NAND04GW3B2B - Numonyx, B.V.

December 2007 Rev 5 1/58

NAND04GW3B2B

NAND08GW3B2A

4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page

3V, NAND Flash Memories

Features

■High density NAND Flash Memory

– up to 8 Gbit memory array

– Up to 256 Mbit spare area

– Cost effective solution for mass storage

applications

■NAND Interface

–x8 bus width

– Multiplexed Address/ Data

■Supply voltage

– 3.0V device: VDD = 2.7 to 3.6V

■Page size

– (2048 + 64 spare) Bytes

■Block size

– (128K + 4K spare) Bytes

■Page Read/Program

– Random access: 25µs (max)

– Sequential access: 30ns (min)

– Page program time: 200µs (typ)

■Copy Back Program mode

– Fast page copy without external buffering

■Cache Program and Cache Read modes

– Internal Cache Register to improve the

program and read throughputs

■Fast Block Erase

– Block erase time: 2ms (typ)

■Status Register

■Electronic Signature

■Chip Enable ‘don’t care’

– for simple interface with microcontroller

■Serial Number option

■Data protection

– Hardware and Software Block Locking

– Hardware Program/Erase locked during

Power transitions

■Data integrity

– 100,000 Program/Erase cycles (with ECC)

– 10 years Data Retention

■ECOPACK® package

■Development tools

– Error Correction Code software and

hardware models

– Bad Blocks Management and Wear

Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

TSOP48 12 x 20mm

www.numonyx.com

Contents NAND04GW3B2B, NAND08GW3B2A
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Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Memory array organization   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
1 Bad Blocks  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  11
Signal descriptions  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
1 Inputs/Outputs (I/O0-I/O7)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
2 Address Latch Enable (AL)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
3 Command Latch Enable (CL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
4 Chip Enable (E)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
5 Read Enable (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  13
6 Power-Up Read Enable, Lock/Unlock Enable (PRL)   . . . . . . . . . . . . . . . .  13
7 Write Enable (W)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
8 Write Protect (WP)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
9 Ready/Busy (RB)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
10 VDD Supply Voltage   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
11 VSS Ground   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  14
Bus operations   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
1 Command Input  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
2 Address Input  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
3 Data Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
4 Data Output  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  15
5 Write Protect   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  16
6 Standby   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  16
Command set . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Device operations  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
1 Read Memory Array  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  18
1.1 Random Read  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
1.2 Page Read  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

NAND04GW3B2B, NAND08GW3B2A Contents
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2 Cache Read  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  21
3 Page Program   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  22
3.1 Sequential Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.2 Random Data Input in page . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
4 Copy Back Program  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  24
5 Cache Program   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  26
6 Block Erase   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  27
7 Reset  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  27
8 Read Status Register  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  28
8.1 Write Protection Bit (SR7)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
8.2 P/E/R Controller and Cache Ready/Busy Bit (SR6)   . . . . . . . . . . . . . . . 28
8.3 P/E/R Controller Bit (SR5)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
8.4 Cache Program Error Bit (SR1)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
8.5 Error Bit (SR0)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
8.6 SR4, SR3 and SR2 are Reserved  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
9 Read Electronic Signature  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  30
Data Protection  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
1 Blocks Lock   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  32
2 Blocks Unlock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  32
3 Blocks Lock-Down  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  33
4 Block Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  33
Software algorithms  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
1 Bad Block Management  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  36
2 NAND Flash memory failure modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  36
3 Garbage Collection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  38
4 Wear-leveling algorithm  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  38
5 Error Correction Code   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  38
6 Hardware simulation models   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  39
6.1 Behavioral simulation models   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
6.2 IBIS simulations models   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Program and Erase times and endurance cycles . . . . . . . . . . . . . . . . . 40

Contents NAND04GW3B2B, NAND08GW3B2A

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10 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

11 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

11.1 Ready/Busy Signal Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . 53

11.2 Data Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54

12 Package mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55

13 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56

14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57

NAND04GW3B2B, NAND08GW3B2A List of tables
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List of tables
Table 1. Product Description  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 2. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Table 3. Valid Blocks  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 4. Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 5. Address Insertion  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 6. Address Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 7. Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 8. Copy Back Program addresses  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Table 9. Status Register Bits  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 10. Electronic Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 11. Electronic Signature Byte 3  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 12. Electronic Signature Byte 4  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 13. Block Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 14. Block failure  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 15. Program, Erase Times and Program Erase Endurance Cycles . . . . . . . . . . . . . . . . . . . . . 40
Table 16. Absolute Maximum Ratings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Table 17. Operating and AC Measurement Conditions  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 18. Capacitance  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Table 19. DC Characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Table 20. AC Characteristics for Command, Address, Data Input . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 21. AC Characteristics for operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 22. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20 mm, Package Mechanical Data. . . 55
Table 23. Ordering Information Scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Table 24. Document revision history  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57

List of figures NAND04GW3B2B, NAND08GW3B2A
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List of figures
Figure 1. Logic Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Figure 2. Logic Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Figure 3. TSOP48 Connections   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 4. Memory Array Organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5. Read Operations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 6. Random Data Output During Sequential Data Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 7. Cache Read Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 8. Page Program Operation  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 9. Random Data Input During Sequential Data Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 10. Copy Back Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 11. Page Copy Back Program with Random Data Input. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 12. Cache Program Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 13. Block Erase Operation  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 14. Blocks Unlock Operation  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Figure 15. Read Block Lock Status Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 16. Block Protection State Diagram  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 17. Bad Block management flowchart  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Figure 18. Garbage Collection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 19. Error Detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 20. Equivalent Testing Circuit for AC Characteristics Measurement  . . . . . . . . . . . . . . . . . . . . 43
Figure 21. Command Latch AC Waveforms  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Figure 22. Address Latch AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 23. Data Input Latch AC Waveforms  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Figure 24. Sequential Data Output after Read AC waveforms  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
Figure 25. Read Status Register AC Waveform  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Figure 26. Read Electronic Signature AC Waveform. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Figure 27. Page Read operation AC Waveform  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Figure 28. Page Program AC waveform  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Figure 29. Block Erase AC Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 30. Reset AC Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Figure 31. Program/Erase Enable Waveform  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Figure 32. Program/Erase Disable Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Figure 33. Ready/Busy AC Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Figure 34. Ready/Busy Load Circuit  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Figure 35. Resistor Value Versus Waveform Timings For Ready/Busy Signal . . . . . . . . . . . . . . . . . . 54
Figure 36. Data Protection   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Figure 37. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20 mm, Package Outline  . . . . . . . . . . 55

NAND04GW3B2B, NAND08GW3B2A Description

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1 Description

The NAND Flash 2112 Byte/ 1056 Word Page is a family of non-volatile Flash memories

that uses NAND cell technology. The NAND04GW3B2B and NAND08GW3B2A have a

density of 4 Gbits and 8 Gbits, respectively. They operate from a 3V voltage supply. The size

of a Page is 2112 Bytes (2048 + 64 spare).

The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8

Input/Output bus. This interface reduces the pin count and makes it possible to migrate to

other densities without changing the footprint.

To extend the lifetime of NAND Flash devices it is strongly recommended to implement an

Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000

program/erase cycles for each block.

The device has hardware and software security features:

●A Write Protect pin is available to give a hardware protection against program and

erase operations.

●A Block Locking scheme is available to provide user code and/or data protection.

The device features an open-drain Ready/Busy output that can be used to identify if the

Program/Erase/Read (P/E/R) Controller is currently active. The use of an open-drain output

allows the Ready/Busy pins from several memories to be connected to a single pull-up

resistor.

A Copy Back Program command is available to optimize the management of defective

blocks. When a Page Program operation fails, the data can be programmed in another page

without having to resend the data to be programmed.

The NAND04GW3B2B and NAND08GW3B2A have Cache Program and Cache Read

features which improve the program and read throughputs for large files. During Cache

Programming, the device loads the data in a Cache Register while the previous data is

transferred to the Page Buffer and programmed into the memory array. During Cache

Reading, the device loads the data in a Cache Register while the previous data is

transferred to the I/O Buffers to be read.

The device has the Chip Enable Don’t Care feature, which allows code to be directly

downloaded by a microcontroller, as Chip Enable transitions during the latency time do not

stop the read operation.

The devices have the option of a Unique Identifier (serial number), which allows each device

to be uniquely identified.

The Unique Identifier options is subject to an NDA (Non Disclosure Agreement) and so not

described in the datasheet. For more details of this option contact your nearest Numonyx

Sales office.

The device is available in a TSOP48 (12 x 20mm) package. In order to meet environmental

requirements, Numonyx offers the NAND04GW3B2B and NAND08GW3B2A in ECOPACK®

package. ECOPACK packages are Lead-free. The category of second Level Interconnect is

marked on the package and on the inner box label, in compliance with JEDEC Standard

JESD97. The maximum ratings related to soldering conditions are also marked on the inner

box label. ECOPACK is an Numonyx trademark.

