2N7002BK,215 - NXP Semiconductors

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small

SOT23 (TO-236AB) Surface-M ounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features and benefits

Logic-level compatible

Very fast switching

Trench MOSFET technology

ESD protection up to 2 kV

AEC-Q101 qualified

1.3 Applications

Relay driver

High-speed line driver

Low-side loadswitch

Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

2N7002BK

60 V, 350 mA N-channel Trench MOSFET

Rev. 1 — 17 June 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tamb =25°C--60V

VGS gate-source voltage Tamb =25°C--±20 V

IDdrain current Tamb =25°C;

VGS =10V [1] --350mA

RDSon drain - so urce on-st a te

resistance Tj=25°C;

VGS =10V;

ID= 500 mA

-11.6Ω

Product data sheet Rev. 1 — 17 June 2010 2 of 16

NXP Semiconductors 2N7002BK

60 V, 350 mA N-channel Trench MOSFET

2. Pinning information

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5. Limiting values

Table 2. Pinning

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

2S source

3 D drain

017aaa00

Table 3. Ordering information

Type number Package

Name Description Version

2N7002BK TO-236AB plastic surface-mounted package; 3 leads SOT23

Table 4. Marking codes

Type number Marking code[1]

2N7002BK LN*

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tamb =25°C-60V

VGS gate-source voltage Tamb =25°C-±20 V

IDdrain current VGS =10V [1]

Tamb =25°C-350mA

Tamb =100°C-245mA

IDM peak drain current Tamb =25°C;

single pulse; tp≤10 μs-1.2A

Product data sheet Rev. 1 — 17 June 2010 3 of 16

NXP Semiconductors 2N7002BK

60 V, 350 mA N-channel Trench MOSFET

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[3] Measured between all pins.

Ptot total power dissipation Tamb =25°C[2] -370mW

[1] -440mW

Tsp =25°C-1.2W

Tjjunction temperature 150 °C

Tamb ambient temperature −55 +150 °C

Tstg storage temperature −65 +150 °C

Source-drain diode

ISsource current Tamb =25°C[1] -350mA

ESD maximum rating

VESD electrostatic discharge

voltage human body model [3] - 2000 V

Table 5. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Fig 1. Normalized total power dissipation as a

function of ambient temperature Fig 2. Normalized continuous drain current as a

function of ambient temperature

Tamb (°C)

−75 17512525 75−25

017aaa001

120

Pder

(%)

Tamb (°C)

−75 17512525 75−25

017aaa002

120

Ider

(%)

Pder Ptot

Ptot 25°C()

------------------------100 %×=Ider ID

ID25°C()

--------------------100 %×=

Product data sheet Rev. 1 — 17 June 2010 4 of 16

NXP Semiconductors 2N7002BK

60 V, 350 mA N-channel Trench MOSFET

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

IDM = single pulse

(1) tp= 100 μs

(2) tp=1ms

(3) tp=10ms

(4) tp= 100 ms

(5) DC; Tsp =25°C

(6) DC; Tamb =25°C; drain mounting pad 1 cm2

Fig 3. Safe operating area ; junc tion to ambient; continuous and peak drain currents as a function of

drain-source voltage

017aaa036

10−1

10−2

(A)

10−3

VDS (V)

10−1102

101

(1)

(2)

(3)

(4)

(5)

(6)

Limit RDSon = VDS/ID

Table 6. Thermal character istics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1] - 295 340 K/W

[2] - 250 285 K/W

Rth(j-sp) thermal resistance from

junction to solder point - - 105 K/W

Product data sheet Rev. 1 — 17 June 2010 5 of 16

NXP Semiconductors 2N7002BK

60 V, 350 mA N-channel Trench MOSFET

FR4 PCB, standard footprint

Fig 4. Transient thermal impedance from ju nc tio n to ambient as a function of p ulse du ration; typical values

FR4 PCB, mounting pad for drain 1 cm2

Fig 5. Transient thermal impedance from ju nc tio n to ambient as a function of p ulse du ration; typical values

017aaa037

tp (s)

10−3102103

10110−210−1

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75

0.5

0.33

0.25 0.2

0.1 0.05

0.02

0.01

017aaa038

tp (s)

10−3102103

10110−210−1

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75

0.5 0.33

0.25 0.2

0.1 0.05

0.02

0.01

Product data sheet Rev. 1 — 17 June 2010 6 of 16

NXP Semiconductors 2N7002BK

60 V, 350 mA N-channel Trench MOSFET

7. Characteristics

[1] Pulse test: tp≤300 μs; δ≤0.01.

