TLP627,TLP627-2,TLP627-4
1 2019-05-20
© 2019
Toshiba Electronic Devices & Storage Corporation
TOSHIBA Photocoupler IRED & Photo-Transistor
TLP627, TLP627-2, TLP627-4
Programmable Controllers
DC-output Module
Telecommunication
The TOSH IBA TLP627,-2 and -4 consist of an infrared emitting diode
optically coupled to a Darlington connected phototransistor which has an
integral base-emitter resistor to optimize switching speed and elevated
temperature characteristics.
The T LP627-2 offers two isolated channels in eight lead plastic DIP, while
the TLP62 7-4 provide four isolated channels per package.
Collector-Emitter Voltage : 300 V (min)
Current Transfer Ratio : 1000 % (min)
UL-recognized : UL 1577, File No.E67349
cUL-recognized : CSA Component Acceptance Service
No.5A File No.E67349
VDE-approved : EN 60747-5-5 (Note 1)
Note 1: When a VDE approved type is needed,
please designate the Option(D4).
TOSHIBA
11-5B2
Weight : 0.26 g
(typ.)
TOSHIBA
11-10C4
Weight : 0.54 g
(typ.)
TOSHIBA
11-20A3
Weight: 1.1 g
(typ.)
Unit: mm
TLP627-4
TLP627
TLP627
-2
Start of commercial production
1984-08
TLP627,TLP627-2,TLP627-4
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Toshiba Electronic Devices & Storage Corporation
1: ANODE
2: CATHO DE
3: EMITTER
4:COLLECTOR
1
2
3
4
TLP627
1
2
3
4
5
6
7
8
TLP627-2
1,3: ANODE
2,4: CATHODE
5,7: EMITTER
6,8:COLLECTOR
1
2
3
4
5
6
7
8
TLP627-4
9
10
11
12
13
14
15
16
1,3,5,7 : ANODE
2,4,6,8 : CATHODE
9,11,13,15 : EMITTER
10,12,14,16 :COLLECTOR
Pin Configurati on (top view)
TLP627,TLP627-2,TLP627-4
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Toshiba Electronic Devices & Storage Corporation
Absolute Maximum Ratings (Ta=25°C)
Characteristics Symbol Rating Unit
TLP627
TLP627-2
TLP627-4
LED
Forward Current IF 60 50 mA
Forward Current Derating ∆IF /°C -0.7(Ta≥39°C) -0.5(Ta≥25°C) mA /°C
Pulse Forward Current IFP 1 (100μs puls e,100pps ) A
Reverse Voltage VR 5 V
Diode Power Dissipation (1 Circuit) PD 100 70 mW
Diode Power Dissi pation Derating (1 Circ uit )
∆ PD /°C -1.2 (Ta≥39°C) -0.7 (Ta≥25°C) mW /°C
Detector
Collector-Emitter Voltage VCEO 300 V
Emitter -Collector Voltage VECO 0.3 V
Collect or Current IC 150 mA
Collector Power Dissipation (1 Circuit) PC 150(300(Note 1)) 100 mW
Collect or Power Dissi pation Derat ing (Ta≥
25°C,1 Circuit)
∆ PC /°C -1.5(-3.5(Note 1)) -1.0 mW /°C
Operating Temperature Range Topr -55 to 100 °C
Storage Temperature Range Tstg -55 to 125 °C
Lead Soldering Temperature Tsol 260(10 s) °C
Total Package Power Dissipation (1 Circuit) PT 250(320(Note 1)) 150 mW
Total Package Power Dissipation Derating (Ta≥25°C,1 Circu it ) ∆ PT/°C -2.5(-3.2(Note 1)) -1.5 mW /°C
Isolation Voltage (AC,60 s, R.H. ≤ 60 %) (Note 2) BVS 5000 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: IF=20 mA Max
Note 2: Device considered a two terminal device : LED side pins Shorted together and DETECTOR side pins shorted
together.