Description NAND04GW3B2B, NAND08GW3B2A

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For information on how to order these options refer to Table 23: Ordering Information

Scheme. Devices are shipped from the factory with Block 0 always valid and the memory

content bits, in valid blocks, erased to ’1’.

See Table 1: Product Description, for all the devices available in the family.

Figure 1. Logic Block Diagram

Table 1. Product Description

Part Number Density Bus

Width

Page

Size

Block

Size

Memor

y Array

Operating

Voltage

Timings

Package

Random

access

time

(max)

Sequential

access

time (min)

Page

Program

(typ)

Block

Erase

(typ)

NAND04GW3B2B 4 Gb x8

2048+

Bytes

128K

+4K

Bytes

Pages x

4096

Blocks 2.7 to

3.6V

25µs 30ns 200µs 2ms TSOP48

NAND08GW3B2A 8 Gb x8

Pages x

8192

Blocks

25µs 30ns 200µs 2ms TSOP48

(1)

1. The NAND08GW3B2A is composed of two 4 Gbit dice.

Address

Command

Interface

Logic

P/E/R Controller,

High Voltage

Generator

I/O Buffers & Latches

AI12465

Y Decoder

Page Buffer

NAND Flash

Memory Array

X Decoder

I/O0-I/O7

Command Register

Cache Register

PRL

NAND04GW3B2B, NAND08GW3B2A Description

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Figure 2. Logic Diagram

Table 2. Signal Names

I/O0-7 Data Input/Outputs, Address Inputs, or Command Inputs

AL Address Latch Enable

CL Command Latch Enable

EChip Enable

RRead Enable

RB Ready/Busy (open-drain output)

WWrite Enable

WP Write Protect

PRL Power-Up Read Enable, Lock/Unlock Enable

VDD Supply Voltage

VSS Ground

NC Not Connected Internally

DU Do Not Use

AI12466b

VDD

NAND FLASH

VSS

I/O0-I/O7

PRL

Description NAND04GW3B2B, NAND08GW3B2A

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Figure 3. TSOP48 Connections

I/O3

I/O2

I/O6

I/O4

I/O7

AI12467b

NAND FLASH

24 25

I/O1

VSS

VDD

I/O5

I/O0

PRL

VDD

VSS

NAND04GW3B2B, NAND08GW3B2A Memory array organization

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2 Memory array organization

The memory array is made up of NAND structures where 32 cells are connected in series.

The memory array is organized in blocks where each block contains 64 pages. The array is

split into two areas, the main area and the spare area. The main area of the array is used to

store data whereas the spare area is typically used to store Error correction Codes, software

flags or Bad Block identification.

The pages are split into a 2048 Byte main area and a spare area of 64 Bytes. Refer to

Figure 4: Memory Array Organization.

2.1 Bad Blocks

The NAND Flash 2112 Byte/ 1056 Word Page devices may contain Bad Blocks, that is

blocks that contain one or more invalid bits whose reliability is not guaranteed. Additional

Bad Blocks may develop during the lifetime of the device.

The Bad Block Information is written prior to shipping (refer to Section 8.1: Bad Block

Management for more details).

Ta bl e 3 shows the minimum number of valid blocks. The values shown include both the Bad

Blocks that are present when the device is shipped and the Bad Blocks that could develop

later on.

These blocks need to be managed using Bad Blocks Management, Block Replacement or

Error Correction Codes (refer to Section 8: Software algorithms).

Table 3. Valid Blocks

Density of Device Min Max

4 Gbits 4016 4096

8 Gbits(1)

1. The NAND08GW3B2A is composed of two 4 Gbit dice.

8032 8192

Memory array organization NAND04GW3B2B, NAND08GW3B2A

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Figure 4. Memory Array Organization

AI12468

x8 bus width

Block = 64 Pages

Page = 2112 Bytes (2,048 + 64)

2,048 Bytes

2048 Bytes

Spare Area

Bytes

Block

8 bits

Bytes 8 bits

Page

Page Buffer, 2112 Bytes

Main Area

NAND04GW3B2B, NAND08GW3B2A Signal descriptions

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3 Signal descriptions

See Figure 2: Logic Diagram, and Table 2: Signal Names, for a brief overview of the signals

connected to this device.

3.1 Inputs/Outputs (I/O0-I/O7)

Input/Outputs 0 to 7 are used to input the selected address, output the data during a Read

operation or input a command or data during a Write operation. The inputs are latched on

the rising edge of Write Enable. I/O0-I/O7 are left floating when the device is deselected or

the outputs are disabled.

3.2 Address Latch Enable (AL)

The Address Latch Enable activates the latching of the Address inputs in the Command

Interface. When AL is high, the inputs are latched on the rising edge of Write Enable.

3.3 Command Latch Enable (CL)

The Command Latch Enable activates the latching of the Command inputs in the Command

Interface. When CL is high, the inputs are latched on the rising edge of Write Enable.

3.4 Chip Enable (E)

The Chip Enable input activates the memory control logic, input buffers, decoders and

sense amplifiers. When Chip Enable is low, VIL, the device is selected. If Chip Enable goes

high, vIH, while the device is busy, the device remains selected and does not go into standby

mode.

3.5 Read Enable (R)

The Read Enable pin, R, controls the sequential data output during Read operations. Data

is valid tRLQV after the falling edge of R. The falling edge of R also increments the internal

column address counter by one.

3.6 Power-Up Read Enable, Lock/Unlock Enable (PRL)

The Power-Up Read Enable, Lock/Unlock Enable input, PRL, is used to enable and disable

the lock mechanism. When PRL is High, VIH, the device is in Block Lock mode.

If the Power-Up Read Enable, Lock/Unlock Enable input is not required, the PRL pin should

be left unconnected (Not Connected) or connected to VSS.

Signal descriptions NAND04GW3B2B, NAND08GW3B2A

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3.7 Write Enable (W)

The Write Enable input, W, controls writing to the Command Interface, Input Address and

Data latches. Both addresses and data are latched on the rising edge of Write Enable.

During power-up and power-down a recovery time of 10µs (min) is required before the

Command Interface is ready to accept a command. It is recommended to keep Write Enable

high during the recovery time.

3.8 Write Protect (WP)

The Write Protect pin is an input that gives a hardware protection against unwanted program

or erase operations. When Write Protect is Low, VIL, the device does not accept any

program or erase operations.

It is recommended to keep the Write Protect pin Low, VIL, during power-up and power-down.

3.9 Ready/Busy (RB)

The Ready/Busy output, RB, is an open-drain output that can be used to identify if the P/E/R

Controller is currently active.

When Ready/Busy is Low, VOL, a read, program or erase operation is in progress. When the

operation completes Ready/Busy goes High, VOH.

The use of an open-drain output allows the Ready/Busy pins from several memories to be

connected to a single pull-up resistor. A Low will then indicate that one, or more, of the

memories is busy.

Refer to the Section 11.1: Ready/Busy Signal Electrical Characteristics for details on how to

calculate the value of the pull-up resistor.

3.10 VDD Supply Voltage

VDD provides the power supply to the internal core of the memory device. It is the main

power supply for all operations (read, program and erase).

An internal voltage detector disables all functions whenever VDD is below VLKO (see

Ta bl e 1 9 ) to protect the device from any involuntary program/erase during power-transitions.

Each device in a system should have VDD decoupled with a 0.1µF capacitor. The PCB track

widths should be sufficient to carry the required program and erase currents

3.11 VSS Ground

Ground, VSS, is the reference for the power supply. It must be connected to the system

ground.

NAND04GW3B2B, NAND08GW3B2A Bus operations

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4 Bus operations

There are six standard bus operations that control the memory. Each of these is described

in this section, see Table 4: Bus Operations, for a summary.

Typically, glitches of less than 5 ns on Chip Enable, Write Enable and Read Enable are

ignored by the memory and do not affect bus operations.

4.1 Command Input

Command Input bus operations are used to give commands to the memory.

The Commands are input on I/O0-I/O7. Commands are accepted when Chip Enable is Low,

Command Latch Enable is High, Address Latch Enable is Low and Read Enable is High.

They are latched on the rising edge of the Write Enable signal.

See Figure 21 and Ta bl e 2 0 for details of the timings requirements.

4.2 Address Input

Address Input bus operations are used to input the memory addresses.

Addresses are input on I/O0-I/O7. Five bus cycles are required to input the addresses (refer

to Table 5: Address Insertion).

The addresses are accepted when Chip Enable is Low, Address Latch Enable is High,

Command Latch Enable is Low and Read Enable is High. They are latched on the rising

edge of the Write Enable signal.

See Figure 22 and Ta bl e 2 0 for details of the timings requirements.

4.3 Data Input

Data Input bus operations are used to input the data to be programmed.