Table 7. Characteristics

Tj=25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Static chara cteristics

V(BR)DSS drain-source breakdown

voltage ID=10μA; VGS =0V 60--V

VGS(th) gate-source threshold

voltage ID=250μA; VDS =V

GS 1.1 1.6 2.1 V

IDSS drain leakage current VDS =60V; V

GS =0V

Tj=25°C --1μA

Tj= 150 °C --10μA

IGSS gate leakage current VGS =±20 V; VDS =0V--10μA

RDSon drain-source on-state

resistance [1]

VGS =5V; I

D=50mA - 1.3 2 Ω

VGS =10V; I

D=500mA - 1 1.6 Ω

gfs forward

transconductance VDS =10V; I

D= 200 mA [1] - 550 - mS

Dynamic characteristics

QG(tot) total gate charge ID=300mA;

VDS =30V;

VGS =4.5V

-0.50.6nC

QGS gate-source charge - 0.2 - nC

QGD gate-drain charge - 0.1 - nC

Ciss input capacitance VGS =0V; V

DS =10V;

f=1MHz - 3350pF

Coss output capacitance - 7 - pF

Crss reverse transfer

capacitance -4-pF

td(on) turn-on delay time VDD =50V;

RL=250Ω;

VGS =10V;

RG=6Ω

- 5 10 ns

trrise time -6-ns

td(off) turn-off delay time - 12 24 ns

tffall time - 7 - ns

Source-drain diode

VSD source-drain voltage I S=115mA; V

GS = 0 V 0.47 0.75 1.1 V

Product data sheet Rev. 1 — 17 June 2010 7 of 16

NXP Semiconductors 2N7002BK

60 V, 350 mA N-channel Trench MOSFET

Tamb =25°CT

amb =25°C; VDS =5V

(1) minimum values

(2) typical values

(3) maximum values

Fig 6. Output cha racteristics: drain current as a

function of drain-source voltage; typical

values

Fig 7. Sub-threshold drain current as a function of

gate-source voltage

Tamb =25°C

(1) VGS =3.25V

(2) VGS =3.5V

(3) VGS =4V

(4) VGS =5V

(5) VGS =10V

ID=500mA

(1) Tamb = 150 °C

(2) Tamb =25°C

Fig 8. Drain-source on-state resistance as a function

of drain current; typical values Fig 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

VDS (V)

0.0 4.03.01.0 2.0

017aaa039

0.4

0.5

0.3

0.2

0.1

0.6

0.7

(A)

0.0

3.5 V

VGS = 4.0 V

3.0 V

2.75 V

2.5 V

3.25 V

017aaa040

VGS (V)

0.0 3.02.01.0

10−4

10−5

10−3

(A)

10−6

(2)(1) (3)

ID (A)

0.0 1.00.80.4 0.60.2

017aaa041

2.0

4.0

6.0

RDSon

(Ω)

0.0

(1)

(2)

(3)

(4)

(5)

VGS (V)

0.0 10.08.04.0 6.02.0

017aaa042

2.0

4.0

6.0

RDSon

(Ω)

0.0

(1)

(2)

