IXTK110N30 - IXYS Corporation

Advance Technical Information

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

VDSS VGS = 0 V, ID = 1 mA 300 V

VGS(th) VDS = VGS, ID = 250 µA 2.0 4.0 V

IGSS VGS = ±20 V DC, VDS = 0 ±200 nA

IDSS VDS = VDSS TJ = 25°C 50 µA

VGS = 0 V TJ = 125°C 3 mA

RDS(on) VGS = 10 V, ID = 0.5 ID25 26 mΩ

Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%

Features

•Low RDS (on) HDMOSTM process

•Rugged polysilicon gate cell structure

•International standard package

•Fast switching times

Applications

•Motor controls

•DC choppers

•Switched-mode power supplies

Advantages

•Easy to mount with one screw

(isolated mounting screw hole)

•Space savings

•High power density

DS99013(03/03)

High Current

MegaMOSTMFET

N-Channel Enhancement Mode

Symbol Test conditions Maximum ratings

VDSS TJ= 25°C to 150°C 3 00 V

VDGR TJ= 25°C to 150°C; RGS = 1.0 MΩ300 V

VGS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC= 25 °C MOSFET chip capability 1 10 A

ID(RMS) External lead current limit 75 A

IDM TC= 25°C, pulse width limited by TJM 440 A

IAR TC= 25°C90A

EAR TC= 25°C80mJ

EAS TC= 25°C 4.0 J

dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 5 V/ns

TJ≤ 150°C, RG = 2 Ω

PDTC= 25°C 730 W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6 mm (0.063 in.) from case for 10 s 300 °C

MdMounting torque 0.7/6 Nm/lb.in.

Weight TO-264 10 g

TO-264 AA (IXTK)

S

GD

D (TAB)

G = Gate D = Drain

S = Source Tab = Drain

IXTK 110N30 VDSS = 300 V

ID25 =110 A

RDS(on) = 26m

ΩΩ

Ω

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

Symbol Test Conditions Characteristic values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

gfs VDS = 10 V; I D = 0.5 ID25, pulse test 85 101 S

Ciss 7800 pF

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1700 pF

Crss 600 pF

td(on) 30 ns

trVGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 I D25 40 ns

td(off) RG = 1.0 Ω (External) 1 1 0 ns

tf30 ns

Qg(on) 390 nC

Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 60 nC

Qgd 180 nC

RthJC 0.17 K/W

RthCK 0.15 K/W

Source-Drain Diode Ratings and Characteristics

(TJ = 25°C unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

ISVGS = 0V 110 A

ISM Repetitive; pulse width limited by TJM 440 A

VSD IF = IS, VGS = 0 V, 1.5 V

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

trr IF = 25A, -di/dt = 100 A/µs, VR = 100V 350 ns

Qrr 4µC

IXTK 110N30

TO-264 AA Outline

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

IXTK 110N30

Fig. 2. Output Characteristics

@ 125 Deg. C

0

20

40

60

80

10 0

12 0

0 1.5 3 4.5 6 7.5 9

V

DS

- Volts

I

D

- Amperes

VGS = 1 0V

9V

8V

7V

6V

5V

Fig. 1. Output Characteristics

@ 25 Deg. C

0

25

50

75

10 0

12 5

15 0

0 123 45

V

DS

- Volts

I

D

- Amperes

VGS = 1 0V

9V

8V

7V

5V

6V

Fig. 3. R

DS(on)

Normalized to I

D25

Value vs.

Junction T emperature

0.5

1

1. 5

2

2.5

3

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalize

d

ID = 1 1 0 A

ID = 55A

VGS = 1 0V

Fig. 6. Input Admittance

0

25

50

75

10 0

12 5

15 0

17 5

3.5 4 4.5 5 5.5 6 6.5

V

GS

- Volts

I

D

- Amperes

TJ

= -40ºC

25ºC

1 25ºC

Fig. 5. Drain Current vs. Case

T emperature

0

20

40

60

80

10 0

12 0

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

Fig. 4. R

DS(on)

Normalized to I

D25

Value vs. I

D

0.6

1

1. 4

1. 8

2.2

2.6

3

0 30 60 90 120 150 180 210

I

D

- Amperes

R

DS(on)

- Normalize

d

TJ = 1 25ºC

TJ = 25ºC

VGS = 1 0V

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343

IXTK 110N30

Fig. 10. Capacitance

10 0

10 0 0

10000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - p

F

C

iss

C

oss

C

rss

f = 1 MHz

Fig. 9. Gate Charge

0

2

4

6

8

10

0 80 160 240 320 400

Q

G

- nanoCoulombs

V

GS

- Volts

V

DS

= 1 50V

I

D

= 60A

I

G

= 1 0mA

Fig. 11. Maximum Transient T hermal

Resistance

0.01

0.1

1

1 10 100 1000

Pulse Width - milliseconds

R

(th)JC

-

(ºC/W)

Fig. 7. Transconductance

0

20

40

60

80

10 0

12 0

14 0

16 0

18 0

0 306090120150180210

I

D

- Amperes

G

fs

- Siemens

T

J

= -40ºC

25ºC

1 25ºC

Fig. 8. Source Current vs. Source-To-Drain

Voltage

0

25

50

75

10 0

12 5

15 0

17 5

200

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2

V

SD

- Volts

I

S

- Amperes

T

J

= 1 25ºC

T

J

= 25ºC