High Voltage IGBT with Diode VCES IC25 VCE(sat) IXGP 20N120B IXGP 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Preliminary Data Sheet V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 40 A IC110 TC = 110C 20 A ICM TC = 25C, 1 ms 100 A SSOA (RBSOA) VGE = 15 V, TJ = 125C, RG = 10 Clamped inductive load ICM = 40 @0.8 VCES A PC TC = 25C 190 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C Md Mounting torque (M3.5 screw) TO-220 (IXGP) G G = Gate E = Emitter 300 C Maximum tab temperature soldering SMD devices for 10s 260 C 4 z z z z g z z z Test Conditions VGE(th) IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = 20 V VCE(sat) IC = 20A, VGE = 15 V Note 2 International standard package IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers MOS Gate turn-on - drive simplicity Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Saves space (two devices in one package) Easy to mount with 1 screw Reduces assembly time and cost Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. = 250 A, VCE = VGE (c) 2003 IXYS All rights reserved C = Collector TAB = Collector Advantages Weight Symbol C (TAB) Features 0.55/5 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s C E 2.5 20N120B 20N120BD1 TJ=125C 2.9 2.8 5.0 V 50 150 A A 100 nA 3.4 V V DS99138(12/03) IXGP 20N120B IXGP 20N120BD1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. IC = 20A; VCE = 10 V, Note 2. 18 S 1700 95 pF pF 20N120BD1 105 pF Cres 39 pF Qg 72 nC 12 nC 27 nC 25 ns 15 ns gfs 12 Cies 20N120B Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Qge IC = 20A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25C IC = 20 A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 10 Note 1. Inductive load, TJ = 125C IC = 20A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 10 Note 1 RthJC RthCK Reverse Diode (FRED) Symbol Test Conditions 150 280 ns 160 2.1 320 n s 3.5 mJ 25 ns 18 ns 1.4 mJ 270 ns 360 3.5 ns mJ 0.25 0.65 K/W K/W Pins: 1 - Gate 3 - Emitter 2 - Collector 4 - Collector Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. VF IF = 10 A, VGE = 0 V 3.3 V IF TC = 90C 10 A IRM t rr IF = 10 A; -diF/dt = 400 A/s, VR = 600 V VGE = 0 V; TJ = 125C t rr IF = 1 A; -diF/dt = 100 A/s; VR = 30 V, VGE = 0 V 14 120 A ns 40 ns 2.5 K/W RthJC Notes: TO-220 Outline 1. 2. Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG. Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGP 20N120B IXGP 20N120BD1 Fig. 1. Output Characte ris tics @ 25 Deg. C 40 160 VGE = 15V 13V 11V 9V 30 VGE = 15V 140 13V 120 I C - Amperes 35 I C - Amperes Fig. 2. Extended Output Characte ris tics @ 25 deg. C 25 20 7V 15 11V 100 80 9V 60 10 40 5 20 7V 5V 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 2 4 6 8 Fig. 3. Output Characteristics @ 125 Deg. C 12 14 16 18 20 Fig. 4. Dependence of V CE(sat) on Tem pe rature 40 1.5 VGE = 15V 13V 11V 9V 30 VGE = 15V 1.4 V C E (sat)- Normalized 35 I C - Amperes 10 V C E - Volts V C E - Volts 