SI-FOTODETEKTOREN Package Type SILICON PHOTODETECTORS Radiant sensitive area deg. mm2 IP ( = 950 nm, Ee = 1 mW/cm2, VR = 5 V) A IR (VR = 10 V) 10% tr,tf (VR = 20 V, RL = 50 ) nA nm ns 2.2 SMT-Dioden 2.2 SMT-Diodes 2.2.1 SMT PIN Fotodioden 2.2.1 SMT-PIN Photodiodes 2.2 x 2.2 BP 104 S 55 ( 40) Ordering code Fig. Q62702-P1605 13 Q62702-P1602 14 Q62702-P1790 15 60 BPW 34 S 80 ( 50) BPW 34 S E9087 60 BPW 34 BS 7.45 400 ... 1100 10 EV = 1000 lx 2 ( 30) 2.65 x 2.65 14.8 (>10.8) Ee = 1 mW/cm2, VR = 5 V) A 2 ( 30) 30% (400 nm) RL = 50 25 ns Q62702-P1601 14 1 ( 5) 400 ... 1100 5 Q62702-P1794 16 400 ... 1100 5 Q62702-P5034 7 400 ... 1100 5 Q62702-P5029 8 10 (> 5.5) SFH 2500 15 1 x 1 70 (> 50) SFH 2505 15 1 x 1 70 (> 50) 1 ( 5) 1 ( 5) VR = 20 V 60 1 x 1 = 870 nm SFH 2400 EV = 1000 Lx Reverse Gullwing 23