⋮ ⋮ ⋮

4088 00FF 8000h 00FF 8FFFh

510 4087 00FF 7000h 00FF 7FFFh

⋮ ⋮ ⋮

4080 00FF 0000h 00FF 0FFFh

⋮ ⋮ ⋮ ⋮ ⋮

127 255 2047 007F F000h 007F FFFFh

⋮ ⋮ ⋮

2040 007F 8000h 007F 8FFFh

254 2039 007F 7000h 007F 7FFFh

⋮ ⋮ ⋮

2032 007F 0000h 007F 0FFFh

⋮ ⋮ ⋮ ⋮ ⋮

0 1 15 0000 F000h 0000 FFFFh

⋮ ⋮ ⋮

8 0000 8000h 0000 8FFFh

0 7 0000 7000h 0000 7FFFh

⋮ ⋮ ⋮

0 0000 0000h 0000 0FFFh

Note: 1. See Part Number Ordering Information, Sector Size – Part Numbers table for options.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Memory Map – 256Mb Density

CCMTD-1725822587-3458

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Status Register

Status register bits can be read from or written to using READ STATUS REGISTER or

WRITE STATUS REGISTER commands, respectively. When the status register enable/

disable bit (bit 7) is set to 1 and W# is driven LOW, the status register nonvolatile bits

become read-only and the WRITE STATUS REGISTER operation will not execute. The

only way to exit this hardware-protected mode is to drive W# HIGH.

Table 3: Status Register

Bit Name Settings Description Notes

7 Status register

write enable/disa-

ble

0 = Enabled (Default)

1 = Disabled

Nonvolatile control bit: Used with W# to enable or

disable writing to the status register.

5 Top/bottom 0 = Top (Default)

1 = Bottom

Nonvolatile control bit: Determines whether the pro-

tected memory area defined by the block protect bits

starts from the top or bottom of the memory array.

6, 4:2 BP[3:0] See Protected Area ta-

bles

Nonvolatile control bit: Defines memory to be soft-

ware protected against PROGRAM or ERASE operations.

When one or more block protect bits is set to 1, a desig-

nated memory area is protected from PROGRAM and

ERASE operations.

1 Write enable latch 0 = Clear (Default)

1 = Set

Volatile control bit: The device always powers up with

this bit cleared to prevent inadvertent WRITE, PRO-

GRAM, or ERASE operations. To enable these operations,

the WRITE ENABLE operation must be executed first to

set this bit.

0 Write in progress 0 = Ready (Default)

1 = Busy

Volatile status bit: Indicates if one of the following

command cycles is in progress:

WRITE STATUS REGISTER

WRITE NONVOLATILE CONFIGURATION REGISTER

PROGRAM

ERASE

Notes: 1. The BULK ERASE command is executed only if all bits = 0.

2. Status register bit 0 is the inverse of flag status register bit 7.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Status Register

CCMTD-1725822587-3458

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Block Protection Settings

Table 4: Protected Area

Status Register Content Protected Area

Top/Bottom BP3 BP2 BP1 BP0 64KB Sectors

0 0 0 0 0 None

0 0 0 0 1 511:511

0 0 0 1 0 511:510

0 0 0 1 1 511:508

0 0 1 0 0 511:504

0 0 1 0 1 511:496

0 0 1 1 0 511:480

0 0 1 1 1 511:448

0 1 0 0 0 511:384

0 1 0 0 1 511:256

0 1 0 1 0 511:0

0 1 0 1 1 511:0

0 1 1 0 0 511:0

0 1 1 0 1 511:0

0 1 1 1 0 511:0

0 1 1 1 1 511:0

1 0 0 0 0 None

1 0 0 0 1 0:0

1 0 0 1 0 1:0

1 0 0 1 1 3:0

1 0 1 0 0 7:0

1 0 1 0 1 15:0

1 0 1 1 0 31:0

1 0 1 1 1 63:0

1 1 0 0 0 127:0

1 1 0 0 1 255:0

1 1 0 1 0 511:0

1 1 0 1 1 511:0

1 1 1 0 0 511:0

1 1 1 0 1 511:0

1 1 1 1 0 511:0

1 1 1 1 1 511:0

256Mb, 1.8V Multiple I/O Serial Flash Memory

Status Register

CCMTD-1725822587-3458

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Flag Status Register

Flag status register bits are read by using READ FLAG STATUS REGISTER command. All

bits are volatile and are reset to zero on power-up.

Status bits are set and reset automatically by the internal controller. Error bits must be

cleared through the CLEAR STATUS REGISTER command.

Table 5: Flag Status Register

Bit Name Settings Description

7 Program or

erase

controller

0 = Busy

1 = Ready

Status bit: Indicates whether one of the following

command cycles is in progress: WRITE STATUS

6 Erase suspend 0 = Clear

1 = Suspend

Status bit: Indicates whether an ERASE operation has been

or is going to be suspended.

5 Erase 0 = Clear

1 = Failure or protection error

Error bit: Indicates whether an ERASE operation has suc-

ceeded or failed.

4 Program 0 = Clear

1 = Failure or protection error

Error bit: Indicates whether a PROGRAM operation has suc-

ceeded or failed. It indicates, also, whether a CRC check has

succeeded or failed.

3 Reserved 0 Reserved

2 Program sus-

pend

0 = Clear

1 = Suspend

Status bit: Indicates whether a PROGRAM operation has

been or is going to be suspended.

1 Protection 0 = Clear

1 = Failure or protection error

Error bit: Indicates whether an ERASE or PROGRAM opera-

tion has attempted to modify the protected array sector, or

whether a PROGRAM operation has attempted to access the

locked OTP space.

0 Addressing 0 = 3-byte addressing

1 = 4-byte addressing

Status bit: Indicates whether 3-byte or 4-byte address

mode is enabled.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Flag Status Register

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Extended Address Register

The 3-byte address mode can only access 128Mb of memory. To access the full device in

3-byte address mode, the device includes an extended address register that indirectly

provides a fourth address byte A[31:25]. The extended address register bit A0 operates as

memory address bit A24 to select one of the two 128Mb segments of the memory array.

If 4-byte addressing is enabled, the extended address register settings are ignored.

Table 6: Extended Address Register

Bit Name Settings Description

7:1 A[31:25] 0000000 Reserved

0 A24 1 = Highest 128Mb segment

0 = Lowest 128Mb segment (default)

Enables specified 128Mb memory segment. The de-

fault (lowest) setting can be changed to the high-

est 128Mb segment using bit 1 of the nonvolatile

configuration register.

Figure 15: Memory Array Segments

A24 = 0

A24 = 1

00FFFFFFh

00000000h

01FFFFFFh

01000000h

The PROGRAM and ERASE operations act upon the 128Mb segment selected in the ex-

tended address register. The BULK ERASE operation erases the entire device.

The READ operation begins reading in the selected 128Mb segment, but is not bound

by it.

In a continuous READ, when the last byte of the segment is read, the next byte output is

the first byte of the next segment. The operation wraps to 0000000h; therefore, a down-

load of the whole array is possible with one READ operation.

The value of the extended address register does not change when a READ operation

crosses the selected 128Mb boundary.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Extended Address Register

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Internal Configuration Register

The memory configuration is set by an internal configuration register that is not directly

accessible to users.

The user can change the default configuration at power up by using the WRITE NON-

VOLATILE CONFIGURATION REGISTER. Information from the nonvolatile configura-

tion register overwrites the internal configuration register during power-on or after a re-

set.

The user can change the configuration during operation by using the WRITE VOLATILE

CONFIGURATION REGISTER or the WRITE ENHANCED VOLATILE CONFIGURATION

the internal configuration register immediately after the WRITE command completes.

Figure 16: Internal Configuration Register

the power-on phase or after a reset,

overwriting configuration register settings

on the internal configuration register.

WRITE VOLATILE OR ENHANCED VOLATILE

CONFIGURATION REGISTER command,

overwriting configuration register

settings on the internal configuration register.

Nonvolatile configuration register

Internal configuration

Device behavior

Volatile configuration register and

enhanced volatile configuration register

256Mb, 1.8V Multiple I/O Serial Flash Memory

Internal Configuration Register

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Nonvolatile Configuration Register

This register is read from and written to using the READ NONVOLATILE CONFIGURA-

TION REGISTER and the WRITE NONVOLATILE CONFIGURATION REGISTER com-

mands, respectively. A register download is executed during power-on or after reset,

overwriting the internal configuration register settings that determine device behavior.

Table 7: Nonvolatile Configuration Register

Bit Name Settings Description Notes

15:12 Number of

dummy clock cy-

cles

0000 = Identical to 1111

0001 = 1

0010 = 2

⋮

1101 = 13

1110 = 14

1111 = Default

Sets the number of dummy clock cycles subse-

quent to all FAST READ commands.

(See the Command Set Table for default setting

values.)

11:9 XIP mode at

power-on reset

000 = XIP: Fast read

001 = XIP: Dual output fast read

010 = XIP: Dual I/O fast read

011 = XIP: Quad output fast read

100 = XIP: Quad I/O fast read

101 = Reserved

110 = Reserved

111 = Disabled (Default)

Enables the device to operate in the selected XIP

mode immediately after power-on reset.

8:6 Output driver

strength

000 = Reserved

001 = 90 Ohms

010 = Reserved

011 = 45 Ohms

100 = Reserved

101 = 20 Ohms

110 = Reserved

111 = 30 Ohms (Default)

Optimizes the impedance at VCC/2 output volt-

age.

5 Double transfer

rate protocol

0 = Enabled

1 = Disabled (Default)

Set DTR protocol as current one. Once enabled,

all commands will work in DTR.

4 Reset/hold 0 = Disabled

1 = Enabled (Default)

Enables or disables HOLD# or RESET# on DQ3.

3 Quad I/O

protocol

0 = Enabled

1 = Disabled (Default)

Enables or disables quad I/O command input

(4-4-4 mode).

2 Dual I/O

protocol

0 = Enabled

1 = Disabled (Default)

Enables or disables dual I/O command input

(2-2-2 mode).

1 128Mb

segment select

0 = Highest 128Mb segment

1 = Lowest 128Mb segment (De-

fault)

Selects the power-on default 128Mb segment for

3-byte address operations. See also the extended

address register.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Nonvolatile Configuration Register

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Table 7: Nonvolatile Configuration Register (Continued)

Bit Name Settings Description Notes

0 Number of

address bytes

during command

entry

0 = Enable 4-byte address mode

1 = Enable 3-byte address mode

(Default)

Defines the number of address bytes for a com-

mand.

Notes: 1. The number of cycles must be set to accord with the clock frequency, which varies by the

type of FAST READ command (See Supported Clock Frequencies table). Insufficient dum-

my clock cycles for the operating frequency causes the memory to read incorrect data.

2. When bits 2 and 3 are both set to 0, the device operates in quad I/O protocol.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Nonvolatile Configuration Register

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Volatile Configuration Register

This register is read from and written to by the READ VOLATILE CONFIGURATION

tively. A register download is executed after these commands, overwriting the internal

configuration register settings that determine device memory behavior.

Table 8: Volatile Configuration Register

Bit Name Settings Description Notes

7:4 Number of

dummy clock

cycles

0000 = Identical to 1111

0001 = 1

0010 = 2

⋮

1101 = 13

1110 = 14

1111 = Default

Sets the number of dummy clock cycles subsequent to all

FAST READ commands.

(See the Command Set Table for default setting values.)

3 XIP 0 = Enable

1 = Disable (Default)

Enables or disables XIP.

2 Reserved 0 0b = Fixed value.

1:0 Wrap 00 = 16-byte boundary

aligned

16-byte wrap: Output data wraps within an aligned 16-byte

boundary starting from the 3-byte address issued after the

command code.

01 = 32-byte boundary

aligned

32-byte wrap: Output data wraps within an aligned 32-byte

boundary starting from the 3-byte address issued after the

command code.

10 = 64-byte boundary

aligned

64-byte wrap: Output data wraps within an aligned 64-byte

boundary starting from the 3-byte address issued after the

command code.

11 = Continuous (Default) Continuously sequences addresses through the entire array.

Notes: 1. The number of cycles must be set according to and sufficient for the clock frequency,

which varies by the type of FAST READ command, as shown in the Supported Clock Fre-

quencies table. An insufficient number of dummy clock cycles for the operating frequen-

cy causes the memory to read incorrect data.

2. See the Sequence of Bytes During Wrap table.

Table 9: Sequence of Bytes During Wrap

Starting Address 16-Byte Wrap 32-Byte Wrap 64-Byte Wrap

0 0-1-2- . . . -15-0-1- . . 0-1-2- . . . -31-0-1- . . 0-1-2- . . . -63-0-1- . .

1 1-2- . . . -15-0-1-2- . . 1-2- . . . -31-0-1-2- . . 1-2- . . . -63-0-1-2- . .

.... .... .... ....

15 15-0-1-2-3- . . . -15-0-1- . . 15-16-17- . . . -31-0-1- . . 15-16-17- . . . -63-0-1- . .

.... .... .... ....

31 – 31-0-1-2-3- . . . -31-0-1- . . 31-32-33- . . . -63-0-1- . .

.... .... .... ....

63 – – 63-0-1- . . . -63-0-1- . .

256Mb, 1.8V Multiple I/O Serial Flash Memory

Volatile Configuration Register

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Supported Clock Frequencies

Table 10: Clock Frequencies – STR (in MHz)

Notes apply to entire table

Number of

Dummy

Clock Cycles FAST READ

DUAL OUTPUT

FAST READ

DUAL I/O FAST

READ

QUAD OUTPUT

FAST READ

QUAD I/O FAST

READ

1 94 79 60 44 39

2 112 97 77 61 48

3 129 106 86 78 58

4 146 115 97 97 69

5 162 125 106 106 78

6 166 134 115 115 86

7 166 143 125 125 97

8 166 152 134 134 106

9 166 162 143 143 115

10 166 166 152 152 125

11 166 166 162 162 134

12 166 166 166 166 143

13 166 166 166 166 156

14 166 166 166 166 166

Notes: 1. Values are guaranteed by characterization and not 100% tested in production.

2. A tuning data pattern (TDP) capability provides applications with data patterns for ad-

justing the data latching point at the host end when the clock frequency is set higher

than 133 MHz in STR mode and higher than 66 MHz in double transfer rate (DTR) mode.

For additional details, refer to TN-25-07: Tuning Data Pattern for MT25Q and MT25T De-

vices.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Volatile Configuration Register

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Table 11: Clock Frequencies – DTR (in MHz)

Notes apply to entire table

Number of

Dummy

Clock Cycles FAST READ

DUAL OUTPUT

FAST READ

DUAL I/O FAST

READ

QUAD OUTPUT

FAST READ

QUAD I/O FAST

READ

1 59 45 40 26 20

2 73 59 49 40 30

3 82 68 59 59 39

4 90 76 65 65 49

5 90 83 75 75 58

6 90 90 83 83 68

7 90 90 90 90 78

8 90 90 90 90 85

9 90 90 90 90 90

10 : 14 90 90 90 90 90

Notes: 1. Values are guaranteed by characterization and not 100% tested in production.

2. A tuning data pattern (TDP) capability provides applications with data patterns for ad-

justing the data latching point at the host end when the clock frequency is set higher

than 133 MHz in STR mode and higher than 66 MHz in double transfer rate (DTR) mode.

For additional details, refer to TN-25-07: Tuning Data Pattern for MT25Q and MT25T De-

vices.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Volatile Configuration Register

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Enhanced Volatile Configuration Register

This register is read from and written to using the READ ENHANCED VOLATILE CON-

FIGURATION REGISTER and the WRITE ENHANCED VOLATILE CONFIGURATION

mands, overwriting the internal configuration register settings that determine device

memory behavior.

Table 12: Enhanced Volatile Configuration Register

Bit Name Settings Description Notes

7 Quad I/O protocol 0 = Enabled

1 = Disabled (Default)

Enables or disables quad I/O command input

(4-4-4 mode).

