2016-06-21
Rev 2.0 Page 1
BSS84PW
SIPMOS Small-Signal-Transistor
Features
·
P-Channel
·
Enhancement mode
·
Avalanche rated
·
Logic Level
·
d
v
/d
t
rated
Product Summary
Drain source voltage
V
DS -60 V
Drain-source on-state resistance
R
DS(on) 8
W
Continuous drain current
I
D-0.15 A
1
3
VSO05561
2
Pin 1
PIN 2 PIN 3
G
SD
Type
Package
Tape and Reel
BSS84PW
PG-SOT-323
H6327:3000pcs/r.
Marking
YBs
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Value
Unit
Continuous drain current
T
A
= 25 °C
I
D
-0.15
A
Pulsed drain current
T
A
= 25 °C
I
D puls
-0.6
Avalanche energy, single pulse
I
D
= -0.15 A ,
V
DD
= -25 V,
R
GS
= 25
W
E
AS
2.61
mJ
Avalanche energy, periodic limited by
T
jmax
E
AR
0.03
Reverse diode d
v
/d
t
I
S
= -0.15 A,
V
DS
= -48 V, d
i
/d
t
= 200 A/µs,
T
jmax
= 150 °C
d
v
/d
t
6
kV/µs
Gate source voltage
V
GS
±20 V
Power dissipation
T
A
= 25 °C
P
tot
0.3
W
Operating and storage temperature
T
j ,
T
stg
-55...+150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
ESD Class
JESF22-A114-HBM
Class 0
2016-06-21
Rev 2.0 Page 2
BSS84PW
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 3)
R
thJS - - 110 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
R
thJA
-
-
-
-
420
350
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
V
GS = 0 V,
I
D = -250 µA
V
(BR)DSS -60 - - V
Gate threshold voltage,
V
GS =
V
DS
I
D = -20 µA
V
GS(th) -1 -1.5 -2
Zero gate voltage drain current
V
DS = -60 V,
V
GS = 0 V,
T
j = 25 °C
V
DS = -60 V,
V
GS = 0 V,
T
j = 125 °C
I
DSS
-
-
-0.1
-10
-1
-100
µA
Gate-source leakage current
V
GS = -20 V,
V
DS = 0 V
I
GSS - -10 -100 nA
Drain-source on-state resistance
V
GS = -2.7 V,
I
D = -0.01 A
R
DS(on) - 10.5 25
W
Drain-source on-state resistance
V
GS = -4.5 V,
I
D = -0.12 A
R
DS(on) - 6.9 12
Drain-source on-state resistance
V
GS = -10 V,
I
D = -0.15 A
R
DS(on) - 4.6 8
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2016-06-21
Rev 2.0 Page 3
BSS84PW
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
£
2*
I
D*
R
DS(on)max ,
I
D=0.15A
0.08 0.16 - S
Input capacitance
C
iss
V
GS=0V,
V
DS=-25V,
f
=1MHz
- 15.3 19.1 pF
Output capacitance
C
oss - 5.8 7.3
Reverse transfer capacitance
C
rss - 3 3.8
Turn-on delay time
t
d(on)
V
DD=-30V,
V
GS=-4.5V,
I
D=-0.12A,
R
G=25
W
- 6.7 10 ns
Rise time
t
r- 16.2 24.3
Turn-off delay time
t
d(off) - 8.6 12.9
Fall time
t
f- 20.5 30.8
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD=-48V,
I
D=-0.15A - 0.25 0.38 nC
Gate to drain charge
Q
gd - 0.3 0.45
Gate charge total
Q
gV
DD=-48V,
I
D=-0.15A,
V
GS=0 to -10V
- 1 1.5
Gate plateau voltage
V
(plateau)
V
DD=-48V,
I
D=-0.15A - -3.4 - V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A=25°C - - -0.15 A
Inverse diode direct current,
pulsed
I
SM - - -0.6
Inverse diode forward voltage
V
SD
V
GS=0V,
I
F=-0.15A - -0.84 -1.12 V
Reverse recovery time
t
rr
V
R=-30V,
I
F=
l
S,
d
i
F/d
t
=100A/µs
- 23.6 35.4 ns
Reverse recovery charge
Q
rr - 11.6 17.4 nC
2016-06-21
Rev 2.0 Page 4
BSS84PW
Power Dissipation
P
tot =
f
(
T
A)
0 20 40 60 80 100 120 °C 160
T
A
0.00
0.04
0.08
0.12
0.16
0.20
0.24
W
0.32 BSS84PW
P
tot
Drain current
I
D =
f
(
T
A)
parameter:
V
GS
³
