LESHAN RADIO COMPANY, LTD.
MUN5311dw–1/13
1
3
2
MUN5311DW1T1
Series
SOT
-
363
CASE 419B STYLE1
6
4
5
The BR T (Bias Resistor T ransistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter resistor. These digital tran-
sistors are designed to replace a single device and its external resistor bias network. The BR T
eliminates these individual components by integrating them into a single device. In the
MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package
which is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
13
2
64
5
Q1
Q2
R1
R2
R1R2
XX
MARKING DIAGRAM
132
645
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
xx = Device Marking
= (See Page 2)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1
and Q 2 , – minus sign for Q 1 (PNP) omitted)
Rating Symbol Value Unit
Collector-Base Voltage V CBO 50 Vdc
Collector-Emitter Voltage V CEO 50 Vdc
Collector Current I C100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated) Symbol Max Unit
Total Device Dissipation P D187 (Note 1.) mW
T A = 25°C
Derate above 25°C mW/°C
Thermal Resistance – R θJA 670 (Note 1.) °C/W
Junction-to-Ambient 490 (Note 2.)
Characteristic
(Both Junctions Heated) Symbol Max Unit
Total Device Dissipation
T A = 25°C
Derate above 25°C
P D250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
mW
mW/°C
Thermal Resistance –
Junction-to-Ambient R θJA 493 (Note 1.)
325 (Note 2.) °C/W
Thermal Resistance –
Junction-to-Lead R θJL 188 (Note 1.)
208 (Note 2.) °C/W
Junction and Storage
Temperature T J , T stg –55 to +150 °C
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
LESHAN RADIO COMPANY, LTD.
MUN5311dw–2/13
DEVICE MARKING AND RESISTOR VALUES
Device Package Marking R 1(K) R 2(K) Shipping
MUN5311DW1T1 SOT–363 11 10 10 3000/Tape & Reel
MUN5312DW1T1 SOT–363 12 22 22 3000/Tape & Reel
MUN5313DW1T1 SOT–363 13 47 47 3000/Tape & Reel
MUN5314DW1T1 SOT–363 14 10 47 3000/Tape & Reel
MUN5315DW1T1 (Note 3.) SOT–363 15 10 3000/Tape & Reel
MUN5316DW1T1 (Note 3.) SOT–363 16 4.7 3000/Tape & Reel
MUN5330DW1T1 (Note 3.) SOT–363 30 1.0 1.0 3000/Tape & Reel
MUN5331DW1T1 (Note 3.) SOT–363 31 2.2 2.2 3000/Tape & Reel
MUN5332DW1T1 (Note 3.) SOT–363 32 4.7 4.7 3000/Tape & Reel
MUN5333DW1T1 (Note 3.) SOT–363 33 4.7 47 3000/Tape & Reel
MUN5334DW1T1 (Note 3.) SOT–363 34 22 47 3000/Tape & Reel
MUN5335DW1T1 (Note 3.) SOT–363 35 2.2 47 3000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 , – minus sign for Q 1 (PNP) omitted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V CB = 50 V, I E = 0) I CBO – – 100 nAdc
Collector-Emitter Cutoff Current (V CE = 50 V, I B = 0) I CEO – – 500 nAdc
Emitter-Base Cutoff Current MUN5311DW1T1
(V EB = 6.0 V, I C = 0) MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
MUN5311DW1T1 Series
I EBO –
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
mAdc
Collector-Base Breakdown Voltage (I
C
=10 µA, I
E
= 0)
V (BR)CBO 50 – – Vdc
Collector-Emitter Breakdown Voltage(Note 4.)(I
C
=2.0 mA,I
B
=0)
V (BR)CEO 50 – – Vdc
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
8 8
LESHAN RADIO COMPANY, LTD.
MUN5311dw–3/13
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 , – minus sign for Q 1 (PNP) omitted)
(Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(Note 5.)