6 Dual I/O protocol 0 = Enabled

1 = Disabled (Default)

Enables or disables dual I/O command input

(2-2-2 mode).

5 Double transfer rate

protocol

0 = Enabled

1 = Disabled (Default,

single transfer rate)

Set DTR protocol as current one. Once enabled,

all commands will work in DTR.

4 Reset/hold 0 = Disabled

1 = Enabled (Default)

Enables or disables HOLD# or RESET# on DQ3.

(Available only on specified part numbers.)

3 Reserved 1

2:0 Output driver strength 000 = Reserved

001 = 90 ohms

010 = Reserved

011 = 45 ohms

100 = Reserved

101 = 20 ohms

110 = Reserved

111 = 30 ohms (De-

fault)

Optimizes the impedance at VCC/2 output volt-

age.

Note: 1. When bits 6 and 7 are both set to 0, the device operates in quad I/O protocol. When ei-

ther bit 6 or 7 is set to 0, the device operates in dual I/O or quad I/O respectively. When a

bit is set, the device enters the selected protocol immediately after the WRITE EN-

HANCED VOLATILE CONFIGURATION REGISTER command. The device returns to the de-

fault protocol after the next power-on or reset. Also, the rescue sequence or another

WRITE ENHANCED VOLATILE CONFIGURATION REGISTER command will return the de-

vice to the default protocol.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Enhanced Volatile Configuration Register

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Security Registers

Security registers enable sector and password protection on multiple levels using non-

volatile and volatile register and bit settings (shown below). The applicable register ta-

bles follow.

Figure 17: Sector and Password Protection

Sector Protection Register

15 1314 2 01

Global Freeze Bit

1st sector

2nd sector

3rd sector

Last sector

Memory Sectors

Volatile

Lock Bits

locked

Nonvolatile

Lock Bits

(See Note 1)

(See Note 2)

(See Note 3) (See Note 4)

Notes: 1. Sector protection register. This 16-bit nonvolatile register includes two active bits[2:1]

to enable sector and password protection.

2. Global freeze bit. This volatile bit protects the settings in all nonvolatile lock bits.

3. Nonvolatile lock bits. Each nonvolatile bit corresponds to and provides nonvolatile

protection for an individual memory sector, which remains locked (protection enabled)

until its corresponding bit is cleared to 1.

4. Volatile lock bits. Each volatile bit corresponds to and provides volatile protection for

an individual memory sector, which is locked temporarily (protection is cleared when the

device is reset or powered down).

5. The first and last sectors will have volatile protections at the 4KB subsector level. Each

4KB subsector in these sectors can be individually locked by volatile lock bits setting;

nonvolatile protections granularity remain at the sector level.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Security Registers

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Sector Protection Security Register

Table 13: Sector Protection Register

Bits Name Settings Description Notes

15:3 Reserved 1 = Default –

2 Password

protection

lock

1 = Disabled (Default)

0 = Enabled

Nonvolatile bit: When set to 1, password protection is dis-

abled. When set to 0, password protection is enabled per-

manently; the 64-bit password cannot be retrieved or reset.

1, 2

1 Sector

protection

lock

1 = Enabled, with password

protection (Default)

0 = Enabled, without pass-

word protection

Nonvolatile bit: When set to 1, nonvolatile lock bits can

be set to lock/unlock their corresponding memory sectors;

bit 2 can be set to 0, enabling password protection perma-

nently.

When set to 0, nonvolatile lock bits can be set to lock/

unlock their corresponding memory sectors; bit 2 must re-

main set to 1, disabling password protection permanently.

1, 3, 4

0 Reserved 1 = Default –

Notes: 1. Bits 2 and 1 are user-configurable, one-time-programmable, and mutually exclusive in

that only one of them can be set to 0. It is recommended that one of the bits be set to 0

when first programming the device.

2. The 64-bit password must be programmed and verified before this bit is set to 0 because

after it is set, password changes are not allowed, thus providing protection from mali-

cious software. When this bit is set to 0, a 64-bit password is required to reset the global

freeze bit from 0 to 1. In addition, if the password is incorrect or lost, the global freeze

bit can no longer be set and nonvolatile lock bits cannot be changed. (See the Sector

and Password Protection figure and the Global Freeze Bit Definition table).

3. Whether this bit is set to 1 or 0, it enables programming or erasing nonvolatile lock bits

(which provide memory sector protection). The password protection bit must be set be-

forehand because setting this bit will either enable password protection permanently

(bit 2 = 0) or disable password protection permanently (bit 1 = 0).

4. By default, all sectors are unlocked when the device is shipped from the factory. Sectors

are locked, unlocked, read, or locked down as explained in the Nonvolatile and Volatile

Lock Bits table and the Volatile Lock Bit Register Bit Definitions table.

Table 14: Global Freeze Bit

Bits Name Settings Description

7:1 Reserved 0 Bit values are 0

0 Global

freeze bit

1 = Disabled

(Default)

0 = Enabled

Volatile bit: When set to 1, all nonvolatile lock bits can be set to enable or

disable locking their corresponding memory sectors.

When set to 0, nonvolatile lock bits are protected from PROGRAM or ERASE

commands. This bit should not be set to 0 until the nonvolatile lock bits are

set.

Note: 1. The READ GLOBAL FREEZE BIT command enables reading this bit. When password pro-

tection is enabled, this bit is locked upon device power-up or reset. It cannot be

changed without the password. After the password is entered, the UNLOCK PASSWORD

command resets this bit to 1, enabling programing or erasing the nonvolatile lock bits.

After the bits are changed, the WRITE GLOBAL FREEZE BIT command sets this bit to 0,

protecting the nonvolatile lock bits from PROGRAM or ERASE operations.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Sector Protection Security Register

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Nonvolatile and Volatile Sector Lock Bits Security

Table 15: Nonvolatile and Volatile Lock Bits

Bit

Details Nonvolatile Lock Bit Volatile Lock Bit

Description Each sector of memory has one corresponding non-

volatile lock bit

Each sector of memory has one corresponding vola-

tile lock bit; this bit is the sector write lock bit descri-

bed in the Volatile Lock Bit Register table.

Function When set to 0, locks and protects its corresponding

memory sector from PROGRAM or ERASE operations.

Because this bit is nonvolatile, the sector remains

locked, protection enabled, until the bit is cleared to

When set to 1, locks and protects its corresponding

memory sector from PROGRAM or ERASE operations.

Because this bit is volatile, protection is temporary.

The sector is unlocked, protection disabled, upon de-

vice reset or power-down.

Settings 1 = Lock disabled

0 = Lock enabled

0 = Lock disabled

1 = Lock enabled

Enabling

protection

The bit is set to 0 by the WRITE NONVOLATILE LOCK

BITS command, enabling protection for designated

locked sectors. Programming a sector lock bit re-

quires the typical byte programming time.

The bit is set to 1 by the WRITE VOLATILE LOCK BITS

command, enabling protection for designated locked

sectors.

Disabling

protection

All bits are cleared to 1 by the ERASE NONVOLATILE

LOCK BITS command, unlocking and disabling pro-

tection for all sectors simultaneously. Erasing all sec-

tor lock bits requires typical sector erase time.

All bits are set to 0 upon reset or power-down, un-

locking and disabling protection for all sectors.

Reading

the bit

Bits are read by the READ NONVOLATILE LOCK BITS

command.

Bits are read by the READ VOLATILE LOCK BITS com-

mand.

Volatile Lock Bit Security Register

One volatile lock bit register is associated with each sector of memory. It enables the

sector to be locked, unlocked, or locked-down with the WRITE VOLATILE LOCK BITS

command, which executes only when sector lock down (bit 1) is set to 0. Each register

can be read with the READ VOLATILE LOCK BITS command. This register is compatible

with and provides the same locking capability as the lock register in the Micron N25Q

SPI NOR family.

Table 16: Volatile Lock Bit Register

Bit Name Settings Description

7:2 Reserved 0 Bit values are 0.

1 Sector

lock down

0 = Lock-down disabled (Default)

1 = Lock-down enabled

Volatile bit: Device always powers up with this bit set to 0 so that

sector lock down and sector write lock bits can be set to 1. When

this bit set to 1, neither of the two volatile lock bits can be written

to until the next power cycle, hardware, or software reset.

0 Sector

write lock

0 = Write lock disabled (Default)

1 = Write lock enabled

Volatile bit: Device always powers up with this bit set to 0 so that

PROGRAM and ERASE operations in this sector can be executed

and sector content modified. When this bit is set to 1, PROGRAM

and ERASE operations in this sector are not executed.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Nonvolatile and Volatile Sector Lock Bits Security

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Device ID Data

The device ID data shown in the tables here is read by the READ ID and MULTIPLE I/O

READ ID operations.

Table 17: Device ID Data

Byte# Name Content Value Assigned By

Manufacturer ID (1 byte total)

1 Manufacturer ID (1 byte) 20h JEDEC

Device ID (2 bytes total)

2 Memory type (1 byte) BAh = 3V Manufacturer

BBh = 1.8V

3 Memory capacity (1 byte) 22h = 2Gb

21h = 1Gb

20h = 512Mb

19h = 256Mb

18h = 128Mb

17h = 64Mb

Unique ID (17 bytes total)

4 Indicates the number of remaining ID bytes

(1 byte)

10h Factory

5 Extended device ID (1 byte) See Extended Device ID table

6 Device configuration information (1 byte) 00h = Standard

7:20 Customized factory data (14 bytes) Unique ID code (UID)

Table 18: Extended Device ID Data, First Byte

Bit 7 Bit 6 Bit 51Bit 4 Bit 3 Bit 22Bit 1 Bit 0

Reserved Device

Generation

1 = 2nd

generation

1 = Alternate BP

scheme

0 = Standard BP

scheme

Reserved HOLD#/RESET#:

0 = HOLD

1 = RESET

Additional HW

RESET#:

1 = Available

0 = Not available

Sector size:

00 = Uniform

64KB

Notes: 1. For alternate BP scheme information, contact the factory.

2. Available for specific part numbers. See Part Number Ordering Information for details.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Device ID Data

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Serial Flash Discovery Parameter Data

The serial Flash discovery parameter (SFDP) provides a standard, consistent method to

describe serial Flash device functions and features using internal parameter tables. The

parameter tables can be interrogated by host system software, enabling adjustments to

accommodate divergent features from multiple vendors. The SFDP standard defines a

common parameter table that describes important device characteristics and serial ac-

cess methods used to read the parameter table data.

Micron's SFDP table information aligns with JEDEC-standard JESD216 for serial Flash

discoverable parameters. The latest JEDEC standard includes revision 1.6. Beginning

week 42 (2014), Micron's MT25Q production parts will include SFDP data that aligns

with revision 1.6.

Refer to JEDEC-standard JESD216B for a complete overview of the SFDP table defini-

tion.

Data in the SFDP tables is read by the READ SERIAL FLASH DISCOVERY PARAMETER

operation.

See Micron TN-25-06: Serial Flash Discovery Parameters for MT25Q Family for serial

Flash discovery parameter data.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Serial Flash Discovery Parameter Data

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Command Definitions

Table 19: Command Set

Notes 1 and 2 apply to the entire table

Command Code

Command-Address-Data

Address

Bytes

Dummy Clock Cycles

Data

Bytes Notes

Extended

SPI

Dual

SPI

Quad

SPI

Extended

SPI

Dual

SPI

Quad

SPI

Software RESET Operations

RESET ENABLE 66h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –

RESET MEMORY 99h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –

READ ID Operations

READ ID 9E/9Fh 1-0-1 0 0 1 to 20 –

MULTIPLE I/O READ ID AFh 1-0-1 2-0-2 4-0-4 0 0 0 0 1 to 20 –

READ SERIAL FLASH DISCOVERY

PARAMETER

5Ah 1-1-1 2-2-2 4-4-4 3 8 8 8 1 to ∞3

READ MEMORY Operations

READ 03h 1-1-1 3(4) 0 0 0 1 to ∞4

FAST READ 0Bh 1-1-1 2-2-2 4-4-4 3(4) 8 8 10 1 to ∞4, 5

DUAL OUTPUT FAST READ 3Bh 1-1-2 2-2-2 3(4) 8 8 1 to ∞4, 5

DUAL INPUT/OUTPUT FAST READ BBh 1-2-2 2-2-2 3(4) 8 8 1 to ∞4, 5

QUAD OUTPUT FAST READ 6Bh 1-1-4 4-4-4 3(4) 8 10 1 to ∞4, 5

QUAD INPUT/OUTPUT FAST READ EBh 1-4-4 4-4-4 3(4) 10 10 1 to ∞4, 5

DTR FAST READ 0Dh 1-1-1 2-2-2 4-4-4 3(4) 6 6 8 1 to ∞4, 5

DTR DUAL OUTPUT FAST READ 3Dh 1-1-2 2-2-2 3(4) 6 6 1 to ∞4, 5

DTR DUAL INPUT/OUTPUT FAST

READ

BDh 1-2-2 2-2-2 3(4) 6 6 1 to ∞4, 5

DTR QUAD OUTPUT FAST READ 6Dh 1-1-4 4-4-4 3(4) 6 8 1 to ∞4, 5

DTR QUAD INPUT/OUTPUT FAST

READ

EDh 1-4-4 4-4-4 3(4) 8 8 1 to ∞4, 5

QUAD INPUT/OUTPUT WORD

READ

E7h 1-4-4 4-4-4 3(4) 4 4 1 to ∞4

READ MEMORY Operations with 4-Byte Address

4-BYTE READ 13h 1-1-1 4 0 0 0 1 to ∞5

4-BYTE FAST READ 0Ch 1-1-1 2-2-2 4-4-4 4 8 8 10 1 to ∞5

4-BYTE DUAL OUTPUT FAST READ 3Ch 1-1-2 2-2-2 4 8 8 1 to ∞5

256Mb, 1.8V Multiple I/O Serial Flash Memory

Command Definitions

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Table 19: Command Set (Continued)

Notes 1 and 2 apply to the entire table

Command Code

Command-Address-Data

Address

Bytes

Dummy Clock Cycles

Data

Bytes Notes

Extended

SPI

Dual

SPI

Quad

SPI

Extended

SPI

Dual

SPI

Quad

SPI

4-BYTE DUAL INPUT/OUTPUT

FAST READ

BCh 1-2-2 2-2-2 4 8 8 1 to ∞5

4-BYTE QUAD OUTPUT FAST

READ

6Ch 1-1-4 4-4-4 4 8 10 1 to ∞5

4-BYTE QUAD INPUT/OUTPUT

FAST READ

ECh 1-4-4 4-4-4 4 10 10 1 to ∞5

4-BYTE DTR FAST READ 0Eh 1-1-1 2-2-2 4-4-4 4 6 6 8 1 to ∞5

4-BYTE DTR DUAL INPUT/OUTPUT

FAST READ

BEh 1-2-2 2-2-2 4 6 6 1 to ∞5

4-BYTE DTR QUAD INPUT/

OUTPUT FAST READ

EEh 1-4-4 4-4-4 4 8 8 1 to ∞5

WRITE Operations

WRITE ENABLE 06h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –

WRITE DISABLE 04h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –

READ REGISTER Operations

READ STATUS REGISTER 05h 1-0-1 2-0-2 4-0-4 0 0 0 0 1 to ∞–

READ FLAG STATUS REGISTER 70h 1-0-1 2-0-2 4-0-4 0 0 0 0 1 to ∞–

READ NONVOLATILE CONFIGU-

RATION REGISTER

B5h 1-0-1 2-0-2 4-0-4 0 0 0 0 2 to ∞–

READ VOLATILE CONFIGURATION

85h 1-0-1 2-0-2 4-0-4 0 0 0 0 1 to ∞–

READ ENHANCED VOLATILE CON-

FIGURATION REGISTER

65h 1-0-1 2-0-2 4-0-4 0 0 0 0 1 to ∞–

READ EXTENDED ADDRESS REG-

ISTER

C8h 1-0-1 2-0-2 4-0-4 0 0 0 0 1 to ∞–

READ GENERAL PURPOSE READ

96h 1-0-1 2-0-2 4-0-4 0 8 8 8 1 to ∞6, 7

WRITE REGISTER Operations

WRITE STATUS REGISTER 01h 1-0-1 2-0-2 4-0-4 0 0 0 0 1 8

WRITE NONVOLATILE CONFIGU-

RATION REGISTER

B1h 1-0-1 2-0-2 4-0-4 0 0 0 0 2 8

256Mb, 1.8V Multiple I/O Serial Flash Memory

Command Definitions

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Table 19: Command Set (Continued)

