S
I
-F
OTODETEKTOREN
S
ILICON
P
HOTODETECTORS
23
Package
Type
ϕ
deg.
Radiant
sensitive
area
mm
2
I
P
(
λ
= 950 nm,
E
e
= 1 mW/cm
2
,
V
R
= 5
V)
µ
A
I
R
(
V
R
= 10
V)
nA
λ
10%
nm
t
r
,
t
f
(
V
R
= 20
V,
R
L
= 50
Ω)
ns
Ordering code
Fig.
2.2
SMT-Dioden
2.2
SMT-Diodes
2.2.1
SMT PIN Fotodioden
2.2.1
SMT-PIN Photodiodes
BP 104 S
±
60
2.2
×
2.2
55 (
≥
40)
E
V
= 1000 lx
2 (
≤
30)
400
…
1100
10
Q62702-P1605
13
BPW 34 S
2.65
×
2.65
80 (
≥
50)
Q62702-P1602
14
BPW 34 S E9087
±
60
Q62702-P1790
15
Reverse Gullwing
BPW 34 BS
7.45
14.8 (>10.8)
E
e
= 1 mW/cm
2
,
V
R
= 5
V)
µ
A
2 (
≤
30)
30%
(400 nm)
25 ns
R
L
= 50
Ω
Q62702-P1601
14
SFH 2400
±
60
1
×
1
10 (> 5.5)
E
V
= 1000 Lx
1 (
≤
5)
V
R
=2
0
V
400 … 1100
5
Q62702-P1794
16
SFH 2500
±
15
1
×
17
0
(
>
5
0
)
λ
= 870 nm
1 (
≤
5)
400 … 1100
5
Q62702-P5034
7
SFH 2505
±
15
1
×
1
70 (> 50)
1 (
≤
5)
400 … 1100
5
Q62702-P5029
8
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