Data is accepted only when Chip Enable is Low, Address Latch Enable is Low, Command

Latch Enable is Low and Read Enable is High. The data is latched on the rising edge of the

Write Enable signal. The data is input sequentially using the Write Enable signal.

See Figure 23 and Ta bl e 2 0 and Ta bl e 2 1 for details of the timings requirements.

4.4 Data Output

Data Output bus operations are used to read: the data in the memory array, the Status

Data is output when Chip Enable is Low, Write Enable is High, Address Latch Enable is Low,

and Command Latch Enable is Low.

The data is output sequentially using the Read Enable signal.

See Figure 24 and Ta bl e 2 1 for details of the timings requirements.

Bus operations NAND04GW3B2B, NAND08GW3B2A

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4.5 Write Protect

Write Protect bus operations are used to protect the memory against program or erase

operations. When the Write Protect signal is Low the device will not accept program or erase

operations and so the contents of the memory array cannot be altered. The Write Protect

signal is not latched by Write Enable to ensure protection even during power-up.

4.6 Standby

When Chip Enable is High the memory enters Standby mode, the device is deselected,

outputs are disabled and power consumption is reduced.

Co mmand set

Table 4. Bus Operations

Bus Operation E AL CL R WWP I/O0 - I/O7

Command Input VIL VIL VIH VIH Rising X(1)

1. WP must be VIH when issuing a program or erase command.

Command

Address Input VIL VIH VIL VIH Rising X Address

Data Input VIL VIL VIL VIH Rising VIH Data Input

Data Output VIL VIL VIL Falling VIH X Data Output

Write Protect XXXX X V

IL X

Standby VIH XXX XV

IL/VDD X

Table 5. Address Insertion

Bus

Cycle(1)

1. Any additional address input cycles will be ignored.

I/O7 I/O6 I/O5 I/O4 I/O3 I/O2 I/O1 I/O0

1st A7 A6 A5 A4 A3 A2 A1 A0

2nd VIL VIL VIL VIL A11 A10 A9 A8

3rd A19 A18 A17 A16 A15 A14 A13 A12

4th A27 A26 A25 A24 A23 A22 A21 A20

5th VIL VIL VIL VIL VIL A30(2)

2. A30 is only valid for the NAND08GW3B2A.

A29 A28

Table 6. Address Definition

Address Definition

A0 - A11 Column Address

A12 - A17 Page Address

A18 - A29 Block Address (NAND04GW3B2B)

A18 - A30 Block Address (NAND08GW3B2A)

NAND04GW3B2B, NAND08GW3B2A Command set

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5 Command set

All bus write operations to the device are interpreted by the Command Interface. The

Commands are input on I/O0-I/O7 and are latched on the rising edge of Write Enable when

the Command Latch Enable signal is high. Device operations are selected by writing

specific commands to the Command Register. The two-step command sequences for

program and erase operations are imposed to maximize data security.

The Commands are summarized in Ta bl e 7 .

Table 7. Commands

Command

Bus Write Operations(1) Commands

accepted

during busy

1st cycle 2nd cycle 3rd cycle 4th cycle

Read 00h 30h – –

Random Data Output 05h E0h – –

Cache Read 00h 31h – –

Exit Cache Read 34h – – – Ye s (2)

Page Program

(Sequential Input default) 80h 10h – –

Random Data Input 85h – – –

Copy Back Program 00h 35h 85h 10h

Cache Program 80h 15h – –

Block Erase 60h D0h – –

Reset FFh – – – Ye s

Read Electronic Signature 90h – – –

Read Status Register 70h – – – Ye s

Read Block Lock Status 7Ah – – –

Blocks Unlock 23h 24h – –

Blocks Lock 2Ah – – –

Blocks Lock-Down 2Ch – – –

1. The bus cycles are only shown for issuing the codes. The cycles required to input the addresses or input/output data are

not shown.

2. Only during Cache Read busy.

Device operations NAND04GW3B2B, NAND08GW3B2A

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6 Device operations

The following section gives the details of the device operations.

6.1 Read Memory Array

At Power-Up the device defaults to Read mode. To enter Read mode from another mode the

Read command must be issued, see Table 7: Commands. Once a Read command is

issued, subsequent consecutive Read commands only require the confirm command code

(30h).

Once a Read command is issued two types of operations are available: Random Read and

Page Read.

6.1.1 Random Read

Each time the Read command is issued the first read is Random Read.

6.1.2 Page Read

After the first Random Read access, the page data (2112 Bytes) are transferred to the Page

Buffer in a time of tWHBH (refer to Ta bl e 2 1 for value). Once the transfer is complete the

Ready/Busy signal goes High. The data can then be read out sequentially (from selected

column address to last column address) by pulsing the Read Enable signal.

The device can output random data in a page, instead of the consecutive sequential data, by

issuing a Random Data Output command.

The Random Data Output command can be used to skip some data during a sequential

data output.

The sequential operation can be resumed by changing the column address of the next data

to be output, to the address which follows the Random Data Output command.

The Random Data Output command can be issued as many times as required within a

page.

The Random Data Output command is not accepted during Cache Read operations.

NAND04GW3B2B, NAND08GW3B2A Device operations

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Figure 5. Read Operations

I/O

00h

ai12469

Busy

Command

Code

Data Output (sequentially)

Address Input

tBLBH1

30h

Command

Code

Device operations NAND04GW3B2B, NAND08GW3B2A

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Figure 6. Random Data Output During Sequential Data Output

I/O

Address

Inputs

ai08658

Data Output

Busy

tBLBH1

(Read Busy time)

00h

Cmd

Code

30h

Address

Inputs Data Output

05h E0h

5 Add cycles

Main Area Spare

Area

Col Add 1,2

Row Add 1,2,3

Cmd

Code

Cmd

Code

Cmd

Code

2Add cycles

Main Area Spare

Area

Col Add 1,2

NAND04GW3B2B, NAND08GW3B2A Device operations

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6.2 Cache Read

The Cache Read operation is used to improve the read throughput by reading data using

the Cache Register. As soon as the user starts to read one page, the device automatically

loads the next page into the Cache Register.

An Cache Read operation consists of three steps (see Table 7: Commands):

1. One bus cycle is required to setup the Cache Read command (the same as the

standard Read command).

2. Five (refer to Table 5: Address Insertion) bus cycles are then required to input the Start

Address.

3. One bus cycle is required to issue the Cache Read confirm command to start the P/E/R

Controller.

The Start Address must be at the beginning of a page (Column Address = 00h, see Ta bl e 6 :

Address Definition). This allows the data to be output uninterrupted after the latency time

(tBLBH1), see Figure 7: Cache Read Operation.

The Ready/Busy signal can be used to monitor the start of the operation. During the latency

period the Ready/Busy signal goes Low, after this the Ready/Busy signal goes High, even if

the device is internally downloading page n+1.

Once the Cache Read operation has started, the Status Register can be read using the

Read Status Register command.

During the operation, SR5 can be read, to find out whether the internal reading is ongoing

(SR5 = ‘0’), or has completed (SR5 = ‘1’), while SR6 indicates whether the Cache Register

is ready to download new data.

To exit the Cache Read operation an Exit Cache Read command must be issued (see

Table 7: Commands).

If the Exit Cache Read command is issued while the device is internally reading page n+1,

page n will still be output, but not page n+1.

Figure 7. Cache Read Operation

1. For NAND08GW3B2A, A30 can not be changed during the Cache Read Operation.

I/O

Address

Inputs

ai8661c

00h

Read

Setup

Code

31h

Cache

Read

Confirm

Code

Busy

tBLBH1

(Read Busy time)

1st page

Data Output

2nd page 3rd page last page(1)

34h

Exit

Cache

Read

Code

Block N

tBLBH4

tRHRL2 tRHRL2

Device operations NAND04GW3B2B, NAND08GW3B2A

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6.3 Page Program

The Page Program operation is the standard operation to program data to the memory

array. Generally, the page is programmed sequentially, however the device does support

Random Input within a page.

It is recommended to address pages sequentially within a given block.

The memory array is programmed by page, however partial page programming is allowed

where any number of Bytes (1 to 2112) can be programmed.

The maximum number of consecutive partial page program operations allowed in the same

page is four. After exceeding this a Block Erase command must be issued before any further

program operations can take place in that page.

6.3.1 Sequential Input

To input data sequentially the addresses must be sequential and remain in one block.

For Sequential Input each Page Program operation consists of five steps (see Figure 8:

Page Program Operation):

1. One bus cycle is required to setup the Page Program (Sequential Input) command (see

Table 7: Commands).

2. Five bus cycles are then required to input the program address (refer to Ta bl e 5 :

Address Insertion).

3. The data is then loaded into the Data Registers.

4. One bus cycle is required to issue the Page Program confirm command to start the

P/E/R Controller. The P/E/R will only start if the data has been loaded in step 3.

5. the P/E/R Controller then programs the data into the array.

