2N5550TA - ON SEMICONDUCTOR

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2N5550 — NPN Epitaxial Silicon Transistor

2N5550 Rev. 1.4

February 2015

2N5550

NPN Epitaxial Silicon Transistor

Features

• Amplifier Transistor

• Collector-Emitter Voltage: VCEO = 140 V

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Part Number Top Mark Package Packing Method

2N5550BU 2N5550 TO-92 3L Bulk

2N5550TA 2N5550 TO-92 3L Ammo

2N5550TAR 2N5550 TO-92 3L Ammo

2N5550TF 2N5550 TO-92 3L Tape and Reel

2N5550TFR 2N5550 TO-92 3L Tape and Reel

Symbol Parameter Value Unit

VCBO Collector-Base Voltage 160 V

VCEO Collector-Emitter Voltage 140 V

VEBO Emitter-Base Voltage 6 V

ICCollector Current 600 mA

TJJunction Temperature 150 °C

TSTG Storage Temperature -55 to 150 °C

1. Emitter 2. Base 3. Collector

TO-92

2N5550 — NPN Epitaxial Silicon Transistor

2N5550 Rev. 1.4 2

Thermal Characteristics(1)

Values are at TA = 25°C unless otherwise noted.

Note:

1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Note:

2. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%

Symbol Parameter Max. Unit

PDTotal Device Dissipation 625 mW

Derate Above 25°C5.0mW/°C

RθJA Thermal Resistance, Junction-to-Ambient 200 °C/W

Symbol Parameter Conditions Min. Typ. Max. Unit

BVCBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 160 V

BVCEO Collector-Emitter Breakdown Voltage(2) IC = 1 mA, IB = 0 140 V

BVEBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6 V

ICBO Collector Cut-Of f Curren t VCB = 100 V, IE = 0 100 nA

IEBO Emitter Cut-Off Current VEB = 4 V, IC = 0 50 nA

hFE DC Current Gain(2) IC = 1 mA, VCE = 5 V 60

IC = 10 mA, VCE = 5 V 60 250

IC = 50 mA, VCE = 5 V 20

VCE(sat) Collector-Emitter Saturation Voltage(2) IC = 10 mA, IB = 1 mA 0.15 V

IC = 50 mA, IB = 5 mA 0.25

VBE(sat) Base-Emitter Saturation Voltage(2) IC = 10 mA, IB = 1 mA 1.0 V

IC = 50 mA, IB = 5 mA 1.2

fTCurrent Gain Bandwidth Product IC = 10 mA, VCE = 10 V

f = 100 MHz 100 300 MHz

Cob Output Capacitance VCB = 10 V, IE = 0,

f = 1 MHz 6pF

NF Noise Figure IC = 250 μA, VCE = 5 V,

RS = 1 kΩ,f = 10 Hz to

15.7 kHz 10 dB

2N5550 — NPN Epitaxial Silicon Transistor

2N5550 Rev. 1.4 3

Typical Performance Characteristics

Figure 1. Typical Pulsed Current Gain vs.

Collector Current Figure 2. Collector-Emitter Saturation Voltage vs.

Collector Current

Figure 3. Base-Emitter Saturation Voltage vs.

Collector Current Figure 4. Base-Emitter On Voltage vs .

Collector Current

Figure 5. Collector Cut-Off Current vs.

Ambient Temperature Figure 6. Input and Output Capacitance vs.

Reverse Voltage

1 10 100 1000

100

150

200

250 125oC

100oC

75oC

-40oC

25oC

VCE=5V

hFE- DC CURRENT GAIN

IC- COLLECTOR CURRENT [mA]

1 10 100

0.01

0.1

10 ?10

125oC

100oC

75oC

-40oC25oC

VCE(SAT)- COLLECTOR-EMITTER VOLTAGE [V]

IC- COLLECTOR CURRENT [mA]

110100

0.2

0.4

0.6

0.8

1.0

125oC

100oC

75oC

-40oC

25oC

VBE(SAT)- BASE-EMITTER VOLTAGE [V]

IC- COLLECTOR CURRENT [mA]

1 10 100 1000

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TA = 125oCTA = 100oC

TA = 75oC

TA = -40oC

TA = 25oC

VBE(ON)- BASE-EMITTER VOLTAGE [V]

IC- COLLECTOR CURRENT [mA]

25 50 75 100 125

T - AMBIENT TEMPERATURE ( C)

I - COLLECTOR CURRENT (nA)

CBO

V = 10 0V

012345678910

100

COB

CIB

CAPACITANCE [pF]

REVERSE BIAS VOLTAGE [V]

2N5550 — NPN Epitaxial Silicon Transistor

2N5550 Rev. 1.4 4

Typical Performance Characteristics (Continued)

Figure 7. Collector- Emitter Breakdown Voltage

with Resistance between Emitter-Base Figure 8. Small Signal Current Gain vs.

Collector Current

Figure 9. Power Dissipation vs.

Ambient Temperature

0.1 1 10 100 1000

160

180

200

220

240

260

RESISTANCE (k )

BV - BREAKDOWN VOLTAGE (V)

CER

I = 1.0 mA

11050

I - COLLECTOR CURRENT (mA)

h - SMALL SIGNAL CURRENT GAIN

FREG = 20 MHz

V = 10V

0 25 50 75 100 125 150

100

200

300

400

500

600

700

TEMPERATURE ( C)

P - POWER DISSIPATION (mW)

TO-92

SOT-23

2N5550 — NPN Epitaxial Silicon Transistor

2N5550 Rev. 1.4 5

Physical Dimensions

Figure 10. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type

2N5550 — NPN Epitaxial Silicon Transistor

2N5550 Rev. 1.4 6

Physical Dimensions (Continued)

Figure 11. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type

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Rev. I73

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