2N5114/5115/5116
Siliconix
P-37410—Rev. D, 04-Jul-94 1
P-Channel JFETs
Product Summary
Part Number VGS(off) (V) rDS(on) Max () ID(off) Typ (pA) tON Max (ns)
2N5114 5 to 10 75 –10 16
2N5115 3 to 6 100 –10 30
2N5116 1 to 4 150 –10 42
Features Benefits Applications
Low On-Resistance: 2N5114 <75
Fast Switching—tON: 16 ns
High Off-Isolation—ID(off): –10 pA
Low Capacitance: 6 pF
Low Insertion Loss
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response
Eliminates Additional Buffering
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
Description
The 2N5114 series consists of p-channel JFET analog
switches designed to provide low on-resistance, good
off-isolation, and fast switching. These JFETs are
optimized for use in complementary switching applications
with the Siliconix 2N4856A series.
The 2N5114 series is available with JAN, JANTX, or
JANTXV level processing, (see 2N5114 JAN series data
sheet).
TO-206AA
(TO-18)
S
D
Top View
G
Case
1
23
Absolute Maximum Ratings
Gate-Drain Voltage 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-Source Voltage 30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current –50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –65 to 200C. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 200C. . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300C. . . . . . . . . . . . . . .
Power Dissipationa 500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 3 mW/C above 25C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70260.
Applications information may also be obtained via FaxBack, request document #70597.
2N5114/5115/5116
2 Siliconix
P-37410—Rev. D, 04-Jul-94
Specificationsa
Limits
2N5114 2N5115 2N5116
Parameter Symbol Test Conditions TypbMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = 1 mA , VDS = 0 V 45 30 30 30 V
Gate-Source Cutoff Voltage VGS(off) VDS = –15 V, ID = –1 nA 5 10 3 6 1 4
Saturation Drain Current
c
IDSS
VGS =0V
VDS = –18 V –30 –90
mA
Saturation
Drain
Currentc
I
DSS
V
GS =
0
V
VDS = –15 V –15 –60 –5 –25
mA
Gate Reverse Current
IGSS
VGS = 20 V, VDS = 0 V 5 500 500 500 pA
Gate
Reverse
Current
I
GSS TA = 150C 0.01 1 1 1 mA
Gate Operating CurrentdIGVDG = –15 V, ID = –1 mA –5
VGS = 12 V –10 –500
pA
VDS = –15 V VGS = 7 V –10 –500
pA
Drain Cutoff Current
ID( ff)
VGS = 5 V –10 –500
Drain
Cutoff
Current
I
D(off)
V 15 V
VGS = 12 V –0.02 –1
V
DS = –
15
V
T
A
= 150CVGS = 7 V –0.02 –1 mA
TA
150 C
VGS = 5 V –0.02 –1
ID = –15 mA –1.0 –1.3
Drain-Source On-Voltage VDS(on) VGS = 0 V ID = –7 mA –0.7 –0.8 V
ID = –3 mA –0.5 –0.6
Drain-Source
On-Resistance rDS(on) VGS = 0 V, ID = –1 mA 75 100 150 W
Gate-Source
Forward Voltage VGS(F) IG = –1 mA , VDS = 0 V –0.7 –1 –1 –1 V
Dynamic
Common-Source
Forward Transconductancedgfs VDS = –15 V, ID = –1 mA 4.5 mS
Common-Source
Output Conductancedgos
S
f = 1 kHz 20 mS
Drain-Source
On-Resistance rds(on) VGS = 0 V, ID = 0 mA , f = 1 kHz 75 100 150 W
Common-Source
Input Capacitance Ciss VDS = –15 V, VGS = 0 V
f = 1 MHz 20 25 25 25
Common-Source
V0V
VGS = 12 V 5 7 pF
Common Source
Reverse Transfer
Capacitance
Crss
V
DS =
0
V
f = 1 MHz VGS = 7 V 6 7
p
C
apac
i
tance
f
1
MHz
VGS = 5 V 6 7
Equivalent Input
Noise VoltagedenVDS = 10 V, ID = 10 mA
f = 1 kHz 20 nV⁄
√Hz
Switching
Turn On Time
td(on) 6 10 12
Turn
-
On
Time
tr
See Switching Circuit
10 20 30
ns
Turn Off Time
td(off)
See
Switching
Circuit
6 8 10
ns
Turn
-
Off
Time
tf15 30 50
Notes
a. TA = 25C unless otherwise noted. PSCIA
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Pulse test: PW 300 ms duty cycle 3%.
d. This parameter not registered with JEDEC.