6.3.2 Random Data Input in page

During a Sequential Input operation, the next sequential address to be programmed can be

replaced by a random address, by issuing a Random Data Input command. The following

two steps are required to issue the command:

1. One bus cycle is required to setup the Random Data Input command (see Ta bl e 7 :

Commands)

2. Two bus cycles are then required to input the new column address (refer to Ta b l e 5 :

Address Insertion)

Random Data Input can be repeated as often as required in any given page.

Once the program operation has started the Status Register can be read using the Read

Status Register command. During program operations the Status Register will only flag

errors for bits set to '1' that have not been successfully programmed to '0'.

During the program operation, only the Read Status Register and Reset commands will be

accepted, all other commands will be ignored.

Once the program operation has completed the P/E/R Controller bit SR6 is set to ‘1’ and the

Ready/Busy signal goes High.

The device remains in Read Status Register mode until another valid command is written to

the Command Interface.

NAND04GW3B2B, NAND08GW3B2A Device operations

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Figure 8. Page Program Operation

Figure 9. Random Data Input During Sequential Data Input

I/O

Address Inputs SR0

ai08659

Data Input 10h 70h

80h

Page Program

Setup Code

Confirm

Code Read Status Register

Busy

tBLBH2

(Program Busy time)

I/O Address

Inputs

ai08664

Data Intput

80h

Cmd

Code

Address

Inputs Data Input

85h

5 Add cycles

Main Area Spare

Area

Col Add 1,2Row Add 1,2,3

Cmd

Code

2 Add cycles

Main Area Spare

Area

Col Add 1,2

Busy

tBLBH2

(Program Busy time)

SR0

10h 70h

Confirm

Code Read Status Register

Device operations NAND04GW3B2B, NAND08GW3B2A

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6.4 Copy Back Program

The Copy Back Program operation is used to copy the data stored in one page and

reprogram it in another page.

The Copy Back Program operation does not require external memory and so the operation

is faster and more efficient because the reading and loading cycles are not required. The

operation is particularly useful when a portion of a block is updated and the rest of the block

needs to be copied to the newly assigned block.

If the Copy Back Program operation fails an error is signalled in the Status Register.

However as the standard external ECC cannot be used with the Copy Back Program

operation bit error due to charge loss cannot be detected. For this reason it is recommended

to limit the number of Copy Back Program operations on the same data and or to improve

the performance of the ECC.

The Copy Back Program operation requires four steps:

1. The first step reads the source page. The operation copies all 2112 Bytes from the

page into the Data Buffer. It requires:

– One bus write cycle to setup the command

– 5 bus write cycles to input the source page address

– One bus write cycle to issue the confirm command code

2. When the device returns to the ready state (Ready/Busy High), the next bus write cycle

of the command is given with the 5 bus cycles to input the target page address. See

Ta b le 8 for the addresses that must be the same for the source and target page.

3. Then the confirm command is issued to start the P/E/R Controller.

To see the Data Input cycle for modifying the source page and an example of the Copy Back

Program operation refer to Figure 10: Copy Back Program.

A data input cycle to modify a portion or a multiple distant portion of the source page, is

shown in Figure 11: Page Copy Back Program with Random Data Input.

Figure 10. Copy Back Program

1. Copy back program is only permitted between odd address pages or even address pages.

Table 8. Copy Back Program addresses

Density Source and target page addresses

4 Gbits no constraint

8 Gbits same A30

I/O

Source

Add Inputs

ai09858b

85h

Copy Back

Code

Read

Code Read Status Register

Target

Add Inputs

tBLBH1

(Read Busy time)

Busy

tBLBH2

(Program Busy time)

00h 10h 70h SR0

Busy

35h

NAND04GW3B2B, NAND08GW3B2A Device operations

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Figure 11. Page Copy Back Program with Random Data Input

I/O

Source

Add Inputs

ai11001

85h

Read

Code

Target

Add Inputs

tBLBH1

(Read Busy time)

00h

Busy

35h 85h Data

2 Cycle

Add Inputs

Data

Copy Back

Code

10h 70h

Unlimited number of repetitions

Busy

tBLBH2

(Program Busy time)

SR0

Device operations NAND04GW3B2B, NAND08GW3B2A

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6.5 Cache Program

The Cache Program operation is used to improve the programming throughput by

programming data using the Cache Register. The Cache Program operation can only be

used within one block. The Cache Register allows new data to be input while the previous

data that was transferred to the Page Buffer is programmed into the memory array. The

following sequence is required to perform a Cache Program operation (refer to Figure 12):

1. First of all the program setup command is issued (one bus cycle to issue the program

setup command then five bus write cycles to input the address), the data is then input

(up to 2112 Bytes) and loaded into the Cache Register.

2. One bus cycle is required to issue the confirm command to start the P/E/R Controller.

3. The P/E/R Controller then transfers the data to the Page Buffer. During this the device

is busy for a time of tBLBH5.

4. Once the data is loaded into the Page Buffer the P/E/R Controller programs the data

into the memory array. As soon as the Cache Registers are empty (after tBLBH5) a new

Cache program command can be issued, while the internal programming is still

executing.

Once the program operation has started the Status Register can be read using the Read

Status Register command. During Cache Program operations SR5 can be read to find out

whether the internal programming is ongoing (SR5 = ‘0’) or has completed (SR5 = ‘1’) while

SR6 indicates whether the Cache Register is ready to accept new data. If any errors have

been detected on the previous page (Page N-1), the Cache Program Error Bit SR1 will be

set to ‘1', while if the error has been detected on Page N the Error Bit SR0 will be set to '1’.

When the next page (Page N) of data is input with the Cache Program command, tBLBH5 is

affected by the pending internal programming. The data will only be transferred from the

Cache Register to the Page Buffer when the pending program cycle is finished and the Page

Buffer is available.

If the system monitors the progress of the operation using only the Ready/Busy signal, the

last page of data must be programmed with the Page Program confirm command (10h).

If the Cache Program confirm command (15h) is used instead, Status Register bit SR5 must

be polled to find out if the last programming is finished before starting any other operations.

Figure 12. Cache Program Operation

1. Up to 64 pages can be programmed in one Cache Program operation.

2. tCACHEPG is the program time for the last page + the program time for the (last − 1)th page − (Program command cycle time

+ Last page data loading time).

3. For NAND08GW3B2A, A30 can not be changed during the Cache Program operation.

I/O

Address

Inputs

ai08672

80h

Page

Program

Code

Read Status

Busy

Data

Inputs 15h

Cache

Program

Code

80h

Page

Program

Code

15h

Cache Program

Confirm Code

Busy

Last Page(3)

tBLBH5

(Cache Busy time)

tBLBH5 tCACHEPG

SR070h80h 10h

Page

Program

Confirm Code

Busy

First Page Second Page

(can be repeated up to 63 times)

Address

Inputs

Data

Inputs

Address

Inputs

Data

Inputs

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6.6 Block Erase

Erase operations are done one block at a time. An erase operation sets all of the bits in the

addressed block to ‘1’. All previous data in the block is lost.

An erase operation consists of three steps (refer to Figure 13: Block Erase Operation):

1. One bus cycle is required to setup the Block Erase command. Only addresses A18-

A29 are used, the other address inputs are ignored.

2. Three bus cycles are then required to load the address of the block to be erased. Refer

to Table 6: Address Definition for the block addresses of each device.

3. One bus cycle is required to issue the Block Erase confirm command to start the P/E/R

Controller.

The operation is initiated on the rising edge of write Enable, W, after the confirm command

is issued. The P/E/R Controller handles Block Erase and implements the verify process.

During the Block Erase operation, only the Read Status Register and Reset commands will

be accepted, all other commands will be ignored.

Once the program operation has completed the P/E/R Controller bit SR6 is set to ‘1’ and the

Ready/Busy signal goes High. If the operation completed successfully, the Write Status Bit

SR0 is ‘0’, otherwise it is set to ‘1’.

Figure 13. Block Erase Operation

6.7 Reset

The Reset command is used to reset the Command Interface and Status Register. If the

Reset command is issued during any operation, the operation will be aborted. If it was a

program or erase operation that was aborted, the contents of the memory locations being

modified will no longer be valid as the data will be partially programmed or erased.

If the device has already been reset then the new Reset command will not be accepted.

The Ready/Busy signal goes Low for tBLBH4 after the Reset command is issued. The value

of tBLBH4 depends on the operation that the device was performing when the command was

issued, refer to Ta bl e 2 1 for the values.

I/O

Block Address

Inputs SR0

ai07593

D0h 70h

60h

Block Erase

Setup Code

Confirm

Code Read Status Register

Busy

tBLBH3

(Erase Busy time)

Device operations NAND04GW3B2B, NAND08GW3B2A

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6.8 Read Status Register

The device contains a Status Register which provides information on the current or previous

Program or Erase operation. The various bits in the Status Register convey information and

errors on the operation.

