VS-MBRS360-M3
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Revision: 26-Aug-14 1Document Number: 95749
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High Performance Schottky Rectifier, 3.0 A
FEATURES
• Small foot print, surface mountable
• Very low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long
term reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-MBRS360-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
Package SMC
IF(AV) 3.0 A
VR60 V
VF at IF0.61 V
IRM max. 30 mA at 125 °C
TJ max. 150 °C
Diode variation Single die
EAS 5.0 mJ
Cathode Anode
DO-214AB (SMC)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 3.0 A
VRRM 60 V
IFSM tp = 5 μs sine 790 A
VF3.0 Apk, TJ = 125 °C 0.61 V
TJRange -55 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRS360-M3 UNITS
Maximum DC reverse voltage VR60 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV)
50 % duty cycle at TL = 118 °C, rectangular waveform 3.0
A
50 % duty cycle at TL = 105 °C, rectangular waveform 4.0
Maximum peak one cycle
non-repetitive surge current IFSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
VRRM applied
790
10 ms sine or 6 ms rect. pulse 80
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.0 A, L = 10 mH 5.0 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A
VS-MBRS360-M3
www.vishay.com Vishay Semiconductors
Revision: 26-Aug-14 2Document Number: 95749
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
Notes
(1) thermal runaway condition for a diode on its own heatsink
(2) Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Maximum forward voltage drop VFM (1)
3 A TJ = 25 °C 0.57 0.74
V
6 A 0.72 0.9
3 A TJ = 125 °C 0.51 0.61
6 A 0.62 0.77
Maximum reverse leakage current IRM (1)
TJ = 25 °C
VR = Rated VR
-0.5
mATJ = 100 °C - 20
TJ = 125 °C - 30
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C - 180 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body - 3.0 nH
Maximum voltage rate of change dV/dt Rated VR- 10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range TJ (1), TStg -55 to +150 °C
Maximum thermal resistance,
junction to lead RthJL (2)
DC operation
12
°C/W
Maximum thermal resistance,
junction to ambient RthJA 46
Approximate weight 0.24 g
0.008 oz.
Marking device Case style SMC (similar to DO-214AB) 36
dPtot
dTJ
------------- 1
RthJA
--------------<
VS-MBRS360-M3
www.vishay.com Vishay Semiconductors
Revision: 26-Aug-14 3Document Number: 95749
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
0.1
1.0
10
I
F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.4 0.6 0.8 1.0 1.20.2
TJ = 150 °C
TJ = 100 °C
TJ = 25 °C
0.001
1.0
10
0.1
0.01
100
IR - Reverse Current (mA)
VR - Reverse Voltage (V)
1051520 4025 30 350
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
10
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
20
10 30 40 50 70
60
0
TJ = 25 °C
0.1
1.0
10
100
0.00001 0.0001 0.001 0.01 0.1 1.0
1.0 10
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
100
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
VS-MBRS360-M3
www.vishay.com Vishay Semiconductors
Revision: 26-Aug-14 4Document Number: 95749
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
60
70
80
90
100
110
120
140
150
160
130
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
2134
5
0
DC
See note (1)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Square wave (D = 0.50)
Rated VR applied
0
0.5
1.5
3.0
2.5
2.0
1.0
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
213450
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
10
100
1000
IFSM - Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
100 1000 10 000
10
At any rated load condition
and with rated VRRM applied
following surge
VS-MBRS360-M3
www.vishay.com Vishay Semiconductors
Revision: 26-Aug-14 5Document Number: 95749
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-MBRS360-M3/9AT 9AT 3500 13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95402
Part marking information www.vishay.com/doc?95403
Packaging information www.vishay.com/doc?95404
2- Schottky MBR series
3- S = SMC
4- Current rating (3 = 3 A)
5- Voltage rating (60 = 60 V)
6- -M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
Device code
51 32 4 6
VS- MBR S 3 60 -M3
1- Vishay Semiconductors products
Document Number: 95402 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 09-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
SMC
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in inches (millimeters)
Cathode band
DO-214AB (SMC)
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
0.060 (1.52)
0.030 (0.76)
0.103 (2.62)
0.079 (2.06)
Mounting Pad Layout
0.126 (3.20) MIN.
0.060 (1.52) MIN.
0.185 (4.69) MAX.
0.320 (8.13) REF.
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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