MJE5852
HIGH VOLTAGE PNP POWER TRANSISTOR
■STMicroelec tronic s PREF ERRE D
SALESTYPE
■PNP TRANS IS TOR
■HIGH VOLTAGE CAPABILITY
APPLICATIONS:
■SWI TCHING RE G ULAT O RS
■MOTOR CONTROL
■INVERTERS
DESCRIPTION
The MJE5852 is manufactured using High
Voltage PNP Multi-Epitaxial technology for high
switching speed and high voltage cap ability.
It is intended for use in high frequency and
efficiency converters, switching regulators and
motor control.
®
INTERNAL SCHEMATI C DIAG RAM
September 2003
A BSO LUT E MAX IMU M RATIN GS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) -450 V
VCEO Collector-Emitter Voltage (IB = 0) -400 V
VEBO Emitter-Base Voltage (IC = 0) -7 V
ICCollector Current -8 A
ICM Collector Peak C urrent (tp < 5ms) -16 A
IBBase Current -4 A
IBM Base Peak Current (tp < 5ms) -8 A
Ptot Total Dissipation at Tc ≤ 25 oC80 W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 1.56
62.5
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE = -1.5V) VCE = -450 V -500 µA
IEBO Emitter Cut-off C urrent
(IC = 0) VEB = -6 V -1 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = -10 mA -400 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = -4 A IB = -1 A
IC = -8 A IB = -3 A -2
-5 V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = -4 A IB = -1 A -1.5 V
hFE∗DC Current Gain IC = -2 A VCE = -5 V
IC = -5 A VCE = -5 V 15
5
ts
tf
RESISTIVE LOAD
Storage Time
Fall Time IC = -4 A VCC = -250 V
IB1 = -IB2 = -1 A tp = 40 µs2
0.5 µs
µs
∗ P ulsed: P ulse duration = 300 µs, duty cycle 1.5 %
For PNP type voltage and current values are negative.
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.052
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10.00 10.40 0.394 0.409
L2 16.40 0.645
L4 13.00 14.00 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154
M 2.60 0.102
DIA. 3.75 3.85 0.147 0.151
P011CI
TO-220 MECHANICAL DATA
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird pa rties w hich ma y resu lt from i ts use . No li cen se i s
granted by implication or otherwise under any patent or paten t rights of STMicroelectronics. Specif ication mentioned in this publication are
subject to change without notice. This publication supersedes and replac es all information previously supplie d. S TMicroelectronics products
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
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