10 V
0 20 40 60 80 100 120 °C 160
T
A
0.00
-0.02
-0.04
-0.06
-0.08
-0.10
-0.12
A
-0.16 BSS84PW
I
D
Safe operating area
I
D =
f
(
V
DS )
parameter :
D
= 0 ,
T
A = 25 °C
-10 -1 -10 0 -10 1 -10 2
V
V
DS
-3
-10
-2
-10
-1
-10
0
-10
1
-10
A
BSS84PW
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 µs
t
p = 40.0µs
Transient thermal impedance
Z
thJA =
f
(
t
p)
parameter :
D
=
t
p/
T
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 3
s
t
p
0
10
1
10
2
10
3
10
K/W
BSS84PW
Z
thJC
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
2016-06-21
Rev 2.0 Page 5
BSS84PW
Typ. output characteristic
I
D =
f
(
V
DS);
T
j=25°C
parameter:
t
p = 80 µs
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V-5.0
V
DS
0.00
-0.04
-0.08
-0.12
-0.16
-0.20
-0.24
-0.28
A
-0.36 BSS84PW
I
D
V
GS [V]
a
a -2.5
b
b -3.0
c
c -3.5
dd -4.0
e
e -4.5
f
f -5.0
g
P
tot = 0W
g -6.0
Typ. drain-source-on-resistance
R
DS(on) =
f
(
I
D)
parameter:
V
GS
0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 A-0.30
I
D
0
2
4
6
8
10
12
14
16
18
20
22
W
26 BSS84PW
R
DS(on)
V
GS [V] =
a
a
-2.5
b
b
-3.0
c
c
-3.5
d
d
-4.0
e
e
-4.5
f
f
-5.0
g
g
-6.0
Typ. transfer characteristics
I
D=
f
(
V
GS )
V
DS
³
2 x
I
D x
R
DS(on)max
parameter:
t
p = 80 µs
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0
V
GS
0.00
-0.05
-0.10
-0.15
-0.20
A
-0.30
I
D
Typ. forward transconductance
g
fs = f(
I
D);
T
j=25°C
parameter:
g
fs
0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 A -0.40
I
D
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
S
0.22
g
fs
2016-06-21
Rev 2.0 Page 6
BSS84PW
Drain-source on-resistance
R
DS(on) = f(
T
j)
parameter:
I
D = -0.17A,
V
GS = -10 V
-60 -20 20 60 100 °C 160
T
j
0
2
4
6
8
10
12
W
16
R
DS(on)
max.
typ.
Gate threshold voltage
V
GS(th) =
f
(
T
j)
parameter:
V
GS =
V
DS,
I
D = -20 µA
-60 -20 20 60 100 °C 180
T
j
0.0
-0.5
-1.0
-1.5
V
-2.5
V
GS(th)
max.
min.
typ.
Typ. capacitances
C = f(VDS)
Parameter:
V
GS=0 V,
f
=1 MHz
0 -5 -10 -15 -20 V -30
V
DS
0
10
1
10
2
10
pF
C
C
iss
C
oss
C
rss
Forward characteristics of reverse diode
I
F =
f
(VSD)
parameter:
T
j , tp = 80 µs
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V-3.0
V
SD
-3
-10
-2
-10
-1
-10
0
-10
A
BSS84PW
I
F
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)
2016-06-21
Rev 2.0 Page 7
BSS84PW
Avalanche energy
E
AS =
f
(
T
j)
par.:
I
D = -0.15 A ,
V
DD = -25 V,
R
GS = 25
W
25 45 65 85 105 125 °C 165
T
j
0.0
0.5
1.0
1.5
2.0
mJ
3.0
E
AS
Typ. gate charge
V
GS =
f
(
Q
Gate)
parameter:
I
D = -0.15 A pulsed
0.0 0.2 0.4 0.6 0.8 1.0 1.2 nC 1.5
Q
Gate
0
-2
-4
-6
-8
-10
-12
V
-16 BSS84PW
V
GS
0,8
V
DS max
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS =
f
(
T
j)
-60 -20 20 60 100 °C 180
T
j
-54
-56
-58
-60
-62
-64
-66
-68
V
-72 BSS84PW
V
(BR)DSS
9
-60VSIPMOSSmallSignalTransistor
BSS84PW
Rev.2.0,2016-06-27
RevisionHistory
BSS84PW
Revision:2016-06-27,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2016-06-27 Release of final version
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
erratum@infineon.com
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2016InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.