Recommended Operating Conditions
Characteristics Symbol Min Typ. Max Unit
Supply Voltage VCC — — 200 V
Forward Current IF — 16 25 mA
Collect or Current IC — — 120 mA
Operating Temperature Topr -25 — 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP627,TLP627-2,TLP627-4
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Toshiba Electronic Devices & Storage Corporation
Electrical Characteristics (Ta=25°C)
Characteristics Symbol Test Conditi on Min Typ. Max Unit
LED
Forward Voltage VF IF = 10 mA 1.0 1.15 1.3 V
Reverse Current IR VR = 5 V — — 10 μA
Capacitance CT V = 0 V, f = 1MHz — 30 — pF
Detector
Collector-Emitter
Breakdown Voltage
V(BR)CEO IC = 0.1mA 300 — — V
Emitter-Collector
Breakdown Voltage
V(BR)ECO IE = 0.1mA 0.3 — — V
Collect or Dark Current ICEO VCE = 200V — 10 200 nA
VCE = 200V, Ta = 85 °C — — 20 μA
Capacitanc e Collect or
to Emitter
CCE V = 0 V, f = 1MHz — 10 — pF
Coupled Electrical Characteristics (Ta=25°C)
Characteristics Symbol Test Conditi on Min Typ. Max Unit
Current Transf er Ratio IC/IF IF = 1 mA, VCE = 1 V 1000 4000 — %
Saturated CTR IC/IF(sat) IF = 10 mA, VCE = 1 V 500 — — %
Collector-Emitter
Saturati on Voltage VCE(sat) IC = 10 mA, IF = 1 mA — — 1.0 V
IC = 100 mA, IF = 10 mA 0.3 — 1.2
Isolation Electrical Characteristics (Ta=25°C)
Characteristics Symbol Test Conditi on Min Typ. Max Unit
Capacitanc e Input to Output CS VS = 0 V, f = 1 MHz — 0.8 — pF
Isolation Resist ance RS VS = 500 V, R.H .≤ 60 % 5×10
10
10
14
— Ω
Isolation Voltage BVS AC, 6 0 s 5000 — — Vrms
TLP627,TLP627-2,TLP627-4
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Toshiba Electronic Devices & Storage Corporation
Switching Characteristics (Ta=25°C)
Characteristics Symbol Test Conditi on Min Typ. Max Unit
Rise Time tr VCC = 10 V
IC = 10 mA
RL = 100 Ω
— 40 —
μs
Fall Time tf — 15 —
Turn-on Time ton — 50 —
Turn-off Time toff — 15 —
Turn-on Time tON RL = 180 Ω (Fig.1)
VCC = 10 V, IF = 16 mA
— 5 —
Strage Time ts — 40 —
Turn-off Time tOFF — 80 —
Fig.1 Switching Time Test Circ u it
TLP627,TLP627-2,TLP627-4
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Toshiba Electronic Devices & Storage Corporation
NOTE: The above charact eristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
TLP627,TLP627-2,TLP627-4
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Toshiba Electronic Devices & Storage Corporation
NOTE: The above charact eristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
TLP627,TLP627-2,TLP627-4
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Toshiba Electronic Devices & Storage Corporation
10-3
I
CEO
I
CEO
NORMALIZED IC
NORMALIZED IC
NOTE: The above charact eristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
TLP627,TLP627-2,TLP627-4
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Toshiba Electronic Devices & Storage Corporation
RESTRICTIONS ON PRODUCT USE
Toshiba Corporation and its subsidiaries and affiliates are collecti vely ref erred t o as “TOSHIBA”.
Hardware, soft ware and systems described in this document are collec t i vel y referred to as “Product ”.
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• This document and any information herein may not be reproduced without pri or writt en permiss i on from TOSHIBA. Even with
TOSHIBA's written perm issi on, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's qual ity and reliabili ty, Product can malfuncti on or fail. Cust omers are
responsible for compl ying with safety standards and for providing adequate designs and safeguards for their hardware, soft ware and
systems which minimi ze risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before custom ers use the Product, create designs including t he
Product, or incorporat e the Product into thei r own applicati ons, c ust om ers must also refer to and comply with (a) the latest versi ons of
all relevant TOSHIBA i nformation, including without limitati on, this document, the specific at i ons, the data sheets and applic at i on notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliabil i ty Handbook" and (b) the
instruct i ons for the applicati on with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, includi ng but not limit ed to (a) determini ng the appropriateness of the use of this Product in such
design or applications; (b) evaluat ing and determ i ni ng the applic abi lity of any information contained in this document, or in charts,
diagrams, programs, al gorithms , sample application circuits, or any other referenc ed docum ents; and (c) validati ng al l operati ng
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APPLICATIONS.
• PRODUCT IS NEI THE R INTENDE D NO R WARR ANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUI RE
EXTRAORDINARILY HIGH LEVELS OF QU ALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHI CH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SE RIOUS PUBLIC IMPACT
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OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
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