1
MRF15030MOTOROLA RF DEVICE DATA
The RF Line
Designed for 26 volts microwave large–signal, common emitter, class A and
class AB linear amplifier applications in industrial and commercial FM/AM
equipment operating in the range 1400–1600 MHz.
•Specified 26 Volts, 1490 MHz, Class AB Characteristics:
Output Power — 30 Watts
Gain — 9 dB Min @ 30 Watts (PEP)
Efficiency — 30% Min @ 30 Watts (PEP)
Intermodulation Distortion — –30 dBc Max @ 30 Watts (PEP)
•Third Order Intercept Point — 53.5 dBm Typ @ 1490 MHz,
VCE = 24 Vdc, IC = 2.5 Adc
•Characterized with Series Equivalent Large–Signal Parameters from
1400–1600 MHz
•Characterized with Small Signal S–Parameters from 1000–2000 MHz
•Silicon Nitride Passivated
•100% Tested for Load Mismatch Stress at all Phase Angles with
3:1 Load VSWR @ 28 Vdc, at Rated Output Power
•Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
•Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 25 Vdc
Collector–Emitter V oltage VCES 60 Vdc
Emitter–Base Voltage VEBO 4Vdc
Collector–Current — Continuous IC10 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD125
0.71 Watts
W/°C
Storage Temperature Range Tstg –65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.40 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0) V(BR)CEO 25 29 — Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0) V(BR)CES 60 64 — Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, RBE = 100 Ω)V(BR)CER 30 52 — Vdc
(continued)
Order this document
by MRF15030/D
SEMICONDUCTOR TECHNICAL DATA
30 W, 1.5 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 395C–01, STYLE 1
Motorola, Inc. 1994
REV 7
MRF15030
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS — continued
Emitter–Base Breakdown Voltage
(IE = 5 mAdc, IC = 0) V(BR)EBO 4 5 — Vdc
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0) ICES — — 10 mAdc
ON CHARACTERISTICS
DC Current Gain
(ICE = 1 Adc, VCE = 5 Vdc) hFE 20 35 80 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 Vdc, IE = 0, f = 1 MHz) Cob —38 — pF
FUNCTIONAL TESTS (Figure 12)
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
Gpe 9.0 9.6 — dB
Collector Efficiency
(VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
η30 34 — %
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
IMD — –34 –30 dBc
Input Return Loss
(VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
IRL 12 15 — dB
Load Mismatch
(VCC = 28 Vdc, Pout = 30 W (PEP), ICQ = 125 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz, Load VSWR = 3:1, All Phase
Angles at Frequency of Test)
ψ
No Degradation in Output Power
Gpe
VCC = 26 Vdc
ICQ = 125 mA
f = 1490 MHz Single Tone
Pout
1.5 W
2.5 W
VCC = 26 Vdc
ICQ = 125 mA
Single Tone
Pin = 3.5 W
TYPICAL CHARACTERISTICS
012 453
45
40
35
30
25
0
15
20
Pin, INPUT POWER (WATTS)
out
P , OUTPUT POWER (WATTS)
Figure 1. Output Power & Power Gain versus Input Power
40
30
20
10
0
5
1400 1440 1520 1560 16001480
f, FREQUENCY (MHz)
out
P , OUTPUT POWER (WATTS)
Figure 2. Output Power versus Frequency
5
10
10.3
10.2
10.1
10.0
9.9
9.4
9.7
9.8
9.5
9.6
35
25
15
1420 1460 1540 15801500
pe
G , GAIN (dB)
3
MRF15030MOTOROLA RF DEVICE DATA
IMD, INTERMODULA TION DISTOR TION (dBc)
IMD, INTERMODULA TION DISTOR TION (dBc)
Third Order VCC = 24 Vdc
IC = 2.5 A
f1 = 1490 MHz
f2 = 1490.1 MHz
Fundamental
IMD
Pout = 30 W (PEP)
ICQ = 125 mA
f1 = 1490 MHz
f2 = 1490.1 MHz
Gain
75 mA
125 mA
250 mA
