BAV21WS-V-G-18 - Vishay Presicion Group

BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G

www.vishay.com Vishay Semiconductors

Rev. 1.0, 16-May-12 1Document Number: 83423

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Small Signal Switching Diodes, High Voltage

MECHANICAL DATA

Case: SOD-323

Weight: approx. 4 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

FEATURES

• Silicon epitaxial planar diodes

• For general purpose

• AEC-Q101 qualified

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

Note

(1) Valid provided that leads are kept at ambient temperature

Note

(1) Valid provided that leads are kept at ambient temperature

PARTS TABLE

PART TYPE

DIFFERENTIATION ORDERING CODE TYPE MARKING INTERNAL

CONSTRUCTION REMARKS

BAV19WS-V-G VR = 100 V BAV19WS-V-G-18 or BAV19WS-V-G-08 AS Single diode Tape and reel

BAV20WS-V-G VR = 150 V BAV20WS-V-G-18 or BAV20WS-V-G-08 AT Single diode Tape and reel

BAV21WS-V-G VR = 200 V BAV21WS-V-G-18 or BAV21WS-V-G-08 AU Single diode Tape and reel

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL SYMBOL VALUE UNIT

Continuous reverse voltage

BAV19WS-V-G VR100 V

BAV20WS-V-G VR150 V

BAV21WS-V-G VR200 V

Repetitive peak reverse voltage

BAV19WS-V-G VRRM 120 V

BAV20WS-V-G VRRM 200 V

BAV21WS-V-G VRRM 250 V

Forward continuous current (1) IF250 mA

Rectified current (average) half wave

recitification with resistive load (1) IF(AV) 200 mA

Repetitive peak forward current (1) f 50 Hz,  = 180 °C IFRM 625 mA

Surge forward current t < 1 s, TJ = 25 °C IFSM 1A

Power dissipation (1) Ptot 200 mW

THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Thermal resistance junction to ambient air (1) RthJA 650 K/W

Junction temperature (1) Tj150 °C

Storage temperature range (1) Tstg - 65 to + 175 °C

BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G

www.vishay.com Vishay Semiconductors

Rev. 1.0, 16-May-12 2Document Number: 83423

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Forward Current vs. Forward Voltage

Fig. 2 - Admissible Forward Current vs. Ambient Temperature

Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature

Fig. 4 - Dynamic Forward Resistance vs. Forward Current

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

Forward voltage IF = 100 mA VF1V

IF = 200 mA VF1.25 V

Leakage current

VR = 100 V BAV19WS-V-G IR100 nA

VR = 100 V, Tj = 100 °C BAV20WS-V-G IR15 μA

VR = 150 V BAV21WS-V-G IR100 nA

VR = 150 V, Tj = 100 °C BAV19WS-V-G IR15 μA

VR = 200 V BAV20WS-V-G IR100 nA

VR = 200 V, Tj = 100 °C BAV21WS-V-G IR15 μA

Dynamic Forward resistance IF = 10 mA rf5

Diode capacitance VR = 0 V, f = 1 MHz CD1.5 pF

Reverse recovery time IF = 30 mA, IR = 30 mA,

iR = 3 mA, RL = 100 trr 50 ns

18858

1000

100

0.1

0.01

I- Forward Current (mA)

0 0.4 0.6 0.8 10.2

- Forward Voltage (V)

Tj = 100 °C

25 °C

0.1

0.2

0.3

0 30 60 90 120 150

18859

amb

- Ambient Temperature (°C)

I , I - Admissible Forward Current (A)

ICurrent (rectif.) O

DC current IF

200

18864

amb

- Ambient Temperature (°C)

250

200

150

100

20 40 60 80 100 120 140 160 1800

P - Admissible Power Dissipation (W)

tot

r - Dynamic Forward Resistance

f(Ω)

100

1 10010

18861 IF- Forward Current (mA)

BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G

www.vishay.com Vishay Semiconductors

Rev. 1.0, 16-May-12 3Document Number: 83423

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 5 - Leakage Current vs. Junction Temperature Fig. 6 - Capacitance vs. Reverse Voltage

PACKAGE DIMENSIONS in millimeters (inches): SOD-323

0.1

18862-2

100

1000

0 40 80 120 160 200

IR(Tj)/IR (25 °C) - Leakage Current

Tj - Junction Temperature (°C)

Reverse Voltage

BAV19WS-V-G VR = 100 V

BAV20WS-V-G VR = 150 V

BAV21WS-V-G VR = 200 V

18863

1100.1

0.8

0.6

0.4

1.4

1.2

1.0

0.2

100

C - Diode Capacitance (pF)

VR- Reverse Voltage (V)

2.0

1.8

1.6

=25

°CTj

Foot print recommendation:

Rev. 5 - Date: 23.Sept.2009

17443

Document no.:S8-V-3910.02-001 (4)

0.6 (0.024)

0.6 (0.024)0.6 (0.024)

1.6 (0.063)

0.10 (0.004)

Cathode bar

0.20 (0.008)

0.40 (0.016)

2.50 (0.098)

1.1 (0.043)

1.5 (0.059)

2.85 (0.112)

1.60 (0.063)

1.95 (0.077)

0.15 (0.006)

0.1 (0.004) max.

1.15 (0.045)

0.8 (0.031)

Created - Date: 24.August.2004

0.40 (0.016)

0.25 (0.010)

0.2 (0.008)

0° to 8°

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www.vishay.com Vishay

Revision: 12-Mar-12 1Document Number: 91000

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