Product data sheet Rev. 1 — 17 June 2010 8 of 16

NXP Semiconductors 2N7002BK

60 V, 350 mA N-channel Trench MOSFET

VDS >I

D×RDSon

(1) Tamb =25°C

(2) Tamb = 150 °C

Fig 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values Fig 11. Normalized drain-so urc e on -state resistance

as a function of ambient temperature; typical

values

ID= 0.25 mA; VDS =V

(1) maximum values

(2) typical values

(3) minimum values

f=1MHz; V

GS =0V

(1) Ciss

(2) Coss

(3) Crss

Fig 12. Gate-source threshold voltage as a function of

ambient temperature Fig 13. Input, output and reverse transfer

capacitances as a function of drain-source

voltage; typical values

VGS (V)

0.0 5.04.02.0 3.01.0

017aaa043

0.4

0.6

0.2

0.8

1.0

(A)

0.0

(1) (2)

Tamb (°C)

−60 180120060

017aaa044

1.2

0.6

1.8

2.4

0.0

aRDSon

RDSon 25°C()

-----------------------------

Tamb (°C)

−60 180120060

017aaa045

1.0

2.0

3.0

VGS(th)

(V)

0.0

(2)

(1)

(3)

017aaa046

VDS (V)

10−1102

101

102

(pF)

(2)

(1)

(3)

Product data sheet Rev. 1 — 17 June 2010 9 of 16

NXP Semiconductors 2N7002BK

60 V, 350 mA N-channel Trench MOSFET

ID= 300 mA; VDD =6V; T

amb =25°C

Fig 14. Gate-source voltage as a function of gate

charge; typical va lues Fig 15. Gate charge waveform definitions

VGS =0V

(1) Tamb = 150 °C

(2) Tamb =25°C

Fig 16. Source current as a function of source-drain voltage; typical values

QG (nC)

0.0 0.80.60.2 0.4

017aaa047

2.0

3.0

1.0

4.0

5.0

VGS

(V)

0.0

003aaa50

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

VSD (V)

0.0 1.20.80.4

017aaa048

0.4

0.8

1.2

(A)

0.0

(1) (2)

Product data sheet Rev. 1 — 17 June 2010 10 of 16

NXP Semiconductors 2N7002BK

60 V, 350 mA N-channel Trench MOSFET

8. Test information

Fig 17. Duty cycle definition

006aaa812

duty cycle δ =

Product data sheet Rev. 1 — 17 June 2010 11 of 16

NXP Semiconductors 2N7002BK

60 V, 350 mA N-channel Trench MOSFET

9. Package outline

Fig 18. Package outline SOT23 (TO-236AB)

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2 0.95

1.9 2.5

2.1

0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

Product data sheet Rev. 1 — 17 June 2010 12 of 16

NXP Semiconductors 2N7002BK

60 V, 350 mA N-channel Trench MOSFET

10. Soldering

Fig 19. Reflow solderin g foo tprin t SOT23 (TO-236AB)

Fig 20. W ave soldering footprint SOT23 (TO-236AB)

solder lands

solder resist

occupied area

solder paste

sot023_

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

Product data sheet Rev. 1 — 17 June 2010 13 of 16

NXP Semiconductors 2N7002BK

60 V, 350 mA N-channel Trench MOSFET

11. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

2N7002BK v.1 20100617 Product data sheet - -

Product data sheet Rev. 1 — 17 June 2010 14 of 16

NXP Semiconductors 2N7002BK

60 V, 350 mA N-channel Trench MOSFET

12. Legal information

12.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full informatio n see the relevant full dat a

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

Product specificat io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyon d those described in the

Product data sheet.

12.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental ,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suit able for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors pro duct can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Custo mers should provide appropriate

design and operating safeguards to minimize the risks associated with t heir

applications and products.

NXP Semiconductors does not accept any liabili ty related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party custo m er(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development .

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 17 June 2010 15 of 16

NXP Semiconductors 2N7002BK

60 V, 350 mA N-channel Trench MOSFET

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

12.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

13. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors 2N7002BK

60 V, 350 mA N-channel Trench MOSFET

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 17 June 2010

Document identifier: 2N7002BK

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

14. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 10

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13 Contact information. . . . . . . . . . . . . . . . . . . . . 15

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16