1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160T.
1.2 Features
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency due to less heat generation
Reduces Printed-Circuit Board (PCB) area required
Cost-effective replacement for medium power transistors BCP52 and BCX52
1.3 Applications
Major application segments:
Automotive
Telecom infrastructure
Industrial
Power management :
DC-to-DC conversion
Supply line switching
Peripheral driver:
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load drivers (e.g. relays, buzzers and motor s)
1.4 Quick reference data
[1] Pulse test: tp ≤ 300 μs; δ≤0.02.
PBSS5160T
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 04 — 15 January 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - −60 V
ICcollector current - - −1A
ICM peak collector current t = 1 ms or limited
by Tj(max)
--−2A
RCEsat collector-emitter
saturation resistance IC=−1A;
IB=−100 mA [1] - 220 330 mΩ
© Nexperia B.V. 2017. All rights reserved
PBSS5160T_4
Product data sheet Rev. 04 — 15 January 2010 2 of 11
Nexperia PBSS5160T
60 V, 1 A PNP low VCEsat (BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1base
2emitter
3 collector
12
3
0
06aab2
59
2
1
3
Table 3. Ordering i nformation
Type number Package
Name Description Version
PBSS5160T - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code[1]
PBSS5160T *U6
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - −80 V
VCEO collector-emitter
voltage open base - −60 V
VEBO emitter-base voltage open collector - −5V
ICcollector current [1] -−0.9 A
[2] -−1A
ICM peak collector current t = 1 ms or limited
by Tj(max)
-−2A
IBbase current - −300 mA
IBM peak base current tp≤300 μs; δ≤0.02 - −1A
© Nexperia B.V. 2017. All rights reserved
PBSS5160T_4
Product data sheet Rev. 04 — 15 January 2010 3 of 11
Nexperia PBSS5160T
60 V, 1 A PNP low VCEsat (BISS) transistor
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Operated under pulse conditions: duty cycle δ≤20 %, pulse width tp≤10 ms.
Ptot total power dissipation Tamb ≤25 °C[1] -270mW
[2] -400mW
[1][3] -1.25W
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
(1) FR4 PCB, mounting pad for collector 1 cm2
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
0 40 80 160
Ptot
(mW)
(1)
(2)
500
0
400
120
300
200
100
mle128
Tamb (°C)
© Nexperia B.V. 2017. All rights reserved
PBSS5160T_4
Product data sheet Rev. 04 — 15 January 2010 4 of 11
Nexperia PBSS5160T
60 V, 1 A PNP low VCEsat (BISS) transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Operated under pulse conditions: duty cycle δ≤20 %, pulse width tp≤10 ms.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1] --465K/W
[2] --312K/W
[1][3] --100K/W
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance as a function of pulse duration; typical values
mle127
103
102
10
1
10−510−410−310−210−11
Zth
(K/W)
tp (s)
10 102103
δ = 1
0.75
0.33
0.05
0.02
0.01
0
0.5
0.2
0.1
© Nexperia B.V. 2017. All rights reserved
PBSS5160T_4
Product data sheet Rev. 04 — 15 January 2010 5 of 11
Nexperia PBSS5160T
60 V, 1 A PNP low VCEsat (BISS) transistor
7. Characteristics
[1] Pulse test: tp≤300 μs; δ≤0.02.
Table 7. Characteristics
Tamb =25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off
current VCB =−60 V; IE=0A - - −100 nA
VCB =−60 V; IE=0A;
Tj=150°C--−50 μA
ICES collector-emitter
cut-off current VCE =−60 V; VBE =0V - - −100 nA
IEBO emitter-base cut-off
current VEB =−5V; I
C=0A - - −100 nA
hFE DC current gain VCE =−5V
IC=−1 mA 200 350 -
IC=−500 mA [1] 150 250 -
IC=−1A [1] 100 160 -
VCEsat collector-emitter
saturation voltage IC=−100 mA; IB=−1mA - −110 −160 mV
IC=−500 mA;
IB=−50 mA -−120 −175 mV
IC=−1A; I
B=−100 mA [1] -−220 −330 mV
RCEsat collector-emitter
saturation resistance IC=−1A; I
B=−100 mA [1] - 220 330 mΩ
VBEsat base-emitter
saturation voltage IC=−1A; I
B=−50 mA - −0.95 −1.1 V
VBEon base-emitter
turn-on voltage VCE =−5V; I
C=−1A - −0.82 −0.9 V
fTtransition frequency VCE =−10 V;
IC=−50 mA; f = 1 00 M Hz 150 220 - MHz
Cccollector capacitance VCB =−10 V; IE=i
e=0A;
f=1MHz -915pF
© Nexperia B.V. 2017. All rights reserved
PBSS5160T_4
Product data sheet Rev. 04 — 15 January 2010 6 of 11
Nexperia PBSS5160T
60 V, 1 A PNP low VCEsat (BISS) transistor
VCE =−5V
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Tamb =25°C
Fig 3. DC current gain as a function of collector
current; typical values Fig 4. Collector current as a fun ction of
collector-emitter voltage; typical values
VCE =−5V
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
IC/IB=20
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
Fig 5. Base-emitter voltage as a function of collector
current; typical values Fig 6. Base-emitter saturation voltage as a function
of collector current; typical values
mle124
0
600
200
400
−10
−1
−1−10
I
C
(mA)
h
FE
−10
2
−10
3
−10
4
(1)
(2)
(3)
mle125
0−5
−2
0
−0.4
−0.8
−1.2
−1.6
−1