ICQ = 400 mA
VCC = 26 Vdc
f1 = 1490 MHz
f2 = 1490.1 MHz
ICQ = 75 mA
125 mA
250 mA
400 mA
η
VSWR
VCC = 26 Vdc
Pout = 30 W (PEP)
ICQ = 125 mA
VCC = 26 Vdc
ICQ = 125 mA
f1 = 1490 MHz
f2 = 1490.1 MHz
7th
5th
3rd Order
TYPICAL CHARACTERISTICS
0 5 15 35 4025
–20
–30
–60
–50
–40
P
out, OUTPUT POWER (W ATTS) PEP
IMD, INTERMODULA TION DISTOR TION (dBc)
Figure 3. Intermodulation Distortion
versus Output Power
f, FREQUENCY (MHz)
pe
G
Figure 4. Performance in Broadband Circuit
18 20 22 24 26 28
11
10.5
10
9.5
8
9
8.5
VCE, COLLECTOR VOLTAGE (Vdc)
–25
–35
100
0.01 0.10 1.0 10
–25
–30
–35
–55
–50
–40
–45
P
out, OUTPUT POWER (W ATTS) PEP Pout, OUTPUT POWER (W ATTS) PEP
9
8
4
6
7
5
10
–40
–30
0
–20
10
40
20
50
10 15 20 3025 35 40 5045
Pin, INPUT POWER (dBm)
10 20 30
, POWER GAIN (dB)
–30
–40
60
–10
30
60
40
20
0
0
1
4
2
5
8
6
9
12
1450 1460 1470 14901480 1500 1510 15301520
50
30
10
11
10
3
7
100
0.01 0.10 1.0 10
pe
G , POWER GAIN (dB)
pe
G , POWER GAIN (dB)
out
P , OUTPUT POWER (dBm)
1.00
1.25
1.50
1.75
INPUT VSWR
η
, COLLECTOR
EFFICIENCY (%)
Gpe
VCC = 26 Vdc
f1 = 1490 MHz
f2 = 1490.1 MHz
Figure 5. Intermodulation Distortion
versus Output Power Figure 6. Power Gain versus Output Power
Figure 7. Power Gain and Intermodulation
Distortion versus Collector Voltage Figure 8. Class A Third Order Intercept Point
MRF15030
4MOTOROLA RF DEVICE DATA
TJ = 175
°
C
Tflange = 100
°
C
Tflange = 75
°
C
TYPICAL CHARACTERISTICS
04 8 20 2812
3
2.5
0
1.5
2
VCE, COLLECTOR VOLTAGE (Vdc)
C
I
Figure 9. DC Safe Operating Area
109
100 140 220 260180
TJ, JUNCTION TEMPERATURE (
°
C)
2
MTBF FACTOR (HOURS x AMPS )
Figure 10. MTBF Factor versus
Junction Temperature
0.5
1
120 160 240200
2416
, COLLECTOR CURRENT (Adc)
108
107
106
105
104
The above graph displays calculated MTBF in hours x ampere2
emitter current. Life tests at elevated temperatures have correlated
to better than ±10% of the theoretical prediction for metal failure.
Divide MTBF Factor by IC2 for MTBF in a particular application.
Figure 11. Input and Output Impedances with Circuit Tuned for Maximum Gain @ Pout = 30 Watts (PEP),
VCC = 26 Volts, ICQ = 125 mA, and Driven by Two Equal Amplitude Tones with Separation of 100 KHz
f
(GHz) Zin
(Ω)Z*OL
(Ω)
1.40
1.45
1.50
1.55
1.15 + j4.25
1.20 + j4.80
1.15 + j4.55
1.45 + j5.15
1.87 + j0.78
1.67 + j0.78
1.47 + j0.78
1.27 + j0.78
1.60 1.89 + j5.25 1.00 + j0.78
Z*OL = Conjugate of optimum load impedance into
which the device operates at a given output
power, voltage and frequency.
Breakdown Limited
MTBF Limited
Zin
ZOL*
f = 1.6 GHz
1.4
1.55
1.45
1.5
Zo = 10
Ω
f = 1.6 GHz
1.55
1.5 1.4
1.45
5
MRF15030MOTOROLA RF DEVICE DATA
Table 1. Small Signal S Parameters at VCE = 24 Vdc, IC = 2.5 Adc
f S11 S21 S12 S22
MHz |S11|∠φ|S21|∠φ|S12|∠φ|S22|∠φ
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
0.983
0.984
0.978
0.975
0.975
0.969
0.963
0.955
0.945
0.933
0.915
0.889
0.856
0.833
0.820
0.839
0.872
0.909
0.937
0.957
0.970
173
172
172
171
171
170
169
169
168
167
166
166
166
168
171
174
175
176
175
174
173
0.366
0.367
0.367
0.373
0.382
0.391
0.408
0.428
0.452
0.487
0.525
0.572
0.618
0.654
0.654
0.600
0.517
0.435
0.357
0.296
0.247
49
46
43
40
36
33
29
25
20
13
6
–3
–16
–30
–48
–66
–81
–94
–104
–112
–119
0.006
0.007
0.007
0.007
0.008
0.007
0.008
0.009
0.008
0.009
0.009
0.009
0.009
0.010
0.010
0.010
0.010
0.010
0.011
0.012
0.012
36
33
33
30
31
27
21
20
7
1
–8
–18