The Status Register is read by issuing the Read Status Register command. The Status

Enable or Read Enable, whichever occurs last. When several memories are connected in a

system, the use of Chip Enable and Read Enable signals allows the system to poll each

device separately, even when the Ready/Busy pins are common-wired. It is not necessary to

toggle the Chip Enable or Read Enable signals to update the contents of the Status

After the Read Status Register command has been issued, the device remains in Read

Status Register mode until another command is issued. Therefore if a Read Status Register

command is issued during a Random Read cycle a new Read command must be issued to

continue with a Page Read operation.

The Status Register bits are summarized in Table 9: Status Register Bits,. Refer to Table 9 :

Status Register Bits in conjunction with the following text descriptions.

6.8.1 Write Protection Bit (SR7)

The Write Protection bit can be used to identify if the device is protected or not. If the Write

Protection bit is set to ‘1’ the device is not protected and program or erase operations are

allowed. If the Write Protection bit is set to ‘0’ the device is protected and program or erase

operations are not allowed.

6.8.2 P/E/R Controller and Cache Ready/Busy Bit (SR6)

Status Register bit SR6 has two different functions depending on the current operation.

During Cache operations SR6 acts as a Cache Ready/Busy bit, which indicates whether the

Cache Register is ready to accept new data. When SR6 is set to '0', the Cache Register is

busy and when SR6 is set to '1', the Cache Register is ready to accept new data.

During all other operations SR6 acts as a P/E/R Controller bit, which indicates whether the

P/E/R Controller is active or inactive. When the P/E/R Controller bit is set to ‘0’, the P/E/R

Controller is active (device is busy); when the bit is set to ‘1’, the P/E/R Controller is inactive

(device is ready).

6.8.3 P/E/R Controller Bit (SR5)

The Program/Erase/Read Controller bit indicates whether the P/E/R Controller is active or

inactive. When the P/E/R Controller bit is set to ‘0’, the P/E/R Controller is active (device is

busy); when the bit is set to ‘1’, the P/E/R Controller is inactive (device is ready).

6.8.4 Cache Program Error Bit (SR1)

The Cache Program Error bit can be used to identify if the previous page (page N-1) has

been successfully programmed or not in a Cache Program operation. SR1 is set to ’1’ when

NAND04GW3B2B, NAND08GW3B2A Device operations

29/58

the Cache Program operation has failed to program the previous page (page N-1) correctly.

If SR1 is set to ‘0’ the operation has completed successfully.

The Cache Program Error bit is only valid during Cache Program operations, during other

operations it is Don’t Care.

6.8.5 Error Bit (SR0)

The Error bit is used to identify if any errors have been detected by the P/E/R Controller. The

Error Bit is set to ’1’ when a program or erase operation has failed to write the correct data to

the memory. If the Error Bit is set to ‘0’ the operation has completed successfully. The Error

Bit SR0, in a Cache Program operation, indicates a failure on Page N.

6.8.6 SR4, SR3 and SR2 are Reserved

Table 9. Status Register Bits

Bit Name Logic Level Definition

SR7 Write Protection '1' Not Protected

'0' Protected

SR6

Program/ Erase/ Read

Controller

'1' P/E/R C inactive, device ready

'0' P/E/R C active, device busy

Cache Ready/Busy '1' Cache Register ready (Cache only)

'0' Cache Register busy (Cache only)

SR5 Program/ Erase/ Read

Controller(1)

'1' P/E/R C inactive, device ready

'0' P/E/R C active, device busy

SR4, SR3, SR2 Reserved Don’t Care

SR1 Cache Program Error(2) '1' Page N-1 failed in Cache Program operation

'0' Page N-1 programmed successfully

SR0

Generic Error ‘1’ Error – operation failed

‘0’ No Error – operation successful

Cache Program Error ‘1’ Page N failed in Cache Program operation

‘0’ Page N programmed successfully

1. Only valid for Cache operations, for other operations it is same as SR6.

2. Only valid for Cache Program operations, for other operations it is Don’t Care.

Device operations NAND04GW3B2B, NAND08GW3B2A

30/58

6.9 Read Electronic Signature

The device contains a Manufacturer Code and Device Code. To read these codes three steps

are required:

1. One Bus Write cycle to issue the Read Electronic Signature command (90h)

2. One Bus Write cycle to input the address (00h)

3. Four Bus Read Cycles to sequentially output the data (as shown in Table 10: Electronic

Signature).

Table 10. Electronic Signature

Root Part

Number

Byte 1 Byte 2 Byte 3

(see Ta b l e 1 1 )

Byte 4

(see Ta bl e 1 2 )

Manufacturer Code Device code

NAND04GW3B2B 20h DCh 80h 95h

NAND08GW3B2A 20h D3h 81h 95h

Table 11. Electronic Signature Byte 3

I/O Definition Value Description

I/O1-I/O0 Internal Chip number

0 0

0 1

1 0

1 1

I/O3-I/O2 Cell Type

0 0

0 1

1 0

1 1

2-level cell

4-level cell

8-level cell

16-level cell

I/O5-I/O4 Number of simultaneously

programmed pages

0 0

0 1

1 0

1 1

I/O6 Interleaved Programming

between multiple devices

Not supported

Supported

I/O7 Cache Program 0

Not supported

Supported

NAND04GW3B2B, NAND08GW3B2A Device operations

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Table 12. Electronic Signature Byte 4

I/O Definition Value Description

I/O1-I/O0 Page Size

(Without Spare Area)

0 0

0 1

1 0

1 1

1 KBytes

2 KBytes

Reserved

I/O2 Spare Area Size

(Byte / 512 Byte)

I/O7, I/O3 Minimum sequential

access time

0 0

1 0

0 1

1 1

50ns

30ns

Reserved

I/O5-I/O4 Block Size

(without Spare Area)

0 0

0 1

1 0

1 1

64 KBytes

128 KBytes

256 KBytes

Reserved

I/O6 Organization 0

x16

Data Protection NAND04GW3B2B, NAND08GW3B2A

32/58

7 Data Protection

The device has both hardware and software features to protect against program and erase

operations.

It features a Write Protect, WP

, pin, which can be used to protect the device against program

and erase operations. It is recommended to keep WP at VIL during power-up and power-

down.

In addition, to protect the memory from any involuntary program/erase operations during

power-transitions, the device has an internal voltage detector which disables all functions

whenever VDD is below VLKO (see Table 19: DC Characteristics).

The device features a Block Lock mode, which is enabled by setting the Power-Up Read

Enable, Lock/Unlock Enable, PRL, signal to High.

The Block Lock mode has two levels of software protection.

●Blocks Lock/Unlock

●Blocks Lock-down

Refer to Figure 16: Block Protection State Diagram for an overview of the protection

mechanism.

7.1 Blocks Lock

All the blocks are locked simultaneously by issuing a Blocks Lock command (see Table 7 :

Commands).

All blocks are locked after power-up and when the Write Protect signal is Low.

Once all the blocks are locked, one sequence of consecutive blocks can be unlocked by

using the Blocks Unlock command.

Refer to Figure 21: Command Latch AC Waveforms for details on how to issue the

command.

7.2 Blocks Unlock

A sequence of consecutive locked blocks can be unlocked, to allow program or erase

operations, by issuing an Blocks Unlock command (see Table 7: Commands).

The Blocks Unlock command consists of four steps:

●One bus cycle to setup the command.

●Three bus cycles to give the Start Block Address (refer to Table 6: Address Definition,

and Figure 14: Blocks Unlock Operation).

●One bus cycle to confirm the command.

●Three bus cycles to give the End Block Address (refer to Table 6: Address Definition,

and Figure 14: Blocks Unlock Operation).

The Start Block Address must be nearer the logical LSB (Least Significant Bit) than End

Block Address.

NAND04GW3B2B, NAND08GW3B2A Data Protection

33/58

If the Start Block Address is the same as the End Block Address, only one block is unlocked.

Only one consecutive area of blocks can be unlocked at any one time. It is not possible to

unlock multiple areas.

Figure 14. Blocks Unlock Operation

7.3 Blocks Lock-Down

The Lock-Down feature provides an additional level of protection. A Locked-down block

cannot be unlocked by a software command. Locked-Down blocks can only be unlocked by

setting the Write Protect signal to Low for a minimum of 100ns.

Only locked blocks can be locked-down. The command has no affect on unlocked blocks.

Refer to Figure 21: Command Latch AC Waveforms for details on how to issue the

command.

7.4 Block Lock Status

In Block Lock mode (PRL High) the Block Lock Status of each block can be checked by

issuing a Read Block Lock Status command (see Table 7: Commands).

The command consists of:

●One bus cycle to give the command code

●Three bus cycles to give the block address

After this, a read cycle will then output the Block Lock Status on the I/O pins on the falling

edge of Chip Enable or Read Enable, whichever occurs last. Chip Enable or Read Enable

do not need to be toggled to update the status.

The Read Block Lock Status command will not be accepted while the device is busy (RB

Low).