Notes 1 and 2 apply to the entire table

Command Code

Command-Address-Data

Address

Bytes

Dummy Clock Cycles

Data

Bytes Notes

Extended

SPI

Dual

SPI

Quad

SPI

Extended

SPI

Dual

SPI

Quad

SPI

WRITE VOLATILE CONFIGURA-

TION REGISTER

81h 1-0-1 2-0-2 4-0-4 0 0 0 0 1 8

WRITE ENHANCED VOLATILE

CONFIGURATION REGISTER

61h 1-0-1 2-0-2 4-0-4 0 0 0 0 1 8

WRITE EXTENDED ADDRESS REG-

ISTER

C5h 1-0-1 2-0-2 4-0-4 0 0 0 0 1 8

CLEAR FLAG STATUS REGISTER Operation

CLEAR FLAG STATUS REGISTER 50h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –

PROGRAM Operations

PAGE PROGRAM 02h 1-1-1 2-2-2 4-4-4 3(4) 0 0 0 1 to 256 8

DUAL INPUT FAST PROGRAM A2h 1-1-2 2-2-2 3(4) 0 0 1 to 256 4, 8

EXTENDED DUAL INPUT FAST

PROGRAM

D2h 1-2-2 2-2-2 3(4) 0 0 1 to 256 4, 8

QUAD INPUT FAST PROGRAM 32h 1-1-4 4-4-4 3(4) 0 0 1 to 256 4, 8

EXTENDED QUAD INPUT FAST

PROGRAM

38h 1-4-4 4-4-4 3(4) 0 0 1 to 256 4, 8

PROGRAM Operations with 4-Byte Address

4-BYTE PAGE PROGRAM 12h 1-1-1 2-2-2 4-4-4 4 0 0 0 1 to 256 8

4-BYTE QUAD INPUT FAST PRO-

GRAM

34h 1-1-4 4-4-4 4 0 0 1 to 256 8

4-BYTE QUAD INPUT EXTENDED

FAST PROGRAM

3Eh 1-4-4 4-4-4 4 0 0 1 to 256 8

ERASE Operations

32KB SUBSECTOR ERASE 52h 1-1-0 2-2-0 4-4-0 3(4) 0 0 0 0 4, 8

4KB SUBSECTOR ERASE 20h 1-1-0 2-2-0 4-4-0 3(4) 0 0 0 0 4, 8

SECTOR ERASE D8h 1-1-0 2-2-0 4-4-0 3(4) 0 0 0 0 4, 8

BULK ERASE C7h/60h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 8

ERASE Operations with 4-Byte Address

4-BYTE SECTOR ERASE DCh 1-1-0 2-2-0 4-4-0 4 0 0 0 0 8

4-BYTE 4KB SUBSECTOR ERASE 21h 1-1-0 2-2-0 4-4-0 4 0 0 0 0 8

SUSPEND/RESUME Operations

256Mb, 1.8V Multiple I/O Serial Flash Memory

Command Definitions

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Table 19: Command Set (Continued)

Notes 1 and 2 apply to the entire table

Command Code

Command-Address-Data

Address

Bytes

Dummy Clock Cycles

Data

Bytes Notes

Extended

SPI

Dual

SPI

Quad

SPI

Extended

SPI

Dual

SPI

Quad

SPI

PROGRAM/ERASE SUSPEND 75h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –

PROGRAM/ERASE RESUME 7Ah 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –

ONE-TIME PROGRAMMABLE (OTP) Operations

READ OTP ARRAY 4Bh 1-1-1 2-2-2 4-4-4 3(4) 8 8 10 1 to 64 4, 5

PROGRAM OTP ARRAY 42h 1-1-1 2-2-2 4-4-4 3(4) 0 0 0 1 to 64 4, 8

4-BYTE ADDRESS MODE Operations

ENTER 4-BYTE ADDRESS MODE B7h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –

EXIT 4-BYTE ADDRESS MODE E9h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –

QUAD PROTOCOL Operations

ENTER QUAD INPUT/OUTPUT

MODE

35h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –

RESET QUAD INPUT/OUTPUT

MODE

F5h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –

Deep Power-Down Operations

ENTER DEEP POWER DOWN B9h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –

RELEASE FROM DEEP POWER-

DOWN

ABh 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –

ADVANCED SECTOR PROTECTION Operations

READ SECTOR PROTECTION 2Dh 1-0-1 2-0-2 4-0-4 0 0 0 0 1 to ∞–

PROGRAM SECTOR PROTECTION 2Ch 1-0-1 2-0-2 4-0-4 0 0 0 0 2 8

READ VOLATILE LOCK BITS E8h 1-1-1 2-2-2 4-4-4 3(4) 0 0 0 1 to ∞4, 9

WRITE VOLATILE LOCK BITS E5h 1-1-1 2-2-2 4-4-4 3(4) 0 0 0 1 4, 8, 10

READ NONVOLATILE LOCK BITS E2h 1-1-1 2-2-2 4-4-4 4 0 0 0 1 to ∞–

WRITE NONVOLATILE LOCK BITS E3h 1-1-0 2-2-0 4-4-0 4 0 0 0 0 8

ERASE NONVOLATILE LOCK BITS E4h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 8

READ GLOBAL FREEZE BIT A7h 1-0-1 0 0 0 0 1 to ∞–

WRITE GLOBAL FREEZE BIT A6h 1-0-0 2-0-0 4-0-0 0 0 0 0 0 8

READ PASSWORD 27h 1-0-1 0 0 0 0 1 to ∞–

WRITE PASSWORD 28h 1-0-1 2-0-2 4-0-4 0 0 0 0 8 8

UNLOCK PASSWORD 29h 1-0-1 2-0-2 4-0-4 0 0 0 0 8 –

256Mb, 1.8V Multiple I/O Serial Flash Memory

Command Definitions

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Table 19: Command Set (Continued)

Notes 1 and 2 apply to the entire table

Command Code

Command-Address-Data

Address

Bytes

Dummy Clock Cycles

Data

Bytes Notes

Extended

SPI

Dual

SPI

Quad

SPI

Extended

SPI

Dual

SPI

Quad

SPI

ADVANCED SECTOR PROTECTION Operations with 4-Byte Address

4-BYTE READ VOLATILE LOCK

BITS

E0h 1-1-1 2-2-2 4-4-4 4 0 0 0 1 to ∞–

4-BYTE WRITE VOLATILE LOCK

BITS

E1h 1-1-1 2-2-2 4-4-4 4 0 0 0 1 8

ADVANCED FUNCTION INTERFACE Operations

INTERFACE ACTIVATION 9Bh 1-0-0 2-0-0 4-0-0 0 0 0 0 0 –

CYCLIC REDUNDANCY CHECK 9Bh/27h 1-0-1 2-0-2 4-0-4 0 0 0 0 10 or 18 –

256Mb, 1.8V Multiple I/O Serial Flash Memory

Command Definitions

CCMTD-1725822587-3458

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Notes: 1. Micron extended SPI protocol is the standard SPI protocol with additional commands

that extend functionality and enable address or data transmission on multiple DQn

lines.

2. The command code is always transmitted on DQn = 1, 2, or 4 lines according to the

standard, dual, or quad protocol respectively. However, a command may be able to

transmit address and data on multiple DQn lines regardless of protocol. The protocol

columns show the number of DQn lines a command uses to transmit command, address,

and data information as shown in these examples: command-address-data = 1-1-1, or

1-2-2, or 2-4-4, and so on.

3. The READ SERIAL FLASH DISCOVERY PARAMETER operation accepts only 3-byte address

even if the device is configured to 4-byte address mode.

4. Requires 4 bytes of address if the device is configured to 4-byte address mode.

5. The number of dummy clock cycles required when shipped from Micron factories. The

user can modify the dummy clock cycle number via the nonvolatile configuration regis-

ter and the volatile configuration register.

6. The number of dummy cycles for the READ GENERAL PURPOSE READ REGISTER com-

mand is fixed (8 dummy cycles) and is not affected by dummy cycle settings in the non-

volatile configuration register and volatile configuration register.

7. The general purpose read register is 64 bytes. After the first 64 bytes, the device outputs

00h and does not wrap.

8. The WRITE ENABLE command must be issued first before this operation can be execu-

ted.

9. Formerly referred to as the READ LOCK REGISTER operation.

10. Formerly referred to as the WRITE LOCK REGISTER operation.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Command Definitions

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Software RESET Operations

RESET ENABLE and RESET MEMORY Commands

To initiate these commands, S# is driven LOW and the command code is input on DQn.

A minimum de-selection time of tSHSL2 must come between RESET ENABLE and RE-

SET MEMORY or reset is not guaranteed. Then, S# must be driven HIGH for the device

to enter power-on reset. A time of tSHSL3 is required before the device can be re-selec-

ted by driving S# LOW.

Table 20: RESET ENABLE and RESET MEMORY Operations

Operation Name Description/Conditions

RESET ENABLE (66h) To reset the device, the RESET ENABLE command must be followed by the RESET MEMORY

command. When the two commands are executed, the device enters a power-on reset con-

dition. It is recommended to exit XIP mode before executing these two commands.

All volatile lock bits, the volatile configuration register, the enhanced volatile configura-

tion register, and the extended address register are reset to the power-on reset default

condition according to nonvolatile configuration register settings.

If a reset is initiated while a WRITE, PROGRAM, or ERASE operation is in progress or sus-

pended, the operation is aborted and data may be corrupted.

Reset is effective after the flag status register bit 7 outputs 1 with at least one byte output.

A RESET ENABLE command is not accepted during WRITE STATUS REGISTER and WRITE

NONVOLATILE CONFIGURATION REGISTER operations.

RESET MEMORY (99h)

Figure 18: RESET ENABLE and RESET MEMORY Command

DQ0

01234567 01234567

Reset enable Reset memory

Note: 1. Above timing diagram is showed for Extended-SPI Protocol case, however these com-

mands are available in all protocols. In DIO-SPI protocol, the instruction bits are trans-

mitted on both DQ0 and DQ1 pins. In QIO-SPI protocol the instruction bits are transmit-

ted on all four data pins. In Extended-DTR-SPI protocol, the instruction bits are transmit-

ted on DQ0 pin in double transfer rate mode. In DIO-DTR-SPI protocol, the instruction

bits are transmitted on both DQ0 and DQ1 pins in double transfer rate mode. In QIO-

DTR-SPI protocol, the instruction bits are transmitted on all four data pins in double

transfer rate mode.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Software RESET Operations

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READ ID Operations

READ ID and MULTIPLE I/O READ ID Commands

To initiate these commands, S# is driven LOW and the command code is input on DQn.

When S# is driven HIGH, the device goes to standby. The operation is terminated by

driving S# HIGH at any time during data output.

Table 21: READ ID and MULTIPLE I/O READ ID Operations

Operation Name Description/Conditions

READ ID (9Eh/9Fh) Outputs information shown in the Device ID Data tables. If an ERASE or PROGRAM cycle is

in progress when the command is initiated, the command is not decoded and the com-

mand cycle in progress is not affected.

MULTIPLE I/O READ ID (AFh)

Figure 19: READ ID and MULTIPLE I/O READ ID Commands

UID

Device

identification

Manufacturer

identification

High-Z

DQ1

MSB MSB

DOUT DOUT DOUT DOUT

LSB

7 8 15 16 32

MSB

DQ0

LSB

Command

MSB

DOUT DOUT

LSB

Extended (READ ID)

Dual (MULTIPLE I/O READ ID )

Quad (MULTIPLE I/O READ ID )

Don’t Care

3 4 7815

MSB

DQ[1:0]

LSB

Command

Device

identification

Manufacturer

identification

MSB MSB

DOUT DOUT DOUT DOUT

LSB

1 2 347

MSB

DQ[3:0]

LSB

Command

Device

identification

Manufacturer

identification

MSB MSB

DOUT DOUT DOUT DOUT

LSB

Note: 1. S# not shown.

256Mb, 1.8V Multiple I/O Serial Flash Memory

READ ID Operations

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READ SERIAL FLASH DISCOVERY PARAMETER Operation

READ SERIAL FLASH DISCOVERY PARAMETER Command

To execute READ SERIAL FLASH DISCOVERY PARAMETER command, S# is driven

LOW. The command code is input on DQ0, followed by three address bytes and eight

dummy clock cycles (address is always 3 bytes, even if the device is configured to work

in 4-byte address mode). The device outputs the information starting from the specified

address. When the 2048-byte boundary is reached, the data output wraps to address 0 of

the serial Flash discovery parameter table. The operation is terminated by driving S#

HIGH at any time during data output.

Note: The operation always executes in continuous mode so the read burst wrap setting

in the volatile configuration register does not apply.

Figure 20: READ SERIAL FLASH DISCOVERY PARAMETER Command – 5Ah

7 8 Cx

MSB

DQ0

LSB

Command

A[MAX]

A[MIN]

3 4 Cx

MSB

DQ[1:0]

LSB

Command

A[MAX]

A[MIN]

MSB

DOUT DOUT DOUT DOUT DOUT

LSB

Dummy cycles

1 2 Cx

MSB

DQ[3:0]

LSB

Command

A[MAX]

A[MIN]

MSB

DOUT DOUT DOUT

LSB

Dummy cycles

Extended

MSB

DOUT DOUT DOUT DOUT DOUT

LSB

DOUT DOUT DOUT DOUT

Dummy cycles

Dual

Quad

DQ1 High-Z

Don’t Care

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1); For dual protocol, Cx = 3 + (A[MAX] + 1)/2;

For quad protocol, Cx = 1 + (A[MAX] + 1)/4.

2. S# not shown.

256Mb, 1.8V Multiple I/O Serial Flash Memory

READ SERIAL FLASH DISCOVERY PARAMETER Operation

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READ MEMORY Operations

To initiate a command, S# is driven LOW and the command code is input on DQn, fol-

lowed by input of the address bytes on DQn. The operation is terminated by driving S#

HIGH at any time during data output.

Table 22: READ MEMORY Operations

Operation Name Description/Conditions

READ (03h) The device supports 3-byte addressing (default), with A[23:0] input during

address cycle. After any READ command is executed, the device will out-

put data from the selected address. After the boundary is reached, the

device will start reading again from the beginning.

Each address bit is latched in during the rising edge of the clock. The ad-

dressed byte can be at any location, and the address automatically incre-

ments to the next address after each byte of data is shifted out; there-

fore, a die can be read with a single command.

FAST READ can operate at a higher frequency (fC).

DTR commands function in DTR protocol regardless of settings in the

nonvolatile configuration register or enhanced volatile configuration reg-

ister; other commands function in DTR protocol only after DTR protocol is

enabled by the register settings.

E7h is similar to the QUAD I/O FAST READ command except that the low-

est address bit (A0) must equal 0 and only four dummy clocks are re-

quired prior to the data output. This command is supported in extended-

SPI and quad-SPI protocols, but not in the DTR protocol; it is ignored it in

dual-SPI protocol.

