MPSA64 / MMBTA64 / PZTA64 — PNP Darlington Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA64 / MMBTA64 / PZTA64 Rev. B0 1
November 2011
MPSA64 / MMBTA64 / PZTA64
PNP Darlington Transistor
Features
• This device is designed for applications requiring extremely high current gain at currents to 800 mA.
• Sourced from Process 61.
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings are limiting value s ab ove which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are base d on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = 25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
Symbol Parameter Value Units
VCES Collector-Emitter Voltage -30 V
VCBO Collector-Base V oltage -30 V
VEBO Emitter-Base Voltage -10 V
ICCollector Current - Continuous -1.2 A
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Parameter Max. Units
MPSA64 *MMBTA64 **PZTA64
PDTotal Device Dissip ation
Derate above 25°C625
5.0 350
2.8 1,000
8.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W
MPSA64 MMBTA64 PZTA64
EBC TO-92 SOT-23 SOT-223
Mark:2V
C
B
EE
BC
C
MPSA64 / MMBTA64 / PZTA64 — PNP Darlington Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA64 / MMBTA64 / PZTA64 Rev. B0 2
Electrical Characteristics Ta = 25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Typical Performance Characteristics
Symbol Parameter Test Condition Min. Max. Units
OFF CHARACTERISTICS
V(BR)CES Collector-Emitter Breakdown Voltage IC = -100μA, IB = 0 -30 V
ICBO Collector-Cutoff Current VCB = -30V, IE = 0 -100 nA
IEBO Emitter-Cutoff Current VEB = -10V, IC = 0 -100 nA
ON CHARACTERISTICS*
hFE DC Current Gain IC = -10mA, VCE = -5.0V
IC = -100mA, VCE = -5.0V 10,000
20,000
VCE(sat) Collector-Emitter Saturation Voltage IC = -100mA, IB = -0.1mA -1.5 V
VBE(on) Base-Emitter On Voltage IC = -100mA, VCE = -5.0V -2.0 V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Bandwidth Product IC = -10mA, VCE = -5.0V,
f = 100MHz 125 MHz
Typical Pu lsed C u rren t Gai n
vs Col lecto r C urren t
0.01 0.1 1
0
10
20
30
40
50
I - COLLECTOR CURRENT (A)
h - T YPICAL PULSED CURRENT GAIN ( K)
C
FE
125 °C
25 °C
- 40 ° C
V = 5V
CE
C o ll ector -Emitter Satur ati o n
Vo ltag e vs C o ll ector Cu rrent
0.001 0.01 0.1 1
0
0.4
0.8
1.2
1.6
I - COLLECTOR CURRENT (A)
V - COLLEC TOR EMITTER VOLTA GE (V)
C
CESAT
β
= 1000
25 °C
- 40 °C
125 °C
MPSA64 / MMBTA64 / PZTA64 — PNP Darlington Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
MPSA64 / MMBTA64 / PZTA64 Rev. B0 3
Typical Performance Characteristics (continued)
I n pu t a n d Output Ca pa c itanc e
vs Reverse Bias Voltage
0.1 1 10 100
0
4
8
12
16
RE VER SE VO L TA GE (V)
CA PA CI TANCE ( pF)
C
f = 1.0 M Hz
ib
Cob
Powe r Dis sipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPER ATURE ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
TO-92
SOT-23
B ase-Emitter Satur ati o n
V olt a ge v s Colle c tor Current
0.001 0.01 0.1 1
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CU R REN T (A)
V - BASE EMITTE R VOLTAGE (V)
C
BESAT
25 °C
- 4 0 °C
125 °C
β
= 1000
Base Emitter ON Voltage vs
Coll ect or Current
0.001 0.01 0.1 1
0
0.4
0.8
1.2
1.6
2
I - C OLLECTOR CU R REN T (A)
V - BAS E EMITTER ON VOLTAGE (V)
C
BE(ON)
V = 5V
CE
25 °C
- 4 0 °C
125 °C
C o ll ector -C u to ff Cu r rent
vs A mb ient Temperatu re
25 50 75 100 125
0.01
0.1
1
10
100
T - A MBI ENT TEMPER ATUR E ( C)
I - COLLECTOR CU RREN T (nA)
A
CBO
°
V = 15V
CB
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The datasheet is for reference information only. Rev. I57
