© Semiconductor Components Industries, LLC, 2014
October, 2018 − Rev. 1
1Publication Order Number:
NRVTSA4100E/D
NRVTSA4100E
Trench-Based Schottky
Rectifier, Low Leakage
Features
•Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
•Fast Switching with Exceptional Temperature Stability
•Low Power Loss and Lower Operating Temperature
•Higher Efficiency for Achieving Regulatory Compliance
•High Surge Capability
•NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These are Pb−Free and Halide−Free Devices
Typical Applications
•Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
•High Frequency and DC−DC Converters
•Freewheeling and OR−ing diodes
•Reverse Battery Protection
•Instrumentation
•LED Lighting
Mechanical Characteristics:
•Case: Epoxy, Molded
•Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
•Lead Finish: 100% Matte Sn (Tin)
•Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
•Device Meets MSL 1 Requirements
Device Package Shipping†
ORDERING INFORMATION
NRVTSA4100ET3G SMA
(Pb−Free)
5000 /
Tape & Reel
SCHOTTKY BARRIER
RECTIFIERS
4 AMPERES
100 VOLTS
www.onsemi.com
SMA
CASE 403D
STYLE 1
MARKING
DIAGRAMS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
TE41
AYWWG
TE41 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
NRVTSA4100E
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2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR100
V
Average Rectified Forward Current
(TL = 142°C)
IF(AV) 4.0 A
Peak Repetitive Forward Current,
(Square Wave, 20 kHz, TL = 135°C)
IFRM 8.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM 150 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature TJ−55 to +175 °C
ESD Rating (Human Body Model) 1B
ESD Rating (Machine Model) M3
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Thermal Resistance, Junction−to−Lead, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
RθJL −16.2 °C/W
Thermal Resistance, Junction−to−Ambient, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
RθJA −90 °C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 1.0 Amps, TJ = 25°C)
(iF = 4.0 Amps, TJ = 25°C)
(iF = 1.0 Amps, TJ = 125°C)
(iF = 4.0 Amps, TJ = 125°C)
vF
0.45
0.61
0.36
0.53
−
0.68
−
0.59
V
Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
iR
3.5
2.0
29
5.0
mA
mA
Diode Capacitance
(Rated dc Voltage, TJ = 25°C, f = 1 MHz)
Cd
55
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.
NRVTSA4100E
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3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
VF
, INSTANTANEOUS FORWARD VOLTAGE (V) VF
, INSTANTANEOUS FORWARD VOLTAGE (V)
1.00.80.60.40.20
0.1
1
10
100
0.80.60.50.30.20.10
0.1
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)
9070605040302010 100807050302010
Figure 5. Typical Junction Capacitance
VR, REVERSE VOLTAGE (V)
0.1
10
100
1000
iF
, INSTANTANEOUS FORWARD
CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)
iF
, INSTANTANEOUS FORWARD
CURRENT (A)
80 100
1.E−06
1.E−05
1.E−04
1.E−03
1.E−01
40 60
1.E−07
1.E−04
1.E−03
1.E−02
IR, INSTANTANEOUS REVERSE CURRENT (A)
10 100
TA = 125°C
TA = −55°C
TA = 25°C
TA = 125°C
TA = 150°C
TA = −55°C
TA = 25°C
TA = 125°C
TA = 25°C
Figure 6. Current Derating
TC, LEAD TEMPERATURE (°C)
8060 160120200
0
1
2
4
IF(AV), AVERAGE FORWARD CURRENT (A)
6
40 100
Square Wave
DC
RqJL = 16.2°C/W
TJ = 25°C
0.4 0.7
90
TA = 150°C
TA = 150°C
TA = 85°C
1
0.9 1.0
TA = 125°C
TA = 25°C
TA = 150°C
TA = 85°C
1.E−05
3
5
TA = 175°C
TA = 175°C
1.1
TA = 175°C
1.E−07
1.E−02
TA = 175°C
1.E−01
1.E−06
140
7
8
NRVTSA4100E
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4
TYPICAL CHARACTERISTICS
Figure 7. Forward Power Dissipation
IF(AV), AVERAGE FORWARD CURRENT (A)
0
0
1
6
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
2.0 4.0
IPK/IAV = 5
0.5 1.0 1.5 2.5 3.0 3.5
2
3
4
5
Square Wave
IPK/IAV = 10
DC
IPK/IAV
= 20
7
8
0.001
0.01
0.1
1
10
1000
0.000001 0.00001 0.0001 10000.001 0.01 0.1 1 10 100
Figure 8. Typical Transient Thermal Response, Junction−to−Ambient
t, PULSE TIME (S)
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
50% Duty Cycle
20%
10%
5%
2%
1%
100
Single Pulse
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.97 2.10 2.20 0.078
INCHES
A1 0.05 0.10 0.20 0.002
b1.27 1.45 1.63 0.050
c0.15 0.28 0.41 0.006
D2.29 2.60 2.92 0.090
E4.06 4.32 4.57 0.160
L0.76 1.14 1.52 0.030
0.083 0.087
0.004 0.008
0.057 0.064
0.011 0.016
0.103 0.115
0.170 0.180
0.045 0.060
NOM MAX
4.83 5.21 5.59 0.190 0.205 0.220
HE
SCALE 1:1
SMA
CASE 403D
ISSUE H
DATE 23 SEP 2015
xxxx = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
STYLE 2:
NO POLARITY
STYLE 1 STYLE 2
STYLE 1 STYLE 2
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
E
bD
Lc
A
A1 xxxx
AYWWG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
xxxx
AYWWG
GENERIC
MARKING DIAGRAM*
4.000
0.157
2.000
0.079
2.000
0.079
ǒmm
inchesǓ
SCALE 8:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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DOCUMENT NUMBER:
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