The device will remain in Read Block Lock Status mode until another command is issued.

I/O

Start Block Address, 3 cycles

ai08670

23h

Blocks Unlock

Command

Add1 Add2 Add3 24h Add1 Add2 Add3

End Block Address, 3 cycles

Data Protection NAND04GW3B2B, NAND08GW3B2A

34/58

Figure 15. Read Block Lock Status Operation

I/O

Block Address, 3 cycles

ai08669

7Ah

Read Block Lock

Status Command

Add1 Add2 Add3 Dout

Block Lock Status

tWHRL

Table 13. Block Lock Status(1)

Status I/O7-I/O3 I/O2 I/O1 I/O0

Locked X 0 1 0

Unlocked X 1 1 0

Locked-Down X 0 0 1

Unlocked in Locked-

Down Area X101

1. X = Don’t Care.

NAND04GW3B2B, NAND08GW3B2A Data Protection

35/58

Figure 16. Block Protection State Diagram

1. PRL must be High for the software commands to be accepted.

AI08663c

Locked

Locked-Down

Unlocked in

Locked Area

Power-Up

Block Unlock

Command Blocks Lock-Down

Command

WP VIL >100ns

Blocks Lock

Command

WP VIL >100ns

(start + end block address)

Unlocked in

Locked-Down

Area

Blocks Lock-Down

Command

WP VIL >100ns

Software algorithms NAND04GW3B2B, NAND08GW3B2A

36/58

8 Software algorithms

This section gives information on the software algorithms that Numonyx recommends to

implement to manage the Bad Blocks and extend the lifetime of the NAND device.

NAND Flash memories are programmed and erased by Fowler-Nordheim tunnelling using a

high voltage. Exposing the device to a high voltage for extended periods can cause the

oxide layer to be damaged. For this reason, the number of program and erase cycles is

limited (see Table 15: Program, Erase Times and Program Erase Endurance Cycles for

value) and it is recommended to implement Garbage Collection, a Wear-Leveling Algorithm

and an Error Correction Code, to extend the number of program and erase cycles and

increase the data retention.

To help integrate a NAND memory into an application Numonyx can provide a File System

OS Native reference software, which supports the basic commands of file management.

Contact the nearest Numonyx sales office for more details.

8.1 Bad Block Management

Devices with Bad Blocks have the same quality level and the same AC and DC

characteristics as devices where all the blocks are valid. A Bad Block does not affect the

performance of valid blocks because it is isolated from the bit line and common source line

by a select transistor.

The devices are supplied with all the locations inside valid blocks erased (FFh). The Bad

Block Information is written prior to shipping. Any block, where the 1st and 6th Bytes, or 1st

Word, in the spare area of the 1st page, does not contain FFh, is a Bad Block.

The Bad Block Information must be read before any erase is attempted as the Bad Block

Information may be erased. For the system to be able to recognize the Bad Blocks based on

the original information it is recommended to create a Bad Block table following the

flowchart shown in Figure 17: Bad Block management flowchart.

8.2 NAND Flash memory failure modes

Over the lifetime of the device additional Bad Blocks may develop.

To implement a highly reliable system, all the possible failure modes must be considered:

●Program/Erase failure: in this case the block has to be replaced by copying the data to

a valid block. These additional Bad Blocks can be identified as attempts to program or

erase them will give errors in the Status Register.

As the failure of a Page Program operation does not affect the data in other pages in

the same block, the block can be replaced by re-programming the current data and

copying the rest of the replaced block to an available valid block. The Copy Back

Program command can be used to copy the data to a valid block. See Section 6.4:

Copy Back Program for more details.

●Read failure: in this case, ECC correction must be implemented. To efficiently use the

memory space, it is recommended to recover single-bit error in read by ECC, without

replacing the whole block.

Refer to Ta b le 1 4 for the procedure to follow if an error occurs during an operation.

NAND04GW3B2B, NAND08GW3B2A Software algorithms

37/58

Figure 17. Bad Block management flowchart

Table 14. Block failure

Operation Procedure

Erase Block Replacement

Program Block Replacement or ECC

Read ECC

AI07588C

START

END

YES

Block Address =

Block 0

Data

= FFh?

Last

block?

Increment

Block Address

Update

Bad Block table

Software algorithms NAND04GW3B2B, NAND08GW3B2A

38/58

8.3 Garbage Collection

When a data page needs to be modified, it is faster to write to the first available page, and

the previous page is marked as invalid. After several updates it is necessary to remove

invalid pages to free some memory space.

To free this memory space and allow further program operations it is recommended to

implement a Garbage Collection algorithm. In a Garbage Collection software the valid

pages are copied into a free area and the block containing the invalid pages is erased (see

Figure 18: Garbage Collection).

Figure 18. Garbage Collection

8.4 Wear-leveling algorithm

For write-intensive applications, it is recommended to implement a Wear-leveling Algorithm

to monitor and spread the number of write cycles per block.

In memories that do not use a Wear-Leveling Algorithm not all blocks get used at the same

rate. Blocks with long-lived data do not endure as many write cycles as the blocks with

frequently-changed data.

The Wear-leveling Algorithm ensures that equal use is made of all the available write cycles

for each block. There are two wear-leveling levels:

●First Level Wear-leveling, new data is programmed to the free blocks that have had the

fewest write cycles.

●Second Level Wear-leveling, long-lived data is copied to another block so that the

original block can be used for more frequently-changed data.

The Second Level Wear-leveling is triggered when the difference between the maximum

and the minimum number of write cycles per block reaches a specific threshold.

8.5 Error Correction Code

An Error Correction Code (ECC) can be implemented in the NAND Flash memories to

identify and correct errors in the data.

For every 2048 bits in the device it is recommended to implement 22 bits of ECC (16 bits for

line parity plus 6 bits for column parity).

Valid

Page

Invalid

Page Free

Page

(Erased)

Old Area

AI07599B

New Area (After GC)

NAND04GW3B2B, NAND08GW3B2A Software algorithms

39/58

An ECC model is available in VHDL or Verilog. Contact the nearest Numonyx sales office for

more details.

Figure 19. Error Detection

8.6 Hardware simulation models

8.6.1 Behavioral simulation models

Denali Software Corporation models are platform independent functional models designed

to assist customers in performing entire system simulations (typical VHDL/Verilog). These

models describe the logic behavior and timings of NAND Flash devices, and so allow

software to be developed before hardware.

8.6.2 IBIS simulations models

IBIS (I/O Buffer Information Specification) models describe the behavior of the I/O buffers

and electrical characteristics of Flash devices.

These models provide information such as AC characteristics, rise/fall times and package

mechanical data, all of which are measured or simulated at voltage and temperature ranges

wider than those allowed by target specifications.

IBIS models are used to simulate PCB connections and can be used to resolve compatibility

issues when upgrading devices. They can be imported into SPICETOOLS.

New ECC generated

during read

XOR previous ECC

with new ECC

All results

= zero?

22 bit data = 0

YES

11 bit data = 1

1 bit data = 1

Correctable

Error ECC Error

No Error

ai08332

>1 bit

= zero?

YES

Program and Erase times and endurance cycles NAND04GW3B2B, NAND08GW3B2A

40/58

9 Program and Erase times and endurance cycles

The Program and Erase times and the number of Program/ Erase cycles per block are

shown in Tabl e 1 5 .

Table 15. Program, Erase Times and Program Erase Endurance Cycles

Parameters

NAND Flash

Unit

Min Typ Max

Page Program Time 200 700 µs

Block Erase Time 23ms

Program/Erase Cycles per block (with

ECC) 100,000 cycles

Data Retention 10 years

NAND04GW3B2B, NAND08GW3B2A Maximum rating

41/58

10 Maximum rating

Stressing the device above the ratings listed in Table 16: Absolute Maximum Ratings, may

cause permanent damage to the device. These are stress ratings only and operation of the

device at these or any other conditions above those indicated in the Operating sections of

this specification is not implied. Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability. Refer also to the Numonyx SURE Program

and other relevant quality documents.

Table 16. Absolute Maximum Ratings

Symbol Parameter

Value

Unit

Min Max

TBIAS Temperature Under Bias – 50 125 °C

TSTG Storage Temperature – 65 150 °C

VIO(1)

1. Minimum Voltage may undershoot to –2V for less than 20ns during transitions on input and I/O pins.

Maximum voltage may overshoot to VDD + 2V for less than 20ns during transitions on I/O pins.

Input or Output Voltage – 0.6 4.6 V

VDD Supply Voltage – 0.6 4.6 V

DC and AC parameters NAND04GW3B2B, NAND08GW3B2A

42/58

11 DC and AC parameters

This section summarizes the operating and measurement conditions, and the DC and AC

characteristics of the device. The parameters in the DC and AC characteristics Tables that

follow, are derived from tests performed under the Measurement Conditions summarized in

Ta bl e 1 7 . Designers should check that the operating conditions in their circuit match the

measurement conditions when relying on the quoted parameters.

