ILD620/620GB QUAD CHANNEL ILQ620/620GB DUAL CHANNEL AC Input Phototransistor Optocoupler FEATURES * Identical Channel to Channel Footprint ILD620 Crosses to TLP620-2 ILQ620 Crosses to TLP620-4 * Current Transfer Ratio (CTR) at IF= 5.0 mA ILD/Q620: 50% Min. ILD/Q620GB: 100% Min. * Saturated Current Transfer Ratio (CTRSAT) at IF= 1.0 mA ILD/Q620: 60% Typ. ILD/Q620GB: 30% Min. * High Collector-Emitter Voltage, BVCEO=70 V * Dual and Quad Packages Feature: - Reduced Board Space - Lower Pin and Parts Count - Better Channel to Channel CTR Match - Improved Common Mode Rejection * Field-Effect Stable by TRIOS (TRansparent IOn Shield) * Isolation Test Voltage from Double Molded Package * Underwriters Lab File #E52744 * V VDE 0884 Available with Option 1 Dimensions in inches (mm) pin one ID 4 2 1 K=Cathode .255 (6.48) .268 (6.81) 5 7 6 8 .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. A/K 1 8 Collector A/K 2 7 Emitter A/K 3 6 Collector 5 Emitter A/K 4 .300 (7.62) typ. .031 (0.79) .130 (3.30) .150 (3.81) 10 .050 (1.27) .020 (.51 ) .035 (.89 ) .018 (.46) .022 (.56) 3-9 .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) .008 (.20) .012 (.30) .100 (2.54) typ. K=Cathode pin one ID 8 7 6 5 4 3 2 1 .255 (6.48) .265 (6.81) 9 D E Maximum Ratings (Each Channel) Emitter Forward Current .........................................60 mA Surge Current .............................................. 1.5 A Power Dissipation ...................................... 100 mW Derate from 25C .................................. 1.3 mW/C Detector Collector-Emitter Breakdown Voltage ............. 70 V Collector Current ......................................... 50 mA Collector Current (t <1.0 ms)...................... 100 mA Power Dissipation ...................................... 150 mW Derate from 25C.................................. 2.0 mW/C Package Isolation Test Voltage (t=1.0 sec.) ......... 5300 VRMS Package Dissipation, ILD620/GB ............. 400 mW Derate from 25C............................... 5.33 mW/C Package Dissipation, ILQ620/GB............. 500 mW Derate from 25C............................... 6.67 mW/C Creepage.................................................. 7.0 mm Clearance ................................................ 7.0 mm Isolation Resistance VIO=500 V, TA=25C............................... 1012 VIO=500 V, TA=100C............................ 10 11 Storage Temperature .................. -55C to +150C Operating Temperature .............. -55C to +100C Junction Temperature ................................... 100C Soldering Temperature (2.0 mm from case bottom) ...................... 260C 3 10 11 12 13 14 15 16 .779 (19.77 ) .790 (20.07) .030 (.76) .045 (1.14) A/K 1 16 Collector A/K 2 15 Emitter A/K 3 14 Collector A/K 4 13 Emitter A/K 5 12 Collector A/K 6 11 Emitter A/K 7 10 Collector A/K 8 9 Emitter .300 (7.62) typ. .031(.79) .130 (3.30) .150 (3.81) 4 .020(.51) .035 (.89) .100 (2.54)typ. .050 (1.27) 10 typ. .110 (2.79) .130 (3.30) .230 (5.84) .250 (6.35) 3-9 .008 (.20) .012 (.30) .018 (.46) .022 (.56) DESCRIPTION The ILD/Q620 and ILD/Q620GB are multi-channel input phototransistor optocouplers that use inverse parallel GaAs IRLED emitters and high gain NPN silicon phototransistors per channel. These devices are constructed using over/under leadframe optical coupling and double molded insulation resulting in a Withstand Test Voltage of 5300 VRMS. The LED parameters and the linear CTR characteristics combined with the TRIOS field-effect process make these devices well suited for AC voltage detection. The ILD/Q620GB with its low IF guaranteed CTRCEsat minimizes power dissipation of the AC voltage detection network that is placed in series with the LEDs. Eliminating the phototransistor base connection provides added electrical noise immunity from the transients found in many industrial control environments. 