Mee. SOT-23 Plastic-Encapsulate Transistors Ni ~~. FMMT4124LT1 TRANSISTOR (NPN) 213 1.BASE 2.EMITTER 3.COLLECTOR 4 2 UNIT: mm ELECTRICAL CHARACTERISTICS (Tamp=25C unless otherwise specified) eae ede) ollector-base voltage ViaR)cB0:30V aren Tu, Tstg :-55C to+150C ating and storage junction temperature range Drain-source Breakdown Voltage Vi(BR)cBO ic=10n A, le=0 30 Collector Emitter Breakdown Voltage V(BR)CEO ic=1mA,IB=0 25 Vv Emitter-base Breakdown Voltage V{BR)EBO le=10n A,Ic=0 5 Collector Cut-off Current icBo Vcp=20V,le=0 0.05 | HA Emitter Cut-off Current JEBO VeBe=3VIc=0 0.05 | HA OC Current Gain hFe Vce=1V,Ic=2mA - 120 360 Collector-emitter Saturation Voltage VcEsat ic=50mA,1B=5mA 0.3 Vv Bsse -emitter Saturation Voitage VBEsat Ic=50mA,iB=5mA 0.95 |) V Transition Frequency ft VcE=20V,Ic=10mA,f=100MHz 300 MHz DEVICE MARKING :FMMT4124LT1=2C