DS30104 Rev. 6 - 2 1 of 3 MMBF170
www.diodes.com ã Diodes Incorporated
MMBF170
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·Low On-Resistance
·Low Gate Threshold Voltage
·Low Input Capacitance
·Fast Switching Speed
·Low Input/Output Leakage
·Available in Lead Free/RoHS Compliant Version (Note 2)
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic Symbol MMBF170 Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS £ 1.0MWVDGR 60 V
Gate-Source Voltage Continuous
Pulsed VGSS ±20
±40 V
Drain Current (Note 1) Continuous
Pulsed ID500
800 mA
Total Power Dissipation (Note 1) Pd300
1.80
mW
mW/°C
Thermal Resistance, Junction to Ambient RqJA 417 K/W
Operating and Storage Temperature Range Tj,T
STG -55 to +150 °C
·Case: SOT-23
·Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
·Moisture Sensitivity: Level 1 per J-STD-020C
·Terminals: Solderable per MIL-STD-202, Method 208
·Terminal Connections: See Diagram
·Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 6, on Page 2.
·Marking: (See Page 2) K6Z
·Ordering & Date Code Information: See Page 2
·Weight: 0.008 grams (approximate)
Mechanical Data
A
E
JL
TOP VIEW
M
BC
H
G
D
K
D
GS
SOT-23
Dim Min Max
A0.37 0.51
B1.20 1.40
C2.30 2.50
D0.89 1.03
E0.45 0.60
G1.78 2.05
H2.80 3.00
J0.013 0.10
K0.903 1.10
L0.45 0.61
M0.085 0.180
a0°8°
All Dimensions in mm
Note: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
Source
Gate
ra
n