AO3401A 30V P-Channel MOSFET General Description Product Summary The AO3401A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable for use as a load switch or other general applications. ID (at VGS=-10V) VDS -30V -4.0A RDS(ON) (at VGS=-10V) < 50m RDS(ON) (at VGS =-4.5V) < 60m RDS(ON) (at VGS=-2.5V) < 85m SOT23 Top View D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25C Continuous Drain Current Pulsed Drain Current C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 3: Mar. 2011 Steady-State Steady-State A 1.4 W 0.9 TJ, TSTG Symbol t 10s V -27 PD TA=70C 12 -3.2 IDM TA=25C Units V -4 ID TA=70C Maximum -30 RJA RJL www.aosmd.com -55 to 150 Typ 70 100 63 C Max 90 125 80 Units C/W C/W C/W Page 1 of 5 AO3401A Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250A, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250A -0.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -27 TJ=55C -5 VDS=0V, VGS= 12V 100 VGS=-10V, ID=-4.0A Static Drain-Source On-Resistance TJ=125C 50 62 75 m m 85 m 17 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current -0.7 DYNAMIC PARAMETERS Input Capacitance Ciss Gate resistance 41 60 VSD Rg V A 60 IS Reverse Transfer Capacitance -1.3 nA 47 VDS=-5V, ID=-4.0A Crss -0.9 A VGS=-4.5V, ID=-3.5A Forward Transconductance Output Capacitance Units VGS=-2.5V, ID=-2.5A gFS Coss Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 4 S -1 V -2 A 645 pF 80 pF 55 pF 7.8 12 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 14 nC Qg(4.5V) Total Gate Charge 7 nC VGS=-10V, VDS=-15V, ID=-4.0A Qgs Gate Source Charge 1.5 nC Qgd Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 6.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=-10V, VDS=-15V, RL=3.75, RGEN=3 IF=-4.0A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-4.0A, dI/dt=100A/s 3.5 ns 41 ns 9 ns 11 ns nC 3.5 A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: Mar. 2011 www.aosmd.com Page 2 of 5 AO3401A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 10V VDS=-5V 4.5V 20 15 -ID(A) -ID (A) 15 -2.5V 10 10 5 25C 125C 5 VGS=-2.0V 0 0 0 1 2 3 4 0 5 0.5 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 100 Normalized On-Resistance 1.8 80 RDS(ON) (m ) 1 VGS=-2.5V 60 VGS=-4.5V 40 VGS=-10V 1.6 VGS=-10V ID=-4A 1.4 VGS=-4.5V 17 ID=-3.5A 5 1.2 VGS=-2.5V ID=-2.5A 1 2 10 0.8 20 0 2 4 6 8 0 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 150 1.0E+01 ID=-4A 130 1.0E+00 110 1.0E-01 90 IS (A) RDS(ON) (m ) 40 125C 1.0E-02 125C 1.0E-03 70 50 25C 1.0E-04 25C 1.0E-05 30 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 3: Mar. 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO3401A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=-15V ID=-4A 800 8 Capacitance (pF) -VGS (Volts) Ciss 6 4 600 400 2 200 0 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics 15 Coss Crss 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 100.0 TA=25C 10s RDS(ON) limited 100s 1.0 1ms 10ms TJ(Max)=150C TA=25C 0.1 1000 Power (W) -ID (Amps) 10.0 100 10 10s DC 0.0 1 0.01 0.1 1 10 100 0.00001 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=125C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 3: Mar. 2011 www.aosmd.com Page 4 of 5 AO3401A Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 3: Mar. 2011 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5