IRLML2244TRPbF
2www.irf.com
G
D
S
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage -20 ––– ––– V
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.01 ––– V/°C
––– 42 54
––– 71 95
V
GS(th)
Gate Threshold Voltage -0.4 ––– -1.1 V
I
DSS
––– ––– 1
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– -100
Gate-to-Source Reverse Leakage ––– ––– 100
R
G
Internal Gate Resistance ––– 8.9 ––– Ω
gfs Forward Transconductance 6.5 ––– ––– S
Q
g
Total Gate Charge ––– 6.9 –––
Q
gs
Gate-to-Source Charge ––– 1.0 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 2.9 –––
t
d(on)
Turn-On Delay Time ––– 7.0 –––
t
r
Rise Time ––– 12 –––
t
d(off)
Turn-Off Delay Time ––– 34 –––
t
f
Fall Time ––– 25 –––
C
iss
Input Capacitance ––– 570 –––
C
oss
Output Capacitance ––– 160 –––
C
rss
Reverse Transfer Capacitance ––– 110 –––
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– -1.2 V
t
rr
Reverse Recovery Time ––– 21 32 ns
Q
rr
Reverse Recovery Charge ––– 9.0 14 nC
––– –––
––– –––
pF
A
-1.3
-18
V
DD
=-10V
d
nA
nC
ns
V
DS
= V
GS
, I
D
= -10μA
V
DS
=-16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
R
DS(on)
V
GS
= -2.5V, I
D
= -3.4A
d
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current μA
mΩ
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -4.5V, I
D
= -4.3A
d
MOSFET symbol
showing the
V
DS
=-10V
Conditions
V
GS
= -4.5V
V
GS
= 0V
V
DS
= -16V
ƒ = 1.0KHz
R
G
= 6.8Ω
V
GS
= -4.5V
d
di/dt = 100A/μs
d
V
GS
= 12V
V
GS
= -12V
T
J
= 25°C, I
S
= -4.3A, V
GS
= 0V
d
integral reverse
p-n junction diode.
V
DS
= -10V, I
D
=-4.3A
I
D
= -4.3A
I
D
= -1A
T
J
= 25°C, V
R
= -16V, I
F
=-4.3A