VCE (V)
IC
(A)
−2−3−4
−40
−36−32
−28−24
−12
−8
−16
−4
IB (mA) = − 20
mle122
0
−1.2
−0.4
−0.8
−10−1−1−10
IC (mA)
VBE
(V)
−102−103−104
(1)
(3)
(2)
−0.2
−1.2
−0.4
−0.6
−0.8
−1
mle123
−10−1−1
(1)
−10
IC (mA)
VBEsat
(V)
−102−103−104
(3)
(2)
© Nexperia B.V. 2017. All rights reserved
PBSS5160T_4
Product data sheet Rev. 04 — 15 January 2010 7 of 11
Nexperia PBSS5160T
60 V, 1 A PNP low VCEsat (BISS) transistor
IC/IB=20
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
IC/IB=10
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values Fig 8. Collector-emit ter saturation voltage as a
function of collector current; typical values
Tamb =25°C
(1) IC/IB= 100
(2) IC/IB=50
IC/IB=20
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values Fig 10. Collector-emitter satur ation resistance as a
function of collector current; typical values
mle126
−10
−1
−10
−1
−10
−2
−10
−1
−1−10
I
C
(mA)
V
CEsat
(V)
−10
2
−10
3
−10
4
(3)
(1)
(2)
mle119
−1
−10
−1
−10
−2
−10
−3
−10
−1
−1−10
I
C
(mA)
V
CEsat
(V)
−10
2
−10
3
−10
4
(3)
(1)
(2)
mle120
−10
−1
−10
−1
−10
−2
−10
−1
−1−10
I
C
(mA)
V
CEsat
(V)
−10
2
−10
3
−10
4
(1)
(2)
mle121
103
102
1
10−1
10
−10−1−1
RCEsat
(Ω)
IC (mA)
−10 −102−103−104
(3)
(1)
(2)
© Nexperia B.V. 2017. All rights reserved
PBSS5160T_4
Product data sheet Rev. 04 — 15 January 2010 8 of 11
Nexperia PBSS5160T
60 V, 1 A PNP low VCEsat (BISS) transistor
8. Package outline
9. Packing information
[1] For further information and the availability of packing methods, see Section 12.
Fig 11. Package outline SOT23 (TO-236AB)
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
12
3
Table 8. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 10000
PBSS5160T SOT23 4 mm pitch, 8 mm tape and reel -215 -235
© Nexperia B.V. 2017. All rights reserved
PBSS5160T_4
Product data sheet Rev. 04 — 15 January 2010 9 of 11
Nexperia PBSS5160T
60 V, 1 A PNP low VCEsat (BISS) transistor
10. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PBSS5160T_4 20100115 Product data sheet - PBSS5160T_N_3
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate .
•Table 1 “Quick reference data”: amended
•Section 4 “Marking”: amended
•Figure 4: updated
•Figure 11: superseded by minimized package outline drawin g
•Section 9 “Packing information”: added
•Section 11 “Legal information”: updated
PBSS5160T_N_3 20080718 Product data sheet - PBSS5160T_2
PBSS5160T_2 20040527 Product specification - PBSS5160T_1
PBSS5160T_1 20030623 Product specification - -
© Nexperia B.V. 2017. All rights reserved
PBSS5160T_4
Product data sheet Rev. 04 — 15 January 2010 10 of 11
Nexperia PBSS5160T
60 V, 1 A PNP low VCEsat (BISS) transistor
11 . Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device (s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nexperia.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warrant ies as to t he accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short dat a sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full informatio n see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
11.3 Disclaimers
General — Information in this document is beli eved to be accurate and
reliable. However, Nexperia does not give any representations or
warranties, expressed or impli ed, as to the accuracy or completeness of such
information and shall have no liability for th e co nsequences of use of such
information.
Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia accepts no liability for inclusion and/or use of
Nexperia products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ra tings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other co nditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may af fect device reliability.
Terms and conditions of sale — Nexperia products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nexperia.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by Nexperia. In case of
any inconsistency or conflict between inf ormation in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Not hing in this document may be interpret ed or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, paten ts or
other industrial or intellectual property right s.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All refe renced brands, produc t names, service names and trademarks
are the property of their respective ow ners.
12. Contact information
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product develop ment.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
Nexperia PBSS5160T
60 V, 1 A PNP low VCEsat (BISS) transistor
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Packing information . . . . . . . . . . . . . . . . . . . . . 8
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Contact information. . . . . . . . . . . . . . . . . . . . . 10
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
15 January 2010
