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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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March 2002
2002 Fairc hild Semiconductor Cor por ation FDS4935A Rev A(W)
FDS4935A
Dual 30V P-Channel PowerTrench
MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage rati ngs (4.5V – 20V).
Applications
• Power managem ent
• Load switch
• Battery protection
Features
• –7 A, –30 V RDS(ON) = 23 mΩ @ VGS = –10 V
RDS(ON) = 35 m Ω @ V GS = –4.5 V
• Low gate charge (15nC typical )
• Fast switching speed
• High performance trench t echnology for extremel y
low RDS(ON)
• High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
D2 D2 D1 D1
S2G2S1G1
Pin 1
SO-8
4
3
2
1
5
6
7
8
Q1
Q2
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source V ol tage –30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current – Continuous (Note 1a) –7 A
– Pulsed –30
PD Power Dissipation f or Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
PD
(Note 1c) 0.9
W
TJ, TSTG Operating and St orage Junction Temperature Range –55 to +175 °C
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJC Thermal Resistanc e, Juncti on-to-Case (Note 1) 40 °C/W
Package Marking and Ordering Information
Device Marki ng Device Reel Siz e Tape width Quantity
FDS4935A FDS4935A 13’’ 12mm 2500 units
FDS4935A
FDS4935A Rev A(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain–Sourc e Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V
∆BVDSS
∆TJ Breakdown Voltage Temperature
Coefficient ID = –250 µA, Referenced to 25°C –24
mV/°C
IDSS Zero Gate Volt age Drai n Current VDS = –24 V, VGS = 0 V –10 µA
IGSSF Gate–Body Leakage, Forward VGS = –20 V, VDS = 0 V –100 nA
IGSSR Gate–Body Leakage, Reverse VGS = 20 V, VDS = 0 V 100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold V ol t age VDS = V GS, ID = –250 µA –1 –1.6 –3 V
∆VGS(th)
∆TJ Gate Threshold Vol tage
Temperature Coefficient ID = –250 µA, Referenced to 25°C
4.4
mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = –10 V, ID = –7 A
VGS = –4.5 V, ID = –5.5 A
VGS= –10 V, ID = –7 A, TJ=125°C
19
28
26
23
35
34
mΩ
ID(on) On–State Drain Current VGS = –10 V , VDS = –5 V –30 A
gFS Forward Transconductance VDS = –5 V, ID = –7 A 19 S
Dynamic Characteristics
Ciss Input Capacitance 1233 pF
Coss Output Capacitance 311 pF
Crss Reverse Transfer Capacitance
VDS = –15 V, V GS = 0 V,
f = 1.0 MHz 152 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 13 23 ns
tr Turn–On Rise Time 10 20 ns
td(off) Turn–Off Delay Time 48 77 ns
tf Turn–Off Fall Time
VDD = –15 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
25 40 ns
Qg Total Gate Charge 15 21 nC
Qgs Gate–Source Charge 4.4 nC
Qgd Gate–Drain Charge
VDS = –15 V, ID = –7 A,
VGS = –5 V
4.5 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Cont i nuous Drain–Source Diode Forward Current –2.1 A
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = –2.1 A (Note 2) –0.75 –1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the sol der mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a 0.5in2
pad of 2 oz copper
b) 125°C/W when
mounted on a 0.02
in2 pad of 2 oz
copper
c) 135°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS4935
A
FDS4935A Rev A(W)
Typical Characteristics
0
10
20
30
40
50
012345
-VDS, DRAIN TO SOURCE VOL TAGE (V)
-I
D
, DRAIN CURRENT (A
)
VGS = -10V
-4.0V
-3.0V
-3.5V
-4.5V
-6.0V -5.0V
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 1020304050
-ID, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANC
E
VGS = -3.5V
-10V
-5.0V
-4.0V
-4.5V
-6.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNC TION TEMPERATURE ( oC)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANC
E
ID = -7A
VGS = -10V
0
0.02
0.04
0.06
0.08
246810
-VGS, GATE TO SOUR CE VO LTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
ID = -3.5A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation with
Temperature. Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
12345
-VGS, GA TE TO SOUR CE V OL TAGE (V)
-I
D
, DRAIN CURRENT (A
)
TA = -55oC25oC
125oC
VDS = -5.0V
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A
)
VGS = 0V
TA = 125oC
25oC
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4935
A
FDS4935A Rev A(W)
Typical Characteristics
0
2
4
6
8
10
0 4 8 12162024
Qg, GATE CHARGE (nC)
-V
GS
, GATE-SOURCE VOLTAGE (V)
ID = -8.8A VDS = -5V -10V
-15V
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 5 10 15 20 25 30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
COSS
CRSS
f = 1 MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-VDS, DRAIN-SOURC E VOLTAGE (V)
-I
D
, DRAIN CURRENT (A
)
DC
10s 1s 100ms
100
µ
s
RDS(ON) LIMIT
VGS = -10V
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
10ms
1ms
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
RθJA(t) = r(t) + RθJA
RθJA = 135 °C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS4935
A
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
Rev. H7
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
SMART START™
SPM™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
www.onsemi.com
1
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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