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FDPF085N10A N-Channel PowerTrench(R) MOSFET 100 V, 40 A, 8.5 m Features Description * RDS(on) = 6.5 m (Typ.) @ VGS = 10 V, ID = 40 A This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench(R) process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. * Fast Switching Speed * Low Gate Charge, QG = 31 nC (Typ.) * High Performance Trench Technology for Extremely Low RDS(on) Applications * High Power and Current Handling Capability * Consumer Appliances * RoHS Compliant * LED TV * Synchronous Rectification for ATX / Sever / Telecom PSU * Motor Drives and Uninterruptible Power Supplies * Micro Solar Inverter D G D S G TO-220F S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt - Continuous (TC = 25oC) 20 V A 28 (Note 1) 160 A (Note 2) 269 mJ 6.0 V/ns (Note 3) (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds TL Unit V 40 - Continuous (TC = 100oC) - Pulsed FDPF085N10A 100 - Derate Above 25oC 33.3 W 0.22 W/oC -55 to +175 oC 300 oC FDPF085N10A Unit Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction to Case, Max. 4.5 RJA Thermal Resistance, Junction to Ambient, Max. 62.5 (c)2011 Fairchild Semiconductor Corporation FDPF085N10A Rev. C1 1 o C/W www.fairchildsemi.com FDPF085N10A -- N-Channel PowerTrench(R) MOSFET November 2013 Part Number FDPF085N10A Top Mark FDPF085N10A Package TO-220F Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 100 - - V - 0.07 - V/oC Off Characteristics BVDSS BVDSS / TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 A, VGS = 0 V ID = 250 A, Referenced to 25oC VDS = 80 V, VGS = 0 V - - 1 VDS = 80 V, TC = 150oC - - 500 VGS = 20 V, VDS = 0 V - - 100 2.0 - 4.0 V - 6.5 8.5 m - 76 - S - 2025 2695 pF - 468 620 pF - 20 - pF - 752 - pF - 31 40 nC - 9.7 - nC - 5.0 - nC - 7.5 - nC - 0.97 - - 18 46 ns - 22 54 ns - 29 68 ns - 8 26 ns A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 A Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 96 A VDS = 10 V, ID = 96 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Engry Related Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshoid to Plateau Qgd Gate to Drain "Miller" Charge ESR Equivalent Series Resistance (G-S) VDS = 50 V, VGS = 0 V, f = 1 MHz VDS = 50 V, VGS = 0 V VGS = 10 V, VDS = 50 V, ID = 96 A (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 50 V, ID = 96 A, VGS = 10 V, RG = 4.7 (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 40 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 160 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 96 A - - 1.3 V trr Reverse Recovery Time - 59 - ns Qrr Reverse Recovery Charge VDD = 50 V,VGS = 0 V, ISD = 96 A, dIF/dt = 100 A/s - 80 - nC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 3 mH, IAS = 13.4 A, RG = 25 , starting TJ = 25C. 3. ISD 40 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature typical characteristics. (c)2011 Fairchild Semiconductor Corporation FDPF085N10A Rev. C1 2 www.fairchildsemi.com FDPF085N10A -- N-Channel PowerTrench(R) MOSFET Package Marking and Ordering Information FDPF085N10A -- N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 300 VGS = 15.0V 10.0V 8.0V 6.5V 6.0V 5.5V 5.0V 100 100 ID, Drain Current[A] ID, Drain Current[A] 500 o 175 C o 25 C 10 o -55 C *Notes: 1. 250s Pulse Test 10 *Notes: 1. VDS = 10V 2. 250s Pulse Test o 2. TC = 25 C 5 0.1 1 VDS, Drain-Source Voltage[V] 1 5 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 18 2 3 4 5 6 VGS, Gate-Source Voltage[V] 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 500 o *Note: TC = 25 C IS, Reverse Drain Current [A] RDS(ON) [m], Drain-Source On-Resistance 16 VGS = 10V 12 8 VGS = 20V 4 0 100 200 300 ID, Drain Current [A] o 175 C 100 400 2. 250s Pulse Test 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] 1.5 10 VGS, Gate-Source Voltage [V] Ciss Capacitances [pF] *Notes: 1. VGS = 0V Figure 6. Gate Charge Characteristics 10000 1000 Coss *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 10 1 0.3 Figure 5. Capacitance Characteristics 100 o 25 C 1 10 VDS, Drain-Source Voltage [V] (c)2011 Fairchild Semiconductor Corporation FDPF085N10A Rev. C1 6 4 2 0 100 3 VDS = 20V VDS = 50V VDS = 80V 8 *Note: ID = 96A 0 7 14 21 28 Qg, Total Gate Charge [nC] 35 www.fairchildsemi.com Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.12 1.08 1.04 1.00 0.96 *Notes: 1. VGS = 0V 2. ID = 250A 0.92 -80 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 96A 0.5 -80 200 Figure 9. Maximum Safe Operating Area 100s 1ms 10 10ms Operation in This Area is Limited by R DS(on) 1 100ms DC *Notes: o 0.1 1. TC = 25 C 27 18 9 o o RJC = 4.5 C/W 2. TJ = 175 C 3. Single Pulse 0.01 0.1 1 10 VDS, Drain-Source Voltage [V] VGS= 10V 36 ID, Drain Current [A] ID, Drain Current [A] 200 45 100 0 25 100 200 Figure 11. Eoss vs. Drain to Source Voltage 50 75 100 125 150 o TC, Case Temperature [ C] 30 IAS, AVALANCHE CURRENT (A) 2.0 1.5 1.0 0.5 0 20 40 60 80 VDS, Drain to Source Voltage [V] (c)2011 Fairchild Semiconductor Corporation FDPF085N10A Rev. C1 175 Figure 12. Unclamped Inductive Switching Capability 2.5 EOSS, [J] 0 40 80 120 160 o TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature 500 0.0 -40 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD) If R = 0 tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1] 10 o STARTING TJ = 25 C o STARTING TJ = 150 C 1 0.01 100 4 0.1 1 10 100 300 tAV, TIME IN AVALANCHE (ms) www.fairchildsemi.com FDPF085N10A -- N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics (Continued) FDPF085N10A -- N-Channel PowerTrench(R) MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve ZJC (t), Thermal Response [o]C/W] Thermal Response [ZJC 6 0.5 1 0.2 PDM 0.1 t1 0.05 t2 *Notes: 0.02 0.1 o 1. ZJC(t) = 4.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) 0.01 Single pulse 0.01 -5 10 (c)2011 Fairchild Semiconductor Corporation FDPF085N10A Rev. C1 -4 10 -3 -2 -1 10 10 10 1 Pulse Duration [sec] tRectangular 1, Rectangular Pulse Duration [sec] 5 10 100 www.fairchildsemi.com FDPF085N10A -- N-Channel PowerTrench(R) MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms (c)2011 Fairchild Semiconductor Corporation FDPF085N10A Rev. C1 6 www.fairchildsemi.com FDPF085N10A -- N-Channel PowerTrench(R) MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2011 Fairchild Semiconductor Corporation FDPF085N10A Rev. C1 7 www.fairchildsemi.com FDPF085N10A -- N-Channel PowerTrench(R) MOSFET Mechanical Dimensions Figure 18. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF22S-003 (c)2011 Fairchild Semiconductor Corporation FDPF085N10A Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2011 Fairchild Semiconductor Corporation FDPF085N10A Rev. C1 9 www.fairchildsemi.com FDPF085N10A -- N-Channel PowerTrench(R) MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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