–35
–54
–86
–120
–152
–176
159
148
136
0.890
0.893
0.888
0.885
0.886
0.881
0.879
0.879
0.873
0.875
0.875
0.877
0.887
0.901
0.918
0.930
0.932
0.925
0.924
0.917
0.915
178
178
178
178
177
177
177
177
177
178
178
178
178
178
178
177
176
174
173
173
173
N1
RF Input
Figure 12. Class AB Broadband Test Fixture Electrical Schematic
B1, B4 Long Bead, Fair Rite
B2, B3 Short Bead, Fair Rite
C1 0.3 pF, B Case Chip Capacitor, ATC
C2 220 µF, Electrolytic Capacitor, Mallory
C3, C14 0.1 µF, Chip Capacitor, Kemit
C4, C8 0.8 to 8 pF, Variable Capacitor, Johanson
C5, C11 1800 pF, Chip Capacitor, Kemit
C6, C12 18 pF, B Case Chip Capacitor, ATC
C7, C10 51 pF, Chip Capacitor, Murata Erie
C9 1.7 pF, B Case Chip Capacitor, ATC
C13 470 µF, Electrolytic Capacitor, Mallory
D1 Surface Mount Diode, Motorola
D2 Light Emitting Diode, Industrial Devices
L1, L2 3 T urn, 20 AWG, 0.126″ ID Choke
N1, N2 Type N Flange Mount RF Connector, Omni Spectra
Q1 T ransistor PNP Motorola (BD136)
Q2, Q3 Surface Mount Transistor, NPN, Motorola (MJD47)
R1 2 x 330 Ω, 1/8 Watt Chip Resistors in Parallel, Rohm
R2 100 Ω, 1/8 Watt, Chip Resistor, Rohm
R3, R6 4 x 38 Ω, 1/8 Watt, Chip Resistors in Parallel, Rohm
R4 39 Ω, 1/8 Watt, Chip Resistor, Rohm
R5 22 KΩ, 1/8 Watt, Chip Resistor, Rohm
Board Glass Teflon, Arlon GX–0300–55–22, εr = 2.55
N2
RF Output
VCC
R6
B4
C14C13
C11
C12
C9
C8
L2
B3
C10
DUT
R5
D2
Q3
R4
C7
C6
C4
C1
+
Q2
B2
L1
C5
B1
R3
R2
C3
C2
Q1
D1
R1
Vbias
+
MRF15030
6MOTOROLA RF DEVICE DATA
Figure 13. Class A Test Fixture Electrical Schematic
B1, B4 Long Bead, Fair Rite
B2, B3 Short Bead, Fair Rite
C1, C2 100 µF, Electrolytic Capacitor, Mallory
C3, C14 0.1 µF, Chip Capacitor, Kemit
C4 1.3 pF, B Case Chip Capacitor, ATC
C5, C12 18 pF, B Case Chip Capacitor, ATC
C6, C11 1800 pF, Chip Capacitor, Kemit
C7, C9 0.8 to 8 pF, Variable Capacitor, Johanson
C8, C10 51 pF, Chip Capacitor, Murata Erie
C13 470 µF, Electrolytic Capacitor, Mallory
L1, L2 3 T urn, 20 AWG, 0.126″ ID Choke
N1, N2 Type N Flange Mount RF Connector, Omni Spectra
Q1 T ransistor NPN Motorola (BD135)
Q2 T ransistor PNP Motorola (BD136)
R1 250 Ω, 1/8 Watt, Chip Resistor Rohm
R2 500 Ω, 1/4 W att Potentiometer, State of the Art
R3 4.7 KΩ, 1/8 Watt, Chip Resistor, Rohm
R4 2 x 4.7 KΩ, 1/8 Watt, Chip Resistors in Parallel, Rohm
R5 1.0 Ω, 10 Watt, Resistor, Dale
R6 38 Ω, 1.0 Watt, Resistor
R7 75 Ω, 1/8 Watt, Chip Resistor, Rohm
R8 2 x 10 Ω, 1/8 Watt, Chip Resistors in Parallel, Rohm
R9, R10 4 x 38 Ω, 1/8 W att, Chip Resistors in Parallel, Rohm
Board Glass Teflon, Arlon GX–0300–55–22, εr = 2.55
C7
R2
R3 R4 R7 R8
Q2
Q1
R5
N2
RF Output
VCC
R10
B4 C14
C13
C11
C12
C9
L2
B3
C10
DUT
C8
C5
C4
R1
B2
L1
C6
B1
R9
C3
C2
N1
RF Input
R6
VCC
C1
V Supply +
++
7
MRF15030MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 395C–01
ISSUE A
U
D
K
N
J
H
E
C
DIM
AMIN MAX MIN MAX
MILLIMETERS
0.739 0.750 18.77 19.05
INCHES
B0.240 0.260 6.10 6.60
C0.165 0.198 4.19 5.03
D0.215 0.225 5.46 5.72
E0.055 0.070 1.40 1.78
H0.079 0.091 2.01 2.31
J0.004 0.006 0.10 0.15
K0.210 0.240 5.33 6.10
N0.315 0.330 8.00 8.38
Q0.125 0.135 3.18 3.42
U0.560 BSC 14.23 BSC
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
–T–
1
2
3
–A–
–B–
2 PLQ
M
A
M
0.51 (0.020) B M
T
MRF15030
8MOTOROLA RF DEVICE DATA
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does
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MRF15030/D
*MRF15030/D*
◊