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-198 March 9, 2000-20 Characteristics Symbol Min. Typ. Max. Unit Condition Forward Voltage VF 1.0 1.15 1.3 V IF=10 mA Emitter Forward Current IF -- 2.5 20 A VR=0.7 V Capacitance CO -- 25 -- pF VF=0 V, f=1.0 MHz Thermal Resistance, Junction to Lead RTHJL -- 750 -- K/W -- CCE -- 6.8 -- pF VCE=5.0 V, f=1.0 MHz Collector-Emitter Leakage Current ICEO -- 10 100 nA VCE=24 V Collector-Emitter Leakage Current ICEO -- 2.0 50 A TA=85C, VCE=24 V Thermal Resistance, Junction to Lead RTHJL -- 500 -- K/W -- Channel/Channel CTR Match CTRX/CTRY 1 to 1 -- 3 to 1 -- IF=5.0 mA, VCE=5.0 V CTR Symmetry ICE(RATIO) 0.5 -- 2.0 -- ICE(IF=-5.0 mA)/ICE(IF=+5.0 mA) Off-State Collector Current ICE(OFF) -- 1.0 10 A VF=0.7 V, VCE=24 V Saturated Current Transfer Ratio CTRCEsat -- 60 -- % IF=1.0 mA, VCE=0.4 V Current Transfer Ratio CTRCE 50 80 600 % IF=5.0 mA, VCE=5.0 V Collector-Emitter Saturation Voltage VCEsat -- -- 0.4 V IF=8.0 mA, ICE=2.4 mA Saturated Current Transfer Ratio CTRCEsat 30 -- -- % IF=1.0 mA, VCE=0.4 V Current Transfer Ratio (Collector-Emitter) CTRCE 100 200 600 % IF=5.0 mA, VCE=5.0 V Collector-Emitter Saturation Voltage VCEsat -- -- 0.4 V IF=1.0 mA, ICE=0.2 mA Common Mode Rejection, Output High CMH -- 5000 -- V/s VCM=50 VP-P, RL=1.0 k, IF=0 mA Common Mode Rejection, Output Low CML -- 5000 -- V/s VCM=50 VP-P, RL=1.0 k, IF=10 mA Common Mode Coupling Capacitance CCM -- 0.01 -- pF -- Package Capacitance CI-O -- 0.8 -- pF VI-O=0 V, f=1.0 MHz -- VI-O=500 V -- VAC -- Detector Capacitance Package Transfer Characteristics ILD/Q620 ILD/Q620GB Isolation and Insulation Insulation Resistance RS -- 1012 Channel to Channel Insulation -- 500 -- Switching Times Figure 1. Non-saturated switching timing IF=10 mA F=10 KHz, DF=50% Figure 3. Non-saturated switching timing IF VCC=5 V VO RL=75 t PHL Figure 2. Saturated switching timing F=10 KHz, DF=50% V0 t PLH tS VCC=5 V 50% RL=1 K VO tD ton IF=10 mA 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) tF tR toff ILD/Q620/GB 2-199 March 9, 2000-20 Figure 5. LED forward current versus forward voltage Figure 4. Saturated switching timing VO IF - LED Forward Current - mA IF tD tR tPLH tS tPHL VTH=1.5 V tF 60 40 85C 20 25C 0 -55C -20 -40 -60 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 VF - LED Forward Voltage - V Non-saturated Symbol Typ. Unit Test Condition On Time tON 3.0 s IF=10 mA Rise Time tr 20 s VCC=5.0 V Off Time tOFF 2.3 s Fall Time tf 2.0 s Propagation H-L tPHL 1.1 s Propagation L-H tPLH 2.5 s Characteristic Symbol Typ. Unit Test Condition On Time tON 4.3 s IF=10 mA Rise Time tr 2.8 s VCC=5.0 V Off Time tOFF 2.5 s Fall Time tf 11 s Propagation H-L tPHL 2.6 s Iceo - Collector-Emitter - nA Figure 6. Collector-emitter leakage versus temperature Characteristic RL=75 50% of VPP 10 10 10 10 10 10 5 4 3 2 Vce = 10V 1 TYPICAL 0 10 -1 10 -2 -20 Saturated tPLH 7.2 Figure 7. Maximum LED current versus ambient temperature IF - Maximum LED Current - mA Propagation L-H 0 20 40 60 80 100 TA - Ambient Temperature - C RL=1.0 K VTH=1.5 V s 120 100 80 60 TJ (MAX)=100C 40 20 0 --60 -40 -20 0 20 40 60 80 100 Ta - Ambient Temperature - C Figure 8. Maximum LED power dissipation PLED - LED Power - mW 200 150 100 50 0 --60 -40 -20 0 20 40 60 80 100 Ta - Ambient Temperature - C 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) ILD/Q620/GB 2-200 March 9, 2000-20 IC -Normalized Collector Current 100 Normalized to 50 IF=10 mA VCE=5 V TA=25C 10 5.0 Figure 12. Normalization factor for non-saturated and saturated CTR TA=100C versus IF ILD/Q620GB ILD/Q620 2.5 1.0 0.5 0.1 1 5 10 Forward Current-IF (mA) If(pk) - Peak LED Current - mA CTRNF - Normalized CTR Factor Normalized to: VCE = 10 V, IF = 5 mA, TA = 25C CTRce(sat) VCE = 0.4 V NCTRce 1.0 NCTRce(sat) TA = 50C 0.0 .1 1 1.0 NCTRce 0.5 10 NCTRce(sat) TA = 100C 0.0 .1 1 10 IF - LED Current - mA 10000 Duty Factor 1000 100 .005 .01 .02 .05 .1 .2 .5 101 - Detector Power - mW NCTRce NCTRce(sat) 150 100 P DET CTRNF - Normalized CTR Factor Normalized to: VCE = 10 V, IF = 5 mA, TA = 25C CTRce(sat) VCE = 0.4 V 1 10 IF - LED Current - mA 100 200 TA = 70C 0.0 .1 10-3 10-2 10-1 Figure 14. Maximum detector power dissipation 2.0 0.5 DF = /t t - LED Pulse Duration - s Figure 11. Normalization factor for non-saturated and saturated CTR TA=70C versus IF 1.0 t 10 10-6 10-5 10-4 100 IF - LED Current - mA 1.5 100 Figure 13. Peak LED current versus peak duration, Tau 2.0 0.5 Normalized to: VCE = 10 V, IF = 5 mA, TA = 25C CTRce(sat) VCE = 0.4 V 1.5 20 Figure 10. Normalization factor for non-saturated and saturated CTR TA=50C versus IF 1.5 2.0 CTRNF - Normalized CTR Factor Figure 9. Collector current versus diode forward current 50 0 -60 100 -40 -20 0 20 40 60 80 Ta - Ambient Temperature - C 100 ICE - Collector Current - mA Figure 15. Maximum collector current versus collector voltage 1000 Rth=500C/W 100 10 25C 50C 75C 90C 1 .1 .1 2001 Infineon Technologies Corp. * Optoelectronics Division * San Jose, CA www.infineon.com/opto * 1-888-Infineon (1-888-463-4636) 1 10 100 VCE - Collector-Emitter Voltage - V ILD/Q620/GB 2-201 March 9, 2000-20