FAST READ (0Bh)

DUAL OUTPUT FAST READ (3Bh)

DUAL INPUT/OUTPUT FAST READ (BBh)

QUAD OUTPUT FAST READ (6Bh)

QUAD INPUT/OUTPUT FAST READ (EBh)

DTR FAST READ (0Dh)

DTR DUAL OUTPUT FAST READ (3Dh)

DTR DUAL INPUT/OUTPUT FAST READ (BDh)

DTR QUAD OUTPUT FAST READ (6Dh)

DTR QUAD INPUT/OUTPUT FAST READ (EDh)

QUAD INPUT/OUTPUT WORD READ (E7h)

256Mb, 1.8V Multiple I/O Serial Flash Memory

READ MEMORY Operations

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4-BYTE READ MEMORY Operations

Table 23: 4-BYTE READ MEMORY Operations

Operation Name Description/Conditions

4-BYTE READ (13h) READ MEMORY operations can be extended to a 4-byte address range,

with [A31:0] input during address cycle.

Selection of the 3-byte or 4-byte address range can be enabled in two

ways: through the nonvolatile configuration register or through the ENA-

BLE 4-BYTE ADDRESS MODE/EXIT 4-BYTE ADDRESS MODE commands.

Each address bit is latched in during the rising edge of the clock. The ad-

dressed byte can be at any location, and the address automatically incre-

ments to the next address after each byte of data is shifted out; there-

fore, a die can be read with a single command.

FAST READ can operate at a higher frequency (fC).

4-BYTE commands and DTR 4-BYTE commands function in 4-BYTE and

DTR 4-BYTE protocols regardless of settings in the nonvolatile configura-

tion register or enhanced volatile configuration register; other commands

function in 4-BYTE and DTR protocols only after the specific protocol is

enabled by the register settings.

4-BYTE FAST READ (0Ch)

4-BYTE DUAL OUTPUT FAST READ (3Ch)

4-BYTE DUAL INPUT/OUTPUT FAST READ (BCh)

4-BYTE QUAD OUTPUT FAST READ (6Ch)

4-BYTE QUAD INPUT/OUTPUT FAST READ

(ECh)

DTR 4-BYTE FAST READ (0Eh)

DTR 4-BYTE DUAL INPUT/OUTPUT FAST READ

(BEh)

DTR 4-BYTE QUAD INPUT/OUTPUT FAST READ

(EEh)

256Mb, 1.8V Multiple I/O Serial Flash Memory

4-BYTE READ MEMORY Operations

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READ MEMORY Operations Timings

Figure 21: READ – 03h/13h3

Don’t Care

MSB

DQ[0]

LSB

Command

A[MAX]

A[MIN]

7 8 Cx

Extended

High-Z

DQ1

MSB

DOUT DOUT DOUT DOUT DOUT

LSB

DOUT DOUT DOUT DOUT

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1); For dual protocol, Cx = 3 + (A[MAX] + 1)/2;

For quad protocol, Cx = 1 + (A[MAX] + 1)/4.

2. S# not shown.

3. READ and 4-BYTE READ commands.

Figure 22: FAST READ – 0Bh/0Ch3

7 8 Cx

MSB

DQ0

LSB

Command

A[MAX]

A[MIN]

3 4 Cx

MSB

DQ[1:0]

LSB

Command

A[MAX]

A[MIN]

MSB

DOUT DOUT DOUT DOUT DOUT

LSB

Dummy cycles

1 2 Cx

MSB

DQ[3:0]

LSB

Command

A[MAX]

A[MIN]

MSB

DOUT DOUT DOUT

LSB

Dummy cycles

Extended

MSB

DOUT DOUT DOUT DOUT DOUT

LSB

DOUT DOUT DOUT DOUT

Dummy cycles

Dual

Quad

DQ1 High-Z

Don’t Care

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1); For dual protocol, Cx = 3 + (A[MAX] + 1)/2;

For quad protocol, Cx = 1 + (A[MAX] + 1)/4.

2. S# not shown.

3. FAST READ and 4-BYTE FAST READ commands.

256Mb, 1.8V Multiple I/O Serial Flash Memory

READ MEMORY Operations Timings

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Figure 23: DUAL OUTPUT FAST READ – 3Bh/3Ch3

7 8 Cx

MSB

DQ0

LSB

Command DOUT

LSB

DQ1 DOUT

A[MAX]

High-Z

A[MIN]

DOUT

MSB

DOUT

Dummy cycles

DQ[1:0]

Dual

Extended

3 4 Cx

MSB

LSB

Command

A[MAX]

A[MIN]

MSB

DOUT DOUT DOUT DOUT DOUT

LSB

Dummy cycles

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1); For dual protocol, Cx = 3 + (A[MAX] + 1)/2.

2. S# not shown.

3. DUAL OUTPUT FAST READ and 4-BYTE DUAL OUTPUT FAST READ commands.

Figure 24: DUAL INPUT/OUTPUT FAST READ – BBh/BCh3

7 8 Cx

MSB

DQ0

LSB

Command DOUT

LSB

DQ1 DOUT

High-Z

A[MIN]

DOUT

MSB

DOUT

A[MAX]

Dummy cycles

3 4 Cx

MSB

DQ[1:0]

LSB

Command

A[MAX]

A[MIN]

MSB

DOUT DOUT DOUT DOUT DOUT

LSB

Dummy cycles

Dual

Extended

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1)/2; For dual protocol,

Cx = 3 + (A[MAX] + 1)/2.

2. S# not shown.

3. DUAL INPUT/OUTPUT FAST READ and 4-BYTE DUAL INPUT/OUTPUT FAST READ com-

mands.

256Mb, 1.8V Multiple I/O Serial Flash Memory

READ MEMORY Operations Timings

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Figure 25: QUAD OUTPUT FAST READ – 6Bh/6Ch3

Dummy cycles

7 8 Cx

MSB

DQ0

LSB

Command DOUT

LSB

DQ[2:1] DOUT

A[MAX]

High-Z

A[MIN]

DOUT

DQ3 DOUT

‘1’

MSB

DOUT DOUT

1 2 Cx

MSB

DQ[3:0]

LSB

Command

A[MAX]

A[MIN]

MSB

DOUT DOUT DOUT

LSB

Dummy cycles

Quad

Extended

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1); For quad protocol,

Cx = 1 + (A[MAX] + 1)/4.

2. S# not shown.

3. QUAD OUTPUT FAST READ and 4-BYTE QUAD OUTPUT FAST READ commands.

Figure 26: QUAD INPUT/OUTPUT FAST READ – EBh/ECh3

Dummy cycles

7 8 Cx

MSB

DQ0

LSB

Command DOUT

LSB

DQ[2:1] DOUT

High-Z

A[MIN]

DOUT

DQ3 DOUT

‘1’

MSB

DOUT DOUT

A[MAX]

1 2 Cx

MSB

DQ[3:0]

LSB

Command

A[MAX]

A[MIN]

MSB

DOUT DOUT DOUT

LSB

Dummy cycles

Quad

Extended

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1)/4; For quad protocol,

Cx = 1 + (A[MAX] + 1)/4.

2. S# not shown.

256Mb, 1.8V Multiple I/O Serial Flash Memory

READ MEMORY Operations Timings

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3. QUAD INPUT/OUTPUT FAST READ and 4-BYTE QUAD INPUT/OUTPUT FAST READ com-

mands.

Figure 27: QUAD INPUT/OUTPUT WORD READ – E7h3

Four dummy cycles

7 8 Cx

MSB

DQ0

Extended

LSB

Command DOUT

LSB

DQ[3:1] DOUT

High-Z

A[MIN]

DOUT

MSB

A[MAX]

1 2 Cx

MSB

DQ[3:0]

LSB

Command

A[MAX]

A[MIN]

MSB

DOUT DOUT DOUT

LSB

Dummy cycles

Quad

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1)/4; For quad protocol,

Cx = 1 + (A[MAX] + 1)/4.

2. S# not shown.

3. QUAD INPUT/OUTPUT WORD READ and 4-BYTE QUAD INPUT/OUTPUT WORD READ

commands.

256Mb, 1.8V Multiple I/O Serial Flash Memory

READ MEMORY Operations Timings

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Figure 28: DTR FAST READ – 0Dh/0Eh3

7 8 Cx

MSB

DQ0

LSB

Command

A[MAX]

A[MIN]

3 4 Cx

MSB

DQ[1:0]

LSB

Command

A[MAX]

A[MIN]

MSB

LSB

Dummy cycles

1 2 Cx

MSB

DQ[3:0]

LSB

Command

A[MAX]

A[MIN]

MSB

LSB

Dummy cycles

Extended

MSB

LSB

Dummy cycles

Dual

Quad

DQ1 High-Z

Don’t Care

DOUT

DOUT DOUT DOUT DOUT DOUT DOUT DOUT DOUT

DOUT

DOUT DOUT DOUT DOUT DOUT DOUT DOUT

DOUT

DOUT DOUT DOUT

DOUT DOUT DOUT DOUT DOUT DOUT DOUT

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1)/2; For dual protocol,

Cx = 3 + (A[MAX] + 1)/4; For quad protocol, Cx = 1 + (A[MAX] + 1)/8.

2. S# not shown.

3. DTR FAST READ and 4-BYTE DTR FAST READ commands.

Figure 29: DTR DUAL OUTPUT FAST READ – 3Dh3

7 8 Cx

DQ0

LSB

DQ1

Extended

A[MAX]

High-Z

A[MIN]

MSB

Dummy cycles

DOUT

DOUT DOUT DOUT DOUT DOUT DOUT DOUT

DOUT

DOUT DOUT DOUT DOUT DOUT DOUT DOUT

MSB

LSB

DOUT

DOUT DOUT DOUT DOUT DOUT DOUT DOUT

3 4 Cx

MSB

DQ[1:0]

LSB

Command

MSB

LSB

Command

A[MAX]

A[MIN]

Dummy cycles

Dual

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1)/2; For dual protocol,

Cx = 3 + (A[MAX] + 1)/4.

2. S# not shown.

3. DTR DUAL OUTPUT FAST READ and 4-BYTE DTR DUAL OUTPUT FAST READ commands.

256Mb, 1.8V Multiple I/O Serial Flash Memory

READ MEMORY Operations Timings

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Figure 30: DTR DUAL INPUT/OUTPUT FAST READ – BDh3

DQ0

DQ1

7 8 Cx

MSB

LSB

Command DOUT

LSB

DOUT

High-Z

A[MIN]

DOUT

MSB

DOUT

A[MAX]

Dummy cycles

Dual

DQ[1:0]

3 4 Cx

MSB

LSB

Command

A[MAX]

A[MIN]

MSB

LSB

Dummy cycles

DOUT

DOUT DOUT DOUT DOUT DOUT DOUT DOUT

Extended

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1)/4; For dual protocol,

Cx = 3 + (A[MAX] + 1)/8.

2. S# not shown.

3. DTR DUAL INPUT/OUTPUT FAST READ and 4-BYTE DTR DUAL INPUT/OUTPUT FAST READ

commands.

256Mb, 1.8V Multiple I/O Serial Flash Memory

READ MEMORY Operations Timings

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Figure 31: DTR QUAD OUTPUT FAST READ – 6Dh3

DQ0

DQ[2:1]

DQ3

Dummy cycles

7 8 Cx

MSB

LSB

Command

LSB

A[MAX]

High-Z

A[MIN]

‘1’

MSB

DOUT

DOUT DOUT DOUT

DOUT

DOUT DOUT DOUT

DOUT

DOUT DOUT DOUT

DQ[3:0]

Quad

Extended

1 2 Cx

MSB

LSB

Command

A[MAX]

A[MIN]

MSB

LSB

Dummy cycles

DOUT

DOUT DOUT DOUT

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1)/2; For quad protocol,

Cx = 1 + (A[MAX] + 1)/8.

2. S# not shown.

3. DTR QUAD OUTPUT FAST READ and 4-BYTE DTR QUAD OUTPUT FAST READ commands.

Figure 32: DTR QUAD INPUT/OUTPUT FAST READ – EDh3

DQ0

DQ[2:1]

Extended

DQ3

Dummy cycles

7 8 Cx

MSB

LSB

Command

LSB

High-Z

A[MIN]

‘1’

MSB

A[MAX]

DOUT

DOUT DOUT DOUT

DOUT

DOUT DOUT DOUT

DOUT

DOUT DOUT DOUT

DQ[3:0]

Quad 1 2 Cx

MSB

LSB

Command

A[MAX]

A[MIN]

MSB

LSB

Dummy cycles

DOUT

DOUT DOUT DOUT

Notes: 1. For extended protocol, Cx = 7 + (A[MAX] + 1)/8; For quad protocol,

Cx = 1 + (A[MAX] + 1)/8.

2. S# not shown.

3. DTR QUAD INPUT/OUTPUT FAST READ and 4-BYTE DTR QUAD INPUT/OUTPUT FAST

READ commands.

256Mb, 1.8V Multiple I/O Serial Flash Memory

READ MEMORY Operations Timings

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WRITE ENABLE/DISABLE Operations

To initiate a command, S# is driven LOW and held LOW until the eighth bit of the com-

mand code has been latched in, after which it must be driven HIGH. For extended-, du-

al-, and quad-SPI protocols respectively, the command code is input on DQ0, DQ[1:0],

and DQ[3:0]. If S# is not driven HIGH after the command code has been latched in, the

command is not executed, flag status register error bits are not set, and the write enable

latch remains cleared to its default setting of 0, providing protection against errant data

modification.

Table 24: WRITE ENABLE/DISABLE Operations

Operation Name Description/Conditions

WRITE ENABLE (06h) Sets the write enable latch bit before each PROGRAM, ERASE, and WRITE command.

WRITE DISABLE (04h) Clears the write enable latch bit. In case of a protection error, WRITE DISABLE will not clear the

bit. Instead, a CLEAR FLAG STATUS REGISTER command must be issued to clear both flags.

Figure 33: WRITE ENABLE and WRITE DISABLE Timing

DQ0

MSB

LSB

Dual

Don’t Care

Command Bits

DQ0

01 2 4 53 76

Extended

High-Z

DQ1

MSB

LSB

0 0 0 0 0 011

Command Bits

0 0 1 0

MSB

LSB

DQ1

DQ2

Quad

Command Bits

DQ3 0 0

DQ0 0 0

DQ1 0 0 0 1

1 2

Note: 1. WRITE ENABLE command sequence and code, shown here, is 06h (0000 0110 binary);

WRITE DISABLE is identical, but its command code is 04h (0000 0100 binary).

256Mb, 1.8V Multiple I/O Serial Flash Memory

WRITE ENABLE/DISABLE Operations

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READ REGISTER Operations

To initiate a command, S# is driven LOW. For extended SPI protocol, input is on DQ0,

output on DQ1. For dual SPI protocol, input/output is on DQ[1:0] and for quad SPI pro-

tocol, input/output is on DQ[3:0]. The operation is terminated by driving S# HIGH at

any time during data output.

Table 25: READ REGISTER Operations

Operation Name Description/Conditions Note

READ STATUS REGISTER (05h) Can be read continuously and at any time, including during a PRO-

GRAM, ERASE, or WRITE operation. If one of these operations is in

progress, checking the write in progress bit or P/E controller bit is

recommended before executing the command.

READ FLAG STATUS REGISTER (70h)

READ NONVOLATILE CONFIGURATION

Can be read continuously. After all 16 bits of the register have been

read, a 0 is output. All reserved fields output a value of 1.

READ VOLATILE CONFIGURATION REGIS-

TER (85h)

When the register is read continuously, the same byte is output re-

peatedly.

READ ENHANCED VOLATILE CONFIGURA-

TION REGISTER (65h)

READ EXTENDED ADDRESS REGISTER (C8h)

Note: 1. The operation will have output data starting from the least significant byte.

Figure 34: READ REGISTER Timing

High-Z

DQ1

7 8 910 11 12 13 14 15

MSB

DQ0

LSB

Command

3 4 5 6 7

MSB

DQ[1:0]

LSB

Command

MSB

DOUT DOUT DOUT DOUT DOUT

LSB

Extended

MSB

DOUT DOUT DOUT DOUT DOUT

LSB

DOUT DOUT DOUT DOUT

Dual

Quad 1 2 3

MSB

DQ[3:0]

LSB

Command

MSB

DOUT DOUT DOUT

LSB

Don’t Care

Notes: 1. Supports all READ REGISTER commands except DYNAMIC PROTECTION BITS READ.

