Advance Technical Information IXTK 110N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 110 A = 26 m RDS(on) N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C; RGS = 1.0 M 300 V VGS Continuous 20 V VGSM Transient 30 V ID25 ID(RMS) IDM IAR TC = 25C MOSFET chip capability External lead current limit TC = 25C, pulse width limited by TJM TC = 25C 110 75 440 90 A A A A EAR EAS TC = 25C TC = 25C 80 4.0 mJ J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 5 V/ns PD TC 730 W TJ -55 ... +150 C TJM Tstg 150 -55 ... +150 C C 300 C = 25C TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 0.7/6 Nm/lb.in. 10 g TO-264 AA (IXTK) D (TAB) G D S G = Gate S = Source D = Drain Tab = Drain Features *Low RDS (on) HDMOSTM process *Rugged polysilicon gate cell structure *International standard package *Fast switching times Applications Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 1 mA VGS(th) V DS = VGS, ID = 250 A IGSS V GS = 20 V DC, VDS = 0 IDSS V DS = VDSS V GS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 ms, duty cycle d 2% (c) 2003 IXYS All rights reserved 300 2.0 TJ = 25C TJ = 125C V 4.0 V 200 nA 50 A 3 mA * Motor controls * DC choppers * Switched-mode power supplies Advantages * Easy to mount with one screw (isolated mounting screw hole) * Space savings * High power density 26 m DS99013(03/03) IXTK 110N30 Symbol Test Conditions (T J = 25C unless otherwise specified) gfs Characteristic values Min. Typ. Max. VDS = 10 V; ID = 0.5 ID25, pulse test Ciss 101 S 7800 pF 1700 pF C rss 600 pF td(on) 30 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 85 tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 td(off) RG = 1.0 (External) tf ns ns 30 ns 390 Qg(on) Qgs 40 110 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd nC 60 nC 180 nC 0.17 K/W RthJC RthCK 0.15 Source-Drain Diode K/W TO-264 AA Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Ratings and Characteristics (TJ = 25C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 110 A ISM Repetitive; pulse width limited by TJM 440 A VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.5 V t rr IF = 25A, -di/dt = 100 A/s, VR = 100V Qrr 350 ns 4 C IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTK 110N30 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Output Characteristics @ 125 Deg. C 120 150 VGS = 10V 9V 8V 7V 100 6V 75 50 5V 80 40 20 0 0 1 2 3 4 V DS - Volts 5V 60 25 0 VGS = 10V 9V 8V 7V 6V 100 ID - Amperes ID - Amperes 125 0 5 1.5 3 Fig. 3. RDS(on) Normalized to ID25 Value vs. Junction Temperature 7.5 9 Value vs. ID 3 VGS = 10V 2.5 VGS = 10V 2.6 RDS(on) - Normalized RDS(on) - Normalized 6 Fig. 4. RDS(on) Normalized to I D25 3 2 ID = 110A 1.5 ID = 55A 1 T J = 125C 2.2 1.8 1.4 1 0.5 T J = 25C 0.6 -50 -25 0 25 50 75 100 125 150 0 30 TJ - Degrees Centigrade 60 90 120 150 180 210 6 6.5 ID - Amperes Fig. 5. Drain Current vs. Case Fig. 6. Input Admittance T emperature 120 175 100 150 80 ID - Amperes ID - Amperes 4.5 V DS - Volts 60 40 125 100 T J = -40C 25C 125C 75 50 20 25 0 0 -50 -25 0 25 50 75 100 TC - Degrees Centigrade (c) 2003 IXYS All rights reserved 125 150 3.5 4 4.5 5 5.5 V GS - Volts IXTK 110N30 Fig. 8. Source Current vs. Source-To-Drain Voltage Fig. 7. T ransconductance 180 200 T J = -40C 25C 125C 160 140 175 150 IS - Amperes Gfs - Siemens 120 100 80 60 125 100 75 40 50 20 25 0 T J = 125C T J = 25C 0 0 30 60 90 120 150 180 210 0.4 0.5 0.6 ID - Amperes Fig. 9. Gate Charge 0.8 0.9 1 1.1 1.2 Fig. 10. Capacitance 10000 10 VDS = 150V ID = 60A IG = 10mA C iss Capacitance - pF 8 VGS - Volts 0.7 V SD - Volts 6 4 f = 1M Hz C oss 1000 C rss 2 100 0 0 80 160 240 320 400 QG - nanoCoulombs R(th)JC - (C/W) 1 0 5 10 15 20 25 V DS - Volts 30 35 40 Fig. 11. Maximum Transient Thermal Resistance 0.1 0.01 1 10 100 Pulse Width - milliseconds 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343