DC Current Gain MUN5311DW1T1
(V CE = 10 V, I C = 5.0 mA) MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
MUN5311DW1T1 Series
V CE(sat)
h FE 35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
–
–
–
–
–
–
–
–
–
–
–
–
Collector-Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) MUN5330DW1T1/MUN5331DW1T1
(I
C
= 10 mA, I
B
= 1 mA) MUN5315DW1T1/MUN5316DW1T1
MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1
– – 0.25 Vdc
Output Voltage (on)
(V CC= 5.0V, VB = 2.5V,R L= 1.0 kΩ) MUN5311DW1T1
MUN5312DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
(V CC=5.0V,VB=3.5 V, RL=1.0kΩ) MUN5313DW1T1
V OL –
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
LESHAN RADIO COMPANY, LTD.
MUN5311dw–4/13
Output Voltage (off)
(VCC =5.0V, VB=0.5V, RL=1.0kΩ)
(VCC=5.0V, VB=0.050V, RL=1.0kΩ) MUN5330DW1T1
(VCC=5.0V, VB=0.25V, RL=1.0kΩ) MUN5315DW1T1
MUN5316DW1T1
MUN5333DW1T1
MUN5311DW1T1 Series
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 , – minus sign for Q 1 (PNP) omitted)
(Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(Note 5.) V OH 4.9 – – Vdc
Input Resistor MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
R17.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
kΩ
Resistor Ratio
MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1/MUN5316DW1T1
MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
R 1 / R 20.8
0.17
–
0.8
0.055
0.38
0.038
1.0
0.21
–
1.0
0.1
0.47
0.047
1.2
0.25
–
1.2
0.185
0.56
0.056
5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
P D , POWER DISSIPATION (mW)
300
250
200
150
100
50
0
T A , AMBIENT TEMPERA TURE (°C)
Figure 1. Derating Curve
–50 0 50 100 150
LESHAN RADIO COMPANY, LTD.
MUN5311dw–5/13
MUN5311DW1T1 Series
I C , COLLECTOR CURRENT (mA)
Figure 2. V CE(sat) versus I C
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
I C , COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
I C , COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
V in , INPUT VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
1
0.1
0.01
0.001 020 4050
h FE , DC CURRENT GAIN (NORMALIZED)
1000
100
10
1 10 100
4
3
2
1
001020304050
C ob CAPACITANCE (pF)
100
10
1
0.1
0.01
0.001012345678910
10
1
0.1 01020304050
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5311DW1T1 NPN TRANSISTOR
LESHAN RADIO COMPANY, LTD.
MUN5311dw–6/13
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5311DW1T1 PNP TRANSISTOR
I C , COLLECTOR CURRENT (mA)
Figure 7. V CE(sat) versus I C
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
I C ,COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
I C , COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
V in , INPUT VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 10. Output Current versus Input oltage
1
0.1
0.01 020 4050
h FE , DC CURRENT GAIN (NORMALIZED)
1000
100
10 1 10 100
4
3
2
1
001020304050
C ob CAPACITANCE (pF)
100
10
1
0.1
0.01
0.001012345678910
100
10
1
0.1
01020304050
LESHAN RADIO COMPANY, LTD.
MUN5311dw–7/13
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5312DW1T1 NPN TRANSISTOR
I C , COLLECTOR CURRENT (mA)
Figure 12. V CE(sat) versus I C
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 14. Output Capacitance
I C , COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
I C , COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
V in , INPUT VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 15. Output Current versus Input oltage
1
0.1
0.01
0.001 0204050
h FE , DC CURRENT GAIN (NORMALIZED)
1000
100
10 1 10 100
4
3
2
1
001020304050
C ob CAPACITANCE (pF)
100
10
1
0.1
0.01
0.001012345678910
100
10
1
0.1010 20 30 4050
LESHAN RADIO COMPANY, LTD.
MUN5311dw–8/13
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5312DW1T1 PNP TRANSISTOR
I C , COLLECTOR CURRENT (mA)
Figure 17. V CE(sat) versus I C
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 19. Output Capacitance
I C ,COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
I C , COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
V in , INPUT VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 20. Output Current versus Input oltage
1
0.1
0.01
0.001 0204050
h FE , DC CURRENT GAIN (NORMALIZED)
1000
100
10 1 10 100
4
3
2
1
001020304050
C ob CAPACITANCE (pF)
100
10
1
0.1
0.01
0.001012345678910
100
10
1
0.1
01020304050
LESHAN RADIO COMPANY, LTD.