256Mb, 1.8V Multiple I/O Serial Flash Memory

READ REGISTER Operations

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2. A READ NONVOLATILE CONFIGURATION REGISTER operation will output data starting

from the least significant byte.

3. S# not shown.

WRITE REGISTER Operations

Before a WRITE REGISTER command is initiated, the WRITE ENABLE command must

be executed to set the write enable latch bit to 1. To initiate a command, S# is driven

LOW and held LOW until the eighth bit of the last data byte has been latched in, after

which it must be driven HIGH; for the WRITE NONVOLATILE CONFIGURATION REG-

ISTER command, S# is held LOW until the 16th bit of the last data byte has been latched

in. For the extended, dual, and quad SPI protocols respectively, input is on DQ0,

DQ[1:0], and DQ[3:0], followed by the data bytes. If S# is not driven HIGH, the com-

mand is not executed, flag status register error bits are not set, and the write enable

latch remains set to 1. The operation is self-timed and its duration is tW for WRITE STA-

TUS REGISTER and tNVCR for WRITE NONVOLATILE CONFIGURATION REGISTER.

Table 26: WRITE REGISTER Operations

Operation Name Description/Conditions Note

WRITE STATUS REGISTER (01h) The WRITE STATUS REGISTER command writes new values to status

ister can also be combined with the W# signal to provide hardware

data protection. This command has no effect on status register bits

1:0.

WRITE NONVOLATILE CONFIGURATION

For the WRITE STATUS REGISTER and WRITE NONVOLATILE CONFIG-

URATION REGISTER commands, when the operation is in progress,

the write in progress bit is set to 1. The write enable latch bit is

cleared to 0, whether the operation is successful or not. The status

tus. When the operation completes, the write in progress bit is

cleared to 0, whether the operation is successful or not.

WRITE VOLATILE CONFIGURATION REGIS-

TER (81h)

Because register bits are volatile, change to the bits is immediate.

Reserved bits are not affected by this command.

WRITE ENHANCED VOLATILE CONFIGURA-

TION REGISTER (61h)

WRITE EXTENDED ADDRESS REGISTER

(C5h)

Note: 1. The WRITE NONVOLATILE CONFIGURATION REGISTER operation must have input data

starting from the least significant byte.

256Mb, 1.8V Multiple I/O Serial Flash Memory

WRITE REGISTER Operations

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Figure 35: WRITE REGISTER Timing

7 8 9 10 11 12 13 14 15

MSB

DQ0

LSB

Command

3 4 5 6 7

MSB

DQ[1:0]

LSB

Command

MSB

DIN DIN DIN DIN DIN

LSB

Extended

MSB

LSB

DIN DIN DIN DIN DIN

DIN DIN DIN DIN

Dual

Quad 1 2 3

MSB

DQ[3:0]

LSB

Command

MSB

DIN DIN DIN

LSB

Notes: 1. Supports all WRITE REGISTER commands except WRITE LOCK REGISTER.

2. Data is two bytes for a WRITE NONVOLATILE CONFIGURATION REGISTER operation, in-

put starting from the least significant byte.

3. S# not shown.

256Mb, 1.8V Multiple I/O Serial Flash Memory

WRITE REGISTER Operations

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CLEAR FLAG STATUS REGISTER Operation

To initiate a command, S# is driven LOW. For the extended-, dual-, and quad-SPI proto-

cols respectively, input is on DQ0, DQ[1:0], and DQ[3:0]. The operation is terminated by

driving S# HIGH at any time.

Table 27: CLEAR FLAG STATUS REGISTER Operation

Operation Name Description/Conditions

CLEAR FLAG STATUS

Resets the error bits (erase, program, and protection)

Figure 36: CLEAR FLAG STATUS REGISTER Timing

MSB

DQ0

LSB

Command

MSB

DQ[1:0]

LSB

Command

MSB

DQ[3:0]

LSB

Command

Extended

Dual

Quad

Note: 1. S# not shown.

256Mb, 1.8V Multiple I/O Serial Flash Memory

CLEAR FLAG STATUS REGISTER Operation

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PROGRAM Operations

Before a PROGRAM command is initiated, the WRITE ENABLE command must be exe-

cuted to set the write enable latch bit to 1. To initiate a command, S# is driven LOW and

held LOW until the eighth bit of the last data byte has been latched in, after which it

must be driven HIGH. If S# is not driven HIGH, the command is not executed, flag sta-

tus register error bits are not set, and the write enable latch remains set to 1. Each ad-

dress bit is latched in during the rising edge of the clock. When a command is applied to

a protected sector, the command is not executed, the write enable latch bit remains set

to 1, and flag status register bits 1 and 4 are set. If the operation times out, the write ena-

ble latch bit is reset and the program fail bit is set to 1.

Note: The manner of latching data shown and explained in the timing diagrams ensures

that the number of clock pulses is a multiple of one byte before command execution,

helping reduce the effects of noisy or undesirable signals and enhancing device data

protection.

Table 28: PROGRAM Operations

Operation Name Description/Conditions

PAGE PROGRAM (02h) A PROGRAM operation changes a bit from 1 to 0.

When the operation is in progress, the write in progress bit is set to 1.

The write enable latch bit is cleared to 0, whether the operation is suc-

cessful or not. The status register and flag status register can be polled

for the operation status. When the operation completes, the write in

progress bit is cleared to 0. An operation can be paused or resumed by

the PROGRAM/ERASE SUSPEND or PROGRAM/ERASE RESUME command,

respectively.

If the bits of the least significant address, which is the starting address,

are not all zero, all data transmitted beyond the end of the current

page is programmed from the starting address of the same page. If the

number of bytes sent to the device exceed the maximum page size, pre-

viously latched data is discarded and only the last maximum page-size

number of data bytes are guaranteed to be programmed correctly with-

in the same page. If the number of bytes sent to the device is less than

the maximum page size, they are correctly programmed at the specified

addresses without any effect on the other bytes of the same page.

DUAL INPUT FAST PROGRAM (A2h)

EXTENDED DUAL INPUT FAST PROGRAM (D2h)

QUAD INPUT FAST PROGRAM (32h)

EXTENDED QUAD INPUT FAST PROGRAM (38h)

256Mb, 1.8V Multiple I/O Serial Flash Memory

PROGRAM Operations

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4-BYTE PROGRAM Operations

Table 29: 4-BYTE PROGRAM Operations

Operation Name Description/Conditions

4-BYTE PAGE PROGRAM (12h) PROGRAM operations can be extended to a 4-byte address range, with

[A31:0] input during address cycle.

Selection of the 3-byte or 4-byte address range can be enabled in two

ways: through the nonvolatile configuration register or through the EN-

ABLE 4-BYTE ADDRESS MODE/EXIT 4-BYTE ADDRESS MODE commands.

4-BYTE commands and DTR 4-BYTE commands function in 4-BYTE and

DTR 4-BYTE protocol regardless of settings in the nonvolatile configura-

tion register or enhanced volatile configuration register; other com-

mands function in 4-BYTE and DTR protocols only after the specific pro-

tocol is enabled by the register settings.

4-BYTE QUAD INPUT FAST PROGRAM (34h)

4-BYTE EXTENDED QUAD INPUT FAST PRO-

GRAM (3Eh)

PROGRAM Operations Timings

Figure 37: PAGE PROGRAM Command

7 8 Cx

MSB

DQ0

LSB

Command

A[MAX]

A[MIN]

MSB

DIN DIN DIN DIN DIN

LSB

DIN DIN DIN DIN

3 4 Cx

MSB

DQ[1:0]

LSB

Command

A[MAX]

A[MIN]

MSB

DIN DIN DIN DIN DIN

LSB

1 2 Cx

MSB

DQ[3:0]

LSB

Command

A[MAX]

A[MIN]

MSB

DIN DIN DIN

LSB

Extended

Dual

Quad

Notes: 1. For extended-SPI protocol, Cx = 7 + (A[MAX] + 1); For dual-SPI protocol,

Cx = 3 + (A[MAX] + 1)/2; For quad-SPI protocol, Cx = 1 + (A[MAX] + 1)/4.

2. S# not shown. The operation is self-timed, and its duration is tPP.

256Mb, 1.8V Multiple I/O Serial Flash Memory

4-BYTE PROGRAM Operations

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Figure 38: DUAL INPUT FAST PROGRAM Command

Extended

Dual 3 4 Cx

MSB

DQ[1:0]

LSB

Command DIN

LSB

A[MAX]

A[MIN]

MSB

DIN DIN DIN DIN

7 8 Cx

MSB

DQ0

LSB

Command DIN

LSB

DQ1 DIN

A[MAX]

High-Z

A[MIN]

DIN

MSB

DIN

Notes: 1. For extended-SPI protocol, Cx = 7 + (A[MAX] + 1); For dual-SPI protocol,

Cx = 3 + (A[MAX] + 1)/2.

2. S# not shown.

Figure 39: EXTENDED DUAL INPUT FAST PROGRAM Command

Extended

Dual 3 4 Cx

MSB

DQ[1:0]

LSB

Command DIN

LSB

A[MAX]

A[MIN]

MSB

DIN DIN DIN DIN

7 8 Cx

MSB

DQ0

LSB

Command DIN

LSB

DQ1 DIN

High-Z

A[MIN]

A[MAX]

DIN

MSB

DIN

Notes: 1. For extended-SPI protocol, Cx = 7 + (A[MAX] + 1)/2; For dual-SPI protocol,

Cx = 3 + (A[MAX] + 1)/2.

2. S# not shown.

256Mb, 1.8V Multiple I/O Serial Flash Memory

PROGRAM Operations Timings

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Figure 40: QUAD INPUT FAST PROGRAM Command

7 8 Cx

MSB

DQ0

LSB

Command DIN

LSB

DQ[3:1] DIN

A[MAX]

High-Z

A[MIN]

DIN

MSB

DIN

Extended

Quad 1 2 Cx

MSB

DQ[3:0]

LSB

Command DIN

LSB

A[MAX]

A[MIN]

MSB

DIN DIN

Notes: 1. For extended-SPI protocol, Cx = 7 + (A[MAX] + 1); For quad-SPI protocol,

Cx = 1 + (A[MAX] + 1)/4.

2. S# not shown.

Figure 41: EXTENDED QUAD INPUT FAST PROGRAM Command

7 8 Cx

MSB

DQ0

LSB

Command DIN

LSB

DQ[2:1] DIN

High-Z

A[MIN]

A[MAX]

DIN

DQ3 DIN

‘1’

MSB

DIN DIN

Extended

Quad 1 2 Cx

MSB

DQ[3:0]

LSB

Command DIN

LSB

A[MAX]

A[MIN]

MSB

DIN DIN

Notes: 1. For extended-SPI protocol, Cx = 7 + (A[MAX] + 1)/4; For quad-SPI protocol,

Cx = 1 + (A[MAX] + 1)/4.

2. S# not shown.

256Mb, 1.8V Multiple I/O Serial Flash Memory

PROGRAM Operations Timings

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ERASE Operations

An ERASE operation changes a bit from 0 to 1. Before any ERASE command is initiated,

the WRITE ENABLE command must be executed to set the write enable latch bit to 1; if

not, the device ignores the command and no error bits are set to indicate operation fail-

ure. S# is driven LOW and held LOW until the eighth bit of the last data byte has been

latched in, after which it must be driven HIGH. The operations are self-timed, and dura-

tion is tSSE, tSE, or tBE according to command.

If S# is not driven HIGH, the command is not executed, flag status register error bits are

not set, and the write enable latch remains set to 1. A command applied to a protected

subsector is not executed. Instead, the write enable latch bit remains set to 1, and flag

status register bits 1 and 5 are set.

When the operation is in progress, the program or erase controller bit of the flag status

completes, the write in progress bit is cleared to 0. The write enable latch bit is cleared

to 0, whether the operation is successful or not. If the operation times out, the write en-

able latch bit is reset and the erase error bit is set to 1.

The status register and flag status register can be polled for the operation status. When

the operation completes, these register bits are cleared to 1.

Note: For all ERASE operations, noisy or undesirable signal effects can be reduced and

device data protection enhanced by holding S# LOW until the eighth bit of the last data

byte has been latched in; this ensures that the number of clock pulses is a multiple of

one byte before command execution.

Table 30: ERASE Operations

Operation Name Description/Conditions

SUBSECTOR ERASE (52h/20h) Sets the selected subsector or sector bits to FFh. Any address within the subsector is valid

for entry. Each address bit is latched in during the rising edge of the clock. The operation

can be suspended and resumed by the PROGRAM/ERASE SUSPEND and PROGRAM/ERASE

RESUME commands, respectively.

SECTOR ERASE (D8h)

BULK ERASE (C7h/60h) Sets the device bits to FFh.

The command is not executed if any sector is locked. Instead, the write enable latch bit

remains set to 1, and flag status register bits 1 and 5 are set.

256Mb, 1.8V Multiple I/O Serial Flash Memory

ERASE Operations

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Figure 42: SUBSECTOR and SECTOR ERASE Timing

7 8 Cx

MSB

DQ0

LSB

Command

A[MAX]

A[MIN]

3 4 Cx

MSB

DQ0[1:0]

LSB

Command

A[MAX]

A[MIN]

1 2 Cx

MSB

DQ0[3:0]

LSB

Command

A[MAX]

A[MIN]

Extended

Dual

Quad

Notes: 1. For extended-SPI protocol, Cx = 7 + (A[MAX] + 1); For dual-SPI protocol, Cx = 3 + (A[MAX]

+ 1)/2; For quad-SPI protocol, Cx = 1 + (A[MAX] + 1)/4.

2. S# not shown.

Figure 43: BULK ERASE Timing

MSB

DQ0

LSB

Command

MSB

DQ[1:0]

LSB

Command

MSB

DQ[3:0]

LSB

Command

Extended

Dual

Quad

Note: 1. S# not shown.

256Mb, 1.8V Multiple I/O Serial Flash Memory

ERASE Operations

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SUSPEND/RESUME Operations

PROGRAM/ERASE SUSPEND Operations

A PROGRAM/ERASE SUSPEND command enables the memory controller to interrupt

and suspend an array PROGRAM or ERASE operation within the program/erase latency.

To initiate the command, S# is driven LOW, and the command code is input on DQn.

The operation is terminated by the PROGRAM/ERASE RESUME command.

For a PROGRAM SUSPEND, the flag status register bit 2 is set to 1. For an ERASE SUS-

PEND, the flag status register bit 6 is set to 1.

After an erase/program latency time, the flag status register bit 7 is also set to 1, but the

device is considered in suspended state once bit 7 of the flag status register outputs 1

with at least one byte output. In the suspended state, the device is waiting for any oper-

ation.

If the time remaining to complete the operation is less than the suspend latency, the de-

vice completes the operation and clears the flag status register bits 2 or 6, as applicable.

Because the suspend state is volatile, if there is a power cycle, the suspend state infor-

mation is lost and the flag status register powers up as 80h.

It is possible to nest a PROGRAM/ERASE SUSPEND operation inside a PROGRAM/

ERASE SUSPEND operation just once. Issue an ERASE command and suspend it. Then

issue a PROGRAM command and suspend it also. With the two operations suspended,

the next PROGRAM/ERASE RESUME command resumes the latter operation, and a sec-

ond PROGRAM/ERASE RESUME command resumes the former (or first) operation.

PROGRAM/ERASE RESUME Operations

A PROGRAM/ERASE RESUME operation terminates the PROGRAM/ERASE RESUME

command. To initiate the command, S# is driven LOW, and the command code is input

on DQn. The operation is terminated by driving S# HIGH.

