NPN POWER TRANSISTORS MJE13006 300 VOLTS 8 AMP, 80 WATTS Designed for switching regulator, DC-DC converter, AC-DC inverter, high voltage, high speed switching applications. Features: VCEO(sus) = 300V (Min). VCEv = 600V blocking capability Excellent switching time: tr = 1.5 us (Max.), tf = 0.7 ws (Max.) NPN COLLECTOR EMITTER CASE STYLE TO-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 1 REFERENCE .116(2.98) 494(10.26) 8285 aoa aay 380(9.65) qe T7018 22) 9551.30) 7 - - - .28516.73) oF 245(6.22) |} CASE yo TEMPERATURE f rae POINT 2355(9.02) FE ,325(8. 25} + 4145(3.68) 9 | 1443.58) j .220(5.59) | 006(0.15) Al i 1303.3) [* 50116.025) TERM.t | .800(12.7)MIN. TERM2~ 055(1.39) DaS Ta) TERM.3 3310.84) _ 4 I .107(2.72} 027(0.68) . teaan 087(2.21) .055(1.39) : 210(5.33 0210.53} Saath ta) OES 075(0.38) TYPE |TERM 1 | TERM2 | TERMS | TAB | [To-220-a8 {| BASE | COLLECTOR | EMITTER | CQLLECTOR | maximum ratings (Ta = 25C) (unless otherwise specified) RATING SYMBOL MJE13006 UNITS Collector-Emitter Voltage VCEO 300 Voits Collector-Emitter Voltage VoEV 600 Volts Emitter Base Voltage VEBO 9 Volts Collector Current Continuous Ico 8 A Pulse lop 16 Base Current Continuous lg 4 A Pulse IBP 8 Emitter Current Continuous le 12 A Pulse lep 24 Collector Power Dissipation Ta = 25C Pc 2 Watts Derate above 25C 16 mWw/C Collector Power Dissipation To = 25C Po 80 Watts Derate above 25C 640 mWw/G Operating and Storage Junction Temperature Range Ty, Tste ~65 to +150 C 723thermal characteristics Thermal Resistance, Junction to Case Resc 1.56 C/W Thermal Resistance, Junction to Ambient Rava 62.5 C/W Maximum Lead Temperature for Soldering Purpose: 1% from Case for 5 Seconds Th 275 C electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP MAX | UNIT | off characteristics Collector-Emitter Voltage VCEQ(sus) 300 - _ Volts (ic = 10mA, Ip = 0) Collector Cutoff Current (VcE = 600V, Vee = ~1.5V) IcEV _ - 1 mA (Voce = 600V, Vee = -1.5V, To = 100C) - _ 5 Emitter Cutoff Current (VeB = 9V, Ic = 0) lEBO - 1 mA second breakdown Second Breakdown with Base Forward Biased FBSOA SEE FIGURE 1 Clamped Inductive SOA with Base Reversed Bias RBSOA SEE FIGURE 2 on characteristics DC Current Gain (Ic = 2A, Vog = 5V) hee 8 _ 60 - (Ic = 5A, Vc = 5V) 5 =_ 30 Collector-Emitter Saturation Voltage VCE (sat) (Io = 2A, Ip = 0.4A) _ =- 1 Vv (I = 5A, Ip = 1A) _ _ 2 (Ig = 8A, Ip = 2A) ~ 3 (Ic = 5A, Ip = 1A, To = 100C) _ _ 3 Base-Emitter Saturation Voltage VBE(sat) (Ig = 2A, Ip = 0.4A) 1.2 V (I = 5A, Ig = 1A) ~ 1.6 (Ic = 5A, Ig = 1A, To = 100C) _ _ 1.5 dynamic characteristics Output Capacitance _ _ (VoR = 10V, Ie = 0, f= 0.1 MHz) Cob 90 pF Current Gain Bandwidth Product (Ig = 500MA, Voce = 10V, fragt = 1.0 MHz) ft 4 MHz switching characteristics Resistive Load Delay Time (Voc = 125V, Io = 5A ta _ _- 0.1 us Rise Time Ip1 = -Ip2 = 1A, tp = 25 ws tr _ - 1.5 Storage Time Duty Cycle < 1%) ts _ _ 3 Fall Time tf _ _ 0.7 Inductive Load, Clamped : Inductive Load (Ic = 5A, Storage Time Velamp = 300V, Iai = 1A, tsy _ _ 2.3 us Crossover Time VBE(off) = -5V, Tc = 100C) te _ - 0.7 (1) Pulse Test: Pulse Width - 300us Duty Cycle <= 2%. 