© 2002 IXYS All rights reserved
1 - 4
Symbol Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 20 kW600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C 32 A
IC90 TC= 90°C 20 A
ICM TC= 90°C, tp =1 ms 40 A
RBSOA VGE= ±15 V, TJ = 125°C, RG = 22 W ICM = 60 A
Clamped inductive load, L = 30 µH VCEK < VCES
tSC VGE= ±15 V, VCE = 600 V, TJ = 125°C 10 µs
(SCSOA) RG = 22 W, non repetitive
PCTC= 25°C IGBT 140 W
Diode 50 W
TJ-55 ... +150 °C
Tstg
-40 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
MdMounting torque 0.4 - 0.6 Nm
Weight 2g
VCES = 600 V
IC25 = 32 A
VCE(sat) typ = 2.2 V
Features
●NPT IGBT technology
●low switching losses
●low tail current
●no latch up
●short circuit capability
●positive temperature coefficient for
easy paralleling
●MOS input, voltage controlled
●optional ultra fast diode
●International standard package
Advantages
●Space savings
●High power density
Typical Applications
●AC motor speed control
●DC servo and robot drives
●DC choppers
●Uninteruptible power supplies (UPS)
●Switch-mode and resonant-mode
power supplies
High Voltage IGBT
with optional Diode
High Speed,
Low Saturation Voltage
IXDP 20N60 B
IXDP 20N60 BD1
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V(BR)CES VGE = 0 V 600 V
VGE(th) IC= 0.4 mA, VCE = VGE 35V
ICES VCE = VCES TJ = 25°C 0.1 mA
TJ = 125°C 0.7 mA
IGES VCE = 0 V, VGE = ± 20 V ± 500 nA
VCE(sat) IC= 20 A, VGE = 15 V 2.2 2.8 V
G = Gate, E = Emitter
C = Collector , TAB = Collector
TO-220 AB
C (TAB)
G
C
E
232
IXDP 20N60B IXDP 20N60B D1
G
C
E
G
C
E
© 2002 IXYS All rights reserved
2 - 4
IXDP 20N60 B
IXDP 20N60 BD1
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Cies 800 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 85 pF
Cres 50 pF
QgIC = 20 A, VGE = 15 V, VCE = 480 V 70 nC
td(on) 25 ns
tr30 ns
td(off) 260 ns
tf55 ns
Eon 0.9 mJ
Eoff 0.4 mJ
RthJC 0.9 K/W
RthCH Package with heatsink compound 0.5 K/W
Inductive load, TJ = 125°C
IC = 20 A, VGE = ±15 V,
VCE = 300 V, RG = 22 W
Reverse Diode (FRED) [D1 version only] Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Conditions min. typ. max.
VFIF = 20 A, VGE = 0 V 2.1 2.4 V
IF = 20 A, VGE = 0 V, TJ = 125°C 1.6 V
IFTC = 25°C 25 A
TC = 90°C 15 A
IRM IF = 10 A, -diF/dt = 400 A/µs, VR = 300 V 11 A
trr VGE = 0 V, TJ = 125°C 80 ns
trr IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 40 ns
RthJC 2.5 K/W
TO-220 AB Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
© 2002 IXYS All rights reserved
3 - 4
IXDP 20N60 B
IXDP 20N60 BD1
012345
0
10
20
30
40
0 200 400 600 800 1000
0
5
10
15
20
25
30
0
40
80
120
0123
0
10
20
30
40
0 20406080100
0
3
6
9
12
15
012345
0
10
20
30
40
TJ = 25°CTJ = 125°C
VCE = 480V
IC = 15A
345678910
0
10
20
30
40
VCE = 20V
VCE
V
A
IC
VCE
A
IC
V
V
V
VGE VF
A
IC
IF
nC
QG-di/dt
V
VGE IRM trr
ns
A/
m
s
IXDP20N06B
TJ = 125°C
VR = 300V
IF = 10A
TJ = 25°C
TJ = 125°C
IRM
trr
TJ = 25°C
TJ = 125°C
9V
11V
VGE= 17V
15V
13V
A
A
9V
11V
VGE= 17V
15V
13V
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
free wheeling diode
© 2002 IXYS All rights reserved
4 - 4
IXDP 20N60 B
IXDP 20N60 BD1
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
0 102030
0.0
0.5
1.0
1.5
0
25
50
75
0102030
0.0
0.2
0.4
0.6
0.8
0
100
200
300
400
10-5 10-4 10-3 10-2 10-1 100101
0.001
0.01
0.1
1
0 10203040506070
0.00
0.25
0.50
0.75
1.00
0
200
400
600
800
0 10203040506070
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
single pulse
VCE = 300V
VGE = ±15V
RG = 22
W
TJ = 12 5°C
IXDP20N06B
VCE = 300V
VGE = ±15V
IC = 20A
TJ = 125°C
0 100 200 300 400 500 600 700
0
20
40
60
80 RG = 22
W
TJ = 125°C
VCE = 300V
VGE = ±15V
RG = 22
W
TJ = 125°C
Eon
VCE = 300V
VGE = ±15V
IC = 20A
TJ = 12 5°C
td(on)
tr
td(off)
tf
Eon
td(on)
trEoff
td(off)
tf
IC
AIC
A
Eoff
Eon tt
RG
W
RG
W
VCE ts
mJ
Eon
mJ
Eoff
ns
t
ns
t
ICM
K/W
ZthJC IGBT
diode
V
A
mJ ns ns
mJ
Eoff
5
