MMBT2222LT1G. - ON SEMICONDUCTOR

October, 2016 − Rev. 11 1Publication Order Number:

MMBT2222LT1/D

MMBT2222L, MMBT2222AL,

SMMBT2222AL

General Purpose Transistors

NPN Silicon

Features

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage MMBT2222L

MMBT2222AL, SMMBT2222AL

VCEO 30

Vdc

Collector−Base Voltage MMBT2222L

MMBT2222AL, SMMBT2222AL

VCBO 60

Vdc

Emitter−Base Voltage MMBT2222L

MMBT2222AL, SMMBT2222AL

VEBO 5.0

6.0

Vdc

Collector Current − Continuous IC600 mAdc

Collector Current − Peak (Note 3) ICM 1100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 1) TA = 25°C

Derate above 25°C

PD225

1.8 mW

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W

Total Device Dissipation Alumina

Substrate (Note 2) TA = 25°C

Derate above 25°C

PD300

2.4 mW

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

3. Reference SOA curve.

SOT−23

CASE 318

STYLE 6

MARKING DIAGRAM

xxx = 1P or M1B

M = Date Code*

G= Pb−Free Package

COLLECTOR

BASE

EMITTER

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

xxx M G

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MMBT2222L, MMBT2222AL, SMMBT2222AL

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222

MMBT2222A V(BR)CEO 30

40 −

−Vdc

Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) MMBT2222

MMBT2222A V(BR)CBO 60

75 −

−Vdc

Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) MMBT2222

MMBT2222A V(BR)EBO 5.0

6.0 −

−Vdc

Collector Cutoff Current

(VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A, SMMBT2222A ICEX − 10 nAdc

Collector Cutoff Current (VCB = 50 Vdc, IE = 0) MMBT2222

(VCB = 60 Vdc, IE = 0) MMBT2222A, SMMBT2222A

(VCB = 50 Vdc, IE = 0, TA = 125°C) MMBT2222

(VCB = 60 Vdc, IE = 0, TA = 125°C) MMBT2222A, SMMBT2222A

ICBO −

−

0.01

mAdc

Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) MMBT2222A, SMMBT2222A IEBO − 100 nAdc

Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A, SMMBT2222A IBL − 20 nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 10 Vdc)

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C) MMBT2222A only

(IC = 150 mAdc, VCE = 10 Vdc) (Note 4)

(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 4)

(IC = 500 mAdc, VCE = 10 Vdc) (Note 4) MMBT2222

MMBT2222A, SMMBT2222A

hFE 35

100

−

300

−

Collector−Emitter Saturation Voltage (Note 4)

(IC = 150 mAdc, IB = 15 mAdc) MMBT2222

MMBT2222A, SMMBT2222A

(IC = 500 mAdc, IB = 50 mAdc) MMBT2222

MMBT2222A, SMMBT2222A

VCE(sat) −

−

0.4

0.3

1.6

1.0

Vdc

Base−Emitter Saturation Voltage (Note 4)

(IC = 150 mAdc, IB = 15 mAdc) MMBT2222

MMBT2222A, SMMBT2222A

(IC = 500 mAdc, IB = 50 mAdc) MMBT2222

MMBT2222A, SMMBT2222A

VBE(sat) −

0.6

−

1.3

1.2

2.6

2.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Note 5)

(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) MMBT2222

MMBT2222A, SMMBT2222A

fT250

300 −

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 8.0 pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT2222

MMBT2222A, SMMBT2222A

Cibo −

−30

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A

hie 2.0

0.25 8.0

1.25

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A

hre −

−8.0

4.0

X 10−4

Small−Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A

hfe 50

75 300

375

−

MMBT2222L, MMBT2222AL, SMMBT2222AL

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic UnitMaxMinSymbol

SMALL−SIGNAL CHARACTERISTICS

Output Admittance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A

hoe 5.0

25 35

200

mmhos

Collector Base Time Constant

(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MMBT2222A, SMMBT2222A rb, Cc− 150 ps

Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz)

MMBT2222A, SMMBT2222A NF − 4.0 dB

SWITCHING CHARACTERISTICS (MMBT2222A only)

Delay Time (VCC = 30 Vdc, VBE(off) = −0.5 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc) td− 10 ns

Rise Time tr− 25

Storage Time (VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc) ts− 225 ns

Fall Time tf− 60

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

5. fT is defined as the frequency at which |hfe| extrapolates to unity.

Figure 1. Turn−On Time Figure 2. Turn−Off Time

SWITCHING TIME EQUIVALENT TEST CIRCUITS

Scope rise time < 4 ns

*Total shunt capacitance of test jig, connectors, and oscilloscope.