Table 31: SUSPEND/RESUME Operations

Operation Name Description/Conditions

PROGRAM SUSPEND (75h) A READ operation is possible in any page except the one in a suspended state. Reading

from a sector that is in a suspended state will output indeterminate data.

ERASE SUSPEND (75h) A PROGRAM or READ operation is possible in any sector except the one in a suspended

state. Reading from a sector that is in a suspended state will output indeterminate data.

During a SUSPEND SUBSECTOR ERASE operation, reading an address in the sector that

contains the suspended subsector could output indeterminate data.

The device ignores a PROGRAM command to a sector that is in an erase suspend state; it

also sets the flag status register bit 4 to 1 (program failure/protection error) and leaves

the write enable latch bit unchanged.

When the ERASE resumes, it does not check the new lock status of the WRITE VOLATILE

LOCK BITS command.

256Mb, 1.8V Multiple I/O Serial Flash Memory

SUSPEND/RESUME Operations

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Table 31: SUSPEND/RESUME Operations (Continued)

Operation Name Description/Conditions

PROGRAM RESUME (7Ah) The status register write in progress bit is set to 1 and the flag status register program

erase controller bit is set to 0. The command is ignored if the device is not in a suspen-

ded state.

When the operation is in progress, the program or erase controller bit of the flag status

the operation completes, that bit is cleared to 1.

ERASE RESUME (7Ah)

Note: 1. See the Operations Allowed/Disallowed During Device States table.

Figure 44: PROGRAM/ERASE SUSPEND and RESUME Timing

MSB

DQ0

LSB

Command

MSB

DQ[1:0]

LSB

Command

MSB

DQ[3:0]

LSB

Command

Extended

Dual

Quad

Note: 1. S# not shown.

256Mb, 1.8V Multiple I/O Serial Flash Memory

SUSPEND/RESUME Operations

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ONE-TIME PROGRAMMABLE Operations

READ OTP ARRAY Command

To initiate a READ OTP ARRAY command, S# is driven LOW. The command code is in-

put on DQ0, followed by address bytes and dummy clock cycles. Each address bit is

latched in during the rising edge of C. Data is shifted out on DQ1, beginning from the

specified address and at a maximum frequency of fC (MAX) on the falling edge of the

clock. The address increments automatically to the next address after each byte of data

is shifted out. There is no rollover mechanism; therefore, if read continuously, after lo-

cation 0x40, the device continues to output data at location 0x40. The operation is ter-

minated by driving S# HIGH at any time during data output.

Figure 45: READ OTP ARRAY Command Timing

7 8 Cx

MSB

DQ0

LSB

Command

A[MAX]

A[MIN]

3 4 Cx

MSB

DQ[1:0]

LSB

Command

A[MAX]

A[MIN]

MSB

DOUT DOUT DOUT DOUT DOUT

LSB

Dummy cycles

1 2 Cx

MSB

DQ[3:0]

LSB

Command

A[MAX]

A[MIN]

MSB

DOUT DOUT DOUT

LSB

Dummy cycles

Extended

MSB

DOUT DOUT DOUT DOUT DOUT

LSB

DOUT DOUT DOUT DOUT

Dummy cycles

Dual

Quad

DQ1 High-Z

Don’t Care

Note: 1. For extended-SPI protocol, Cx = 7 + (A[MAX] + 1); For dual-SPI protocol, Cx = 3 + (A[MAX]

+ 1)/2; For quad-SPI protocol, Cx = 1 + (A[MAX] + 1)/4.

PROGRAM OTP ARRAY Command

To initiate the PROGRAM OTP ARRAY command, the WRITE ENABLE command must

be issued to set the write enable latch bit to 1; otherwise, the PROGRAM OTP ARRAY

command is ignored and flag status register bits are not set. S# is driven LOW and held

LOW until the eighth bit of the last data byte has been latched in, after which it must be

driven HIGH. The command code is input on DQ0, followed by address bytes and at

least one data byte. Each address bit is latched in during the rising edge of the clock.

When S# is driven HIGH, the operation, which is self-timed, is initiated; its duration is

tPOTP. There is no rollover mechanism; therefore, after a maximum of 65 bytes are

latched in the subsequent bytes are discarded.

PROGRAM OTP ARRAY programs, at most, 64 bytes to the OTP memory area and one

OTP control byte. When the operation is in progress, the write in progress bit is set to 1.

256Mb, 1.8V Multiple I/O Serial Flash Memory

ONE-TIME PROGRAMMABLE Operations

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The write enable latch bit is cleared to 0, whether the operation is successful or not, and

the status register and flag status register can be polled for the operation status. When

the operation completes, the write in progress bit is cleared to 0.

If the operation times out, the write enable latch bit is reset and the program fail bit is

set to 1. If S# is not driven HIGH, the command is not executed, flag status register error

bits are not set, and the write enable latch remains set to 1. The operation is considered

complete once bit 7 of the flag status register outputs 1 with at least one byte output.

The OTP control byte (byte 64) is used to permanently lock the OTP memory array.

Table 32: OTP Control Byte (Byte 64)

Bit Name Settings Description

0 OTP control byte 0 = Locked

1 = Unlocked (default)

Used to permanently lock the 64-byte OTP array. When bit 0 = 1,

the 64-byte OTP array can be programmed. When bit 0 = 0, the

64-byte OTP array is read only.

Once bit 0 has been programmed to 0, it can no longer be

changed to 1. Program OTP array is ignored, the write enable

latch bit remains set, and flag status register bits 1 and 4 are set.

Figure 46: PROGRAM OTP Command Timing

7 8 Cx

MSB

DQ0

LSB

Command

A[MAX]

A[MIN]

MSB

DIN DIN DIN DIN DIN

LSB

DIN DIN DIN DIN

3 4 Cx

MSB

DQ[1:0]

LSB

Command

A[MAX]

A[MIN]

MSB

DIN DIN DIN DIN DIN

LSB

1 2 Cx

MSB

DQ[3:0]

LSB

Command

A[MAX]

A[MIN]

MSB

DIN DIN DIN

LSB

Extended

Dual

Quad

Note: 1. For extended-SPI protocol, Cx = 7 + (A[MAX] + 1); For dual-SPI protocol, Cx = 3 + (A[MAX]

+ 1)/2; For quad-SPI protocol, Cx = 1 + (A[MAX] + 1)/4.

256Mb, 1.8V Multiple I/O Serial Flash Memory

ONE-TIME PROGRAMMABLE Operations

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ADDRESS MODE Operations

ENTER and EXIT 4-BYTE ADDRESS MODE Command

To initiate these commands, S# is driven LOW, and the command is input on DQn.

Table 33: ENTER and EXIT 4-BYTE ADDRESS MODE Operations

Operation Name Description/Conditions

ENTER 4-BYTE ADDRESS MODE (B7h) The effect of the command is immediate. The default address mode is three bytes,

and the device returns to the default upon exiting the 4-byte address mode.

EXIT 4-BYTE ADDRESS MODE (E9h)

DEEP POWER-DOWN Operations

ENTER DEEP POWER-DOWN Command

To execute ENTER DEEP POWER-DOWN, S# must be driven HIGH after the eighth bit

of the command code is latched in, after which, tDP time must elapse before the supply

current is reduced to ICC2.. Any attempt to execute ENTER DEEP POWER-DOWN during

a WRITE operation is rejected without affecting the operation.

In deep power-down mode, no device error bits are set, the WEL state is unchanged,

and the device ignores all commands except RELEASE FROM DEEP POWER-DOWN,

RESET ENABLE, RESET, hardware reset, and power-loss rescue sequence commands.

RELEASE FROM DEEP POWER-DOWN Command

To execute the RELEASE FROM DEEP POWER-DOWN command, S# is driven LOW, fol-

lowed by the command code. Sending additional clock cycles on C while S# is driven

LOW voids the command.

RELEASE FROM DEEP POWER-DOWN is terminated by driving S# HIGH. The device

enters standby mode after S# is driven HIGH followed by a delay of tRDP. S# must re-

main HIGH during this time.

Table 34: DEEP POWER-DOWN Operations

Operation Name Description/Conditions

ENTER DEEP

POWER-DOWN (B9h)

The command is used to place the device in deep power-down mode for the lowest device

power consumption, with device current reduced to ICC2. This command can also be used as

a software protection mechanism while the device is not in active use.

RELEASE FROM

DEEP POWER-DOWN (ABh)

The command is used to exit from deep power-down mode. The device also exits deep

power-down mode upon:

A power-down, entering standby mode with the next power-up.

A hardware or software reset operation, entering standby mode with a recovery time as

specified in the AC Reset Specifications.

256Mb, 1.8V Multiple I/O Serial Flash Memory

ADDRESS MODE Operations

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DEEP POWER-DOWN Timings

Figure 47: ENTER DEEP POWER-DOWN Timing

Extended

tDP

MSB

LSB

Command

DQ0

Deep

Power-Down

Mode

Standby

Mode

Quad

MSB

LSB

Command

DQ0[3:0]

Deep

Power-Down

Mode

Standby

Mode

Dual

MSB

LSB

Command

DQ0[1:0]

Deep

Power-Down

Mode

Standby

Mode

tDP

256Mb, 1.8V Multiple I/O Serial Flash Memory

DEEP POWER-DOWN Operations

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Figure 48: RELEASE FROM DEEP POWER-DOWN Timing

Extended

MSB

LSB

Command

DQ0

Deep

Power-Down

Mode

Standby

Mode

Quad

MSB

LSB

Command

DQ[3:0]

Dual

MSB

LSB

Command

DQ[1:0]

Deep

Power-Down

Mode

Standby

Mode

Deep

Power-Down

Mode

Standby

Mode

tRDP

256Mb, 1.8V Multiple I/O Serial Flash Memory

DEEP POWER-DOWN Operations

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QUAD PROTOCOL Operations

ENTER or RESET QUAD INPUT/OUTPUT MODE Command

To initiate these commands, the WRITE ENABLE command must not be executed. S#

must be driven LOW, and the command must be input on DQn.

Table 35: ENTER and RESET QUAD PROTOCOL Operations

Operation Name Description/Conditions

ENTER QUAD INPUT/OUTPUT MODE (35h) The effect of the command is immediate.

RESET QUAD INPUT/OUTPUT MODE (F5h)

256Mb, 1.8V Multiple I/O Serial Flash Memory

QUAD PROTOCOL Operations

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CYCLIC REDUNDANCY CHECK Operations

A CYCLIC REDUNDANCY CHECK (CRC) operation is a hash function designed to de-

tect accidental changes to raw data and is used commonly in digital networks and stor-

age devices such as hard disk drives. A CRC-enabled device calculates a short, fixed-

length binary sequence, known as the CRC code or just CRC, for each block of data. CRC

can be a higher performance alternative to reading data directly in order to verify re-

cently programmed data. Or, it can be used to check periodically the data integrity of a

large block of data against a stored CRC reference over the life of the product. CRC helps

improve test efficiency for programmer or burn-in stress tests. No system hardware

changes are required to enable CRC.

The CRC-64 operation follows the ECMA standard. The generating polynomial is:

G(x) = x64 + x62 + x57 + x55 + x54 + x53 + x52 + x47 + x46 + x45 + x40 + x39 + x38 + x37 + x35 + x33

+ x32 + x31 + x29 + x27 + x24 + x23 + x22 + x21 + x19 + x17 + x13 + x12 + x10 + x9 + x7 + x4 + x + 1

Note: The data stream sequence is from LSB to MSB and the default initial CRC value is

all zero.

The device CRC operation generates the CRC result of the entire device or of an address

range specified by the operation. Then the CRC result is compared with the expected

CRC data provided in the sequence. Finally the device indicates a pass or fail through

the bit #4 of FLAG STATUS REGISTER. If the CRC fails, it is possible to take corrective

action such as verifying with a normal read mode or by rewriting the array data.

CRC operation supports CRC data read back when CRC check fails; the CRC data gener-

ated from the target address range or entire device will be stored in a dedicated register:

general purpose read register (GPRR) only when CRC check fails, and it can be read out

through the GPRR read sequence with command 96h, least significant byte first. GPRR

is reset to default all 0 at the beginning of the CRC operation, and so customer will read

all 0 if CRC operation pass.

Note that the GPRR is a volatile register. It is cleared to all 0s on power-up and hard-

ware/software reset. Read GPRR starts from the first location, when clocked continu-

ously, will output 00h after location 64.

The CYCLIC REDUNDANCY CHECK operation command sequences are shown in the

tables below, for an entire die or for a selected range.

Table 36: CRC Command Sequence on Entire Device

Command Sequence

DescriptionByte# Data

1 9Bh Command code for interface activation

2 27h Sub-command code for CRC operation

3 FFh CRC operation option selection (CRC operation on entire device)

4 CRC[7:0] 1st byte of expected CRC value

5–10 CRC[55:8] 2nd to 7th byte of expected CRC value

11 CRC[63:56] 8th byte of expected CRC value

Drive S# HIGH Operation sequence confirmed; CRC operation starts

256Mb, 1.8V Multiple I/O Serial Flash Memory

CYCLIC REDUNDANCY CHECK Operations

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Table 37: CRC Command Sequence on a Range

Command Sequence

DescriptionByte# Data

1 9Bh Command code for interface activation

2 27h Sub-command code for CRC operation

3 FEh CRC operation option selection (CRC operation on a range)

4 CRC[7:0] 1st byte of expected CRC value

5–10 CRC[55:8] 2nd to 7th byte of expected CRC value

11 CRC[63:56] 8th byte of expected CRC value

12 Start Address [7:0] Specifies the starting byte address for CRC operation

13–14 Start Address [23:8]

15 Start Address [31:24]

16 Stop Address [7:0] Specifies the ending byte address for CRC operation

17–18 Stop Address [23:8]

19 Stop Address [31:24]

Drive S# HIGH Operation sequence confirmed; CRC operation starts

256Mb, 1.8V Multiple I/O Serial Flash Memory

CYCLIC REDUNDANCY CHECK Operations

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State Table

The device can be in only one state at a time. Depending on the state of the device,

some operations as shown in the table below are allowed (Yes) and others are not (No).

For example, when the device is in the standby state, all operations except SUSPEND

are allowed in any sector. For all device states except the erase suspend state, if an oper-

ation is allowed or disallowed in one sector, it is allowed or disallowed in all other sec-

tors. In the erase suspend state, a PROGRAM operation is allowed in any sector except

the one in which an ERASE operation has been suspended.

Table 38: Operations Allowed/Disallowed During Device States

Operation

Standby

State

Program or

Erase State

Subsector Erase Suspend or

Program Suspend State

Erase Suspend

State Notes

READ (memory) Yes No Yes Yes 1

READ

(status/flag status

registers)

Yes Yes Yes Yes 6

PROGRAM Yes No No Yes/No 2

ERASE

(sector/subsector)

Yes No No No 3

WRITE Yes No No No 4

WRITE Yes No Yes Yes 5

SUSPEND No Yes No No 7

Notes: 1. All READ operations except READ STATUS REGISTER and READ FLAG REGISTER. When is-

sued to a sector or subsector that is simultaneously in an erase suspend state, the READ

operation is accepted, but the data output is not guaranteed until the erase has comple-

ted.

2. All PROGRAM operations except PROGRAM OTP. In the erase suspend state, a PROGRAM

operation is allowed in any sector (Yes) except the sector (No) in which an ERASE opera-

tion has been suspended.

3. Applies to the SECTOR ERASE or SUBSECTOR ERASE operation.

4. Applies to the following operations: WRITE STATUS REGISTER, WRITE NONVOLATILE

CONFIGURATION REGISTER, PROGRAM OTP, and BULK ERASE.

