DATA SH EET
Product data sheet
Supersedes data of April 1996 1996 Sep 03
DISCRETE SEMICONDUCTORS
1N4531; 1N4532
High-speed diodes
db
ook, halfpage
M3D050
1996 Sep 03 2
NXP Semiconductors Product data sheet
High-speed diodes 1N4531; 1N4532
FEATURES
•Hermetically sealed leaded glass
SOD68 (DO-34) package
•High switching speed: max. 4 ns
•Continuous reverse voltage:
max. 75 V
•Repetitive peak reverse voltage:
max. 75 V
•Repetitive peak fo rward current:
max. 450 mA.
APPLICATIONS
•High-speed s witching
•Protection diodes in reed relays.
DESCRIPTION
The 1N4531, 1N 4532 are high-speed switching diodes fabricate d in planar
technology, and encapsulated in hermetically sealed leaded glass
SOD68 (DO-34) packages.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
handbook, halfpage
MAM156
k
a
The diodes are type branded.
LIMITING VALUES
In accordance with the A bsolute Maxi mum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage −75 V
VRcontinuous revers e voltage −75 V
IFcontinuous forward current see Fig.2 −200 mA
IFRM repetitive peak forward current −450 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs−4 A
t = 1 ms −1 A
t = 1 s −0.5 A
Ptot total power dissipation Tamb = 25 °C−500 mW
Tstg storage temperature −65 +200 °C
Tjjunction temperature −200 °C
1996 Sep 03 3
NXP Semiconductors Pr oduct data shee t
High-speed diodes 1N4531; 1N4532
ELECTRICAL CHARACTERISTIC S
Tj = 25 °C; unless otherwise specified.
THERMAL CHARACTE RISTICS
Note
1. Device mounted o n a printed circuit-board w i thout metalliza tion pad.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VFforward voltage IF = 10 mA; see Fig.3 −1 000 mV
IRreverse current see Fig.5
IN4531 VR = 20 V −25 nA
VR = 20 V; Tj = 150 °C−50 µA
IN4532 VR = 50 V −100 nA
VR = 50 V; Tj = 150 °C−100 µA
Cddiode capacitan ce f = 1 MHz; VR = 0; see Fig.6
IN4531 −4pF
IN4532 −2pF
trr reverse recove ry time when switched from IF = 10 mA to
IR = 60 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
IN4531 −4ns
IN4532 −2ns
reverse recove ry time when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured
at IR = 1 mA; see Fig.7
IN4532 −4ns
Vfr forward recove ry voltage when switched from IF = 100 mA;
tr ≤ 30 ns; see Fig.8 −3 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point lead length 5 mm 120 K/W
Rth j-a thermal resistance from junction to ambient lead length 5 mm; note 1 350 K/W
1996 Sep 03 4
NXP Semiconductors Pr oduct data shee t
High-speed diodes 1N4531; 1N4532
GRAPHICAL DATA
Lead length 5 mm.
Fig.2 Maximum permissible co ntinuous forwar d
current as a function of ambient temperature.
handbook, halfpage
0 100 200
300
200
0
100
MBG450
Tamb (oC)
IF
(mA)
Fig.3 Forward current as a function of forward
voltage.
handbook, halfpage
012
600
0
200
400
MBG458
VF (V)
IF
(mA)
(1) (2) (3)
(1) Tj = 175 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Fig.4 Maximum permissible non-repetitive peak forwar d current as a function of pulse duration.
Based on square wave currents.
Tj = 25 °C prior to surge.
handbook, full pagewidth
MBG704
10 tp (µs)
1
IFSM
(A)
10
2
10
−1
10
4
10
2
10
3
10
1
1996 Sep 03 5
NXP Semiconductors Pr oduct data shee t
High-speed diodes 1N4531; 1N4532
Fig.5 Reverse current as a function of junction
temperature.
handbook, halfpage
0 100 Tj (oC) 200
103
102
10−1
10−2
10
1
IR
(µA)
MGD010
VR = 50 V
Solid line; maximum values.
Dotted line; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
handbook, halfpage
01020
1.2
1.0
0.6
0.4
0.8
MGD004
VR (V)
Cd
(pF)
1996 Sep 03 6
NXP Semiconductors Pr oduct data shee t
High-speed diodes 1N4531; 1N4532
Fig.7 Reverse reco very voltage test circuit and waveforms.
handbook, full pagewidth
trr
(1)
IFt
output signal
trt
tp
10%
90%
VR
input signal
V = V I x R
RF S
R = 50
SΩIF
D.U.T.
R = 50
iΩ
SAMPLING
OSCILLOSCOPE
MGA881
(1) IR = 1 mA.
Fig.8 Forward recovery voltage test circuit and waveforms.
trt
tp
10%
90%
I
input
signal
R = 50
SΩ
I
R = 50
iΩ
OSCILLOSCOPE
Ω1 k Ω450
D.U.T.
MGA882
Vfr
t
output
signal
V
1996 Sep 03 7
NXP Semiconductors Pr oduct data shee t
High-speed diodes 1N4531; 1N4532
PACKAGE OUTLINE
Fig.9 SOD68 (DO-34).
Dimensions in mm.
handbook, full pagewidth
1.6
max 25.4 min 25.4 min
3.04
max
0.55
max
MSA212 - 1
1996 Sep 03 8
NXP Semiconductors Product data sheet
High-speed diodes 1N4531; 1N4532
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published
and may differ in case of multiple devices. The latest product status information is available on th e Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratin gs only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Customer notification
This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were
made to the content, except for the legal definitions and disclaimer s.
Printed in The Netherlands Date of release: 1996 Sep 03
