DS30373 Rev. 2 - 2 2 of 3 BC857BS
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Electrical Characteristics @ TA= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
DC Current Gain (Note 2) hFE 220 — 475 — VCE = -5.0V, IC = -2.0mA
Thermal Resistance, Junction to Ambient Air (Note 1) RqJA — — 625 °C/W Note 1
Collector-Emitter Saturation Voltage (Note 2) VCE(SAT) ——
—
-100
-400 mV IC= -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
Base-Emitter Saturation Voltage (Note 2) VBE(SAT) — -700 — mV IC = -10mA, IB = -0.5mA
Base-Emitter Voltage (Note 2) VBE -580 -665 -750 mV VCE = -5.0V, IC = -2.0mA
Collector Cutoff Current ICBO
ICBO ——
—
-15
-4.0
nA
µA
VCB = -30V, IE= 0
VCB = -30V, Tj = 150°C
Emitter Cutoff Current IEBO — — -100 nA VEB = -5.0V, IC = 0
Gain Bandwidth Product fT100 — — MHz VCE = -5.0V, IC = -10mA,
f = 100MHz
Collector-Base Capacitance CCBO —— 3 pF
VCB = -10V, f = 1.0MHz
Emitter-Base Capacitance CEBO —11 — pF
VEB = -0.5V, f = 1.0MHz
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
TCUDORPWEN
0
50
100
150
200
5
0 100 200
P , POWER DISSIPATION (mW)
d
T , AMBIENT TEMPERATURE (°C)
A
Fi
.1,PowerDeratin
Curve
(see Note 1)
1
10
100
10 100
1
h DC CURRENT GAIN
FE,
I , COLLECTOR CURRENT (mA)
C
Fi
. 2, DC Current Gain vs Collector Current
V = -5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
.5
0.1 110
100 1000
V , COLLECTOR SATURATION VOLTAGE (V)
CE
I , COLLECTOR CURRENT (mA)
C
Fi
. 3, Collector Saturation Volta
e vs Collector Current
I / I = 20
CB
T = 150°C
A
T = 25°C
A
T = -50°C
A10
100
110100
f , GAIN BANDWIDTH PRODUCT (MHz)
T
I , COLLECTOR CURRENT (mA)
C
Fi
. 4, Gain Bandwidth Product vs Collector Current
V = -5V
CE
T = 25°C
A