5. Applies to the WRITE VOLATILE CONFIGURATION REGISTER, WRITE ENHANCED VOLA-

TILE CONFIGURATION REGISTER, WRITE ENABLE, WRITE DISABLE, CLEAR FLAG STATUS

6. Applies to the READ STATUS REGISTER or READ FLAG STATUS REGISTER operation.

7. Applies to the PROGRAM SUSPEND or ERASE SUSPEND operation.

256Mb, 1.8V Multiple I/O Serial Flash Memory

State Table

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XIP Mode

Execute-in-place (XIP) mode allows the memory to be read by sending an address to the

device and then receiving the data on one, two, or four pins in parallel, depending on

the customer requirements. XIP mode offers maximum flexibility to the application,

saves instruction overhead, and reduces random access time.

Activate and Terminate XIP Using Volatile Configuration Register

Applications that boot in SPI and must switch to XIP use the volatile configuration reg-

ister. XIP provides faster memory READ operations by requiring only an address to exe-

cute, rather than a command code and an address.

To activate XIP requires two steps. First, enable XIP by setting volatile configuration reg-

ister bit 3 to 0. Next, drive the XIP confirmation bit to 0 during the next FAST READ op-

eration. XIP is then active. Once in XIP, any command that occurs after S# is toggled re-

quires only address bits to execute; a command code is not necessary, and device oper-

ations use the SPI protocol that is enabled. XIP is terminated by driving the XIP confir-

mation bit to 1. The device automatically resets volatile configuration register bit 3 to 1.

Activate and Terminate XIP Using Nonvolatile Configuration Register

Applications that must boot directly in XIP use the nonvolatile configuration register. To

enable a device to power-up in XIP using this register, set nonvolatile configuration reg-

ister bits [11:9]. Settings vary according to protocol, as explained in the Nonvolatile

Configuration Register section. Because the device boots directly in XIP, after the power

cycle, no command code is necessary. XIP is terminated by driving the XIP confirmation

bit to 1.

Figure 49: XIP Mode Directly After Power-On

VCC

DQ0

DQ[3:1]

DOUT

Xb DOUT DOUT DOUT DOUT

DOUT DOUT DOUT DOUT DOUT

0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

tVSI (<100µ)

NVCR check:

XIP enabled

Dummy cycles

Mode 3

Mode 0

A[MAX] MSB

A[MIN] LSB

Note: 1. Xb is the XIP confirmation bit and should be set as follows: 0 to keep XIP state; 1 to exit

XIP mode and return to standard read mode.

256Mb, 1.8V Multiple I/O Serial Flash Memory

XIP Mode

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Confirmation Bit Settings Required to Activate or Terminate XIP

The XIP confirmation bit setting activates or terminates XIP after it has been enabled or

disabled. This bit is the value on DQ0 during the first dummy clock cycle in the FAST

READ operation. In dual I/O XIP mode, the value of DQ1 during the first dummy clock

cycle after the addresses is always "Don't Care." In quad I/O XIP mode, the values of

DQ3, DQ2, and DQ1 during the first dummy clock cycle after the addresses are always

"Don't Care."

Table 39: XIP Confirmation Bit

Bit Value Description

0 Activates XIP: While this bit is 0, XIP remains activated.

1 Terminates XIP: When this bit is set to 1, XIP is terminated and the device returns to SPI.

Table 40: Effects of Running XIP in Different Protocols

Protocol Effect

Extended I/O

and Dual I/O

In a device with a dedicated part number where RESET# is enabled, a LOW pulse on that pin re-

sets XIP and the device to the state it was in previous to the last power-up, as defined by the

nonvolatile configuration register.

Dual I/O Values of DQ1 during the first dummy clock cycle are "Don't Care."

Quad I/O1Values of DQ[3:1] during the first dummy clock cycle are "Don't Care." In a device with a dedica-

ted part number, it is only possible to reset memory when the device is deselected.

Note: 1. In a device with a dedicated part number where RESET# is enabled, a LOW pulse on that

pin resets XIP and the device to the state it was in previous to the last power-up, as de-

fined by the nonvolatile configuration register only when the device is deselected.

Terminating XIP After a Controller and Memory Reset

The system controller and the device can become out of synchronization if, during the

life of the application, the system controller is reset without the device being reset. In

such a case, the controller can reset the memory to power-on reset if the memory has

reset functionality. (Reset is available in devices with a dedicated part number.)

• 7 clock cycles within S# LOW (S# becomes HIGH before 8th clock cycle)

• + 9 clock cycles within S# LOW (S# becomes HIGH before 10th clock cycle)

• + 13 clock cycles within S# LOW (S# becomes HIGH before 14th clock cycle)

• + 17 clock cycles within S# LOW (S# becomes HIGH before 18th clock cycle)

• + 25 clock cycles within S# LOW (S# becomes HIGH before 26th clock cycle)

• + 33 clock cycles within S# LOW (S# becomes HIGH before 34th clock cycle)

These sequences cause the controller to set the XIP confirmation bit to 1, thereby termi-

nating XIP. However, it does not reset the device or interrupt PROGRAM/ERASE opera-

tions that may be in progress. After terminating XIP, the controller must execute RESET

ENABLE and RESET MEMORY to implement a software reset and reset the device.

256Mb, 1.8V Multiple I/O Serial Flash Memory

XIP Mode

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Power-Up and Power-Down

Power-Up and Power-Down Requirements

At power-up and power-down, the device must not be selected; that is, S# must follow

the voltage applied on VCC until VCC reaches the correct values: VCC,min at power-up and

VSS at power-down.

To provide device protection and prevent data corruption and inadvertent WRITE oper-

ations during power-up, a power-on reset circuit is included. The logic inside the device

is held to RESET while VCC is less than the power-on reset threshold voltage shown here;

all operations are disabled, and the device does not respond to any instruction. During

a standard power-up phase, the device ignores all commands except READ STATUS

the memory internal state. After power-up, the device is in standby power mode; the

write enable latch bit is reset; the write in progress bit is reset; and the dynamic protec-

tion register is configured as: (write lock bit, lock down bit) = (0,0).

Normal precautions must be taken for supply line decoupling to stabilize the VCC sup-

ply. Each device in a system should have the VCC line decoupled by a suitable capacitor

(typically 100nF) close to the package pins. At power-down, when VCC drops from the

operating voltage to below the power-on-reset threshold voltage shown here, all opera-

tions are disabled and the device does not respond to any command.

When the operation is in progress, the program or erase controller bit of the status reg-

ister is set to 0. To obtain the operation status, the flag status register must be polled.

When the operation completes, the program or erase controller bit is cleared to 1. The

cycle is complete after the flag status register outputs the program or erase controller bit

to 1.

Note: If power-down occurs while a WRITE, PROGRAM, or ERASE cycle is in progress,

data corruption may result.

Note: In extended-SPI protocol, 1Gb and 2Gb device must wait 100µs after VCC reaches

VCC,min before polling the status register or flag status register.

Note: For additional details about how to properly apply and remove the power supply

to the device, refer to TN-25-38: Power-Up, Power-Down, and Brownout Considerations

on MT25Q, MT25T, and MT35X NOR Flash Memory

256Mb, 1.8V Multiple I/O Serial Flash Memory

Power-Up and Power-Down

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Figure 50: Power-Up Timing

CC,min

Chip

reset

Chip selection not allowed

Polling allowed

VSL

Time

Device fully accessible

CC,max

Extended-SPI protocol

Flag status register bit 7 = 0

Status register bit 0 = 1

Notes: 1. tVSL polling has to be in extended-SPI protocol and STR mode.

2. During tVSL period, HOLD# is enabled, RESET# disabled, and output strength is in de-

fault setting.

3. In a system that uses a fast VCC ramp rate, current design requires a minimum 100µs af-

ter VCC reaches tVWI, and before the polling is allowed, even though VCC,min is achieved.

4. In extended-SPI protocol, 1Gb and 2Gb device must wait 100µs after VCC reaches VCC,min

before polling the status register or flag status register.

Table 41: Power-Up Timing and VWI Threshold

Note 1 applies to entire table

Symbol Parameter Min Max Unit Notes

tVSL VCC,min to device fully accessible – 300 µs 2, 3

VWI Write inhibit voltage 1.0 1.5 V 2

Notes: 1. When VCC reaches VCC,min, to determine whether power-up initialization is complete,

the host can poll status register bit 0 or flag status register bit 7 only in extended-SPI

protocol because the device will accept commands only on DQ0 and output data only

on DQ1. When the device is ready, the host has full access using the protocol configured

in the nonvolatile configuration register. If the host cannot poll the status register in x1

SPI mode, it is recommended to wait tVSL before accessing the device.

2. Parameters listed are characterized only.

3. On the first power-up after an event causing a subsector erase operation interrupt (for

example, due to power-loss), the maximum time for tVSL will be up to 4.5ms in case of

4KB subsector erase interrupt and up to 36ms in case of 32KB subsector erase interrupt;

this accounts for erase recovery embedded operation.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Power-Up and Power-Down

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Active, Standby, and Deep Power-Down Modes

When S# is LOW, the device is selected and in active power mode. When S# is HIGH, the

device is deselected but could remain in active power mode until ongoing internal op-

erations are completed. Then the device goes into standby power mode and device cur-

rent consumption drops to ICC1.

Deep power-down mode enbles users to place the device in the lowest power consump-

tion mode, ICC2. The ENTER DEEP POWER-DOWN command is used to put the device

in deep power-down mode, and the RELEASE FROM DEEP POWER-DOWN command

is used to bring the device out of deep power-down mode. Command details are in the

Command Set table and the DEEP POWER-DOWN Operations section of this data

sheet.

Power Loss and Interface Rescue

If a power loss occurs during a WRITE NONVOLATILE CONFIGURATION REGISTER

command, after the next power-on, the device might begin in an undetermined state

(XIP mode or an unnecessary protocol). If this occurs, a power loss recovery sequence

must reset the device to a fixed state (extended-SPI protocol without XIP) until the next

power-up.

If the controller and memory device get out of synchronization, the controller can fol-

low an interface rescue sequence to reset the memory device interface to power-up to

the last reset state (as defined by latest nonvolatile configuration register). This resets

only the interface, not the entire memory device, and any ongoing operations are not

interrupted.

After each sequence, the issue should be resolved definitively by running the WRITE

NONVOLATILE CONFIGURATION REGISTER command again.

Note: The two steps in each sequence must be in the correct order, and tSHSL2 must be

at least 50ns for the duration of each sequence.

The first step for both the power loss recovery and interface rescue sequences is descri-

bed under "Recovery." The second step in the power loss recovery sequence is under

"Power Loss Recovery" and the second step in the interface rescue sequence is under

"Interface Rescue."

Recovery

Step one of both the power loss recovery and interface rescue sequences is DQ0 (PAD

DATA) and DQ3 (PAD HOLD) equal to 1 for the situations listed here:

• 7 clock cycles within S# LOW (S# becomes HIGH before 8th clock cycle)

• + 9 clock cycles within S# LOW (S# becomes HIGH before 10th clock cycle)

• + 13 clock cycles within S# LOW (S# becomes HIGH before 14th clock cycle)

• + 17 clock cycles within S# LOW (S# becomes HIGH before 18th clock cycle)

• + 25 clock cycles within S# LOW (S# becomes HIGH before 26th clock cycle)

• + 33 clock cycles within S# LOW (S# becomes HIGH before 34th clock cycle)

256Mb, 1.8V Multiple I/O Serial Flash Memory

Active, Standby, and Deep Power-Down Modes

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Power Loss Recovery

For power loss recovery, the second part of the sequence is exiting from dual- or quad-

SPI protocol by using the following FFh sequence: DQ0 and DQ3 equal to 1 for 8 clock

cycles within S# LOW; S# becomes HIGH before 9th clock cycle. After this two-part se-

quence the extended-SPI protocol is active.

Interface Rescue

For interface rescue, the second part of the sequence is for exiting from dual or quad-

SPI protocol by using the following FFh sequence: DQ0 and DQ3 equal to 1 for 16 clock

cycles within S# LOW; S# becomes HIGH before 17th clock cycle. For DTR protocol, 1

should be driven on both edges of clock for 16 cycles with S# LOW. After this two-part

sequence, the extended-SPI protocol is active.

Initial Delivery Status

The device is delivered as follows:

• Memory array erased: all bits are set to 1 (each byte contains FFh)

• Status register contains 00h (all status register bits are 0)

• Nonvolatile configuration register (NVCR) bits all erased (FFFFh)

256Mb, 1.8V Multiple I/O Serial Flash Memory

Initial Delivery Status

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Absolute Ratings and Operating Conditions

Stresses greater than those listed may cause permanent damage to the device. This is a

stress rating only. Exposure to absolute maximum rating for extended periods may ad-

versely affect reliability. Stressing the device beyond the absolute maximum ratings may

cause permanent damage.

Table 42: Absolute Ratings

Symbol Parameter Min Max Units Notes

TSTG Storage temperature –65 150 °C

TLEAD Lead temperature during soldering – See note 1 °C

VCC Supply voltage –0.6 2.4 V 2

VIO Input/output voltage with respect to ground –0.6 VCC + 0.6 V 2

VESD Electrostatic discharge voltage

(human body model)

–2000 2000 V 2, 3

Notes: 1. Compliant with JEDEC Standard J-STD-020C (for small-body, Sn-Pb or Pb assembly),

RoHS, and the European directive on Restrictions on Hazardous Substances (RoHS)

2002/95/EU.

2. All specified voltages are with respect to VSS. During infrequent, nonperiodic transitions,

the voltage potential between VSS and the VCC may undershoot to –2.0V for periods less

than 20ns, or overshoot to VCC,max + 2.0V for periods less than 20ns.

3. JEDEC Standard JESD22-A114A (C1 = 100pF, R1 = 1500Ω, R2 = 500Ω).

Table 43: Operating Conditions

Symbol Parameter Min Max Units

VCC Supply voltage 1.7 2.0 V

TAAmbient operating temperature (IT range) –40 85 °C

TAAmbient operating temperature (AT range) –40 105 °C

TAAmbient operating temperature (UT range) –40 125 °C

Table 44: Input/Output Capacitance

Note 1 applies to entire table

Symbol Description Min Max Units

CIN/OUT Input/output capacitance

(DQ0/DQ1/DQ2/DQ3)

– 10 pF

CIN Input capacitance (other pins) – 6 pF

CIN/S# Input/Chip select capacitance – 10 pF

Note: 1. Verified in device characterization; not 100% tested. These parameters are not subject

to a production test. They are verified by design and characterization. The capacitance is

measured according to JEP147 ("PROCEDURE FOR MEASURING INPUT CAPACITANCE US-

ING A VECTOR NETWORK ANALYZER (VNA)") with VCC and VSS applied and all other

pins floating (except the pin under test), VBIAS = VCC/2, TA = 25°C, Frequency = 54 MHz.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Absolute Ratings and Operating Conditions

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Table 45: AC Timing Input/Output Conditions

Symbol Description Min Max Units Notes

CLLoad capacitance – 30 pF 1

– Input rise and fall times – 1.5 ns

Input pulse voltages 0.2VCC to 0.8VCC V 2

Input timing reference voltages 0.3VCC to 0.7VCC V

Output timing reference voltages VCC/2 V

Notes: 1. Output buffers are configurable by user.