MUN5311dw–9/13
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5313DW1T1 NPN TRANSISTOR
I C , COLLECTOR CURRENT (mA)
Figure 22. V CE(sat) versus I C
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 24. Output Capacitance
I C , COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
I C , COLLECTOR CURRENT (mA)
Figure 23. DC Current Gain
V in , INPUT VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 25. Output Current versus Input oltage
1
0.1
0.01
0.001 020 4050
h FE , DC CURRENT GAIN (NORMALIZED)
1000
100
10 1 10 100
4
3
2
1
001020304050
C ob CAPACITANCE (pF)
100
10
1
0.1
0.01
0.001012345678910
100
10
1
0.1010 20 30 40 50
LESHAN RADIO COMPANY, LTD.
MUN5311dw–10/13
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5313DW1T1 PNP TRANSISTOR
I C , COLLECTOR CURRENT (mA)
Figure 27. V CE(sat) versus I C
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 29. Output Capacitance
I C ,COLLECTOR CURRENT (mA)
Figure 31. Input Voltage versus Output Current
I C , COLLECTOR CURRENT (mA)
Figure 28. DC Current Gain
V in , INPUT VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 30. Output Current versus Input oltage
1
0.1
0.01 010203050
h FE , DC CURRENT GAIN (NORMALIZED)
1000
100
10 1 10 100
1
0.8
0.6
0.4
0.2
001020304050
C ob CAPACITANCE (pF)
100
10
1
0.1
0.01
0.001012345678910
100
10
1
0.1
01020304050
LESHAN RADIO COMPANY, LTD.
MUN5311dw–11/13
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5314DW1T1 NPN TRANSISTOR
I C , COLLECTOR CURRENT (mA)
Figure 32. V CE(sat) versus I C
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 34. Output Capacitance
I C , COLLECTOR CURRENT (mA)
Figure 36. Input Voltage versus Output Current
I C , COLLECTOR CURRENT (mA)
Figure 33. DC Current Gain
V in , INPUT VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
V in , INPUT VOLT AGE (VOLTS)
Figure 35. Output Current versus Input oltage
1
0.1
0.01
0.001 020406080
h FE , DC CURRENT GAIN (NORMALIZED)
300
250
200
150
100
50
01 2 4 6 8101520405060708090100
4
3
2
1
00 2 4 6 8 1015202530 35404550
C ob CAPACITANCE (pF)
100
10
1012345678910
10
1
0.1010 20 30 40 50
LESHAN RADIO COMPANY, LTD.
MUN5311dw–12/13
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5314DW1T1 PNP TRANSISTOR
I C , COLLECTOR CURRENT (mA)
Figure 37. V CE(sat) versus I C
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 39. Output Capacitance
I C ,COLLECTOR CURRENT (mA)
Figure 41. Input Voltage versus Output Current
I C , COLLECTOR CURRENT (mA)
Figure 38. DC Current Gain
V in , INPUT VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 40. Output Current versus Input oltage
1
0.1
0.01
0.001 020406080
h FE , DC CURRENT GAIN (NORMALIZED)
180
160
140
120
100
80
60
40
20
01 2 4 6 8101520405060708090100
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8 101520 253035404550
C ob CAPACITANCE (pF)
100
10
1012345678910
10
1
0.1
01020304050
LESHAN RADIO COMPANY, LTD.
MUN5311dw–13/13
MUN5311DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5315DW1T1
I C , COLLECTOR CURRENT (mA)
Figure 42. DC Current Gain–PNP
1000
100 1.0 10 100
h FE , DC CURRENT GAIN (NORMALIZED)
1000
100
I C , COLLECTOR CURRENT (mA)
Figure 43. DC Current Gain–NPN
h FE , DC CURRENT GAIN (NORMALIZED)
1.0 10 100
I C , COLLECTOR CURRENT (mA)
Figure 44. DC Current Gain–PNP
1000
100 1.0 10 100
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5316DW1T1
1000
100
I C , COLLECTOR CURRENT (mA)
Figure 45. DC Current Gain–NPN
h FE , DC CURRENT GAIN (NORMALIZED)
1.0 10 100