724~~ ND o ss ic, COLLECTOR CURRENT (AMP) oa So nn o o RO POWER DERATING FACTOR hee, OC CURRENT GAIN S wn -_ > WW so) c= 25C LIMIT om ~ = BONDING WIRE LIMIT _, SECOND BREAKDOWN CURVES APPLY BELOW RATED V: MJE1 7 10 20 =(30 50 70 100 Vce, COLLECTOR EMITTER VOLTAGE (VOLTS) FIGURE 1 FORWARD BIAS SAFE OPERATING AREA 500 Te < 100C 1B1=2.5A Vee(ott) = 9 Y fc, COLLECTOR (AMP) MJE 13006 0 100 200. 300 400 500 600 700 600 Vcev, COLLECTOR-EMITTER CLAMP VOLTAGE (VOLTS) FIGURE 2 REVERSE BIAS SWITCHING SAFE OPERATING AREA The Safe Operating Area figures shown in Figures 1 and 2 are specified ratings for these devices under the test conditions shown. COND BREA DERATI 40 60 80 100 120 Tc, CASE TEMPERATURE (C) 140 FIGURE 3 FORWARD BIAS POWER DERATING 160 0.1 0.2 03 05 07 1 2. 3 Ic, COLLECTOR CURRENT (AMP) FIGURE 5 ~-DC CURRENT GAIN 725 02 Zascit) = rit) Rave RaJc = 156 CAW MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME @t; TJ(pk) - TC = P(pk) Zeuctt) DUTY CYCLE, D= + JUL pt SINGLE PULSE ie (pk) t2 o 2 RS 2 8 2 2 n TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2 0.01 O01 002 005 04 02 O85 10 20 $0 10 2 60 100 200 4500 10k TIME (ms) FIGURE 4 TYPICAL THERMAL RESPONSE [(Z,jc(t)] VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) *sa8 0.07.01 G2 903, O5 O87 1 2 3 Ig, BASE CURRENT (AMP) FIGURE 6 COLLECTOR SATURATION REGIONV, VOLTAGE (VOLTS) Ic, COLLECTOR CURRENT (nA) t, TIME (ns) os s 2g se Bm Ot V, VOLTAGE (VOLTS) S ne 0.1 0.5 1 7 10 Ic, COLLECTOR CURRENT (AMP) FIGURE 8 COLLECTOR-EMITTER SATURATION VOLTAGE _ o xz an x wn -_- | S xX R C, CAPACITANCE (pF} wn Qo a5 1 1000 VR, REVERSE VOLTAGE (VOLTS) ' FIGURE 10 ~ CAPACITANCE RESISTIVE SWITCHING PERFORMANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 OA 02 03 05 07 1 2 3 5 7 10 Ic, COLLECTOR CURRENT (AMP) FIGURE 7 BASE-EMITTER SATURATION VOLTAGE 10K Vce # 250 V 1K Ty = 150C 100 t 1 10 50C 1 259 01 REVERSE FORWARO -0.4 -0.2 0 +0.2 +0.4 +0.6 Vee. BASE-EMITTER VOLTAGE (VOLTS) FIGURE 9 COLLECTOR CUTOFF REGION 1K Vcc = 125V 700 Ic/lg = 5 500 Ty = 25C 300 200 td @ VBE (off) = 5V 100 70 Fy 0.2 05 07 1 10 ic, COLLECTOR CURRENT (AMP) FIGURE 11 TURN-ON TIME Vcc = 126V Ic/lg =5 Ty = 250C 700 500 1, TIME(ns) 300 200 0.1 0.2 10 IC, COLLECTOR CURRENT (AMP) FIGURE 12 TURN-OFF TIME 726Velamp 90% VCEM 90% icm fi th TIME FIGURE 13 INDUCTIVE SWITCHING MEASUREMENTS v > CE g > < Q 7] > : 2 e w a g a ra 5 3 S lc VcE TIME 20 ns/DIV FIGURE 14 TYPICAL INDUCTIVE SWITCHING WAVEFORMS (at 300 V and 8A with Igy = 1.6A and VBE (off) = 5 V) 727