25 20 7V 15 10 I C = 40A 1.3 1.2 1.1 I C = 20A 1.0 0.9 I C = 10A 5 0.8 5V 0 0.7 0.5 1 1.5 2 2.5 3 3.5 4 -50 4.5 -25 0 V CE - Volts Fig. 5. Colle ctor-to-Em itter Voltage vs. Gate-to-Em iite r voltage 50 75 100 125 Fig. 6. Input Adm ittance 60 6.5 TJ = 25C 6 50 5.5 5 I C = 40A 20A 10A 4.5 4 I C - Amperes VC E - Volts 25 TJ - Degrees Centigrade 3.5 3 2.5 40 30 20 TJ = 125C 25C -40C 10 2 0 1.5 6 7 8 9 10 11 12 13 V G E - Volts (c) 2003 IXYS All rights reserved 14 15 16 17 4 5 6 7 V G E - Volts 8 9 150 IXGP 20N120B IXGP 20N120BD1 Fig. 8. Dependence of Turn-off Ene rgy Loss on RG Fig. 7. Trans conductance 24 16 21 12 E off - milliJoules g f s - Siemens 18 TJ = 125C VGE = 15V VCE = 960V 14 TJ = -40C 25C 125C 15 12 9 10 8 I C = 20A 6 6 4 3 2 0 I C = 40A I C = 10A 0 0 10 20 30 40 50 60 10 30 50 70 I C - Amperes Fig. 9. Dependence of Turn-Off Ene rgy Loss on Ic 110 130 150 Fig. 10. De pende nce of Turn-off Ene rgy Loss on Tem pe rature 14 14 R G = 10 R G = 100 - - VGE = 15V VCE = 960V TJ = 125C 10 8 TJ = 125C 6 R G = 10 R G = 100 - - VGE = 15V VCE = 960V 12 E off - milliJoules 12 E off - MilliJoules 90 R G - Ohms 4 10 I C = 40A 8 6 I C = 20A 4 TJ = 25C 2 2 0 0 I C = 10A 10 15 20 25 I C - Amperes 30 35 25 40 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-off Sw itching Tim e on RG Fig. 12. Depe ndence of Turn-off Sw itching Tim e on Ic 550 1400 td(off) tfi - - - - - - 1200 Switching Time - nanoseconds Switching Time - nanoseconds 35 TJ = 125C VGE = 15V VCE = 960V 1000 800 I C = 10A I C = 40A 600 400 I C = 20A 200 10 30 50 70 td(off) tfi - - - - - - 500 R G = 10 VGE = 15V VCE = 960V 450 400 TJ = 125C 350 300 250 TJ = 25C 200 90 R G - Ohms 110 130 150 10 15 20 25 30 35 40 I C - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGP 20N120B IXGP 20N120BD1 1.4 T = 100C nC VJ V = 300V 1.2 R 30 A 25 IF TVJ=150C TVJ=100C TVJ= 25C 20 15 Qr 1.0 40 TVJ= 100C A VR = 300V IRM IF= 20A IF= 10A IF= 5A 0.8 30 IF= 20A IF= 10A IF= 5A 20 0.6 10 0.4 5 10 0.2 0 0.0 0.5 1.0 0.0 100 2.0 V 2.5 1.5 A/s 1000 -diF/dt VF Fig. 13. Forward current IF versus VF Fig. 14. Reverse recovery charge Qr versus -diF/dt 120 2.0 trr 1.5 Kf 1.0 80 0.5 40 80 120 C 160 0 200 TVJ 400 0.9 10 0.6 5 0.3 TVJ= 100C IF = 10A 600 800 1000 A/s 0 0 200 400 -diF/dt Fig. 16. Dynamic parameters Qr, IRM versus TVJ s VFR tfr 70 0 600 A/s 800 1000 -diF/dt 1.2 Qr 0.0 400 tfr IF= 20A IF= 10A IF= 5A 90 IRM 200 Fig. 15. Peak reverse current IRM versus -diF/dt V VFR 15 110 100 0 20 TVJ= 100C VR = 300V ns 0 Fig. 17. Recovery time trr versus -diF/dt 10 K/W 0.0 600 A/s 800 1000 diF/dt Fig. 18 Peak forward voltage VFR and tf versus diF/dt Constants for ZthJC calculation: i 1 1 2 3 ZthJC Rthi (K/W) ti (s) 1.449 0.5578 0.4931 0.0052 0.0003 0.0169 0.1 0.01 0.001 0.00001 DSEP 8-06A/DSEC16-06A 0.0001 0.001 0.01 0.1 t s 1 NOTE: Fig. 2 to Fig. 6 shows typical values (c) 2003 IXYS All rights reserved 914 Fig. 19. Transient thermal resistance junction to case