Table 17. Operating and AC Measurement Conditions

Parameter

NAND Flash

Units

Min Max

Supply Voltage (VDD)2.7 3.6V

Ambient Temperature (TA)Grade 1 0 70 °C

Grade 6 –40 85 °C

Load Capacitance (CL) (1 TTL GATE and CL)50pF

Input Pulses Voltages 0 VDD V

Input and Output Timing Ref. Voltages VDD/2 V

Output Circuit Resistor Rref 8.35 kΩ

Input Rise and Fall Times 5 ns

Table 18. Capacitance(1)

1. TA = 25°C, f = 1MHz. CIN and CI/O are not 100% tested.

Symbol Parameter Test Condition Typ Max Unit

CIN Input Capacitance VIN = 0V 10 pF

CI/O

Input/Output

Capacitance(2)

2. Input/output capacitances double in stacked devices.

VIL = 0V 10 pF

NAND04GW3B2B, NAND08GW3B2A DC and AC parameters

43/58

Figure 20. Equivalent Testing Circuit for AC Characteristics Measurement

Ai11085

NAND Flash

2Rref

VDD

2Rref

GND

Table 19. DC Characteristics

Symbol Parameter Test Conditions Min Typ Max Unit

IDD1

Operating

Current

Sequential

Read

tRLRL minimum

E=VIL, IOUT = 0 mA -1530mA

IDD2 Program - - 15 30 mA

IDD3 Erase - - 15 30 mA

IDD4 Standby current (TTL)(1) E=VIH, WP=0/VDD 1mA

IDD5 Standby Current (CMOS)(1) E=VDD-0.2,

WP=0/VDD

-10 50 µA

ILI Input Leakage Current(1) VIN= 0 to VDDmax - - ±10 µA

ILO Output Leakage Current(1) VOUT= 0 to VDDmax - - ±10 µA

VIH Input High Voltage -0.8VDD - VDD+0.3 V

VIL Input Low Voltage --0.3 -0.2VDD V

VOH Output High Voltage Level IOH = -400µA 2.4 - - V

VOL Output Low Voltage Level IOL = 2.1mA - - 0.4 V

IOL (RB)Output Low Current (RB) VOL = 0.4V 810 mA

VLKO

VDD Supply Voltage (Erase and

Program lockout) - - - 1.7 V

1. leakage current and standby current double in stacked devices.

DC and AC parameters NAND04GW3B2B, NAND08GW3B2A

44/58

Table 20. AC Characteristics for Command, Address, Data Input

Symbol Alt.

Symbol Parameter NAND04GW3B2B,

NAND08GW3B2A Unit

tALLWH tALS

Address Latch Low to Write Enable high AL Setup time Min 15 ns

tALHWH Address Latch High to Write Enable high

tCLHWH tCLS

Command Latch High to Write Enable high CL Setup time Min 15 ns

tCLLWH Command Latch Low to Write Enable high

tDVWH tDS Data Valid to Write Enable High Data Setup

time Min 15 ns

tELWH tCS Chip Enable Low to Write Enable high E Setup time Min 25 ns

tWHALH tALH

Write Enable High to Address Latch High AL Hold time Min 5ns

tWHALL Write Enable High to Address Latch Low

tWHCLH tCLH

Write Enable High to Command Latch High CL hold time Min 5ns

tWHCLL Write Enable High to Command Latch Low

tWHDX tDH Write Enable High to Data Transition Data Hold

time Min 5ns

tWHEH tCH Write Enable High to Chip Enable High E Hold time Min 5ns

tWHWL tWH Write Enable High to Write Enable Low W High Hold

time Min 10 ns

tWLWH tWP Write Enable Low to Write Enable High W Pulse

Width Min 15 ns

tWLWL tWC Write Enable Low to Write Enable Low Write Cycle

time Min 30 ns

Table 21. AC Characteristics for operations(1)

Symbol Alt.

Symbol Parameter NAND04GW3B2B,

NAND08GW3B2A Unit

tALLRL1 tAR

Address Latch Low to

Read Enable Low

Read Electronic Signature Min 15 ns

tALLRL2 Read cycle Min 15 ns

tBHRL tRR Ready/Busy High to Read Enable Low Min 20 ns

tBLBH1

Ready/Busy Low to

Ready/Busy High

Read Busy time Max 25 µs

tBLBH2 tPROG Program Busy time Max 700 µs

tBLBH3 tBERS Erase Busy time Max 3ms

tBLBH4 tRST

Reset Busy time, during ready Max 5µs

Reset Busy time, during read Max 5µs

Reset Busy time, during program Max 10 µs

Reset Busy time, during erase Max 500 µs

tBLBH5 tCBSY Cache Busy time Ty p 3µs

Max 700 µs

NAND04GW3B2B, NAND08GW3B2A DC and AC parameters

45/58

Figure 21. Command Latch AC Waveforms

tCLLRL tCLR Command Latch Low to Read Enable Low Min 15 ns

tDZRL tIR Data Hi-Z to Read Enable Low Min 0ns

tEHQZ tCHZ Chip Enable High to Output Hi-Z Max 50 ns

tRHQZ tRHZ Read Enable High to Output Hi-z Max 50 ns

tELQV tCEA Chip Enable Low to Output Valid Max 30 ns

tRHRL1 tREH

Read Enable High to

Read Enable Low Read Enable High Hold time Min 10 ns

tEHQX tOH

Chip Enable high to Output Hold Min 15 ns

tRHQX Read Enable high to Output Hold

tRLRH tRP

Read Enable Low to

Read Enable High Read Enable Pulse Width Min 15 ns

tRLRL tRC

Read Enable Low to

Read Enable Low Read Cycle time Min 30 ns

tRLQV tREA

Read Enable Low to

Output Valid

Read Enable Access time Max 25 ns

Read ES Access time(2)

tWHBH tR

Write Enable High to

Ready/Busy High Read Busy time Max 25 µs

tWHBL tWB Write Enable High to Ready/Busy Low Max 100 ns

tWHRL tWHR Write Enable High to Read Enable Low Min 60 ns

tRHRL2 tCRRH Read Enable High hold time during Cache Read operation Min 100 ns

tWHWH tADL(3) Last Address latched to Data Loading Time during Program

operations Min 100 ns

tVHWH

tVLWH

tWW(4) Write Protection time Min 100 ns

1. The time to Ready depends on the value of the pull-up resistor tied to the Ready/Busy pin. See Figure 33, Figure 34 and

Figure 35.

2. ES = Electronic Signature.

3. tADL is the time from W rising edge during the final address cycle to W rising edge during the first data cycle.

4. During a Program/Erase Enable Operation, tWW is the delay from WP high to W High.

During a Program/Erase Disable Operation, tWW is the delay from WP Low to W High.

Table 21. AC Characteristics for operations(1) (continued)

ai12470b

I/O

tCLHWH

tELWH

tWHCLL

tWHEH

tWLWH

tALLWH tWHALH

Command

tDVWH tWHDX

(CL Setup time) (CL Hold time)

(Data Setup time) (Data Hold time)

(ALSetup time) (AL Hold time)

H(E Setup time) (E Hold time)

DC and AC parameters NAND04GW3B2B, NAND08GW3B2A

46/58

Figure 22. Address Latch AC Waveforms

ai12471

I/O

tWLWH

tELWH tWLWL

tCLLWH

tWHWL

tALHWH

tDVWH

tWLWL tWLWL

tWLWHtWLWH tWLWH

tWHWL tWHWL

tWHDX

tWHALL

tDVWH

tWHDX

tDVWH

tWHDX

tDVWH

tWHDX

tWHALL

Adrress

cycle 1

tWHALL

(AL Setup time)

(AL Hold time)

Adrress

cycle 4

Adrress

cycle 3

Adrress

cycle 2

(CL Setup time)

(Data Setup time)

(Data Hold time)

(E Setup time)

Adrress

cycle 5

tWLWL

tWLWH

tDVWH

tWHDX

tWHWL

tWHALL

NAND04GW3B2B, NAND08GW3B2A DC and AC parameters

47/58

Figure 23. Data Input Latch AC Waveforms

1. Data In Last is 2112.

Figure 24. Sequential Data Output after Read AC waveforms

1. CL = Low, AL = Low, W = High.

tWHCLH

I/O

tALLWH

tWLWL

tWLWH

tWHEH

tWLWH

Data In 0 Data In 1 Data In

Last

tDVWH

tWHDX

tDVWH

tWHDX

tDVWH

tWHDX

ai12472

(Data Setup time)

(Data Hold time)

(ALSetup time)

(CL Hold time)

(E Hold time)

ai08031c

I/O

tRLRL1

tRLQV

tRHRL1

tRLQV

Data Out Data Out Data Out

tRHQZ

tBHRL

tRLQV

tRHQZ

tEHQZ

(Read Cycle time)

