2N5114/5115/5116 P-Channel JFETs Product Summary Part Number VGS(off) (V) rDS(on) Max () ID(off) Typ (pA) tON Max (ns) 2N5114 5 to 10 75 -10 16 2N5115 3 to 6 100 -10 30 2N5116 1 to 4 150 -10 42 Features Benefits Applications Low On-Resistance: 2N5114 <75 Fast Switching--tON: 16 ns High Off-Isolation--ID(off): -10 pA Low Capacitance: 6 pF Low Insertion Loss Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response Eliminates Additional Buffering Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters Description The 2N5114 series consists of p-channel JFET analog switches designed to provide low on-resistance, good off-isolation, and fast switching. These JFETs are optimized for use in complementary switching applications with the Siliconix 2N4856A series. The 2N5114 series is available with JAN, JANTX, or JANTXV level processing, (see 2N5114 JAN series data sheet). TO-206AA (TO-18) S 1 2 3 D G Case Top View Absolute Maximum Ratings Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . -55 to 200C Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . 300C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 3 mW/C above 25C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70260. Applications information may also be obtained via FaxBack, request document #70597. Siliconix P-37410--Rev. D, 04-Jul-94 1 2N5114/5115/5116 Specificationsa Limits 2N5114 Parameter Symbol Test Conditions Typb V(BR)GSS IG = 1 mA , VDS = 0 V 45 VGS(off) VDS = -15 V, ID = -1 nA Min 30 Max 2N5115 Min Max 2N5116 Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc IDSS Gate Reverse Current IGSS Gate Operating Currentd IG VGS = 0 V TA = 150C VDG = -15 V, ID = -1 mA ID(off) D( ff) VDS = -15 15 V TA = 150 C 150C Drain-Source On-Voltage VDS(on) VGS = 0 V 5 10 -30 -90 VDS = -15 V VGS = 20 V, VDS = 0 V VDS = -15 V Drain Cutoff Current VDS = -18 V 30 -60 -5 -25 mA 500 pA 1 1 mA -5 VGS = 5 V -10 -0.02 VGS = 7 V -0.02 VGS = 5 V -0.02 ID = -15 mA -1.0 ID = -7 mA -0.7 ID = -3 mA -0.5 IG = -1 mA , VDS = 0 V -15 500 VGS = 12 V VGS(F) 4 1 -10 Gate-Source Forward Voltage 1 500 VGS = 7 V VGS = 0 V, ID = -1 mA 6 5 -10 rDS(on) V 3 0.01 VGS = 12 V Drain-Source On-Resistance 30 -0.7 -500 pA -500 -500 -1 mA -1 -1 -1.3 -0.8 V -0.6 75 100 150 W -1 -1 -1 V Dynamic Common-Source Forward Transconductance d gfs Common-Source Output Conductanced gos Drain-Source On-Resistance Common-Source Input Capacitance Common Source Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltaged VDSS = -15 V, ID = -1 mA f = 1 kHz rds(on) VGS = 0 V, ID = 0 mA , f = 1 kHz Ciss VDS = -15 V, VGS = 0 V f = 1 MHz Crss en VDS = 0 V f = 1 MHz 4.5 mS 20 mS 75 100 150 20 25 25 25 VGS = 12 V 5 7 VGS = 7 V 6 VGS = 5 V 6 VDS = 10 V, ID = 10 mA f = 1 kHz W ppF 7 7 nV Hz 20 Switching Turn On Time Turn-On Turn Off Time Turn-Off td(on) tr td(off) See Switching Circuit tf Notes a. TA = 25C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW 300 ms duty cycle 3%. d. This parameter not registered with JEDEC. 