1Oct-27-1997
BSM 300 GA 120 DN2S
IGBT Power Module
• Single switch
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type VCE ICPackage Ordering Code
BSM 300 GA 120 DN2 1200V430ASINGLE SWITCH 1 C67076-A2007-A70
BSM 300 GA 120 DN2 S 1200V430ASSW SENSE 1 C67070-A2017-A70
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE 1200 V
Collector-gate voltage
RGE = 20 kΩVCGR 1200
Gate-emitter voltage VGE ± 20
DC collector current
TC = 25 °C
TC = 80 °C
IC
300
430 A
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
ICpuls
600
860
Power dissipation per IGBT
TC = 25 °C Ptot 2500 W
Chip temperature Tj+ 150 °C
Storage temperature Tstg -40 ... + 125
Thermal resistance, chip case RthJC ≤ 0.05 K/W
Diode thermal resistance, chip case RthJCD≤ 0.125
Insulation test voltage, t = 1min. Vis 2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 -F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56
2Oct-27-1997
BSM 300 GA 120 DN2S
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
VGE = VCE, IC = 12 mA VGE(th) 4.5 5.5 6.5 V
Collector-emitter saturation voltage
VGE = 15 V, IC = 300 A, Tj = 25 °C
VGE = 15 V, IC = 300 A, Tj = 125 °C
VCE(sat)
-
- 3.1
2.5 3.7
3
Zero gate voltage collector current
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
ICES
-
- 16
4 -
5.6 mA
Gate-emitter leakage current
VGE = 20 V, VCE = 0 V IGES - - 320 nA
AC Characteristics
Transconductance
VCE = 20 V, IC = 300 A gfs 124 --S
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz Ciss - 22 -nF
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz Coss - 3.3 -
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz Crss - 1.2 -
3Oct-27-1997
BSM 300 GA 120 DN2S
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
VCC = 600 V, VGE = 15 V, IC = 300 A
RGon = 3.3 Ω
td(on)
- 100 200
ns
Rise time
VCC = 600 V, VGE = 15 V, IC = 300 A
RGon = 3.3 Ω
tr
- 110 220
Turn-off delay time
VCC = 600 V, VGE = -15 V, IC = 300 A
RGoff = 3.3 Ω
td(off)
- 600 800
Fall time
VCC = 600 V, VGE = -15 V, IC = 300 A
RGoff = 3.3 Ω
tf
- 80 120
Free-Wheel Diode
Diode forward voltage
IF = 300 A, VGE = 0 V, Tj = 25 °C
IF = 300 A, VGE = 0 V, Tj = 125 °C
VF
-
- 1.8
2.3 -
2.8 V
Reverse recovery time
IF = 300 A, VR = -600 V, VGE = 0 V
diF/dt = -2500 A/µs, Tj = 125 °C
trr
- 0.55 -
µs
Reverse recovery charge
IF = 300 A, VR = -600 V, VGE = 0 V
diF/dt = -2500 A/µs
Tj = 25 °C
Tj = 125 °C
Qrr
-
- 40
14 -
-
µC
4Oct-27-1997
BSM 300 GA 120 DN2S
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
0 20 40 60 80 100 120 °C 160
TC
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
W
2600
Ptot
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
0
10
1
10
2
10
3
10
4
10
A
IC
10 0 10 1 10 2 10 3 V
VCE
DC
10 ms
1 ms
100 µs
tp = 19.0µs
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
0 20 40 60 80 100 120 °C 160
TC
0
50
100
150
200
250
300
350
400
A
500
IC
Transient thermal impedance IGBT
Zth JC = ƒ(tp)
parameter: D = tp / T
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
K/W
ZthJC
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
tp
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
5Oct-27-1997
BSM 300 GA 120 DN2S
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
0 1 2 3 V5
VCE
0
50
100
150
200
250
300
350
400
450
500
A
600
IC
17V
15V
13V
11V
9V
7V
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
0 1 2 3 V5
VCE
0
50
100
150
200
250
300
350
400
450
500
A
600
IC
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
0 2 4 6 8 10 V14
VGE
0
50
100
150
200
250
300
350
400
450
500
A
600
IC
6Oct-27-1997
BSM 300 GA 120 DN2S
Typ. gate charge
VGE = ƒ(QGate)
parameter: IC puls = 300 A
0 200 400 600 800 1000120014001600 nC 2000
QGate
0
2
4
6
8
10
12
14
16
V
20
VGE
800 V600 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
0 5 10 15 20 25 30 V40
VCE
-1
10
0
10
1
10
2
10
nF
C Ciss
Coss
Crss
Reverse biased safe operating area
ICpuls = f(VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tp ≤ 1 ms, L < 20 nH
0 200 400 600 800 1000 1200 V1600
VCE
0.0
0.5
1.0
1.5
2.5
ICpulsIC
di/dt = 1000A/µs
3000A/µs
5000A/µs
Short circuit safe operating area
ICsc = f(VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 20 nH
0 200 400 600 800 1000 1200 V1600
VCE
0
2
4
6
8
12
ICsc/IC
circuit: >1s
° time between short
short circuit: <1000
° allowed number of
di/dt = 1000A/µs
3000A/µs
5000A/µs
7Oct-27-1997
BSM 300 GA 120 DN2S
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 3.3 Ω
0 100 200 300 400 500 A700
IC
1
10
2
10
3
10
4
10
ns
t
tr
tdon
tdoff
tf
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, IC = 300 A
0 5 10 15 20 25 30 Ω40
RG
1
10
2
10
3
10
4
10
ns
t
tdon
tr
tdoff
tf
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 3.3 Ω
0 100 200 300 400 500 A700
IC
0
20
40
60
80
100
mWs
140
E Eon
Eoff
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600V, VGE = ± 15 V, IC = 300 A
0 5 10 15 20 25 30 Ω40
RG
0
20
40
60
80
100
mWs
140
E
Eon
Eoff
8Oct-27-1997
BSM 300 GA 120 DN2S
Forward characteristics of fast recovery
reverse diode IF = f(VF)
parameter: Tj
0.0 0.5 1.0 1.5 2.0 V3.0
VF
0
50
100
150
200
250
300
350
400
450
500
A
600
IF
Tj=25°C
=125°C
j
T
Transient thermal impedance Diode
Zth JC = ƒ(tp)
parameter: D = tp / T
-4
10
-3
10
-2
10
-1
10
0
10
K/W
ZthJC
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
tp
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
1Oct-27-1997
BSM 300 GA 120 DN2 S
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 420 g
9
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM300GA120DN2S
typ.
LsCE 20 nH
Modulinduktivität
stray inductance module
Anhang C-Serie
Appendix C-series
Gehäuse spezifische Werte
Housing specific values
Gehäusemaße C-Serie
Package outline C-series
Appendix C-series Appendix_C-Serie_BSM300GA120DN2.xls
2001-09-20
4