(R Accesstime)

(R High Holdtime)

tEHQX

DC and AC parameters NAND04GW3B2B, NAND08GW3B2A

48/58

Figure 25. Read Status Register AC Waveform

Figure 26. Read Electronic Signature AC Waveform

1. Refer to Table 10 for the values of the Manufacturer and Device Codes, and to Table 11 and Table 12 for the information

contained in Byte 3 and Byte 4.

tELWH

tDVWH

Status Register

Output

70h

I/O

tCLHWH

tWHDX

tWLWH

tWHCLL

tCLLRL

tDZRL

tRLQV

tEHQZ

tRHQZ

tWHRL

tELQV

tWHEH

ai12473

(Data Setup time) (Data Hold time)

90h 00h

Man.

code Device

code

I/O

tRLQV

Read Electronic

Signature

Command

1st Cycle

Address

ai08667

(Read ES Access time)

tALLRL1

Byte4

Byte3Byte1 Byte2

see Note.1

NAND04GW3B2B, NAND08GW3B2A DC and AC parameters

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Figure 27. Page Read operation AC Waveform

I/O

tWLWL

tWHBL

tALLRL2

00h

Data

NData

N+1 Data

N+2 Data

Last

tWHBH tRLRL

tEHQZ

tRHQZ

ai12474c

Busy

Command

Code

Address N Input

Data Output

from Address N to Last Byte or Word in Page

Add.N

cycle 1 Add.N

cycle 4

Add.N

cycle 3

Add.N

cycle 2

(Read Cycle time)

tRLRH

tBLBH1

30h

Add.N

cycle 5

tEHQX

tRHQX

DC and AC parameters NAND04GW3B2B, NAND08GW3B2A

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Figure 28. Page Program AC waveform

I/O

SR0

ai12475b

Last 10h

70h

80h

Page Program

Setup Code Confirm

Code Read Status Register

tWLWL tWLWL tWLWL

tWHBL

tBLBH2

Page

Program

Address Input Data Input

Add.N

cycle 1 Add.N

cycle 4

Add.N

cycle 3

Add.N

cycle 2

(Write Cycle time)

(Program Busy time)

Add.N

cycle 5

tWHWH

NAND04GW3B2B, NAND08GW3B2A DC and AC parameters

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Figure 29. Block Erase AC Waveform

Figure 30. Reset AC Waveform

D0h60h SR0

70h

ai08038c

tWHBL

tWLWL

tBLBH3

Block Erase

Setup Command Block Erase

I/O

Confirm

Code Read Status Register

Block Address Input

(Erase Busy time)

(Write Cycle time)

Add.

cycle 1 Add.

cycle 3

Add.

cycle 2

I/O

tBLBH4

FFh

ai08043

(Reset Busy time)

DC and AC parameters NAND04GW3B2B, NAND08GW3B2A

52/58

Figure 31. Program/Erase Enable Waveform

Figure 32. Program/Erase Disable Waveform

tVHWH

ai12477

I/O 80h 10h

tVLWH

ai12478

I/O 80h 10h

High

NAND04GW3B2B, NAND08GW3B2A DC and AC parameters

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11.1 Ready/Busy Signal Electrical Characteristics

Figure 34, Figure 33 and Figure 35 show the electrical characteristics for the Ready/Busy

signal. The value required for the resistor RP can be calculated using the following equation:

So,

where IL is the sum of the input currents of all the devices tied to the Ready/Busy signal. RP

max is determined by the maximum value of tr.

Figure 33. Ready/Busy AC Waveform

Figure 34. Ready/Busy Load Circuit

RPmin VDDmax VOLmax

–()

IOL IL

-------------------------------------------------------------=

RPmin 1,8V()

1,85V

3mA IL

---------------------------=

RPmin 3V() 3,2V

8mA IL

---------------------------=

AI07564B

busy

VOH

ready VDD

VOL

tftr

AI07563B

VDD

VSS

DEVICE

Open Drain Output

ibusy

DC and AC parameters NAND04GW3B2B, NAND08GW3B2A

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Figure 35. Resistor Value Versus Waveform Timings For Ready/Busy Signal

1. T = 25°C.

11.2 Data Protection

The Numonyx NAND device is designed to guarantee Data Protection during Power

Transitions.

A VDD detection circuit disables all NAND operations, if VDD is below the VLKO threshold.

In the VDD range from VLKO to the lower limit of nominal range, the WP pin should be kept

low (VIL) to guarantee hardware protection during power transitions as shown in the below

figure.

Figure 36. Data Protection

ai12476

tfibusy

RP (KΩ)

12 34

100

300

200

ibusy (mA)

2.4

1.2

0.8

0.6

100

200

300

400

3.6 3.6 3.6 3.6

400 4

VDD = 3.3V, CL = 100pF

tr, tf (ns)

Ai11086

VLKO

VDD

Nominal Range

Locked

NAND04GW3B2B, NAND08GW3B2A Package mechanical

55/58

12 Package mechanical

Figure 37. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20 mm, Package Outline

1. Drawing is not to scale.

TSOP-G

DIE

LA1 α

Table 22. TSOP48 - 48 lead Plastic Thin Small Outline, 12 x 20 mm, Package Mechanical Data

Symbol

millimeters inches

Typ Min Max Typ Min Max

A 1.200 0.0472

A1 0.100 0.050 0.150 0.0039 0.0020 0.0059

A2 1.000 0.950 1.050 0.0394 0.0374 0.0413

B 0.220 0.170 0.270 0.0087 0.0067 0.0106

C 0.100 0.210 0.0039 0.0083

CP 0.080 0.0031

D1 12.000 11.900 12.100 0.4724 0.4685 0.4764

E 20.000 19.800 20.200 0.7874 0.7795 0.7953

E1 18.400 18.300 18.500 0.7244 0.7205 0.7283

e 0.500 – – 0.0197 –

L 0.600 0.500 0.700 0.0236 0.0197 0.0276

L1 0.800 0.0315

a 3°0°5°3°0°5°

Part numbering NAND04GW3B2B, NAND08GW3B2A

56/58

13 Part numbering

Devices are shipped from the factory with the memory content bits, in valid blocks, erased to

’1’. For further information on any aspect of this device, please contact your nearest

Numonyx Sales Office.

Table 23. Ordering Information Scheme

Example: NAND04GW3B2B N 6 E

Device Type

NAND Flash Memory

Density

04G = 4Gb

08G = 8Gb

Operating Voltage

W = VDD = 2.7 to 3.6V

Bus Width

3 = x8

Family Identifier

B = 2112 Byte Page

Device Options

2 = Chip Enable Don't Care Enabled

Product Version

A = First Version (NAND08GW3B2A)

B= Second Version (NAND04GW3B2B)

Package

N = TSOP48 12 x 20mm (all devices)

Temperature Range

1 = 0 to 70 °C

6 = –40 to 85 °C

Option

E = Lead Free Package, Standard Packing

F = Lead Free Package, Tape & Reel Packing

NAND04GW3B2B, NAND08GW3B2A Revision history
 57/58
14 Revision history
         
Table 24. Document revision history
Date Revision Changes
14-Feb-2006 1.0 Initial release.
30-May-2006 2
NAND08GW3B2A added, and Table 1: Product Description, Table 3: 
Valid Blocks, Table 5: Address Insertion, Table 6: Address Definition, 
Table 9: Status Register Bits and Table 23: Ordering Information 
Scheme updated.
tBLBH4 timing added in Figure 7: Cache Read Operation. 
Table 8: Copy Back Program addresses added in Section 6.4: Copy 
Back Program.
Definition of Status Register bit SR6 updated in Table 8: Copy Back 
Program addresses.
tEHEL, tEHBL, tRHBL removed fromFigure 27: Page Read operation AC 
Waveform.
08-Feb-2007 3
Data integrity of 100,000 specified for ECC implemented. 
Note 2 removed below Table 7: Commands.
Note 1 added below Figure 7: Cache Read Operation. 
tWHBH2 changed into tBLBH5 in Section 6.5: Cache Program, and 
Note 3 added below Figure 12: Cache Program Operation.
Section 8.2: NAND Flash memory failure modes added in Section 8: 
Software algorithms.
tWHALL added in Table 20: AC Characteristics for Command, 
Address, Data Input. tWHBH1 removed from Table 21: AC 
Characteristics for operations.
tEHQX added in Figure 24: Sequential Data Output after Read AC 
waveforms. tRHQX added in Table 21: AC Characteristics for 
operations. 
Figure 27: Page Read operation AC Waveform updated for 
Ready/busy and tRHQX and tEHQX added.
Figure 28: Page Program AC waveform updated for CL and Chip 
Enable.
15-Feb-2007 4 Datasheet status upgraded to Full Datasheet.
10-Dec-2007 5 Applied Numonyx branding.

NAND04GW3B2B, NAND08GW3B2A

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