2N5114/5115/5116
Siliconix
P-37410—Rev. D, 04-Jul-94 3
Typical Characteristics
200
0681042
160
0
–100
–80
–60
–40
–20
0
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
– Saturation Drain Current (mA)
IDSS
VGS(off) – Gate-Source Cutoff Voltage (V)
rDS @ ID = –1 mA, VGS = 0 V
IDSS @ VDS = –15 V, VGS = 0 V
IDSS
rDS
120
80
40
18
0
15
12
9
6
368102
250
200
150
100
50
0
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
gfs – Forward Transconductance (mS)
VGS(off) – Gate-Source Cutoff Voltage (V)
gfs and gos @ VDS = –15 V
VGS = 0 V, f = 1 kHz
gfs
gos
4
250
200
150
100
50
0–1 –10 –100
On-Resistance vs. Drain Current
ID – Drain Current (mA)
TA = 25C
VGS(off) = 1.5 V
3 V
5 V
300
–55 25 125
0
–15 85
On-Resistance vs. Temperature
TA – Temperature (C)
VGS(off) = 1.5 V
3 V 5 V
ID = –1 mA
rDS changes X 0.7%/C
240
180
120
60
–35 5 45 65 105
Turn-On Switching
VGS(off) – Gate-Source Cutoff Voltage (V)
tr approximately independent of ID
VDD = –10 V, RG = 220 W
VGS(H) = 10 V, VGS(L) = 0 V
tON @ ID = –10 mA
tON @ ID = –5 mA
50
05
40
20
10
0
30
12 3 4
tr @ ID = –5 mA
S
w
i
tc
hi
ng
Ti
me
(
ns
)
20
0 –9 –12–6–3 –15
16
12
8
4
0
Turn-Off Switching
ID – Drain Current (mA)
td(off) VGS(off) = 1.5 V
tf VGS(off) = 1.5 V
VDD = –10 V, VGS(H) = 10 V, VGS(L) = 0 V
5 V
5 V
Switching T ime (ns)
rDS(on) –
D
ra
i
n-
S
ource
O
n-
R
es
i
stance
()W
rDS(on) –
D
ra
i
n-
S
ource
O
n-
R
es
i
stance
()W
rDS(on) – Drain-Source On-Resistance ( )W
S)g – Output Conductance (m
2N5114/5115/5116
4 Siliconix
P-37410—Rev. D, 04-Jul-94
Typical Characteristics (Cont’d)
Output Characteristics
– Drain Current (mA)
ID
VDS – Drain-Source Voltage (V)
0.6 V
0.2 V
0.8 V
–2
0 –0.6 –0.8 –1.0
–1.6
–1.2
–0.8
–0.4
0
–0.4–0.2
VGS(off) = 1.5 V
VGS = 0 V 0.4 V
Output Characteristics
– Drain Current (mA)
ID
VDS – Drain-Source Voltage (V)
4 V
–2
0 –0.3 –0.4 –0.5
–1.6
–1.2
–0.8
–0.4
0
–0.2–0.1
VGS(off) = 5 V
Output Characteristics
– Drain Current (mA)
ID
VDS – Drain-Source Voltage (V)
1.0 V
0.5 V
1.5 V
2.0 V
–25
0 –12 –16 –20
–20
–15
–10
–5
0
–8–4
VGS(off) = 3 V VGS = 0 V
Output Characteristics
– Drain Current (mA)
ID
VDS – Drain-Source Voltage (V)
1.5 V
2.0 V
–2
0 –0.3 –0.4 –0.5
–1.6
–1.2
–0.8
–0.4
0
–0.2–0.1
VGS(off) = 3 V
VGS = 0 V
Capacitance vs. Gate-Source Voltage
Capacitance (pF)
VGS – Gate-Source Voltage (V)
VDS = 0 V
f = 1 MHz
Ciss
Crss
30
01216820
24
12
6
0
18
4
Gate Leakage Current
VDG – Drain-Gate Voltage (V)
TA = 125C
TA = 25C
–10 mA
10 nA
100 pA
100 nA
1 nA
– Gate Leakage
IG
10 pA
1 pA
0.1 pA
0 –40–20–10 –50
–30
IGSS @ 125C
IGSS @ 25C
–1 mA ID= –10 mA
VGS = 0 V
1 V
2 V
3 V
1.0 V
0.5 V
–1 mA
2N5114/5115/5116
Siliconix
P-37410—Rev. D, 04-Jul-94 5
Typical Characteristics (Cont’d)
0012345
–16
–32
–48
–64
–80 Transfer Characteristics
TA = –55C
125C
– Drain Current (mA)
ID
00 0.2 0.4 0.6 0.8 1.0
–2
–4
–6
–8
–10
VGS – Gate-Source Voltage (V)
TA = –55C
125C
– Drain Current (mA)
ID
Transfer Characteristics Transfer Characteristics
TA = –55C
125C
– Drain Current (mA)
ID
VGS – Gate-Source Voltage (V)
–40
0345
–32
–16
–8
0
–24
12
10 100 1 k 100 k10 k
100
10
1
Noise Voltage vs. Frequency
VDS = –10 V
ID = –0.1 mA
–1 mA
25C
VDS = –15 VVGS(off) = 1.5 V
25C
VDS = –15 VVGS(off) = 3 V
VDS = –15 VVGS(off) = 5 V
25C
nVen/Hz
√)(– Noise Voltage
Switching Time Test Circuit
2N5114 2N5115 2N5116
VDD –10 V –6 V –6 V
VGG 20 V 12 V 8 V
RL* 430 W910 W2 kW
RG* 100 W220 W390 W
ID(on) –15 mA –7 mA –3 mA
VGS(H) 0 V 0 V 0 V
VGS(L) –11 V –7 V –5 V
*Non-inductive
Input Pulse Sampling Scope
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
See Typical Characteristics curves for changes.
7.5 kW
51 W
1.2 kW
51 W
51 W
1.2 kW
0.1 mF
Sampling
Scope
VGG –VDD
RG
VGS(H)
VGS(L)
RL