2 6 10 12 10 20 30 6 8 10 15 30 50 ns PSCIA Siliconix P-37410--Rev. D, 04-Jul-94 2N5114/5115/5116 Typical Characteristics On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage IDSS -80 rDS 120 -60 80 -40 40 -20 rDS @ ID = -1 mA, VGS = 0 V IDSS @ VDS = -15 V, VGS = 0 V 0 0 0 2 4 6 8 250 gfs and gos @ VDS = -15 V VGS = 0 V, f = 1 kHz 15 200 gfs 12 9 100 6 50 3 10 0 VGS(off) - Gate-Source Cutoff Voltage (V) rDS(on) - Drain-Source On-Resistance ( W ) rDS(on) - Drain-Source On-Resistance ( W ) 150 3V 5V 0 -10 180 VGS(off) = 1.5 V 3V 120 5V 60 0 -55 -100 -35 -15 ID - Drain Current (mA) tON @ ID = -5 mA 45 65 85 105 125 tf VGS(off) = 1.5 V 16 Switching Time (ns) Switching Time (ns) 30 25 Turn-Off Switching 20 tr approximately independent of ID VDD = -10 V, RG = 220 W VGS(H) = 10 V, VGS(L) = 0 V 40 5 TA - Temperature (C) Turn-On Switching 50 0 10 240 50 -1 8 ID = -1 mA rDS changes X 0.7%/C VGS(off) = 1.5 V 100 6 On-Resistance vs. Temperature 300 TA = 25C 200 4 2 VGS(off) - Gate-Source Cutoff Voltage (V) On-Resistance vs. Drain Current 250 150 gos g - Output Conductance ( mS) 160 18 g fs - Forward Transconductance (mS) -100 I DSS - Saturation Drain Current (mA) rDS(on) - Drain-Source On-Resistance ( W ) 200 Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage tON @ ID = -10 mA 20 5V 12 td(off) VGS(off) = 1.5 V 8 5V 4 10 tr @ ID = -5 mA VDD = -10 V, VGS(H) = 10 V, VGS(L) = 0 V 0 0 0 1 2 3 4 VGS(off) - Gate-Source Cutoff Voltage (V) Siliconix P-37410--Rev. D, 04-Jul-94 5 0 -3 -6 -9 -12 -15 ID - Drain Current (mA) 3 2N5114/5115/5116 Typical Characteristics (Cont'd) Output Characteristics -2 Output Characteristics -2 VGS = 0 V 0.2 V 0.4 V -1.6 I D - Drain Current (mA) I D - Drain Current (mA) -1.6 VGS = 0 V 1.5 V 0.5 V 1.0 V -1.2 2.0 V -0.8 -0.4 0.6 V -1.2 -0.8 0.8 V -0.4 VGS(off) = 3 V VGS(off) = 1.5 V 0 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 0 -0.2 VDS - Drain-Source Voltage (V) Output Characteristics -25 VGS(off) = 3 V -0.6 3V -1.6 I D - Drain Current (mA) 0.5 V -15 1.0 V -10 1.5 V 2V -1.2 4V 1V -0.8 -0.4 2.0 V VGS(off) = 5 V 0 0 0 -4 -8 -12 -16 0 -20 VDS - Drain-Source Voltage (V) -0.1 -0.2 -0.3 -0.4 -0.5 VDS - Drain-Source Voltage (V) Capacitance vs. Gate-Source Voltage 30 Gate Leakage Current 100 nA VDS = 0 V f = 1 MHz 10 nA 24 ID= -10 mA -1 mA I G - Gate Leakage Capacitance (pF) -1.0 VGS = 0 V VGS = 0 V -5 18 Ciss 12 Crss 6 TA = 125C 1 nA IGSS @ 125C 100 pA -10 mA 10 pA TA = 25C 1 pA -1 mA IGSS @ 25C 0.1 pA 0 0 4 8 12 16 VGS - Gate-Source Voltage (V) 4 -0.8 Output Characteristics -2 -20 I D - Drain Current (mA) -0.4 VDS - Drain-Source Voltage (V) 20 0 -10 -20 -30 -40 -50 VDG - Drain-Gate Voltage (V) Siliconix P-37410--Rev. D, 04-Jul-94 2N5114/5115/5116 Typical Characteristics (Cont'd) Transfer Characteristics VGS(off) = 1.5 V VDS = -15 V VGS(off) = 3 V -8 VDS = -15 V -32 -6 I D - Drain Current (mA) I D - Drain Current (mA) Transfer Characteristics -40 -10 TA = -55C 25C -4 -2 -24 TA = -55C 25C -16 -8 125C 125C 0 0 0 0.2 0.4 0.6 0.8 1.0 0 VGS - Gate-Source Voltage (V) Transfer Characteristics 4 5 VDS = -15 V (nV / Hz) -48 3 Noise Voltage vs. Frequency 100 -64 TA = -55C e n - Noise Voltage I D - Drain Current (mA) 2 VGS - Gate-Source Voltage (V) -80 VGS(off) = 5 V 1 25C -32 -16 125C 0 ID = -0.1 mA -1 mA 10 VDS = -10 V 1 0 1 2 3 4 5 10 100 1k 10 k 100 k Switching Time Test Circuit VDD 2N5114 2N5115 2N5116 -10 V -6 V -6 V VGG 20 V 12 V 8V RL* 430 W 910 W 2 kW RG* 100 W 220 W 390 W ID(on) -15 mA -7 mA -3 mA VGS(H) 0V 0V 0V VGS(L) -11 V -7 V -5 V Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz -VDD 1.2 kW VGS(L) 0.1 mF RG 7.5 kW 1.2 kW Sampling Scope Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF RL VGS(H) 51 W *Non-inductive Input Pulse VGG Sampling Scope 51 W 51 W See Typical Characteristics curves for changes. Siliconix P-37410--Rev. D, 04-Jul-94 5