2. For quad/dual operations: 0V to VCC.

Figure 51: AC Timing Input/Output Reference Levels

0.8VCC

0.2VCC

0.7VCC

0.5VCC

0.3VCC

Input levels1I/O timing

reference levels

Note: 1. 0.8VCC = VCC for dual/quad operations; 0.2VCC = 0V for dual/quad operations.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Absolute Ratings and Operating Conditions

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DC Characteristics and Operating Conditions

Table 46: DC Current Characteristics and Operating Conditions

Notes 1–5 apply to entire table

Parameter Symbol Test Conditions Typ Max Unit

Input leakage current ILI – ±2 µA

Output leakage current ILO – ±2 µA

Standby current (IT range) ICC1 S# = VCC, VIN = VSS or VCC 15 75 µA

Standby current (AT range) ICC1 S# = VCC, VIN = VSS or VCC 20 120 µA

Standby current (UT range) ICC1 S# = VCC, VIN = VSS or VCC 20 180 µA

Deep power-down current (IT range) ICC2 S# = VCC, VIN = VSS or VCC 2 30 µA

Deep power-down current (AT range) ICC2 S# = VCC, VIN = VSS or VCC 2 80 µA

Deep power-down current (UT range) ICC2 S# = VCC, VIN = VSS or VCC 2 120 µA

Operating current

(fast-read extended I/O)

ICC3 C = 0.1VCC/0.9VCC at 166 MHz, DQ1

= open

– 20 mA

C = 0.1VCC/0.9VCC at 54 MHz, DQ1

= open

– 8 mA

Operating current (fast-read dual I/O) C = 0.1VCC/0.9VCC at 166 MHz DQ =

open

– 25 mA

Operating current (fast-read quad I/O) C = 0.1VCC/0.9VCC at 166 MHz STR

or 80 MHz DTR DQ = open

– 28 mA

C = 0.1VCC/0.9VCC at 166 MHz STR

or 90 MHz DTR DQ = open

– 31 mA

Operating current

(PROGRAM operations)

ICC4 S# = VCC – 35 mA

Operating current

(WRITE operations)

ICC5 S# = VCC – 35 mA

Operating current (ERASE operations) ICC6 S# = VCC – 35 mA

Notes: 1. All currents are RMS unless noted. Typical values at typical VCC (3.0/1.8V); VIO = 0V/VCC;

TC = +25°C.

2. Standby current is the average current measured over any time interval 5µs after S de-

assertion (and any internal operations are complete).

3. Deep power-down current is the average current measured 5ms over any 5ms time in-

terval, 100µs after the ENTER DEEP POWER-DOWN operation (and any internal opera-

tions are complete).

4. All read currents are the average current measured over any 1KB continuous read. No

load, checker-board pattern.

5. All program currents are the average current measured over any 256-byte typical data

program.

Table 47: DC Voltage Characteristics and Operating Conditions

Note 1 applies to entire table

Parameter Symbol Conditions Min Max Unit

Input low voltage VIL –0.5 0.3VCC V

256Mb, 1.8V Multiple I/O Serial Flash Memory

DC Characteristics and Operating Conditions

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Table 47: DC Voltage Characteristics and Operating Conditions (Continued)

Note 1 applies to entire table

Parameter Symbol Conditions Min Max Unit

Input high voltage VIH 0.7VCC VCC + 0.4 V

Output low voltage VOL IOL = 1.6mA – 0.4 V

Output high voltage VOH IOH = –100µA VCC - 0.2 – V

Note: 1. VIL can undershoot to –1.0V for periods <2ns and VIH may overshoot to VCC,max + 1.0V

for periods less than 2ns.

256Mb, 1.8V Multiple I/O Serial Flash Memory

DC Characteristics and Operating Conditions

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AC Characteristics and Operating Conditions

Table 48: AC Characteristics and Operating Conditions

Parameter Symbol

Data

Transfer

Rate Min Typ Max Unit Notes

Clock frequency for all commands other

than READ (Extended-SPI, DIO-SPI, and

QIO-SPI protocol)

fC STR DC – 166 MHz

DTR DC – 90

Clock frequency for READ command (03h) fR STR DC – 54 MHz

DTR DC – 27

Clock HIGH time tCH STR 2.7 – – ns 2

DTR 5.0 – –

Clock LOW time tCL STR 2.7 – – ns 2

DTR 5.0 – –

Clock rise time (peak-to-peak) tCLCH STR/DTR 0.1 – – V/ns 3, 4

Clock fall time (peak-to-peak) tCHCL STR/DTR 0.1 – – V/ns 3, 4

S# active setup time (relative to clock) tSLCH STR/DTR 2.7 – – ns

S# not active hold time (relative to clock) tCHSL STR/DTR 2.7 – – ns

Data in setup time tDVCH STR/DTR 1.75 – – ns

tDVCL DTR only 1.75 – – ns

Data in hold time tCHDX STR 2 – – ns

DTR 2.3 – – ns

tCLDX DTR only 2.3 – – ns

S# active hold time (relative to clock) tCHSH STR 2.7 – – ns

DTR 5.0 – –

S# active hold time (relative to clock LOW)

Only for writes in DTR

tCLSH DTR only 3.375 – – ns

S# not active setup time (relative to clock) tSHCH STR 2.7 – – ns

DTR 5.0 – – ns

S# deselect time after a READ command tSHSL1 STR/DTR 6 – – ns

S# deselect time after a nonREAD com-

mand

tSHSL2 STR/DTR 30 – – ns 5

Output disable time tSHQZ STR/DTR – – 7 ns 3

Clock LOW to output valid under 30pF tCLQV STR/DTR – – 6 ns

Clock LOW to output valid under 10pF STR/DTR – – 5 ns

Clock HIGH to output valid under 30pF tCHQV DTR only – – 6 ns

Clock HIGH to output valid under 10pF DTR only – – 5 ns

Output hold time tCLQX STR/DTR 1 – – ns

Output hold time tCHQX DTR only 1 – – ns

HOLD setup time (relative to clock) tHLCH STR/DTR 2.7 – – ns

HOLD hold time (relative to clock) tCHHH STR/DTR 2.7 – – ns

256Mb, 1.8V Multiple I/O Serial Flash Memory

AC Characteristics and Operating Conditions

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Table 48: AC Characteristics and Operating Conditions (Continued)

Parameter Symbol

Data

Transfer

Rate Min Typ Max Unit Notes

HOLD setup time (relative to clock) tHHCH STR/DTR 2.7 – – ns

HOLD hold time (relative to clock) tCHHL STR/DTR 2.7 – – ns

HOLD to output Low-Z tHHQX STR/DTR – – 8 ns 3

HOLD to output High-Z tHLQZ STR/DTR – – 8 ns 3

CRC check time: main block tCRC STR/DTR – 1.3 - ms

CRC check time: full chip (256Mb) tCRC STR/DTR – 1 - s

Write protect setup time tWHSL STR/DTR 20 – – ns 6

Write protect hold time tSHWL STR/DTR 100 – – ns 6

S# HIGH to deep power-down tDP STR/DTR 3 – – µs

S# HIGH to standby mode (DPD exit time) tRDP STR/DTR 30 – – µs

WRITE STATUS REGISTER cycle time tW STR/DTR – 1.3 8 ms

WRITE NONVOLATILE CONFIGURATION

tWNVCR STR/DTR – 0.2 1 s

Nonvolatile sector lock time tPPBP STR/DTR – 0.1 2.8 ms

Program ASP register tASPP STR/DTR – 0.1 0.5 ms

Program password tPASSP STR/DTR – 0.2 0.8 ms

Erase nonvolatile sector lock array tPPBE STR/DTR – 0.2 1 s

Page program time (256 bytes) tPP STR/DTR – 120 1800 µs 7

Page program time (n bytes) – 18 + 2.5 ×

int(n/6)

1800 µs 8

PROGRAM OTP cycle time (64 bytes) tPOTP STR/DTR – 0.12 0.8 ms

Sector erase time tSE STR/DTR – 0.15 1 s

4KB subsector erase time tSSE STR/DTR – 0.05 0.4 s

32KB subsector erase time tSSE STR/DTR – 0.1 1 s

256Mb bulk erase time tBE STR/DTR – 40 200 s

Notes: 1. Typical values given for TA = 25 °C.

2. tCH + tCL must add up to 1/fC.

3. Value guaranteed by characterization; not 100% tested.

4. Expressed as a slew-rate.

5. nonREAD commands are WRITE, PROGRAM, and ERASE.

6. Only applicable as a constraint for a WRITE STATUS REGISTER command when STATUS

7. Typical value is applied for pattern: 50% "0" and 50% "1".

8. int(n) correspond to the integer part of n, For example int (12/8) = 1, int (32/8) = 4,

int(15.3) = 15.

256Mb, 1.8V Multiple I/O Serial Flash Memory

AC Characteristics and Operating Conditions

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AC Reset Specifications

Table 49: AC RESET Conditions

Note 1 applies to entire table

Parameter Symbol Conditions Min Typ Max Unit

Reset pulse

width

tRLRH2 50 – – ns

Reset recovery

time

tRHSL Device deselected (S# HIGH) and is in XIP mode 40 – – ns

Device deselected (S# HIGH) and is in standby mode 40 – – ns

Commands are being decoded, any READ operations are

in progress or any WRITE operation to volatile registers

are in progress

40 – – ns

Any device array PROGRAM/ERASE/SUSPEND/RESUME,

PROGRAM OTP, NONVOLATILE SECTOR LOCK, and ERASE

NONVOLATILE SECTOR LOCK ARRAY operations are in

progress

30 – – µs

While a WRITE STATUS REGISTER operation is in progress – tW – ms

While a WRITE NONVOLATILE CONFIGURATION REGIS-

TER operation is in progress

–tWNVCR – ms

On completion or suspension of a SUBSECTOR ERASE op-

eration

–tSSE – s

Device in deep power-down mode – tRDP – ms

While ADVANCED SECTOR PROTECTION PROGRAM oper-

ation is in progress

–tASPP – ms

While PASSWORD PROTECTION PROGRAM operation is

in progress

–tPASSP – ms

Software reset

recovery time

tSHSL3 Device deselected (S# HIGH) and is in standby mode 40 – – ns

Any Flash array PROGRAM/ERASE/SUSPEND/RESUME,

PROGRAM OTP, NONVOLATILE SECTOR LOCK, and ERASE

NONVOLATILE SECTOR LOCK ARRAY operations are in

progress

30 – – µs

While WRITE STATUS REGISTER operation is in progress – tW – ms

While a WRITE NONVOLATILE CONFIGURATION REGIS-

TER operation is in progress

–tWNVCR – ms

On completion or suspension of a SUBSECTOR ERASE op-

eration

–tSSE – s

Device in deep power-down mode – tRDP – ms

While ADVANCED SECTOR PROTECTION PROGRAM oper-

ation is in progress

–tASPP – ms

While PASSWORD PROTECTION PROGRAM operation is

in progress

–tPASSP – ms

256Mb, 1.8V Multiple I/O Serial Flash Memory

AC Reset Specifications

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Table 49: AC RESET Conditions (Continued)

Note 1 applies to entire table

Parameter Symbol Conditions Min Typ Max Unit

Chip select

high to reset

high

tSHRH Chip must be deselected before reset is de-asserted 10 – – ns

Notes: 1. Values are guaranteed by characterization; not 100% tested.

2. The device reset is possible but not guaranteed if tRLRH < 50ns.

Figure 52: Reset AC Timing During PROGRAM and ERASE Cycle

tSHRH

tRLRH

tRHSL

RESET#

Don’t Care

Figure 53: Reset Enable and Reset Memory Timing

DQ0

01234567 01234567

Reset enable Reset memory

Figure 54: Serial Input Timing STR

tSLCH

tCHSL

tDVCH tCHDX tCLCH

tCHCL

tCHSH tSHCH

tSHSL

DQ0

DQ1 High-Z High-Z

MSB in LSB in

Don’t Care

256Mb, 1.8V Multiple I/O Serial Flash Memory

AC Reset Specifications

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Figure 55: Serial Input Timing DTR

High-Z High-Z

tSLCH

tCHSL

tDVCH

tCHDX

tCLCH

tCHCL

tCLSH

tSHCH

tSHSL

DQ0

DQ1

MSB LSB

tDVCL

tCLDX

Figure 56: Write Protect Setup and Hold During WRITE STATUS REGISTER Operation (SRWD = 1)

Don’t Care

High-Z High-Z

DQ0

DQ1

tWHSL tSHWL

Figure 57: Hold Timing

tHLCH

tCHHL tHHCH

tHLQZ

tCHHH

tHHQX

DQ0

DQ1

HOLD#

Don’t Care

256Mb, 1.8V Multiple I/O Serial Flash Memory

AC Reset Specifications

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Figure 58: Output Timing for STR

tCL tCH

DQ1 LSB out

tCLQX tCLQX tSHQZ

tCLQV tCLQV

Figure 59: Output Timing for DTR

tCL tCH

DQ1 MSB LSB

tCLQX tSHQZ

tCLQV tCHQV

tCHQX

256Mb, 1.8V Multiple I/O Serial Flash Memory

AC Reset Specifications

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Program/Erase Specifications

Table 50: Program/Erase Specifications

Parameter Condition Typ Max Units Notes

Erase to suspend Sector erase or erase resume to erase suspend 150 – µs 1

Program to suspend Program resume to program suspend 5 – µs 1

Subsector erase to sus-

pend

Subsector erase or subsector erase resume to erase sus-

pend

50 – µs 1

Suspend latency Program 7 25 µs 2

Suspend latency Subsector erase 15 30 µs 2

Suspend latency Erase 15 30 µs 3

Notes: 1. Timing is not internally controlled.

2. Any READ command accepted.

3. Any command except the following are accepted: SECTOR, SUBSECTOR, or BULK ERASE;

WRITE STATUS REGISTER; WRITE NONVOLATILE CONFIGURATION REGISTER; and PRO-

GRAM OTP.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Program/Erase Specifications

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Revision History

Rev. K – 07/18

• Added Icc1 and Icc2 for UT in DC Characteristics and Operating Conditions

• Added tSHRH in AC RESET Conditions table

Rev. J – 03/18

• Added Important Notes and Warnings section for further clarification aligning to in-

dustry standards

• Added DEEP POWER-DOWN Operations

• Added Active Power, Standby Power, and Deep Power-Down modes

• Added figure for Serial Input Timing DTR

• Added tCRC in AC Characteristics and Operating Conditions

Rev. I – 07/17

• Added UT device (operating temperature range: from –40°C to +125°C)

• Added Output Timing for DTR figure in AC Reset Specifications

Rev. H – 05/17

• Reviewed data in hold time in AC table

Rev. G – 07/16

• Changed W# description

• Updated DTR (MAX) frequency to 90 MHz

• Changed Status Register table

• Changed Nonvolatile Configuration Register and Volatile Configuration Register ta-

bles

• Added Initial Delivery Status

Rev. F – 06/16

• Added general purpose read register notes to Command Definitions table

Rev. E – 01/16

• Added code 60h for BULK ERASE Command in ERASE Operations in Command Set

table in Command Definitions section

• Added note for READ and WRITE REGISTER Operations tables

• Updated ICC1, and added ICC1 and ICC2 for automotive in DC Current Characteristics

and Operating Conditions table

Rev. D – 10/15

• Typo correction in Output Timing figure in AC Reset Specifications section

256Mb, 1.8V Multiple I/O Serial Flash Memory

Revision History

CCMTD-1725822587-3458

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Rev. C – 09/15

• Revised wrap table

• Revised supported clock frequencies DTR

• Change bit 3 setting of Enhanced Volatile Configuration Register from 0 to 1

• Revised AC table

Rev. B – 08/15

• Change STR frequency at 166Mhz and DTR frequency at 80Mhz

• Revised cover page part number to: MT25QU256ABA

• Revised signal assignments

• Revised supported clock frequencies to adapt at 166 Mhz and 80 Mhz

• Revised supported clock frequencies with a note to reference TN-25-07: Tuning Data

Pattern for MT25Q and MT25T Devices

• Revised serial flash discovery parameter with a note to reference TN-25-06: SFDP for

MT25Q Family

• Added 166Mhz 80MHz information for ICC3 in DC specifications

• Updated Icc4, Icc5, and Icc6

• Preliminary to production

Rev. A – 07/14

• Initial release

8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000

www.micron.com/products/support Sales inquiries: 800-932-4992

Micron and the Micron logo are trademarks of Micron Technology, Inc.

All other trademarks are the property of their respective owners.

This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.

Although considered final, these specifications are subject to change, as further product development and data characterization some-

times occur.

256Mb, 1.8V Multiple I/O Serial Flash Memory

Revision History

CCMTD-1725822587-3458

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