+16 V

-2 V < 2 ns

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

1 kW

+30 V

200

CS* < 10 pF

+16 V

-14 V

< 20 ns

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

1 k

+30 V

200

CS* < 10 pF

-4 V

1N914

1000

100

200

300

500

700

1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700

IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

hFE, DC CURRENT GAIN

TJ = 125°C

25°C

-55°C

VCE = 1.0 V

VCE = 10 V

MMBT2222L, MMBT2222AL, SMMBT2222AL

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VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0

0.8

0.6

0.4

0.2

0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50

IB, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

TJ = 25°C

IC = 1.0 mA 10 mA 150 mA 500 mA

Figure 5. Turn−On Time

IC, COLLECTOR CURRENT (mA)

100

200

t, TIME (ns)

10 20 70

5.0

100

5.0 7.0 30 50 200

7.0

IC/IB = 10

TJ = 25°C

tr @ VCC = 30 V

td @ VEB(off) = 2.0 V

td @ VEB(off) = 0

3.0

2.0

300 500

500

t, TIME (ns)

5.0

7.0

100

200

300

Figure 6. Turn−Off Time

IC, COLLECTOR CURRENT (mA)

10 20 70 1005.0 7.0 30 50 200 300 500

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

t′s = ts - 1/8 tf

Figure 7. Frequency Effects

f, FREQUENCY (kHz)

4.0

6.0

8.0

2.0

0.1

Figure 8. Source Resistance Effects

RS, SOURCE RESISTANCE (OHMS)

NF, NOISE FIGURE (dB)

1.0 2.0 5.0 10 20 50

0.2 0.5

100

NF, NOISE FIGURE (dB)

0.01 0.02 0.05

RS = OPTIMUM

RS = SOURCE

RS = RESISTANCE

IC = 1.0 mA, RS = 150 W

500 mA, RS = 200 W

100 mA, RS = 2.0 kW

50 mA, RS = 4.0 kW

f = 1.0 kHz

IC = 50 mA

100 mA

500 mA

1.0 mA

4.0

6.0

8.0

2.0

50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k

MMBT2222L, MMBT2222AL, SMMBT2222AL

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Figure 9. Capacitances

REVERSE VOLTAGE (VOLTS)

3.0

5.0

7.0

2.0

0.1

CAPACITANCE (pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 50

0.2 0.3 0.5 0.7

Ccb

Ceb

Figure 10. Current−Gain Bandwidth Product

IC, COLLECTOR CURRENT (mA)

100

200

300

500

fT, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

VCE = 20 V

TJ = 25°C

Figure 11. Collector Emitter Saturation Voltage

vs. Collector Current Figure 12. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

10.10.010.001

0.01

0.1

0.10.010.001

0.2

0.3

0.5

0.7

0.8

1.0

1.1

1.3

Figure 13. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

10.10.010.001

0.2

0.3

0.5

0.6

0.7

0.9

1.1

1.2

CE(sat)

, COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

BE(on)

, BASE−EMITTER VOLTAGE (V)

IC/IB = 10

150°C

−55°C

25°C0.4

0.6

0.9

1.2 IC/IB = 10

150°C

−55°C

25°C

0.4

0.8

1.0

VCE = 1 V

150°C

−55°C

25°C

Figure 14. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

-0.5

+0.5

COEFFICIENT (mV/ C)

-1.0

-1.5

-2.5

RqVC for VCE(sat)

RqVB for VBE

-2.0

0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 50

MMBT2222L, MMBT2222AL, SMMBT2222AL

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Figure 15. Safe Operating Area

VCE (Vdc)

1001010.10.01

0.001

0.01

0.1

IC (A)

Single Pulse Test

@ TA = 25°C

Thermal Limit

100 ms

1 s

10 ms

1 ms

ORDERING INFORMATION

Device Specific Marking Code Package Shipping†

MMBT2222LT1G M1B SOT−23

(Pb−Free) 3000 / Tape & Reel

MMBT2222ALT1G,

SMMBT2222ALT1G 1P SOT−23

(Pb−Free) 3000 / Tape & Reel

MMBT2222LT3G M1B SOT−23

(Pb−Free) 10,000 / Tape & Reel

MMBT2222ALT3G,

SMMBT2222ALT3G 1P SOT−23

(Pb−Free) 10,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP

Capable.

MMBT2222L, MMBT2222AL, SMMBT2222AL

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PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF

THE BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

SOLDERING FOOTPRINT*

VIEW C

0.25

SEE VIEW C

DIM

AMIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.000

b0.37 0.44 0.50 0.015

c0.08 0.14 0.20 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.30 0.43 0.55 0.012

0.039 0.044

0.002 0.004

0.017 0.020

0.006 0.008

0.114 0.120

0.051 0.055

0.075 0.080

0.017 0.022

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

HE0.35 0.54 0.69 0.014 0.021 0.027

c0 −−− 10 0 −−− 10

T°°°°

TOP VIEW

SIDE VIEW END VIEW

2.90

0.80

DIMENSIONS: MILLIMETERS

0.90

PITCH

3X 0.95

RECOMMENDED

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

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MMBT2222LT1/D

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