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VRSM VRRM Type
V V
1200 1200 VUO 18-12DT8
1400 1400 VUO 18-14DT8
1600 1600 VUO 18-16DT8
Symbol Test Conditions Maximum Ratings
IdAV TC = 85°C, module 14 A
IdAVM TC = 63°C, module 18 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 300 A
VR = 0 t = 8.3 ms (60 Hz), sine 330 A
TVJ = TVJM t = 10 ms (50 Hz), sine 270 A
VR = 0 t = 8.3 ms (60 Hz), sine 300 A
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 450 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 460 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 365 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 380 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+150 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL £ 1 mA t = 1 s 3000 V~
Md Mounting torque (M5) 2 ± 10 % Nm
(10-32 UNF) 18 ± 10 % lb.in.
Weight typ. 22 g
Three Phase IdAVM = 18 A
Rectifier Bridges VRRM = 1200-1600 V
with Semi Fast Diodes
Features
lPackage with 1/4" fast-on terminals
lIsolation voltage 3000 V~
lPlanar passivated chips
lBlocking voltage up to 1600 V
lLow forward voltage drop
lUL registered E 72873
Applications
lSupplies for DC power equipment
lInput rectifiers for PWM inverter
lBattery DC power supplies
lField supply for DC motors
Advantages
lEasy to mount with one screw
lSpace and weight savings
lImproved temperature and power
cycling
lUp to 10 dB lower EMI/RFI
compared to standard rectifier
- ~ ~ ~ + ~
~
~
+
-
Data according to IEC 60747
Symbol Test Conditions Characteristic Values
IR TVJ = 25°C; VR = VRRM £0.3 mA
TVJ = 125°C; VR = VRRM £5.0 mA
VF IF = 55 A; TVJ = 25°C £1.85 V
VT0 For power-loss calculations only 1.2 V
rT TVJ = TVJM 16 mW
trr TVJ = 25°C; IF = 10 A; £1.5 ms
-di/dt = 10 A/ms, VR = 1/2 VRRM
RthJC per diode; 120° el 9.3 K/W
per module 1.55 K/W
RthJK per diode; 120° e 10.2 K/W
per module 1.7 K/W
dS Creeping distance on surface 12.7 mm
dA Creepage distance in air 9.4 mm
a Max. allowable acceleration 50 m/s2
Dimensions in mm (1 mm = 0.0394")
032
VUO 18
Preliminary Data
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